Mechanisms and energetics of hydride dissociation reactions on surfaces of plasma-deposited silicon thin films

We report results from a detailed analysis of the fundamental silicon hydride dissociation processes on silicon surfaces and discuss their implications for the surface chemical composition of plasma-deposited hydrogenated amorphous silicon (a-Si:H) thin films. The analysis is based on a synergistic combination of first-principles density functional theory (DFT) calculations of hydride dissociation on the hydrogen-terminated Si(001)-(2x1) surface and molecular-dynamics (MD) simulations of adsorbed SiH(3) radical precursor dissociation on surfaces of MD-grown a-Si:H films. Our DFT calculations reveal that, in the presence of fivefold coordinated surface Si atoms, surface trihydride species dissociate sequentially to form surface dihydrides and surface monohydrides via thermally activated pathways with reaction barriers of 0.40-0.55 eV. The presence of dangling bonds (DBs) results in lowering the activation barrier for hydride dissociation to 0.15-0.20 eV, but such DB-mediated reactions are infrequent. Our MD simulations on a-Si:H film growth surfaces indicate that surface hydride dissociation reactions are predominantly mediated by fivefold coordinated surface Si atoms, with resulting activation barriers of 0.35-0.50 eV. The results are consistent with experimental measurements of a-Si:H film surface composition using in situ attenuated total reflection Fourier transform infrared spectroscopy, which indicate that the a-Si:H surface is predominantly covered with the higher hydrides at low temperatures, while the surface monohydride, SiH((s)), becomes increasingly more dominant as the temperature is increased.     

First-principles theoretical analysis of silyl radical diffusion on silicon surfaces

We report results from a detailed analysis of the fundamental radical precursor diffusion processes on silicon surfaces and discuss their implications for the surface smoothness of hydrogenated amorphous silicon (a-Si:H) thin films. The analysis is based on a synergistic combination of first-principles density functional theory (DFT) calculations of SiH(3) radical migration on the hydrogen-terminated Si(001)-(2 x 1) surface with molecular-dynamics (MD) simulations of SiH(3) radical precursor migration on surfaces of a-Si:H films. Our DFT calculations yield activation energies for SiH(3) migration that range from 0.18 to 0.89 eV depending on the local electronic environment on the Si(001)-(2 x 1):H surface. In particular, when no substantial surface relaxation (Si-Si bond breaking or formation) accompanies the hopping of the SiH(3) radical the activation barriers are highest, whereas hopping between nearest-neighbor overcoordinated surface Si atoms results in the lowest radical diffusion barrier of 0.18 eV; this low barrier is consistent with the activation barrier for SiH(3) migration through overcoordinated sites on the a-Si:H surface. Specifically, the analysis of the MD simulations of SiH(3) radical migration on a-Si:H surfaces yields an effective diffusion barrier of 0.16 eV, allowing for the rapid migration of the SiH(3) radical prior to its incorporation in surface valleys; rapid migration and subsequent incorporation constitute the two-step mechanism responsible for the smoothness of plasma deposited a-Si:H thin films.     

Effects of argon dilution on the translational and rotational temperatures of SiH in silane and disilane plasmas

The effects of argon dilution on the translational and rotational temperatures of SiH in both silane and disilane plasmas have been investigated using the imaging of radicals interacting with surfaces (IRIS) technique. The average rotational temperature of SiH determined from the SiH excitation spectra is approximately 500 K in both SiH(4)/Ar and Si(2)H(6)/Ar plasmas, with no obvious dependence on the fraction of argon dilution. Modeling of kinetic data yields average SiH translational temperatures of approximately 1000 K, with no dependence on the fraction of argon in the SiH(4)/Ar plasmas within the studied range. In the Si(2)H(6)/Ar plasmas, however, the translational temperature decreases from approximately 1000 to approximately 550 K as the Ar fraction in the plasma increases. Thus, at the highest Ar fractions, the translational and rotational temperatures are nearly identical, indicating that the SiH radicals are thermally equilibrated. The underlying chemistry and mechanisms of SiH energy equilibration in Ar-diluted plasmas are discussed.     

Ab initio chemical kinetics for SiH3 reactions with Si(x)H2x+2 (x = 1-4)

Gas-phase kinetics and mechanisms of SiH(3) reactions with SiH(4), Si(2)H(6), Si(3)H(8), and Si(4)H(10), processes of relevance to a-Si thin-film deposition, have been investigated by ab initio molecular orbital and transition-state theory (TST) calculations. Geometric parameters of all the species involved in the title reactions were optimized by density functional theory at the B3LYP and BH&HLYP levels with the 6-311++G(3df,2p) basis set. The potential energy surface of each reaction was refined at the CCSD(T)/6-311++G(3df,2p) level of theory. The results show that the most favorable low energy pathways in the SiH(3) reactions with these silanes occur by H abstraction, leading to the formation of SiH(4) + Si(x)H(2x+1) (silanyl) radicals. For both Si(3)H(8) and n-Si(4)H(10) reactions, the lowest energy barrier channels take place by secondary Si-H abstraction, yielding SiH(4) + s-Si(3)H(7) and SiH(4) + s-Si(4)H(9), respectively. In the i-Si(4)H(10) reaction, tertiary Si-H abstraction has the lowest barrier producing SiH(4) + t-Si(4)H(9). In addition, direct SiH(3)-for-X substitution reactions forming Si(2)H(6) + X (X = H or silanyls) can also occur, but with significantly higher reaction barriers. A comparison of the SiH(3) reactions with the analogous CH(3) reactions with alkanes has been made. The rate constants for low-energy product channels have been calculated for the temperature range 300-2500 K by TST with Eckart tunneling corrections. These results, together with predicted heats of formation of various silanyl radicals and Si(4)H(10) isomers, have been tabulated for modeling of a-Si:H film growth by chemical vapor deposition.     

Thermally activated mechanisms of hydrogen abstraction by growth precursors during plasma deposition of silicon thin films

Hydrogen abstraction by growth precursors is the dominant process responsible for reducing the hydrogen content of amorphous silicon thin films grown from SiH(4) discharges at low temperatures. Besides direct (Eley-Rideal) abstraction, gas-phase radicals may first adsorb on the growth surface and abstract hydrogen in a subsequent process, giving rise to thermally activated precursor-mediated (PM) and Langmuir-Hinshelwood (LH) abstraction mechanisms. Using results of first-principles density functional theory (DFT) calculations on the interaction of SiH(3) radicals with the hydrogen-terminated Si(001)-(2x1) surface, we show that precursor-mediated abstraction mechanisms can be described by a chemisorbed SiH(3) radical hopping between overcoordinated surface Si atoms while being weakly bonded to the surface before encountering a favorable site for hydrogen abstraction. The calculated energy barrier of 0.39 eV for the PM abstraction reaction is commensurate with the calculated barrier of 0.43-0.47 eV for diffusion of SiH(3) on the hydrogen-terminated Si(001)-(2x1) surface, which allows the radical to sample the entire surface for hydrogen atoms to abstract. In addition, using the same type of DFT analysis we have found that LH reaction pathways involve bond breaking between the silicon atoms of the chemisorbed SiH(3) radical and the film prior to hydrogen abstraction. The LH reaction pathways exhibit energy barriers of 0.76 eV or higher, confining the abstraction only to nearest-neighbor hydrogens. Furthermore, we have found that LH processes compete with radical desorption from the hydrogen-terminated Si(001)-(2x1) surface and may be suppressed by the dissociation of chemisorbed SiH(3) radicals into lower surface hydrides. Analysis of molecular-dynamics simulations of the growth process of plasma deposited silicon films have revealed that qualitatively similar pathways for thermally activated hydrogen abstraction also occur commonly on the amorphous silicon growth surface.     

Thermal decomposition mechanism of disilane

Thermal decomposition of disilane was investigated using time-of-flight (TOF) mass spectrometry coupled with vacuum ultraviolet single-photon ionization (VUV-SPI) at a temperature range of 675-740 K and total pressure of 20-40 Torr. Si(n)H(m) species were photoionized by VUV radiation at 10.5 eV (118 nm). Concentrations of disilane and trisilane during thermal decomposition of disilane were quantitatively measured using the VUV-SPI method. Formation of Si(2)H(4) species was also examined. On the basis of pressure-dependent rate constants of disilane dissociation reported by Matsumoto et al. [J. Phys. Chem. A 2005, 109, 4911], kinetic simulation including gas-phase and surface reactions was performed to analyze thermal decomposition mechanisms of disilane. The branching ratio for (R1) Si(2)H(6) --> SiH(4) + SiH(2)/(R2) Si(2)H(6) --> H(2) + H(3)SiSiH was derived by the pressure-dependent rate constants. Temperature and reaction time dependences of disilane loss and formation of trisilane were well represented by the kinetic simulation. Comparison between the experimental results and the kinetic simulation results suggested that about 70% of consumed disilane was converted to trisilane, which was observed as one of the main reaction products under the present experimental conditions.     

Ab initio surface reaction energetics of SiH4 and Si2H6 on Si(001)-(2 x 2)

First-principles pseudopotential calculations, within a simple dynamically constrained scheme, have been performed to investigate the reaction of 0.25 ML coverage of SiH4 and Si2H6 with the Si(001)-(2 x 2) surface. The silane molecule (SiH4) is adsorbed on to the surface at a number of different sites (on dimer, interrow, or intrarow) with varying barrier heights. Two distinct structures, which are similar in energy, arise from the initial dissociative reaction SiH4-->SiH3(silyl) + H, where the dissociated species are adsorbed either on the same dimer components or on adjacent dimer components. Several further decays of silyl from SiH4 are presented in two separate regimes of high and low ambient hydrogen coverages. The decomposition of silyl can form two different bridging structures: an on top or an intrarow bridging structure in both of the two hydrogen coverage regimes. The disilane molecule (Si2H6) is also adsorbed upon this surface with varying energy barriers, resulting in a dissociation reaction where two SiH3 species are adsorbed on one dimer or in an adjacent dimer configuration. Plausible energy reaction paths for the above models are presented. The stability of the SiH2 species is also discussed.     

The role of multifunctional kinetics during early-stage silicon hydride pyrolysis: reactivity of Si2H2 isomers with SiH4 and Si2H6

Kinetic parameters for the dominant pathways during the addition of the four Si(2)H(2) isomers, i.e., trans-HSiSiH, SiSiH(2), Si(H)SiH, and Si(H(2))Si, to monosilane, SiH(4), and disilane, Si(2)H(6), have been calculated using G3//B3LYP, statistical thermodynamics, conventional and variational transition state theory, and internal rotation corrections. The direct addition products of the multifunctional Si(2)H(2) isomers were monofunctional substituted silylenes, hydrogen-bridged species, and silenes. During addition to monosilane and disilane, the SiSiH(2) isomer was found to be most reactive over the temperature range of 800 to 1200 K. Revised parameters for the Evans-Polanyi correlation and a representative pre-exponential factor for multifunctional silicon hydride addition and elimination reaction families under pyrolysis conditions were regressed from the reactions in this study. This revised kinetic correlation was found to capture the activation energies and rate coefficients better than the current literature methods.     

Bonding structure of phenylacetylene on hydrogen-terminated Si(111) and Si(100): surface photoelectron spectroscopy analysis and ab initio calculations

Interfaces between phenylacetylene (PA) monolayers and two silicon surfaces, Si(111) and Si(100), are probed by X-ray photoelectron spectroscopy (XPS), ultraviolet photoelectron spectroscopy (UPS), and near-edge X-ray absorption fine structure (NEXAFS) spectroscopy, and the results are analyzed using ab initio molecular orbital calculations. The monolayer systems are prepared via the surface hydrosilylation reaction between PA and hydrogen-terminated silicon surfaces. The following spectral features are obtained for both of the PA-Si(111) and PA-Si(100) systems: a broad π-π* shakeup peak at 292 eV (XPS), a broad first ionization peak at 3.8 eV (UPS), and a low-energy C 1s → π* resonance peak at 284.3 eV (NEXAFS). These findings are ascribed to a styrene-like π-conjugated molecular structure at the PA-Si interface by comparing the experimental data with theoretical analysis results. A conclusion is drawn that the vinyl group can keep its π-conjugation character on the hydrogen-terminated Si(100) [H:Si(100)] surface composed of the dihydride (SiH(2)) groups as well as on hydrogen-terminated Si(111) having the monohydride (SiH) group. The formation mechanism of the PA-Si(100) interface is investigated within cluster ab initio calculations, and the possible structure of the H:Si(100) surface is discussed based on available data.     

Chemical and electrical passivation of single-crystal silicon(100) surfaces through a two-step chlorination/alkylation process

Single-crystal Si(100) surfaces have been functionalized by using a two-step radical chlorination-Grignard (R = MgCl, R = CH3, C2H5, C4H9, C6H5, or CH2C6H5) alkylation method. After alkylation, no chlorine was detectable on the surface by X-ray photoelectron spectroscopy (XPS), and the C 1s region showed a silicon-induced peak shift indicative of a Si-C bond. The relative intensity of this peak decreased, as expected, as the steric bulk of the alkyl increased. Despite the lack of full alkyl termination of the atop sites of the Si(100) surface, functionalization significantly reduced the rate of surface oxidation in air compared to that of the H-terminated Si(100) surface, with alkylated surfaces forming less than half a monolayer of oxide after over one month of exposure to air. Studies of the charge-carrier lifetime with rf photoconductivity decay methods indicated a surface recombination velocity of <30 cm s(-1) for methylated surfaces, and <60 cm s(-1) for Si surfaces functionalized with the other alkyl groups evaluated. Soft X-ray photoelectron spectroscopic data indicated that the H-Si(100) surfaces were terminated by SiH, SiH2, and SiH3 species, whereas Cl-Si(100) surfaces were predominantly terminated by monochloro (SiCl and SiHCl) and dichloro (SiCl2 and SiHCl2) Si species. Methylation produced signals consistent with termination by Si-alkyl bonding arising from SiH(CH3)-, SiH2(CH3)-, and Si(CH3)2-type species.     

Synthesis and fundamental studies of (H3Ge)xSiH4-x molecules: precursors to semiconductor hetero- and nanostructures on Si

The synthesis of the entire silyl-germyl sequence of molecules (H(3)Ge)(x)SiH(4)(-)(x) (x = 1-4) has been demonstrated. These include the previously unknown (H(3)Ge)(2)SiH(2), (H(3)Ge)(3)SiH, and (H(3)Ge)(4)Si species as well as the H(3)GeSiH(3) analogue which is obtained in practical high-purity yields as a viable alternative to disilane and digermane for semiconductor applications. The molecules are characterized by FTIR, multinuclear NMR, mass spectrometry, and Rutherford backscattering. The structural, thermochemical, and vibrational properties are studied using density functional theory. A detailed comparison of the experimental and theoretical data is used to corroborate the synthesis of specific molecular structures. The (H(3)Ge)(x)SiH(4)(-)(x) family of compounds described here is not only of intrinsic molecular interest but also provides a unique route to a new class of Si-based semiconductors including epitaxial layers and coherent islands (quantum dots), with Ge-rich stoichiometries SiGe, SiGe(2), SiGe(3), and SiGe(4) reflecting the Si/Ge content of the corresponding precursor. The layers grow directly on Si(100) at unprecedented low temperatures of 300-450 degrees C and display homogeneous compositional and strain profiles, low threading defect densities, and atomically planar surfaces circumventing entirely the need for conventional graded compositions or lift-off technologies. The activation energies of all Si-Ge hydride reactions on Si(100) (E(a) approximately 1.5-2.0 eV) indicate high reactivity profiles with respect to H(2) desorption, consistent with the low growth temperatures of the films. The quantum dots are obtained exclusively at higher temperatures (T > 500 degrees C) and represent a new family of Ge-rich compositions with narrow size distribution, defect-free microstructures, and homogeneous, precisely tuned elemental content at the atomic level.     

Formation of organic monolayers on silicon via gas-phase photochemical reactions

A new method for the formation of molecular monolayers on silicon surfaces utilizing gas-phase photochemical reactions is reported. Hydrogen-terminated Si(111) surfaces were exposed to various gas-phase molecules (hexene, benzaldehyde, and allylamine) and irradiated with ultraviolet light from a mercury lamp. The surfaces were studied with in situ Fourier transform infrared spectroscopy, high-resolution electron energy loss spectroscopy, and scanning tunneling microscopy. The generation of gas-phase radicals was found to be the initiator for organic monolayer formation via the abstraction of hydrogen from the H/Si(111) surface. Monolayer growth can occur through either a radical chain reaction mechanism or through direct radical attachment to the silicon dangling bonds.     

Kinetic calculation for the reaction of H with Si_2H_6 using the variational transition state theory

The reaction of disilane with atomic hydrogen has been studied. This reaction involves both substitution and abstraction. Calculations show that the hydrogen abstraction is the strongest competing channel. The canonical variational transition state theory with a small curvature tunneling correction (SCT) has been used for the kinetic calculation. The theoretical results are in good agreement with the available experimental data. Comparing the reactions of atomic hydrogen with disilane and silane, it can be seen that the reactivity of the Si-H bond is higher in Si2H6than that in SiH4.     

Density functional theory study of one-dimensional growth of styrene on the hydrogen-terminated Si(001)-(3 x 1) surface

Recent experimental work has shown that the addition of styrene molecules to hydrogen-terminated Si(001) surfaces leads to the formation of one-dimensional molecular structures through a radical-initiated surface chain reaction mechanism. These nanometric structures are observed to be directed parallel to the dimer rows on the H-Si(001)-(2 x 1) surface and perpendicular to the same rows on H-Si(001)-(3 x 1). Using periodic density functional theory (DFT) calculations, we have studied the initial steps of the radical chain mechanism on the H-Si(001)-(3 x 1) surface and compared them to analogous results for H-Si(001)-(2 x 1). On the H-Si(001)-(3 x 1) surface, one of the crucial steps of the surface chain reaction, namely, the abstraction of a H atom from a nearby surface hydride unit, is found to have a somewhat smaller activation energy in the direction perpendicular to the dimer rows (H abstraction from the nearest dihydride site) than along the rows (H abstraction from a neighboring dimer). Additionally, due to the steric repulsion between the styrene molecules and the SiH2 subunits, growth along the dimer rows is not thermodynamically favorable on the (3 x 1) surface. On the other hand, due to the absence of the SiH2 subunits, growth parallel to the Si dimer rows becomes favored on the H-Si(001)-(2 x 1) surface.     

Monobridged Si2H4

The rotational spectrum of a new monobridged isomer of Si(2)H(4), denoted here as H(2)Si(H)SiH, has been detected by Fourier transform microwave spectroscopy of a supersonic molecular beam through the discharge products of silane. On the basis of high-level coupled cluster theory, this isomer is calculated to lie only 7 kcalmol above disilene (H(2)SiSiH(2)), the most stable isomeric arrangement of Si(2)H(4), and to be fairly polar, with a calculated dipole moment of mu = 1.14 D. The rotational spectrum of H(2)Si(H)SiH exhibits closely spaced line doubling, characteristic of a molecule undergoing high-frequency inversion. Transition state calculations indicate that inversion probably occurs in two steps: migration of the bridged hydrogen atom to form silylsilylene, H(3)SiSiH, and then internal rotation of the SiH(3) group, followed by the reverse process. The potential energy surface for this type of inversion is quite shallow, with a barrier height of only 2-3 kcalmol. Searches for the rotational lines of silylsilylene, calculated to be of comparable stability to H(2)Si(H)SiH but about five times less polar (mu = 0.23 D), have also been undertaken, so far without success, even though strong lines of H(2)Si(H)SiH have been detected. The favorable energetics and high polarity of monobridged Si(2)H(4) with respect to either disilene or silylsilylene make it a plausible candidate for radioastronomical detection in sources such as IRC + 10216, where comparably large silicon molecules such as SiS, SiC(3), and SiC(4) have already been discovered.     

(Me3Si)3SiH: twenty years after its discovery as a radical-based reducing agent

This Concept shows the flexibility and applicability of (Me3Si)3SiH in several synthetic transformations, such as radical reductions, consecutive radical reactions and hydrosilylation. The reactivity of (Me3Si)3SiH combines the multidisciplinary aspects of physical organic chemistry and organic synthesis, extending to polymers and materials science, as in the functionalization of flat silicon surfaces.     

High-resolution soft X-ray photoelectron spectroscopic studies and scanning auger microscopy studies of the air oxidation of alkylated silicon(111) surfaces

High-resolution soft X-ray photoelectron spectroscopy was used to investigate the oxidation of alkylated silicon(111) surfaces under ambient conditions. Silicon(111) surfaces were functionalized through a two-step route involving radical chlorination of the H-terminated surface followed by alkylation with alkylmagnesium halide reagents. After 24 h in air, surface species representing Si(+), Si(2+), Si(3+), and Si(4+) were detected on the Cl-terminated surface, with the highest oxidation state (Si(4+)) oxide signal appearing at +3.79 eV higher in energy than the bulk Si 2p(3/2) peak. The growth of silicon oxide was accompanied by a reduction in the surface-bound Cl signal. After 48 h of exposure to air, the Cl-terminated Si(111) surface exhibited 3.63 equivalent monoleyers (ML) of silicon oxides. In contrast, after exposure to air for 48 h, CH(3)-, C(2)H(5)-, or C(6)H(5)CH(2)-terminated Si surfaces displayed <0.4 ML of surface oxide, and in most cases only displayed approximately 0.20 ML of oxide. This oxide was principally composed of Si(+) and Si(3+) species with peaks centered at +0.8 and +3.2 eV above the bulk Si 2p(3/2) peak, respectively. The silicon 2p SXPS peaks that have previously been assigned to surface Si-C bonds did not change significantly, either in binding energy or in relative intensity, during such air exposure. Use of a high miscut-angle surface (7 degrees vs < or =0.5 degrees off of the (111) surface orientation) yielded no increase in the rate of oxidation nor change in binding energy of the resultant oxide that formed on the alkylated Si surfaces. Scanning Auger microscopy indicated that the alkylated surfaces formed oxide in isolated, inhomogeneous patches on the surface.     

Effects of alloying on the chemistry of CO and H2S on Fe surfaces

Deleterious gases such as CO and H(2)S can cause degradation of steel by reacting with the metal surface. Here we consider whether alloying the steel surface might be able to inhibit these damaging surface reactions by raising the barriers to molecular dissociation. We employ first-principles density functional theory techniques to investigate the elementary reaction pathways and barriers for CO and H(2)S on FeAl and Fe(3)Si surfaces and compare them with pure Fe surfaces (as a model for steel). We find that H(2)S dissociates on iron surfaces much more easily than CO does. Although FeAl surfaces raise the barriers for H(2)S dissociation, they significantly lower the barriers for CO dissociation. On the other hand, Fe(3)Si surfaces raise the barriers for CO dissociation, but they are as vulnerable as Fe surfaces to H(2)S dissociation. Our findings suggest that alloying iron with Al or Si is unlikely to simultaneously increase its resistance to the initial stages of chemical degradation by CO and H(2)S.     

Structures, energetics, and aromaticities of the tetrasilacyclobutadiene dianion and related compounds: (Si4H4)(2-), (Si4H4)(2-)·2Li+, [Si4(SiH3)4](2-)·2Li+, [Si4(SiH3)4](2-)·2Na+, and [Si4(SiH3)4](2-)·2K+

In light of the important recent synthesis of a stable tetrasilacyclobutadiene dianion compound by Sekiguchi and co-workers and the absence of theoretical studies, ab initio methods have been used to investigate this dianion and a number of related species. These theoretical methods predict multiple minima for each compound, and most minima contain folded and bicyclic silicon rings. For (Si(4)H(4))(2-), (Si(4)H(4))(2-)·2Li(+), [Si(4)(SiH(3))(4)](2-)·2Li(+), [Si(4)(SiH(3))(4)](2-)·2Na(+), and [Si(4)(SiH(3))(4)](2-)·2K(+), respectively, the energetically lowest-lying structures are designated A-3 (C(2v) symmetry), B-8 (C(1) symmetry), C-1 (C(2) symmetry), D-1 (C(2) symmetry), and E-1 (C(2h) symmetry). None of these structures satisfies both the ring planarity and the cyclic bond equalization criteria of aromaticity. However, all of the representative NICS values of these lowest-lying structures are negative, indicating some aromatic character. Especially, structures C-1 and D-1 of C(2) symmetry effectively satisfy the criteria of aromaticity due to the slightly trapezoidal silicon rings, which are nearly planar with nearly equal bond lengths. SiH(3) substitution for hydrogen in (Si(4)H(4))(2-)·2Li(+) significantly reduces the degree of aromaticity, as reflected in the substantially smaller NICS absolute values for [Si(4)(SiH(3))(4)](2-)·2Li(+) than those of (Si(4)H(4))(2-) and (Si(4)H(4))(2-)·2Li(+). The aromaticity is further weakened in [Si(4)(SiH(3))(4)](2-)·2Na(+) and [Si(4)(SiH(3))(4)](2-)·2K(+) by replacing lithium with the sodium and potassium cations.     

Nonradical mechanisms for the uncatalyzed thermal functionalization of silicon surfaces by alkenes and alkynes: a density functional study

We propose a new concerted mechanism for the uncatalyzed hydrosilylation of terminal alkenes and alkynes, alternative to the conventional radical-based mechanism. Density functional calculations have been carried out on these and on previously proposed alternative mechanisms for the hydrosilylation of ethylene and acetylene by suitable finite size clusters as models of the thermal functionalization of -SiH3, =SiH2, and [triple bound] SiH groups in flat Si(100) and Si(111) and porous silicon surfaces by alkenes and alkynes. For each step involved in the considered hydrosilylation pathways, we optimized the geometries of reactants and products and located the corresponding transition states. The calculated activation energies for the concerted pathways of ethylene and acetylene are, respectively, 57.6 and 60.9 kcal mol(-1) on -SiH3 and in the ranges 62-63 and 58-61 kcal mol-1 on =SiH2 and 64-66 and 56-61 kcal mol(-1) on SiH. These values are much lower than the activation energies calculated for the corresponding homolytic dissociation of the Si-H bond, which is the preliminary step in the radical path, 85.6, 82-83, and 79-81 kcal mol(-1), respectively, for -SiH3, =SiH2, and [triple bound] SiH groups. Our results thus suggest that the thermal hydrosilylation of alkenes and alkynes on silicon surfaces, for which a radical-based mechanism is currently accepted, may occur through a concerted mechanism.