Dependence of the structure and nagnetic properties of FeTaN films on nitrogen concentration

The structural morphology and magnetic properties of thin FeTaN films with a high Ta content (10 wt %) prepared by annealing compounds deposited by reactive rf magnetron sputtering in an Ar + N gas mixture are studied. The dependence of the properties of FeTaN films on their nitrogen content and annealing temperature were established. The deposition and thermal treatment regimes favoring the preparation of thin nanostructural FeTaN films with high soft magnetic characteristics [B _s = 1.6 T, H _c = 0.2 Oe, and μ₁ (1 MHz) = 3400] were determined.     

Metastable phases in YBCO films created by short-term annealings

The effect of short-term low-temperature annealing in air and in vacuum on the properties of HTSC films of YBCO is studied. It is shown that, under certain conditions of preparation of initial samples, a transition from the HTSC phase with the superconducting transition temperature T_c=90 K to a phase with T_c=60 K occurs without a noticeable change in the oxygen content. It is found that, as a result of short-term annealings, a transition from the HTSC phase with T_c=60 K to the phase with T_c=90 K can occur only through the vacuum annealing stage, which converts the sample into the superconducting state. Short-term annealings lead to multiple reversible “switching” of the films from one phase to another. The obtained results are of practical interest, since the proposed method can be used to quickly obtain superconducting YBCO films in various phase states. It is shown, in addition, that the annealing procedure makes it possible not only to increase the oxygen concentration but also to produce a structural rearrangement of a YBCO film.     

蓝宝石基片上制备大面积Tl2Ba2CaCu2O8超导薄膜

在2英寸双面蓝宝石基片上采用CeO₂作为缓冲层制备了高质量Tl₂Ba₂CaCu₂O₈(Tl-2212)超导薄膜.以金属铈作为溅射靶材,采用射频磁控反应溅射法生长了c轴织构的CeO₂缓冲薄膜,并研究了不同生长条件对于CeO₂缓冲层的晶体结构及表面形貌的影响.超导薄膜采用直流磁控溅射和后热处理的方法制备.扫描电子显微镜(SEM)图像显示,超     

Formation of textured Ni(200) and Ni(111) films by magnetron sputtering

The effect of the working gas pressure (P ≈ 1.33–0.09 Pa) and the substrate temperature (T_s ≈ 77–550 K) on the texture and the microstructure of nickel films deposited by magnetron sputtering onto SiO₂/Si substrates is studied. Ni(200) films with a transition type of microstructure are shown to form at growth parameters P ≈ 0.13–0.09 Pa and T_s ≈ 300–550 K, which ensure a high migration ability of nickel adatoms on a substrate. This transition type is characterized by a change of the film structure from quasi-homogeneous to quasi-columnar when a film reaches a critical thickness. Ni(111) films with a columnar microstructure and high porosity form at a low migration ability, which takes place at P ≈ 1.33–0.3 Pa or upon cooling a substrate to T_s ≈ 77 K.     

Novel superconducting niobium beryllide Nb<Subscript>3</Subscript>Be with A15 structure

New niobium beryllide Nb₃Be with A15 structure and lattice parameter a=0.5187±0.0007 nm, coexisting (3–5%) with a tetragonal phase, presumably, of an ordered solid solution with parameters a=0.5414±0.0008 nm and c=0.6378±0.0009 nm, was synthesized by thermal treatment (875–110°C) of amorphous film coatings containing 26.8–32.4 at. % Be and formed from short-period Nb and Be layers by magnetron sputtering. The domain of existence of the Nb₃Be phase and the critical superconducting transition temperature (10.0 K and a transition width of 2.5 K) were determined and the X-ray structural data for structure identification were obtained.     

Deposition of smooth high-<Emphasis Type="Italic">T</Emphasis><Subscript>c</Subscript> superconducting films with a solid-state YAG: Nd<Superscript>3+</Superscript> laser

A method is presented for the deposition of smooth epitaxial high-T _c superconducting films using a pulsed infrared YAG: Nd³⁺ laser and velocity filtration. This method is based on the removal of drops and solid particles from the flow of deposited substance with a fast shutter made of a rotating disk. The deposited smooth homogeneous YBa₂Cu₃O_7?δ films have a critical temperature T _c > 90 K. The surface concentration of drops is less than 3 × 10² cm^?2, and their amount is decreased by more than six orders of magnitude.     

Dielectric properties of lead zirconate titanate films synthesized through oxidation of metal layers

Films of the composition Pb(Zr _x Ti_1?x )O₃ are prepared by magnetron sputtering of metal layers onto titanium substrates with subsequent heat treatment in an oxygen atmosphere. The electrical properties of the samples prepared are investigated using impedance spectroscopy in the frequency range from 10² to 5 × 10⁵ Hz at temperatures of 300–750 K. The temperature dependences of the permittivity and the dielectric loss tangent at different frequencies exhibit a behavior typical of ferroelectrics and indicate the occurrence of a ferroelectric phase transition at temperatures close to T = 663 K. Analysis of the imaginary part of the electric modulus has revealed two possible relaxation mechanisms. The activation energy for dc electrical conduction in the paraelectric phase is determined.     

Superconducting Properties of Indium Nanostructured in Pores of Thin Films of SiO<Subscript>2</Subscript> Microspheres

Samples of a superconducting indium nanocomposite based on a thin-film porous dielectric matrix prepared by the Langmuir–Blodgett method are obtained for the first time, and their low-temperature electrophysical and magnetic properties are studied. Films with thickness b ≤ 5 μm were made from silicon dioxide spheres with diameter D = 200 and 250 nm; indium was introduced into the pores of the films from the melt at a pressure of P ≤ 5 kbar. Thus, a three-dimensional weakly ordered structure of indium nanogranules was created in the pores, forming a continuous current-conducting grid. Measurements of the temperature and magnetic field dependences of the resistance and magnetic moment of the samples showed an increase in the critical parameters of the superconductivity state of nanostructured indium (critical temperature T_c ≤ 3.62 K and critical magnetic field H_c at T = 0 K H_c(0) ≤ 1700 Oe) with respect to the massive material (T_c = 3.41 K, H_c(0) = 280 Oe). In the dependence of the resistance on temperature and the magnetic field, a step transition to the superconductivity state associated with the nanocomposite structure was observed. A pronounced hysteresis M(H) is observed in the dependence of the magnetic moment M of the nanocomposite on the magnetic field at T < T_c, caused by the multiply connected structure of the current-conducting indium grid. The results obtained are interpreted taking into account the dimensional dependence of the superconducting characteristics of the nanocomposite.     

Mechanism of carrier generation and the origin of the pseudogap and 60 K phases in YBCO

The mechanism of hole carrier generation is considered in the framework of a model assuming the formation of negative U centers (NUCs) in HTSC materials under doping. The calculated dependences of carrier concentration on the doping level and temperature are in quantitative agreement with experiment. An explanation is proposed for the pseudogap and 60 K phases in YBa₂Cu₃O_6+δ. It is assumed that a pseudogap is of superconducting origin and arises at temperature T* > T_c∞ > T_c in small nonpercolating clusters as a result of strong fluctuations in the occupancy of NUCs (T_c∞ and T_c are the superconducting transition temperatures of an infinitely large and finite NUC clusters, respectively). The T*(δ) and T_c(δ) dependences calculated for YBa₂Cu₃O_6+δ correlate with experimental dependences. In accordance with the model, the region between T*(δ) and T_c(δ) is the range of fluctuations in which finite nonpercolation clusters fluctuate between the superconducting and normal states due to NUC occupancy fluctuations.     

Magnetic properties of arrays of cobalt nanoparticles on the CaF<Subscript>2</Subscript>(110)/Si(001) surface

The Co/CaF₂/Si(001) heterostructures with the corrugated (110) surface of the CaF₂ buffer layer have been grown by molecular beam epitaxy. The structures are nanoparticle arrays of single-crystal Co, mostly of the cubic fcc modification. The behavior of the magnetic hysteresis loops as a function of the density of coverage of the substrate by cobalt islands, the island size, and the temperature is studied using the magnetooptical technique. At low coverage densities, where the effective cobalt film thickness d _eff is less than the critical value d _eff ^c , the magnetic structure of the films at T = 294 K can be visualized as an ensemble of superparamagnetic, weakly interacting nanoparticles and is characterized by small values of the coercive field H _c and the remanent magnetization M _rem. A decrease in the temperature leads to a strong increase in H _c and M _rem, which is associated with the transition of the islands to the blocked state. The blocking temperature of the structures is T _b ～ 280 K. The magnetic anisotropy parameter K and the saturation magnetization M _s of the islands depend on the growth temperature of cobalt T _Co. An increase in the coverage density above the critical thickness d _iff ^c at T = 294 K brings about a strong increase in H _c and M _rem and the appearance of a hysteresis loop anisotropy originating from the corrugated structure of the CaF₂ buffer layer. The experimental results are compared with the model of an ensemble of noninteracting superparamagnetic particles.     

Deposition of NiFe(200) and NiFe(111) textured films onto Si/SiO<Subscript>2</Subscript> substrates by DC magnetron sputtering

The effect of substrate temperature T_sub and bias voltage U_bias on the texture of NiFe films with thickness d ～ 30–340 nm deposited by DC magnetron sputtering onto Si(111)/SiO₂ substrates under working gas pressure ～ 0.2 Pa has been investigated. It has been demonstrated that films grown at room substrate temperature have the (111) texture that is refined under a negative bias voltage. The deposition of films onto a grounded (U_bias ～ 0) substrate heated to T_sub ～ 440–640 K results in the formation of textured NiFe(200) films.     

New superconductor with a layered crystal structure: Nickel oxybismuthide LaO<Subscript>1−δ</Subscript>NiBi

The results of synthesizing a new layered phase—nickel oxybismuthide LaO_1?δNiBi in a series of superconducting oxypnictides—and its properties in the superconducting and normal states are reported. Although the temperature of the transition of this phase to the superconducting state, T _c ～ 4 K, is much lower than the value T _c = 55 K reached at present in oxyarsenide SmO_1?δFeAs, the similarity of the crystal structures and ρ(T) dependencies indicates that the mechanism responsible for the appearance of the semiconducting state is the same in lanthane oxybismuthide and samarium oxyarsenide.     

Effect of bias voltage polarity of a substrate on the texture,microstructure, and magnetic properties of Ni films prepared by magnetron sputtering

The influence of the bias voltage polarity U_s on microstructure, crystallographic texture and magnetic properties has been investigated for Ni films with a thickness of ≈15–420 nm, which are obtained via magnetron sputtering at a working gas pressure P corresponding to the collision-deficient flight mode of atoms of the sputtered target between the target and the substrate. The Ni(111)-textured films have been shown to form at U_s ≈–100 V, whose microstructure and magnetic parameters are almost unchanged with a thickness. In contrast, the Ni(200) films are formed at U_s ≈ +100 V, whose magnetic properties and micro-structure depend significantly on the thickness d that manifests in a critical thickness d* ≈ 150 nm, when the structure of the film becomes inhomogeneous in the thickness, the remagnetization loops are changed from rectangular to supercritical with the formation of the band domain structure.     

Superconductor-insulator transition tuned by annealing in Bi-film on top of Co-clusters

We deposited amorphous Bi films with a thickness between 3 and 6.5 nm at 4.2 K on top of previously deposited Co clusters having a mean size of ～4.5 nm. The Co cluster layers thickness was between 2.3 and 5 nm. In-situ electrical transport measurements were performed between 2 and 100 K. Measurements on as-prepared samples having a Bi layer thickness of 3.0 nm show hopping (tunneling) conductivity as σ(T) = σ ₀ exp[?(T ₀/T)^1/2] above the superconducting transition temperature T _C and re-entrance behavior again with hopping (tunneling) conductivity below T _C . Annealing of films having a Bi layer thickness of 5.5 nm results in a decrease of resistivity, with variable-range hopping conduction behavior as σ(T) = σ ₀ exp[?(T ₀/T)^1/3 ]. Quite different are the findings for films having a Bi layer thickness of 6.5 nm: annealing of these films results in a power-law behavior as σ(T) = σ ₀ T ^α with α = 2/3, indicating that these films are close to a quantum critical point separating superconducting and insulating phases. A phase diagram including all experimental observations is proposed.     

Die Übergangstemperatur der Supraleitung verschiedener Metalle unter dem Einfluß sehr dünner Oxydschichten

The superconducting transition of thin films of Al, In, Tl, Pb, Sn, and Ga⁺ is investigated by resistance measurements before and after the low temperature oxidation of the surface. The films are condensed onto a crystalline quartz plate to a thickness of about 100 Å or less at a temperature of mostly 105 °K. The oxidation process below 40 °K was described in a previous paper. After a theory ofMott, it may be understood by the tunneling of electrons from the metal to some acceptor levels of the oxygen molecules at the outside of the oxide layer. This way, a strong electric field arises which, on the one hand, facilitates the motion of metal ions outwards to form oxide molecules and, on the other hand, is suspected to affect the transition temperature. The experimental results show a shift of the transition to higher temperatures with the metals Al, In, and Tl, however, with the metals Sn, Pb, and Ga⁺ to lower temperatures. These results agree qualitatively very well with direct measurements of the influence of surface charges on the superconducting transition of Sn and In byGlover andSherrill. TheT _c -shift depends clearly upon the film thickness and amounts to about 0.3 to 0.4 °K for the thinnest films used. Some experiments are undertaken in order to prove the existence of the electric field. Removing the residual oxygen molecules on top of the oxide layer destroys the acceptor levels and causes a reduction of the transition temperature to the value observed with the oxygen free film. As expected, the thickness of the oxide layer is not important for the magnitude of theT _c shift.     

Electrical and Magnetic Properties of Pb and In Nanofilaments in Asbestos near the Superconducting Transition

Bulk nanocomposites based on superconducting metals Pb and In embedded into matrices of natural chrysotile asbestos with the nanotube internal diameter d ~ 6 nm have been fabricated and studied. The low-temperature electrical and magnetic properties of the nanocomposites demonstrate the superconducting transition with the transition critical temperature T_c ≈ (7.18 ± 0.02) K for the Pb–asbestos nanocomposite (this temperature is close to T_{c bulk} = 7.196 K for bulk Pb). The electrical measurements show that In nanofilaments in asbestos have T_c ~ 3.5–3.6 K that is higher than T_{c bulk} = 3.41 K for bulk In. It is shown that the temperature smearing of the superconducting transition in the temperature dependences of the resistance R(T) ΔT ≈ 0.06 K for the Pb–asbestos and ΔT ≈ 1.8 K for the In–asbestos are adequately described by the fluctuation Aslamazov–Larkin and Langer–Ambegaokar theories. The resistive measurements show that the critical magnetic fields of the nanofilaments extrapolated to T = 0 K are H_c(0) ~ 47 kOe for Pb in asbestos and H_c(0) ~ 1.5 kOe for In in asbestos; these values are significantly higher than the values for the bulk materials (H\(H_{\rm{c}}^{\rm{bulk}}\) = 803 Oe for Pb and \(H_{\rm{c}}^{\rm{bulk}}\) = 285 Oe for In). The results of the electrical measurements for Pb?asbestos and In–asbestos agree with the data for the magnetic-field dependences of the magnetic moment in these nanocomposites.     

Low-temperature anomalies in the specific heat and thermal conductivity of MgB<Subscript>2</Subscript>

The temperature dependences of the specific heat C(T) and thermal conductivity K(T) of MgB₂ were measured at low temperatures and in the neighborhood of T _c . In addition to the well-known superconducting transition at T _c ≈40 K, this compound was found to exhibit anomalous behavior of both the specific heat and thermal conductivity at lower temperatures, T≈10–12 K. Note that the anomalous behavior of C(T) and K(T) is observed in the same temperature region where MgB₂ was found to undergo negative thermal expansion. All the observed low-temperature anomalies are assigned to the existence in MgB₂ of a second group of carriers and its transition to the superconducting state at T_c2≈10?12 K.     

Thin films of YBaCuO high-temperature superconductor grown in a simplified magnetron sputterer and their microwave application

The physicochemical properties of YBa₂Cu₃O_7?δ high-temperature superconductor exclude designing standard magnetron sputterers and adopting standard film growth conditions that would ensure good and highly reproducible results. A simple and flexible magnetron sputterer making it possible to grow high-quality films (with a critical temperature of 90 K, a critical current density of 4 MA/cm², and a surface resistance of ≤0.5 mΘ at a frequency of 10 GHz and 77 K) is described. The high quality of the films is proved by successfully applying them in a microwave circuit demonstrating an intrinsic Q factor of 58 000 at a frequency of 70 MHz and 77 K, which is higher than the results obtained by other teams of researchers.     

Critical magnetic field of the vortex-free state in NbC thin films and prospects for its observation in MgB<Subscript>2</Subscript>

The critical magnetic fields H _c‖ and H _c2 are measured for thin films of the isotropic superconductor NbC. It is revealed that the critical fields exhibit strong anisotropy due to the vortex-free state of the film in a magnetic field aligned parallel to its surface. The H _c‖/H _c2 ratio at 2 K exceeds 6 and increases with increasing temperature. The dependence H _c‖(T) agrees quantitatively with the concepts of microscopic theory on the vortex-free state of a thin film of a clean superconductor in the temperature range below T _c . As the electron mean free path decreases under irradiation of the film with a low dose of He⁺ ions, the critical field H _c‖ remains unchanged near T _c but increases significantly at lower temperatures. The well-known theoretical models are used to estimate the electronic parameters and thicknesses of MgB₂ films for which the specific features associated with the vortex-free state of the two-gap superconductor can manifest themselves in the temperature dependence of the critical magnetic field H _c‖(T).