Scaling and performance of CO2 lasers at supra-atmospheric pressure

The performance of a compact uv photo-preionized TE laser is studied in the pressure range 1–5 bar. As the pressure is increased, the laser pulse shape is little altered, but both the peak power and the total output pulse energy increase significantly with pressure, even for constant input electrical energy. For various gas mixtures and excitation source capacitors the measurements suggest approximate output energy scaling with the product of the source charge per unit electrode area [C.m^–2] and the molecular partial pressure [CO₂+N₂+CO]. This is explained in terms of the pressure-dependent discharge impedance. An input-energy-related discharge instability limits the optimum laser pressure to 1.5–2.5 bar, and we show that, at constant input energy, the instability boundary depends on the molecular partial pressure alone. The pre-ionization photo-electron yield varies negligibly with pressure, but the discharge tolerance to added oxygen decreases asp ^–3 top ^–4, dependent on gas mixture. Nevertheless sealed operation for >10⁵ shots has been obtained with a 5% CO₂5% CO3% N₂2% H₂85% He gas mixture at a total pressure of 5 bar.     

Muonium quantum diffusion and spin dynamics in solid xenon

We present measurements of the transverse (T ₂ ^–1 ) and longitudinal (T ₁ ^–1 ) spin relaxation rates of muonium (Mu) atoms in solid natural xenon (n-Xe) as well as pure¹³⁶Xe (which has no nuclear moments). The temperature dependences ofT ₂ ^–1 andT ₁ ^–1 in natural Xe belowT 115 K demonstrate the quantum character of Mu diffusion governed by one-phonon interactions. Taking into account both the polaron effect (PE) and the effect of fluctuational preparation of the barrier (FPB) makes it possible to consistently describe Mu diffusion in Xe. Mu spin relaxation in¹³⁶Xe at high temperatures is not due to nuclear hyperfine (NHF) interactions.     

R branch tuning characteristics of the13CH3F Raman FIR laser

Summary We described a¹³CH₃F Raman laser pumped by a grating tuned 20 atmospheres CO₂ laser. The emission characteristics of the¹³CH₃F laser extends from 14 cm^–1–35 cm^–1 and from 49 cm^–1–72 cm^–1; about 65% of these frequency ranges can be covered with tunable radiation. The characteristics shows a strong dependence on the rotaional quantum numbers of the states involved in the Raman laser transitions and, within each tuning interval, on the frequency offset with respect to the frequencies of resonant transitions. We obtained, at 51 cm^–1, a maximum FIR laser pulse energy of about 800 J (at a pump energy of 200 mJ), corresponding to a photon conversion of about 8%. In some cases we have observed simultaneous emission at a Raman and a cascade frequency. In addition, FIR emission power dependence on¹³CH₃F gas pressure and pump pulse power were investigated for different J quantum numbers.     

Degenerate four-wave-mixing spectroscopy in NaH

We performed DFWM spectroscopy on X ^–1+–A ¹⁺ transitions in NaH produced in an indirect photochemical reaction between Na(3p) and H₂ and detected v=1, 2 and 3 ground state vibrational levels of NaH molecules, whereas with resonance enhanced CARS, we observed v=0 levels only. This different sensitivity can be explained by considering the Franck-Condon-factors and the relevant damping coefficients for the corresponding transitions in the NaH molecule. Time resolved DFWM spectroscopy showed that NaH(v=1) molecules effectively live much longer than Na(3p) atoms which merely follow the laser excitation pulse.     

Collisional excitation X-ray laser experiments in plasmas produced by 0.53-μm and 0.35-μm laser light

Recent Ne- and Ni-like X-ray laser experiments carried out at the Centre d'Etudes de Limeil-Valenton (CEL-V) are reviewed. A variety of experiments in Ne-like X-ray lasers were performed; here we discuss measurements of soft X-ray amplification in Ge (Z=32) and Sr (Z=38) plasmas. In Ge plasmas produced by 0.53-m laser light at an irradiance of 6.0×10¹³ W/cm², gains between 2.2–2.5 cm^–1 on the 232.2 and 236.2 Å J=2–1 lines and a gain of 1.0 cm^–1 on the 196.1 Å J=0–1 line were measured. In addition, gains of 4.4 cm^–1 and 4.0 cm^–1 have been demonstrated on the J=2–1 transitions at 164.1 and 166.5 Å in Nelike Sr at laser intensities of 1.3×10¹⁴ W/cm². The effects of pumping the Ne-like Se X-ray laser with 0.35-m laser light have also been investigated; the Se lasing spectra is similar to that obtained with 0.53-m light. Experiments have also been carried out to optimize the gain of the 50.3 Å Ni-like Yb (Z=70) J=0–1 line. For Yb, no significant increase in gain over that previously reported was seen, but the time history of the Ni-like Yb X-ray laser was measured for the first time. Finally, attempts to extrapolate the Ni-like results to shorter wavelength were made using Ta (Z=73), W (Z=74), and Re (Z=75). No definitive observation of the Ni-like J=0–1 lasing lines was made in these experiments.     

Nearest neighbor effect on capture cross sections measured in IR phototransients on Si:In

The extrinsic photoconductive decay at T=20–100 K is analyzed in FZ-grown Si: In material after pulsed irradiation by a PbSSe infrared laser (=4 m). Trapping time constants (=10 ns-100 s) are resolved for the prevalent In acceptor (N _In=10¹⁶–10¹⁷ cm^–3) and for additional shallow acceptors B, Al, and the X(In)-center present at low concentrations (N=10¹²–10¹⁴ cm^–3). Hole capture cross sections determined for the acceptor levels show a large scatter over up to 4 orders of magnitude. It is shown that the capture cross section is dependent on all the dopant concentrations present in the sample due to nearest neighbor interaction. Due to the formation of donor-acceptor dipoles, the capture cross section assumes low values. A model calculation of the interaction based on only fundamental parameters of Si is in accordance with the experimental data within the experimental error. The hole capture cross sections for isolated acceptors are _p=1×10^–12, 1×10^–14, 1×10^–13, 2.5×10^–13 cm² for indium, X-center, aluminum, and boron at the temperatures T=95 K, 100 K, 70 K, 45 K, respectively.     

Observation of new laser transitions and saturation effects in optically pumped NO

We report investigations of an NO laser employing specially profiled magnetic fields of up to 3.4T, and F₂ pump laser intensities as great as 20 MW cm^–2. We have observed laser oscillation at 226 nm on a rotational branch of the B'-X/it(3–11) band of NO for the first time, in addition to the previously reported oscillation at 218 nm on the B'-X/it(3–10) band. We have also observed visible laser emission on a rotational branch of the B ²-B ² II(3–1) band of NO. Saturation of the NO laser pulse energy with pump intensity has been observed, the total NO laser pulse energy having been increased to 490 J. The possibility of increasing the NO laser pulse energy towards 1 mJ per transition is discussed.     

Continuous laser emission from sodium atoms by collision assisted two-step excitation

Continuous laser oscillation on different lines in the spectral range of 1.85 to 3.41 m, corresponding to transitions between higher lying atomic sodium levels, has been obtained by optical excitation of sodium vapor with Rhodamine 6G dye-laser radiation, tuned either around the 3p–4d resonance ( 568 nm) or the 3p–5s resonance ( 615 nm). The pump mechanism consists of an atomic two-step excitation as well as an excitation of diatomic sodium molecules and subsequent molecular-atomic collisional energy transfer. Laser operation with low threshold pump power (<10 mW) and large pump laser detuning (500 GHz) has been observed.     

Femtosecond-pulse laser ablation of human corneas

A femtosecond pulse laser in the visible spectral region shows promise as a potentially new powerful corneal sculpting tool. It combines the clinical and technical advantages of visible wavelengths with the high ablation quality observed with nanosecond-pulse excimer lasers at 193 nm. A femtosecond and a nanosecond dye laser with pulse durations of 300 fs and 7 ns, and centre wavelengths at 615 nm and 600 nm, respectively, both focused to an area of the order of 10^–5 cm², have been applied to human corneal ablation. Nanosecond laser pulses caused substantial tissue disruption within a 30–100 m range from the excision edge at all fluences above the ablation threshold of F _th60 J cm^–2 (I _th9 GW cm^–2). Completely different excisions are produced by the femtosecond-pulse laser: high quality ablations of the Bowman membrane and the stroma tissue characterised by damage zones of less than 0.5 m were observed at all fluences above ablation threshold of F _th1 J cm^–2 or I _th3 TW cm^–2 (3×10¹² W cm^–2). The transparent cornea material can be forced to absorb ultrashort pulses of extremely high intensity. The fs laser generates its own absorption by a multiphoton absorption process.     

An XeCl* Excimer Fluorescence Study on the Pulse Radiolysis of Xe–nCCl4 and Xe–SOCl2 Systems

The mechanism and kinetics of energy transfer from highly excited Xe states (E _ex > 9.5 eV), generated by a 12-ns electron beam, to chlorine donor molecules were deduced from time-resolved spectra of fluorescence in the region 240–340 nm. The emissions at 240–250 nm were assigned to Xe₂** excimers, and those at 308 and 340 nm to XeCl(B) and XeCl(C) states. Kinetic analysis of the recorded spectra for Xe–CCl₄ and Xe–SOCl₂ gas mixtures at constant xenon pressure and various pressures of molecular admixtures (0.1–1 Torr) allowed us to find the rate constants for the reactions (5) Xe** + RCI products, (6a) Xe** + RCl XeCl(B) + R*, and (6b) Xe** + RCl XeCl(C) + R*, where R is any radical.     

Infrared absorption of silane,ammonia, acetylene and diborane in the range of the CO2 laser emission lines: Measurements and modelling

Absorption spectra of the gases SiH₄, NH₃, C₂H₂ and of SiH₄/Ar and SiH₄/B₂H₆ mixtures have been measured in the spectral range of the CO₂ laser from 9.2 to 10.8 µm. In agreement with literature, silane shows the highest absorption (absorption coefficient = 3.3 × 10^–2 Pa^–1 m^–1). The deviation of the measured absorption behaviour of silane from literature, as far as the pressure dependence is concerned, can be explained by the enhanced spectral energy density in our experiment. This is confirmed by a rate-equation model involving the basic mechanisms of V-V and V-T energy transfer between vibrationally excited silane molecules. In contrast to silane, the absorption coefficient of NH₃ at the 10P(20) laser line is 4.5 × 10^–4 Pa^–1 m^–1 atp = 20 kPa and has its maximum of 4.5 × 10^–3 Pa^–1 m^–1 at the 10R(6) laser line. For C₂H₂ and B₂H₆, is even less ( 2.1 Ò 10^–5 Pa^–1 m^–1 for C₂H₂).     

NaK 22Σ+ → 11Σ+ band optically pumped laser near 1.02 μm

Optically pumped laser emission has been observed on the NaK 2(A)¹⁺ 1(X)¹⁺ electronic state transition. The emission occurs between 1.015 and 1.035 m when a sodium-potassium heat-pipe oven is pumped with 695–745 nm pulsed dye laser radiation. The laser emission occurs on many ro-vibrational transitions without the use of cavity mirrors. However, the addition of a simple cavity increases both the number of observed lasing transitions and the amplitude of the emission on each line. We report our results for the dependence of the emission intensity on pump laser power, oven temperature, and buffer gas pressure.     

Influence of the overall pressure on electrical conductivity of the amorphous semiconductor Ge15Te81S2As2

The experimental results obtained with the chalcogenide glass Ge₁₅Te₈₁S₂As₂ with imposed overall pressure up to 700 MPa are presented. The material exhibits the switching effect and the memory effect. It is shown that the overall pressure changes remarkably d.c. electrical conductivity of the amorphous semiconductor. It is assumed that the changes in conductivity are caused by changes in activation energy. The changes in activation energy within the range of considered pressures are, as follows from our measurements, E/p–10·95×10^–5 eV/MPa +p × 10·41 W 10^–7 eV/MPa². The assumption of the activation energy dependence on pressurep are confirmed also by measurements of dependence In vs. 1/T at various pressures.     

Reactive pulsed laser deposition and laser induced crystallization of SnO2 transparent conducting thin films

Transparent conducting SnO₂ thin films with a thickness between 1000–2000 Å were deposited on glass, quartz and silicon substrates using standard pulsed laser deposition techniques with two different targets (Sri and SnO₂) and with three different laser wavelengths (1.06, 0.532 and 0.266 ) from a Q-switched Nd: YAG laser. Tin dioxide films with optical transmission over most of the visible spectrum exceeding 80% were obtained using a Sn target and a background oxygen pressure of 20 Pa. The electrical resistivity () depended strongly on the substrate temperature during deposition, with the lowest values of of about 10^–2 -cm obtained when the substrate was maintained at 400°C during deposition. Using SnO₂ targets, predominantly amorphous phase SnO₂ films were deposited on Si substrates and then transformed into polycrystalline Sn₃O₄ by laser induced crystallization ( = 1.06 m). Whereas these later films were essentially non-conducting as deposited ( > 400 -cm), the electrical resistivity was permanently reduced after laser induced crystallization by a factor greater than 1000 to a value of approximately 4 × 10^–1 -cm.     

Magnetic hyperfine interaction of swift43 K ions recoiling in helium and xenon

The 738 keV 7/2^– isomeric state in⁴³K (=292 ± 5 ns,g=1.266 ± 0.015) was produced in the reaction⁴He(⁴⁰Ar,p) using the 185 MeV pulsed⁴⁰Ar beam of VICKSI and a 2–7 bar helium target cell. The suitability of this isomeric state for hyperfine studies during recoil in gases and after implantation into solids was investigated via the TDPAD technique. The hyperfine deorientation of highly stripped⁴³K ions in He and Xe was investigated and interpreted with the AbragamPound model. When adding up to 15% Xe to the He target gas, a near-exponential loss of alignment with the Xe partial pressure was observed. This effect can be explained by K-hole production in⁴³K in the Xe-K collision for which a cross section of=5 · 10^–18 cm² was estimated.     

Y1Ba2Cu3O7-δ thin films from KrF laser ablation with substrate heating and in situ patterning by CO2 laser radiation

Y₁Ba₂Cu₃O_7– thin films were deposited by KrF laser ablation while replacing conventional contact heating by cw CO₂ laser irradiation of the substrate front surface. The HTSC films obtained on (100)ZrO₂ showed T _c(R=0)=90 K, T(90–10%)=0.5 K, j _c=2.5 × 10⁶ A/cm², a sharp transition in the ac susceptibility X(T), and pure c-axis orientation. Micrographs of thin films (< 0.5 m) showed a smooth morphology while thick films (>1 m) contained many crystallites sticking in the bulk material. Furthermore, in situ patterning was achieved during deposition by local laser heating of a selected substrate surface area. The resulting planar films contained amorphous, semiconducting parts only 1 mm or less apart from crystalline material showing the above HTSC quality.Presented at LASERION '91, June 12–14, 1991, München (Germany)     

Dynamics of the CO2 lower laser levels as measured with a tunable diode laser

A tunable diode laser operating in the 4.3 m region is used to probe a conventional cw CO₂ laser discharge. Vibrational populations in the 10⁰0, 02⁰0, 02²0, and 01¹0 levels of CO₂ are measured under lasing conditions, i.e., in the presence of intense 10.4 and 9.4 m fields. The tunable diode laser is also used to monitor the energy transfer processes between the four levels after the passage of an intense 10.4 m pulse. The detailed information provided by the tunable probe laser enables us to determineseparately all the vibration-vibration (V-V) and vibration-translation (V-T) rate constants of importance in the relaxation of the lower laser levels in CO₂. The V-V rate constants are found to vary from a low value of 4.5×10⁴ s^–1 Torr^–1 for the coupling of 01¹0 to 10⁰0 to a high value of 8.0×10⁵ s^–1 Torr^–1 for the coupling of 01¹0 to 02²0.This work was supported by the National Science and Engineering Research Council of Canada and the Provincial Government of Ontario     

Far infrared sub-nanosecond pulse generation in GaP with a time-synchronized mode-locked double-frequency Nd: Glass laser system

Light pulses of 149 m wavelength and 700 ps duration are generated by non-collinear phase-matched difference frequency mixing of laser pulses at 1053.5 and 1061 nm in a (110) cut GaP crystal. The pump laser pulses are generated in a time-synchronized mode-locked double-frequency Nd:glass laser system consisting of a silicate glass branch and a phosphate glass branch. A photon conversion efficiency of 4 × 10^–6 is achieved. The non-linear susceptibility constant of GaP is determined to be d ₁₄ = (10 ± 1) pm V^–1.     

Electrostatic lattice coefficients and binding energy of orthorhombic La2-x Sr x CuO4

Three valency models for orthorhombic La_2-x Sr _x CuO₄ were investigated for increasing Sr concentrationsx (0x0.21): 1. Cu²⁺Cu³⁺, 2. apex O^2–O^– and 3. in-plane O^2–O^–. All calculations were done by using structural parameters valid for the temperature range from 10 to 22 K. We thereby calculated the electrostatic interaction energy which, next to ionization potentials and electron affinities, comprises a major of the binding energyE _B of crystals. Second-order effects were accounted for by calculating the strength of ionic dipole moments induced by crystal electric fields at relevant lattice sites. Their largest strengths are comparable to the dipole moment of the water molecule. Three out of five dipoles in La_2-x Sr _x CuO₄ vanish during the transition from the orthorhombic to the tetragonal phase. The binding energy differences between the different models suggest that the system is in a state of model 1. However, the differences are very small, being in the order of 0.3 to 0.76 eV atx=0.13.