Diode-pumped passively mode-locked Nd:YAG laser with 10-W average power in a diffraction-limited beam

We present a passively mode-locked Nd:YAG laser with 10.7-W average output power in a diffraction-limited beam. Stable self-starting mode locking with a pulse duration of 16 ps and a pulse energy of 120 nJ is obtained with a semiconductor saturable-absorber mirror. The laser is directly side pumped with two 20-W diode bars. Single-pass frequency doubling in an external 5-mm-thick KTP crystal yields 3.2-W average power at 532 nm.     

Diode-pumped passively mode-locked Nd:KGd(WO(4))(2) laser with 1-W average output power

Continuous-wave passive mode locking of a diode-pumped Nd:KGd(WO(4))(2) laser is demonstrated. The use of a saturable Bragg reflector as the mode-locking element permits the generation of 6.3-ps pulses, assuming a sech(2) pulse shape. An output power of 1 W was obtained, which corresponds to a slope efficiency of 34.5%.     

Diode-pumped passively mode-locked Nd:CLNGG laser

Passive mode-locking of a diode-pumped Nd:CLNGG laser was demonstrated for the first time to our knowledge. The laser operated at a central wavelength of 1061.2 nm with a maximum average output power of 101 mW. The mode-locked pulses have pulse duration of 2.0 ps, a spectral bandwidth of 1.2 nm and a repetition rate of 88.4 MHz. The mode locking of the laser was enabled by a semiconductor saturable absorber mirror (SESAM).     

Diode-pumped passively mode-locked femtosecond Yb:CTGG laser

A diode-pumped passively mode-locked Yb:CTGG disordered crystal laser has been demonstrated for the first time to our knowledge. With a semiconductor saturable absorber mirror for passive mode locking and two Gires–Tournois interferometer mirrors for dispersion compensation, pulses as short as 389 fs at a repetition rate of 45 MHz were obtained at the central wavelength of 1,037.8 nm. The maximum average power was 420 mW, corresponding to pulse energy of 9.3 nJ and peak power of 24 kW.     

All-fiber passively mode-locked laser oscillator at 1.5 microm with watts-level average output power and high repetition rate

We report on a passively mode-locked all-fiber laser oscillator at 1.5 microm based on heavily doped phosphate-glass active fiber. An active fiber only 20 cm long is sufficient to produce as much as 2.4 W of average output power directly from the oscillator. The width of the mode-locked pulses varies from 8 ps at the lowest output power in the mode-locked state to 44 ps at the highest power. Our picosecond laser oscillator features a high repetition rate of 95 MHz and high peak pulse power of approximately 540 W. The oscillator combines the convenience of all-fiber construction with power performance that was previously achievable only with mode-locked bulk-optic laser oscillators or more complex systems involving fiber amplifiers.     

Diode-pumped passively mode-locked Yb:LSO/SESAM laser

Diode-end-pumped passively mode-locked Yb³⁺:Lu₂SiO₅ (Yb:LSO) lasers both in the picosecond and the femtosecond regimes were demonstrated in this paper. The mode-locked lasers were initiated by using of semiconductor saturable absorber mirrors (SESAM). In the absence of intra-prisms for pulse compression, the laser emitted 1.6 W of output power with pulses width of about 4.3 ps. A pair of SF10 prisms was inserted into the laser cavity, pulses as short as 699 fs was generated around a center wavelength of 1043.6 nm with an average output power of 800 mW and a peak power of 11.0 kW.     

Diode-pumped passively mode-locked Nd:CTGG disordered crystal laser

A diode-pumped passively mode-locked Nd: CTGG disordered crystal laser has been experimentally demonstrated for the first time to our knowledge. Mode locked with a semiconductor saturable absorber mirror, the laser generated 5.2 ps pulses at a repetition rate of 88 MHz. After intracavity dispersion compensation, the mode-locked pulses were shortened to 4.3 ps. Multiple emission wavelengths of the Nd:CTGG laser could be synchronously mode locked under dispersion compensation.     

Diode-pumped passively mode-locked sub-picosecond Yb:LuAG ceramic laser

In this paper the laser activities of a diode-pumped Yb:LuAG ceramic which was prepared by the solid-state reactive sintering method were reported. The maximum output power was 1.86 W in the continuous wave(CW) laser operation,corresponding to a slope efficiency of 53.6%. The CW laser could be tuned from 1030 to 1096 nm by inserting a prism in the cavity. With the assist of a semiconductor saturable absorber mirror(SESAM), passive mode-locking was realized,delivering sub-picosecond pulses with 933 fs duration and an average power of 532 m W at a repetition rate of 90.35 MHz.     

Diode-pumped passively Q-switched Nd:YAG/SrWO4 intracavity Raman laser with high pulse energy and average output power

A diode-pumped passively Q-switched Nd:YAG/SrWO₄ intracavity Raman laser is presented. As high as 1.78?W average power is obtained at an incident pump power of 14.9?W with a pulse repetition frequency of 21.2?kHz. The highest pulse energy is 88.1???J obtained at a pump power of 13.7?W. The obtained pulse energy and average power are much higher than those of the previously reported diode-pumped passively Q-switched intracavity Raman lasers.     

Theory of passively mode-locked cw dye lasers

The circulation of an ultrashort light pulse in a continuously pumped modelocked dye laser with a linear cavity configuration containing the active dye, the saturable absorber and a bandwidth-limiting elements is treated. The steady-state condition that the pulse shape reproduces after each cavity round-trip leads to a nonlinear integro-differential equation for this pulse shape. An approximate method for the solution of this equation not limited to the case of low laser gain and small pulse energies is given. The stable single pulse region and characteristic pulse parameters, as energy, duration, intensity and asymmetry, are considered in dependence on the laser parameters.     

Picosecond pulses from passively mode-locked dye lasers

Successive stages of the development of ultrashort pulses in passively mode-locked dye lasers are studied. It is numerically shown that the initial fluctuations evolve into a picosecond pulse which retains its magnitude and particular shape and moves slower than the speed of light.     

Towards wafer-scale integration of high repetition rate passively mode-locked surface-emitting semiconductor lasers

One of the most application-relevant milestones that remain to be achieved in the field of passively mode-locked surface-emitting semiconductor lasers is the integration of the semiconductor absorber into the gain structure, enabling the realization of ultra-compact high-repetition-rate laser devices suitable for wafer-scale integration. We have recently succeeded in fabricating the key element in this concept, a quantum-dot-based saturable absorber with a very low saturation fluence, which for the first time allows stable mode locking of surface-emitting semiconductor lasers with the same mode areas on gain and absorber. Experimental results at high repetition rates of up to 30 GHz are shown. PACS 42.55.Px; 42.60.Fc; 42.82.Gw     

Diode-pumped passively mode-locked Nd:YVO4 laser at 914 nm

We demonstrate, for the first time, to our knowledge, a diode-pumped passively mode-locked Nd:YVO4 laser, operating on the 4F(3/2)-4I(9/2) transition of the neodymium ion at 914 nm. We obtained 8.8 ps pulses at approximately 914 nm at a repetition rate of 94 MHz, and an averaged output power of 87 mW by using a semiconductor saturable absorber mirror.     

Anticolliding design for monolithic passively mode-locked semiconductor lasers

The performance of two-section, passively mode-locked semiconductor lasers is theoretically analyzed for different cavity designs. Placing the saturable absorber section close to an antireflection-coated facet leads to a substantial increase in output power and a reduction in amplitude and timing jitter. Moreover, it broadens the bias current region of stable passive mode-locking operation.     

Diode-pumped passively Q-switched mode-locked Nd:YLF laser with uncoated GaAs saturable absorber

We have demonstrated passively Q-switched mode-locked all-solid-state Nd:YLF laser with an uncoated GaAs wafer as saturable absorber and output mirror simultaneously. Q-switched mode-locking pulses laser with about 100% modulation depth were obtained. The average output power is 890 mW at the incident pump power of 5.76 W, corresponding to an optical slop efficiency of 20%. The temporal duration of mode-locked pulses was about 21 ps. At the Q-switched repetition rate of 30 kHz, the energy and peak power of a single pulse near the maximum of the Q-switched envelope was estimated to be about 1.6 μJ and 76 kW.     

High-power diode-pumped passively mode-locked Yb:YAG lasers

We obtained 74-kW peak power and 3.5-W average output power in 1-ps pulses from a diode-pumped Yb:YAG laser at 1030 nm that was passively mode locked with a semiconductor saturable-absorber mirror. Another laser produced 57-kW peak power and as much as 8.1-W average output power in 2.2-ps pulses, split into two nearly diffraction-limited beams (M(2)<1.2) . To our knowledge, these are by far the highest reported peak and average output powers from a diode-pumped mode-locked laser in this pulse-duration regime.     

Diode-pumped passively mode-locked and passively stabilized Nd3+:BaY2F8 laser

Continuous-wave mode locking (CW-ML) of a diode-pumped Nd3+:BaY2F8 laser is reported for the first time to our knowledge. Pulses as short as 4.8 ps were measured with a total output power of approximately 1 W at 1049 nm, corresponding to 3.4 W of absorbed power from the pump diode at 806 nm. A novel technique for passive stabilization of CW-ML has been demonstrated.     

被动锁模光纤激光器多孤子脉冲形成机理

基于非线性耦合薛定谔方程,在非线性偏振技术锁模的掺铒环形光纤激光器中,理论研究多孤子脉冲的形成和演化规律。研究结果表明:随着小信号增益不断增加,光纤激光器的锁模透过率函数影响多脉冲输出,多脉冲产生受色散波和脉冲分裂形成的峰值功率的限制效应和孤子能量量子化的影响,这是增益竞争和非线性偏振旋转引起的损耗之间动态平衡的最终结果。     

被动锁模光纤激光器多孤子脉冲形成机理

基于非线性耦合薛定谔方程,在非线性偏振技术锁模的掺铒环形光纤激光器中,理论研究多孤子脉冲的形成和演化规律。研究结果表明：随着小信号增益不断增加,光纤激光器的锁模透过率函数影响多脉冲输出,多脉冲产生受色散波和脉冲分裂形成的峰值功率的限制效应和孤子能量量子化的影响,这是增益竞争和非线性偏振旋转引起的损耗之间动态平衡的最终结果。     

Soliton-like pulse-shaping mechanism in passively mode-locked surface-emitting semiconductor lasers

We discuss a mechanism that allows the formation of nearly transform-limited soliton-like pulses in passively mode-locked optically pumped external-cavity surface-emitting semiconductor lasers. It involves the interplay of positive dispersion and the nonlinear index changes in gain medium and saturable absorber, while ordinary solitons are based on dispersion and the Kerr effect. The obtained quasi-soliton pulses share some of the properties of ordinary solitons (in particular, their stability and near bandwidth-limited nature), while other properties are different. In particular, the pulse duration scales with the square root of the cavity dispersion, and an excessive drift of the laser wavelength must be avoided by proper design. Received: 23 April 2002 / Published online: 25 September 2002 RID="*" ID="*"Corresponding author. Fax: +41-1/633-1059, E-mail: Paschotta@iqe.phys.ethz.ch