Titanium related luminescence in SiC

We report on the luminescence spectra related to Ti impurity in 6H-SiC. The spectra depend strongly on the polarization. There are three families of PL lines. Phonon structure is observed containing both broad and sharp replicas. When the temperature increases extra lines appear at high energy. Time-resolved PL reveals a 0.1 ms long lifetime at 2 K.     

Special features in photoemission from the s-p bands of copper

Angle-resolved photoemission (ARPES) studies of the (100) face of clean copper using He I radiation reveal two distinct peaks with binding energies between 0 and 2 eV. These peaks have the opposite dispersion with emission angle and have very different widths, one peak in particular being unusually sharp. We show that both of these peaks are associated with the upper part of the s-p band and that their behaviour can be qualitatively explained by an examination of the bulk band structure for finite values of k_∥ away from the Δ-symmetry direction. We also show that rather good quantitative agreement with the experimental spectra can be obtained by performing realistic photocurrent calculations which include a proper treatment of the surface electronic structure, matrix elements and lifetime effects. Finally, the significance of a sharp peak arising from the s-p band for ARPES studies of random alloys and chemisorption systems is briefly discussed.     

Decay distribution of spontaneous emission from atoms in one-dimensional photonic crystal

Spontaneous emission behavior from atoms (or molecules) in one-dimensional photonic crystal with a defect is investigated. Taken all the TE and TM modes into account, the normalized spontaneous emission rate of the atom is calculated as a function of the position of the atom in the crystal. Results for both nonabsorbing dielectric structure and absorbing dielectric structure are presented. With the increase of the thickness of the defect in which the atoms are embedded, the oscillations of the spontaneous emission rate versus the position of the atom become dense and the lifetime distribution becomes narrow and sharp. The PC effect may lead to the coexistence of both accelerated and inhibited decay processes.     

Picosecond carrier lifetime and large optical nonlinearities in InGaAsP grown by He-plasma-assisted molecular beam epitaxy

We report the measurement of a fast carrier lifetime and large band-gap-resonant optical nonlinearities in an InGaAsP sample grown by He-plasma-assisted molecular beam epitaxy. Using a 2-microm-thick sample grown on an InP substrate, we observed a carrier lifetime of 15 ps and an index change as large as 0.077 induced by an intense 1-ps pulse at a wavelength of 1.57 microm. Good crystalline structure is maintained in the material during growth, and the absorption spectrum shows a sharp band edge. These properties indicate that materials produced by He-plasma-assisted growth have potential applications in compact ultrafast photonic devices.     

Influence of impurities on the surface structures and fault generation in homoepitaxial Si (111) films

In situ LEED studies of the homoepitaxial growth of Si(111) films by uhv sublimation, indicate a strong correlation between the type of surface structure generated and the metallic impurity content of the silicon substrates as estimated from minority carrier lifetimes. The development of the familiar Si (111)−7 × 7 structure is favored by the presence of lifetime-killing impurities in the substrate. Experiments where Fe is introduced on high lifetime substrates prior to annealing and film growth, suggest that this impurity species plays a role in the generation of the 7 × 7 surface structure. Electron microscopy reveals that homoepitaxial Si(111) layers are generally faulted, the number density of which increases progressively as the growth temperature is lowered and the deposition rate increased. Films deposited on high lifetime silicon contain substantially fewer stacking faults than those grown on low lifetime substrates. These results suggest that the faults originate at the substrate surface at microprecipitates consisting of fast diffusing, low solubility impurity species.     

Structure-dependent vibrational lifetimes of hydrogen in silicon

The lifetimes of the Si-H vibrational stretch modes of the H(*)(2) ( 2062 cm(-1)) and HV.VH((110)) ( 2072.5 cm(-1)) defects in crystalline Si are measured directly by transient bleaching spectroscopy from 10 K to room temperature. The interstitial-type defect H(*)(2) has a lifetime of 4.2 ps at 10 K, whereas the lifetime of the vacancy-type complex HV.VH((110)) is 2 orders of magnitude longer, 295 ps. The temperature dependence of the lifetime of H(*)(2) is governed by TA phonons, while HV.VH((110)) is governed by LA phonons. This behavior is attributed to the distinctly different local structure of these defects and the accompanying local vibrational modes.     

完美晶体中正电子体寿命计算的几种方法的分析与比较

以正电子寿命为探测对象的正电子湮没寿命谱技术在研究半导体等材料的微缺陷方面得到了广泛的应用,它对晶体的结构类型、缺陷种类以及温度等十分敏感,因此,理论上正电子寿命的快速精确计算与实验数据的结合分析显得尤为重要. 采用中性原子叠加模型、赝势方法和全势方法处理正电子局域势能,有限差分方法自洽求解正电子波函数,局域密度近似和广义梯度近似处理正电子电子关联势和增强因子,以体心立方结构的α-Fe、面心立方结构的Al和复式面心立方结构的Si三种单晶固体为例,分别计算了它们的正电子体寿命,计算值与相应的实验结果和其他计算结果均符合较好. 同时细致分析了这几种方法在电子密度网格点精度、正电子电子关联势和增强因子等方面对正电子体寿命计算的影响,探讨了这几种方法在计算正电子体寿命方面各自的优缺点. 关键词： 正电子体寿命 完美晶体 正电子电子关联势 增强因子     

f-State occupancy at the gamma-alpha phase transition of Ce-Th and Ce-Sc alloys

Resonant inelastic x-ray scattering spectra were measured for a series of Ce solid solutions (Ce-Th and Ce-Sc) across the gamma-alpha phase transition. They reveal a well-defined feature associated with the 4f2 configuration when the incident energy is tuned to the Ce L3 preedge region. This component is normally hidden in x-ray absorption spectra because of lifetime broadening. The f1/f2 ratio estimated by resonant inelastic x-ray scattering presents a sharp drop across the gamma-alpha transition and hysteresis as a function of temperature that closely resemble the magnetization loop. These measurements confirm recent dynamical mean-field theory calculations that unexpectedly predict significant double occupancy of f orbitals in the ground state.     

Temperature dependence of electron transport in GaN/AlGaN quantum cascade detectors

In this work we investigate the influence of extractor design and temperature on transport properties of quantum cascade detector. For this purpose we realize numerical calculation of electron lifetimes considering electron–phonon and electron impurities scattering. Electron–phonon interactions are treated using Fermi Golden Rule which allows to calculate lifetime of carriers with temperature and structure design taking into account. Transport characteristics of the quantum cascade detectors have been computed using density matrix theory. As a result, we have obtained the system of ordinary differential equations describing dynamics of electron distribution functions and intersubband correlations. Managing carrier lifetime in quantum wells gives us possibility to make device response faster. Also carrier lifetime is the relevant characteristic, allows us to calculate a lot of parameters such as quantum efficiency and photocurrent.     

Surface supercooling and stability of n-alkane films

The surface tension of n-octadecane was studied in the vicinity of the bulk melting point using both the maximum bubble pressure and Wilhelmy plate methods. The bubble surfaces were found to be supercooled below the surface freezing point. The onset of surface freezing is indicated by a sharp drop in surface tension at a constant temperature. This transition is accompanied by an increased film stability resulting in longer bubble lifetimes at the liquid surface. Variations in bubble lifetime reflect changes in the interfacial mechanical properties of the film from liquidlike to solidlike.     

Polarization of conduction electrons and hyperfine field on impurities in ferromagnetic metals

The temperature dependence of the polarization of conduction electrons and that of the magnetization are shown not to coincide in the presence of a sharp structure in the density of states in ferromagnetic metals. This effect can explain the experimentally observed temperature anomalies of the hyperfine field on impurities in ferromagnetic matrices.     

Evidence for spinodal singularities in high-dimensional nearest-neighbor ising models

Conventional theories of nucleation predict that the metastable state has an average lifetime which monotonically decreases as the system is quenched further from the condensation point. However, theories based on the coarsegrained Ginzburg-Landau free energy functional seem to indicate that for systems above six dimensions there is a sharp spinodal dividing the metastable and unstable regimes where the lifetime of the metastable state diverges. Monte Carlo simulations are used to investigate this discrepency. Both nucleation rates and bulk susceptibility measurements seem to support the prediction of the Ginzburg-Landau theories.     

Theory and ab initio calculation of radiative lifetime of excitons in semiconducting carbon nanotubes

We present a theoretical analysis and first-principles calculation of the radiative lifetime of excitons in semiconducting carbon nanotubes. An intrinsic lifetime of the order of 10 ps is computed for the lowest optically active bright excitons. The intrinsic lifetime is, however, a rapid increasing function of the exciton momentum. Moreover, the electronic structure of the nanotubes dictates the existence of dark excitons near in energy to each bright exciton. Both effects strongly influence measured lifetime. Assuming a thermal occupation of bright and dark exciton bands, we find an effective lifetime of the order of 10 ns at room temperature, in good accord with recent experiments.     

Generation of high-power nanosecond pulses in a relativistic backward-wave oscillator in the regime of spatial accumulation of energy

We study the generation of electromagnetic pulses with a carrier frequency of 3.7 GHz in a relativistic backward-wave oscillator with a long slow-wave system in the superradiance regime of super-radiation for a magnetic induction of 0.2 T (below the cyclotron resonance). To decrease transverse velocities of the electrons, we use decompression of a hollow electron beam. Decompression in combination with a sharp leading edge of the high-voltage pulse (460 kV) applied to the explosive-emission cathode are used for increasing the cathode lifetime and improving the azimuthal uniformity of the beam. As a result, the achieved peak power of the microwave radiation amounts to 800 MW for a pulse duration of 2.5 ns and a repetition rate of 100 Hz. The uninterrupted operation in such a regime determined by the lifetime of the explosive-emission cathode is increased up to 10⁵–10⁶ pulses. The efficiency of conversion of the electron-beam power into the electromagnetic-wave power is increased up to 50%, The possibility of locking the electromagnetic oscillations phase by a sharp edge of the high-voltage pulse at the cathode was observed for the first time in such a relativistic generator. __________ Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Radiofizika, Vol. 49, No. 10, pp. 837–842, October 2006.     

Cu60Zr30Ti10非晶合金弛豫和晶化过程的小角X射线散射研究

应用小角X射线散射技术研究了Cu₆₀Zr₃₀Ti₁₀非晶合金从300到813 K之间微结构的演化情况.发现在淬火状态下Cu₆₀Zr₃₀Ti₁₀非晶合金中存在直径30 nm左右的富Cu区.非晶的结构弛豫包括573 K之前的低温结构弛豫和573 K到玻璃转变温度的高温结构弛豫，弛豫的结果是产生含有有序原子团簇的富Cu区，这些有序原子团簇的富Cu区是随后晶化过程中晶核产生的基础.Porod曲线分析表明，晶化生成的纳米体心立方CuZr相和基体之间有明锐的界面. 关键词： 小角X射线散射 非晶合金 结构弛豫 晶化     

Stress influence on high temperature oxide scale growth: Modeling and investigation on a thermal barrier coating system

In thermal barrier coating (TBC) systems, an oxide layer develops at high temperature below the ceramic coating, leading in the long term to the mechanical failure of the structure upon cooling. The mechanism of stress-affected oxidation likely to induce the growth of a non-uniform oxide scale detrimental to the TBC lifetime was investigated. A continuum thermodynamics formulation is derived accounting for the influence of the stress and strain situation at the sharp metal/oxide phase boundary on the local oxidation kinetics. It specially includes the contributions of the large volumetric strain and the mass consumption associated with metal oxidation. A continuum mechanics/mass diffusion framework is used along with the developed formulation for the interface evolution to study the growth of an oxide layer coupled with local stress development. The implementation of the model has required the development of a specific simulation tool, based on a finite element method completed with an external routine for the phase boundary propagation. Results on an electron-beam physical vapor deposited (EB-PVD) TBC case are presented. The processes resulting in a non-uniform oxide scale growth are analyzed and the main influences are discussed.     

Observation of the crossover from two-gap to single-gap superconductivity through specific heat measurements in neutron-irradiated MgB2

We report specific heat measurements on neutron-irradiated MgB2 samples, for which the critical temperature is lowered to 8.7 K, but the superconducting transition remains extremely sharp, indicative of a defect structure extremely homogeneous. Our results evidence the presence of two superconducting gaps in the temperature range above 21 K, while single-gap superconductivity is well established as a bulk property, not associated with local disorder fluctuations, when Tc decreases to 11 K.     

单晶硅表面均匀小尺寸金字塔制备及其特性研究

表面织构是一种通过有效的光俘获增加短路电流从而提高太阳电池效率的主要途径之一.在加入间隙式超声和NaClO添加剂的碱性四甲基氢氧化铵(TMAH)溶液中对单晶硅表面进行织构化处理,研究超声与NaClO在织构过程中对金字塔成核和生长的影响,以及金字塔大小对高温工艺之后的单晶硅少子寿命的影响.研究表明,通过在织构溶液中加入间隙式超声控制气泡停留在硅片表面的时间和脱离硅片表面速度,增强了小尺寸金字塔的均匀分布.织构之后硅片在AM1.5G光谱下的加权平均反射率能够达到12.4%,在高温扩散和氧化之后少子寿命的大小与金字塔大小之间存在近似于指数衰减函数的关系. 关键词： 表面织构化 反射率 少子寿命 单晶硅太阳电池     

Spectroscopic evidence of the multiple- site structure of Eu(3+) ions incorporated in ZnO nanocrystals

Hexagonal Eu(3+):ZnO nanocrystals were synthesized by a modified solgel method. By means of the site-selective spectroscopy at 10 K, two kinds of luminescence sites of Eu(3+) are identified. One site exhibits a long lifetime of (5)D(0) and sharp emission and excitation peaks, which are ascribed to the inner lattice site with an ordered crystalline environment. The other site associated with the distorted lattice sites near the surface shows a relatively short lifetime of (5)D(0) and significantly broadened fluorescence lines. The energy transfer from the nanocrystal host to Eu(3+) confirms that Eu(3+) ions can, to some extent, be incorporated into the ZnO nanocrystal.     

Understanding the nature of the kinetic process in a VO2 metal-insulator transition

Understanding the kinetics during the metal-insulator transition process is crucial to sort out the underlying physical nature of electron-lattice interactions in correlated materials. Here, based on the temperature-dependent in situ x-ray absorption fine structure measurement and density-functional theory calculations, we have revealed that the monoclinic-to-tetragonal phase transition of VO2 near the critical temperature is characterized by a sharp decrease of the twisting angle δ of the nearest V-V coordination. The VO2 metallization occurs in the intermediate monoclinic like structure with a large twist of V-V pairs when the δ angle is smaller than 1.4°. The correlation between structural kinetics and electronic structure points out that the structural rearrangement is a key factor to narrow the insulating band gap.