Remotely-doped graded potential well structures

We present a new method to obtain high-mobility three-dimensional electron gas systems. We have achieved control of carrier density and of carrier profile by growth of the first remotely-doped parabolic potential well structures. Computer-controlled molecular beam epitaxy is used to grow a layer of ultra-fine superlattices with a programmable composition gradient. This produces conduction-band potentials which, in the absence of doping, are equivalent to the potential profiles of fixed charge distributions. When conduction electrons are introduced into these graded wells through remote doping of the barrier regions, they distribute themselves in such a way as to produce a uniform chemical potential at thermal equilibrium. We illustrate through computer simulations employing Fermi statistics that electrons introduced into a wide parabolic potential well distribute themselves uniformly. More significantly, the carrier distribution in the well is remarkably insensitive to the dopant sheet charge in the barrier, the more so at lower temperatures. We have fabricated remotely-doped graded potential well structures of the proposed type by molecular beam epitaxy. These structures exhibit the above effects. Measured mobilities of such three-dimensional electron gases grown using the GaAs/Al_xGa_1−xAs system are higher than those of bulk-doped GaAs doped to give the same uniform electron concentration.     

Reasons of emission inhomogeneity in InAs quantum dot structures

The photoluminescence (PL) inhomogeneity has been studied in InAs quantum dots (QDs) embedded in the symmetric In_0.15Ga_0.85As/GaAs quantum wells (QWs) with QDs grown at different temperatures. It was shown that three reasons are responsible for the emission inhomogeneity in studied QD structures: (i) the high concentration of nonradiative recombination centers in the capping In_0.15Ga_0.85As layer at low QD growth temperatures, (ii) the QD density and size distributions for the structure with QD grown at 510 ^°C, (iii) the high concentration of nonradiative recombination centers in the GaAs barrier at higher QD growth temperatures.     

Effects of Coulomb interaction in intentionally disordered semiconductor superlattices

The interplay between disorder and electron–electron interaction is studied using measurements of the vertical dc conductivity of intentionally disordered GaAs/Al_0.3Ga_0.7As superlattices. At low temperatures a quasimetallic behavior is observed even for large disorder which is attributed to an inhomogeneous charge distribution reducing the disorder potential. At low doping levels and low temperatures, exchange–correlation interaction leads to an inhomogeneous charge distribution over the wells of ordered superlattices similar to a one-dimensional Wigner lattice.     

Light scattering in GaAs parabolic quantum wells

We report the observation of electronic light scattering in photoexcited parabolic GaAsAl_xGa_1-xAs quantum wells. The spectra show sharp peaks corresponding to transitions between sublevels in the conduction band. The precision of the measurements allows a test of the simple harmonic oscillator model for the energy level structure. The energy gap and alloy composition of the Al_xGa_1-xAs layers are determined from resonance Raman scattering by optical phonons. We use these results to calculate the conduction band offset Q_e. We obtain Q_e ∼ 0.7, in agreement with recent experiments in square quantum wells.     

Polaron effects on excitons in parabolic quantum wells: fractional-dimension variational approach

Polaron effects on excitons in parabolic quantum wells are studied theoretically by using a variational approach with the so-called fractional dimension model. The numerical results for the exciton binding energies and longitudinal-optical phonon contributions in GaAs/Al_0.3Ga_0.7As parabolic quantum well structures are obtained as functions of the well width. It is shown that the exciton binding energies are obviously reduced by the electron (hole)-phonon interaction and the polaron effects are un-negligible. The results demonstrate that the fractional-dimension variational theory is effectual in the investigations of excitonic polaron problems in parabolic quantum wells.     

Electronic superstructures in doped superlattices

Using an approach based on the density functional, we show that the exchange-correlation contribution to the system energy can be bigger than the sum of the kinetic energy and the Hartree contribution due to redistribution of carriers over the quantum wells in doped composite superlattices at low temperatures and moderate impurity densities. As a result, the ground state of the system can correspond to an inhomogeneous electron distribution over the quantum wells. Conditions when the homogeneous state is stable against small and finite density fluctuations are determined, and a phase diagram is plotted. A nonlinear theory of the inhomogeneous state is considered. Zh. éksp. Teor. Fiz. 114, 1089–1100 (September 1998)     

Magneto-optical studies of GainAsInP quantum wells

The optical properties of GainAsInP quantum wells are studied in magnetic fields of up to 16T. A comparison of the absorption and photoluminescence spectra of a series of multiple quantum wells provides evidence that the photoluminescence occurs from excitons in which the hole is localised. This localisation is shown to be present in a highly doped sample with a sheet carrier density of ∼10¹² cm⁻², indicating that the localisation is not screened out by high free carrier densities. A theoretical fit to measured Landau level transitions in a 100Å multiple quantum well allows values for the carrier masses, electron non-parabolicity and exciton binding energy to be determined.     

Resonant tunneling in weakly coupled GaAs/AlGaAs superlattices in a transverse magnetic field: A probe of electronic distribution function

A method is proposed to get information about carrier distribution function in superlattices and multiple quantum-well structures from the analysis of the vertical transport experiments in a transverse magnetic field. The method was applied to the GaAs/AlGaAs superlattices with wide quantum wells in strong (B=0–7 T) magnetic fields. It was shown that the distribution function of electron is nonequilibrium Boltzmann-like, with electronic temperature T=10–20 K.     

Low temperature subband 2D electron mobilities in heavy delta- and modulation doped GaAs/GaAlAs heterostructures

We synthesised high-2D electron-density GaGs/GaAlAs heterostructures with different distance L_σ of Si delta-layer in GaAs from the heterojunction and uniform doped GaAlAs. The quantum Hall effect and Shubnikov-de Haas effect were measured for temperatures down to 0.4 K in magnetic fields up to 40 T. The enhanced 2D electron concentration achieved was 1.1^*10¹³ cm^?2 in six filled subbands. The Hall mobility depends on L_σ and has maximum for L_σ=600÷750Å. From the amplitudes of the SdH oscillations and Fourier transforms the subband mobilities and electron concentration in each subband have been extracted. According to calculations intersubband electron scattering appears to be important and reduces mobilities in subbands.     

加偏置电场的抛物量子阱中的电光效应

本文利用密度矩阵方法得到了加偏置电场的抛物量子阱中电光效应的解析表达式,并以典型的GaAs抛物量子阱为例进行了数值计算研究结果表明,电光效应随偏置电场和抛物势频率的增大而增强,同时也表明GaAs量子阱中的电光效应比体GaAs中的要强一个数量级以上。     

Hydrostatic pressure dependence of negative-donor-ion singlet and singlet-like bound magnetoplasmon transitions in doped GaAs/AlGaAs quantum wells

Applied hydrostatic pressure modifies the Coulomb bound states of a quasi-two-dimensional electron gas in quantum wells by increasing the effective mass and by tuning the free electron density. Here, we explore these mechanisms by measuring the effects of pressure on the cyclotron resonance, the D⁰ 1s → 2p⁺ transition, and the D⁻-singlet and singlet-like transitions in low-and high-density, modulation-doped GaAs quantum wells. For low doping density, detailed calculations employing a pressure-dependent electron mass agree well with the observed magnetic field and pressure dependencies. For high doping density and low fields, the blue-shift of the D⁻-singlet-like transition at fields below 8 T decreases with applied pressure as anticipated, due to loss of free electrons via the Γ–X crossover. However, near 7.5 T, this singlet-like transition exhibits an anomalous branching for pressures above 4 kbar, which indicates the presence of a resonant level and obscures the blue-shift at high fields.     

Classical and quantum hall effect measurements in GaInNAs/GaAs quantum wells

We have performed magneto-transport experiments in modulation-doped Ga_0.7In_0.3N_yAs_1−y/GaAs quantum wells with nitrogen mole fractions 0.4%, 1.0% and 1.5%. Classical magnetotransport (resistivity and low-field Hall effect) measurements have been performed in the temperatures between 1.8 and 275 K, while quantum Hall effect measurements in the temperatures between 1.8 and 47 K and magnetic fields up to 11 T.The variations of Hall mobility and Hall carrier density with nitrogen mole fractions and temperature have been obtained from the classical magnetotransport measurements. The results are used to investigate the scattering mechanisms of electrons in the modulation-doped Ga_0.7In_0.3N_yAs_1−y/GaAs quantum wells. It is shown that the alloy disorder scattering is the major scattering mechanism at investigated temperatures.The quantum oscillations in Hall resistance have been used to determine the carrier density, effective mass, transport mobility, quantum mobility and Fermi energy of two-dimensional (2D) electrons in the modulation-doped Ga_0.7In_0.3N_yAs_1−y/GaAs quantum wells. The carrier density, in-plane effective mass and Fermi energy of the 2D electrons increases when the nitrogen mole fraction is increased from y=0.004 to 0.015. The results found for these parameters are in good agreement with those determined from the Shubnikov-de Haas effect in magnetoresistance.     

Transport relaxation time and quantum lifetime in selectively doped GaAs/AlAs heterostructures

Low-temperature dependences of the transport relaxation time (τ_tr) and quantum lifetime (τ_q) on the density of the two-dimensional electron gas (n _e ) in GaAs quantum wells with AlAs/GaAs lateral superlattice barriers have been studied. An exponential increase in the quantum lifetime with increasing electron density has been observed. It has been shown that the sharp increase in the quantum lifetime correlates with the appearance of X electrons in the AlAs/GaAs lateral superlattice barriers. It has been established that the ratio of the transport relaxation time to the quantum lifetime in the studied structures nonmonotonically depends on the density: the ratio τ_tr/τ_q first increases linearly with n _e and then decreases. This behavior is not described by the existing theories.     

Bound excitons in p-doped GaAs quantum wells

Photoluminescence attributed to excitons bound to neutral impurities has been observed from GaAs quantum wells in Al_xGa_1?xAs-GaAs heterostructures grown by molecular beam epitaxy. The quantum wells were either doped with [Be] ≈ 10¹⁷ cm^-3 or Zn-diffused. At low temperatures both single and multiple quantum wells exhibited this extrinsic luminescence which is ascribed to the radiative recombination of the n=1 ground state heavy hole exciton E_1h bound to a neutral acceptor A^o. The dissociation energy E_D of the A^o-E_1h complex is obtained directly from the measured separation of this extrinsic peak from the intrinsic E_1h free exciton peak. For 46Å wide GaAs wells, E_D=6.5meV and E_D decreases with increasing well width.     

Intervalley electron scattering by phonons in (GaAs)<Subscript><Emphasis Type="Italic">m</Emphasis></Subscript>(AlAs)<Subscript><Emphasis Type="Italic">n</Emphasis></Subscript>(001) ultrathin superlattices

The electron scattering by short-wavelength and long-wavelength phonons in (GaAs) _m (AlAs) _n (001) superlattices with ultrathin layers (n, m = 1, 2, 3) has been investigated using the pseudopotential method and the phenomenological model of bonding forces. The deformation potentials have been found for intervalley electron transitions in the conduction bands of the superlattices and solid solutions of the corresponding compositions. It has been shown that, owing to the localization of the wave functions in the quantum wells Γ, L, and X, the intensity of intervalley electron transitions in the superlattices, as a whole, is higher than that of similar transitions in the solid solutions. As the content of light Al atoms in the superlattices increases, the deformation potentials monotonically increase for the X-X transitions and decrease for the L-L and X-L transitions. The potentials of the Γ-X and Γ-L transitions change nonmonotonically depending on the layer thickness due to the pronounced quantum-well effects in the deep Γ quantum wells of GaAs. The deformation potentials averaged over phonons and related valleys in the superlattices are close to the corresponding potentials in the solid solutions.     

Phonon-plasmon interaction in tunneling GaAs/AlAs superlattices

The phonon-plasmon interaction in tunneling GaAs _n /AlAs _m superlattices (m=5and 6≥n≥0.6 monolayers) was studied by Raman scattering spectroscopy. The interaction of optical phonons localized in GaAs and AlAs layers with quasi-three-dimensional plasmons strengthens as the thickness of GaAs quantum wells decreases and the electronic states in the superlattices become delocalized due to tunneling. It is assumed that the plasmons also interact with the TO-like phonon modes localized in quantum islands or in thin ruffled layers.     

Electro-optical phenomena accompanying electron and hole heating in superlattices and quantum wells GaAs/AlGaAs and Ge/GeSi

New electro-optical phenomena in quantum-well structures, i.e. modulation of the light absorption and birefringence due to carrier heating in a strong electric field, have been investigated. The effects have revealed different features in the three types of structures under investigation, namely: (1) well-dopedn-type GaAs/AlGaAs multiple quantum wells, (2) barrier-dopedn-type GaAs/AlGaAs superlattices and (3) barrier-dopedp-type Ge/GeSi multiple quantum wells. Possible mechanisms of the phenomena have been discussed.     

GaAs/AlGaAs多量子阱中载流子动力学的实验研究

利用瞬态光栅激光光谱技术测量了(110)方向生长的本征GaAs/AlGaAs多量子阱的双极扩散系数.室温下,光激发的载流子浓度n_ex=3.4×10¹⁰/cm²时,测得双极扩散系数D_a=13.0 cm²/s,载流子的寿命τ_R=1.9 ns.改变光激发的载流子浓度(n_{ex关键词： 瞬态光栅 量子阱 空穴输运}     

Electronic and transport properties of heterophase compounds based on MoS<Subscript>2</Subscript>

New heterophase superlattices based on MoS₂ are studied in detail by the electron density functional theory. It is shown that the incorporation of the 1Т phase in the 2H-MoS₂ monolayer is responsible for the formation of electronic levels near the Fermi level and quantum wells in the transverse direction of superlattices. The proposed lateral heterophase structures of transition metal dichalcogenides are promising for the construction of new elements of nanoelectronics.     

Improvement of the optical property and uniformity of self-assembled InAs/InGaAs quantum dots by layer-by-layer temperature and substrate rotation

The influence of layer-by-layer temperature and substrate rotation on the optical property and uniformity of self-assembled InAs/In_0.2Ga_0.8As/GaAs quantum dots (QDs) gown with an As₂ source was investigated. An improvement in the optical property of QDs was obtained by the precise control and optimization of growth temperature utilized for each layer, i.e., InAs QDs, InGaAs quantum wells, GaAs barriers and AlGaAs layers, respectively. By using a substrate rotation, the QD density increased from ∼1.4×10¹⁰ to ∼3.2×10¹⁰ cm⁻² and its size also slightly increased, indicating a good quality of QDs. It is found that the use of an appropriate substrate rotation during growth improves the room-temperature (RT) optical property and uniformity of QDs across the wafer. For the QD sample with a substrate rotation of 6 rpm, the RT photoluminescence (PL) intensity is much higher and the standard deviation of RT-PL full-width at half-maximum is decreased by 35% compared to that grown without substrate rotation.