TCAD simulation of tunneling leakage current in CaF2/Si(111) MIS structures

We introduce a simulation technique suitable to model the tunneling leakage current in the metal(polySi)/CaF₂/Si(111) MIS structures using TCAD simulators Minimos-NT and ViennaSHE. The simulations are performed using the real physical parameters of the CaF₂/Si tunnel barrier. The results obtained for the case of near-equilibrium carrier transport are in a good agreement with experimental data and also with the simulation results yielded by our reference physical model. The obtained non-equilibrium hot-electron tunnel leakages in the hypothetical transistors with CaF₂ as a gate dielectric are comparable to those in the structures with silicon dioxide. Being an important step forward for the device application of calcium fluorite, this work opens the possibility of simulating the characteristics of different silicon-based systems with crystalline insulators.     

Oxide thickness measurements up to 120 Å on silicon and aluminum using the chemically shifted auger spectra

Thicknesses of oxides on Si or Al can be determined up to about 120 Å using Auger electron spectroscopy, without ion-mill depth profiling, by using the ratio of the chemically shifted and unshifted peaks from the oxide and substrate, respectively. Measurement standard deviations of ± 1 Å at oxide thickness of 30 Å and spatial resolution < 10 μm are readily attainable. The absolute accuracy of the present calibration is about ± 30% at 30 Å for SiO₂. A comparison of the measured thickness d with ellipsometry revealed a disagreement which was largest at $\text{d(}\text{ellips.}\text{) = 50}\text{A}\text{?}$, where d(Auger) was 33 Å. We propose that most of this disagreement is a consequence of the finite extent of the oxide/Si interface, and the measurement of different physical parameters in the two techniques. It is demonstrated that the milling rate of SiO₂ (within about 100 Å from the SiO₂/Si interface) can be determined from ion-mill depth profiles alone and the position of the interface in the depth profile can be located within serveral Å. The electron mean free path in SiO₂ at 1615 eV was determined to be 31 ± 9 Å.     

Homogeneous Si films on CaF2/Si(1 1 1) due to boron enhanced solid phase epitaxy

The structure and morphology of Si/CaF₂/Si(1 1 1) structures have been investigated by X-ray diffraction (XRD, GIXRD) and X-ray photoelectron spectroscopy (XPS). While CaF₂ films were grown via molecular beam epitaxy (MBE), Si films on CaF₂/Si(1 1 1) are fabricated by surfactant enhanced solid phase epitaxy (SE-SPE). Here Boron was used as a surfactant to obtain semiconductor films of homogeneous thickness. The Si films are entirely relaxed while the CaF₂ films have both pseudomorphic and relaxed crystallites. After exposure to ambient conditions, the Si films have a very thin native oxide film. The homogeneous Si film partially prevents the incorporation of impurities at the interface between the Si substrate and CaF₂ via migration along residual defects of the CaF₂ film.     

Analysis of the sideband fluorescence of Eu2+:CaF2

The vibronic fluorescence of Eu²⁺:CaF₂ at 4130 Å is calculated be treating the associated Jahn-Teller problem in the classical static limit and extracting the usual oscillator shifts in a cluster calculation. A_1g and E_g contributions are separated via the pronounced one-phonon structure. The J-T stabilization energy and the 10Dq value for the 5d electron are estimated to be 600 cm^?1 and 16,000 cm^?1 respectively.     

Features of electronic transport in relaxed Si/Si1−XGeX heterostructures with high doping level

The low-temperature electrical and magnetotransport characteristics of partially relaxed Si/Si_1−xGe_x heterostructures with two-dimensional electron channel (n_e≥10¹² cm⁻²) in an elastically strained silicon layer of nanometer thickness have been studied. The detailed calculation of the potential and of the electrons distribution in layers of the structure was carried out to understand the observed phenomena. The dependence of the tunneling transparency of the barrier separating the 2D and 3D transport channels in the structure, was studied as a function of the doping level, the degree of blurring boundaries, layer thickness, degree of relaxation of elastic stresses in the layers of the structure. Tunnel characteristics of the barrier between the layers were manifested by the appearance of a tunneling component in the current–voltage characteristics of real structures. Instabilities, manifested during the magnetotransport measurements using both weak and strong magnetic fields are explained by the transitions of charge carriers from the two-dimensional into three-dimensional state, due to interlayer tunneling transitions of electrons.     

Formation of defects in the oxide layer of ion-irradiated Si/SiO2 structures

Electroluminescence and high-frequency voltage-capacitance methods are used to study Si/SiO₂ structures obtained by thermal oxidation of KéF-5 (100)Si wafers at 950°C in wet oxygen (oxide thickness 250 nm). The structures are irradiated by 130-keV argon ions with doses in the range of 10¹³−3.2×10¹⁷ cm⁻². A correlation between the origin, properties, and formation mechanism of implantation-induced defects in the oxide layer is established, and a model of defect formation is proposed.     

Ge metal oxide semiconductor field effect transistors with optimized Si cap and HfSiO2 high-k metal gate stacks

High mobility metal-oxide-semiconductor-field-effect-transistors (MOSFETs) are demonstrated on high quality epitaxial Si_0.75Ge_0.25 films selectively grown on Si (100) substrates. With a Si cap processed on Si_0.75Ge_0.25 channels, HfSiO₂ high-k gate dielectrics exhibited low C–V hysteresis (<10 mV), interface trap density (7.5 × 10¹⁰), and gate leakage current (∼10⁻²A/cm² at an EOT of 13.4 Å), which are comparable to gate stack on Si channels. The mobility enhancement afforded intrinsically by the Si_0.75Ge_0.25 channel (60%) is further increased by a Si cap (40%) process, resulting in a combined ∼100% enhancement over Si channels. The Si cap process also mitigates the low potential barrier issues of Si_0.75Ge_0.25 channels, which are major causes of the high off-state current of small band gap energy Si_0.75Ge_0.25 pMOSFETs, by improving gate control over the channel.     

Cohesive energy of zincblende (A<Superscript>III</Superscript>B<Superscript>V</Superscript> and A<Superscript>II</Superscript>B<Superscript>VI</Superscript>) structured solids

In this paper we present an expression relating the cohesive energy (E _coh in kcal/mol) of A^IIIB^V and A^IIB^VI semiconductors with the product of ionic charges (Z ₁ Z ₂) and nearest-neighbour distance d (Å). The cohesive energy values of these solids exhibit a linear relationship when plotted on a log-log scale against the nearest-neighbour distance d (Å), but fall on different straight lines according to the ionic charge product of the solids. A good agreement has been found between the experimental and calculated values of the cohesive energy of A^IIIB^V and A^IIB^VI semiconductors.     

Low temperature ion beam mixing of Co/Si systems

Co/Si systems were ion beam mixed at 77 K using a 100 keV Ar beam. The formation of different phases as a function of irradiation dose has been studied, using Mössbauer spectroscopy (MS) and Rutherford backscattering spectroscopy (RBS). It was found that Co₂Si, CoSi and CoSi₂ are formed subsequently in parallel layers. After high dose irradiation, a phase with stoichiometry Co∶Si equal to 1∶3 was observed, suggesting CoSi₃ has been formed. However, MS gave clear evidence that this phase consists of precipitates of CoSi₂ and Si. Finally, we found that the amount of mixing scales linearly with the square root of the fluence, with a mixing rate of 1.0×10⁴Å⁴.     

Diffusion-promoted-desorption mechanism for D2 desorption from Si(100) surfaces

Temperature-programmed-desorption (TPD) spectra and isothermal desorption rates of D₂ molecules from a Si(100) surface have been calculated to reproduce experimental β_1, A-TPD spectra and isothermal desorption rate curves. In the diffusion-promoted-desorption (DPD) mechanism, hydrogen desorption from the Si(100) (2 × 1) surfaces takes place via D atom diffusion from doubly-occupied Si dimers (DODs) to their adjacent unoccupied Si dimers (UODs). Taking a clustering interaction among DODs into consideration, coverages θ_DU of desorption sites consisting of a pair of a DOD and UOD are evaluated by a Monte Carlo (MC) method. The TPD spectra for the β_1, A peak are obtained by numerically integrating the desorption rate equation R = ν_A exp(? E_d, A / k_BT)θ_DU, where ν_A is the pre-exponential factor and E_d, A is the desorption barrier. The TPD spectra calculated for E_d, A = 1. 6 eV and ν_A = 2.7 × 10⁹ /s are found to be in good agreement with the experimental TPD data for a wide coverage range from 0.01 to 0.74 ML. Namely, the deviation from first-order kinetics observed in the coverage dependent TPD spectra as well as in the isothermal desorption rate curves can be reproduced by the model simulations. This success in reproducing both the experimental TPD data and the very low desorption barrier validates the proposed DPD mechanism.     

Memory element based on Si/CaF<Subscript>2</Subscript> periodic nanostructures

A memory element based on a Si/CaF₂ periodic nanostructure is proposed. In this element, information is recorded through charge capture by trap states in a CaF₂ dielectric. The high and low signal levels correspond to the current in the maximum and minimum of the negative differential resistance region, which forms as a result of the resonant tunnel distribution of charge carriers over trap levels in the dielectric. The speed of such logical elements depends on the rate of activation carrier trapping and the rate of tunnel carrier transfer from one state to another. It is shown that both Si/CaF₂-based logical elements and memory elements proposed operate at temperatures from 77 to 300 K, have a switching time of 10⁻¹²–10⁻¹⁰ s, and are compatible with silicon IC technology.     

Raman spectroscopic analysis of the CaF2Si heterostructure interface

The lattice constants of CaF₂ and Si differ by only 0.6%. In addition, these materials have very similar cubic structures. These similarities suggest that CaF₂Si should form a low stress heterostructure interface. We have used Raman scattering to probe Si at the epitaxial CaF₂Si interface. Measurements of these MBE grown films indicate that there is very little interfacial stress (<0.5 kbars). Comparison is made with Si films grown on sapphire and spinel.     

First principles study on the structural,electronic and phonon properties of monolayer B2Si

Using first principles density functional theory, we predict a monolayer B₂Si structure with space group Pmm2 in the present work. This structure is confirmed to be dynamically stable. Based on the plane wave pseudopotential approach, the charge density, electron localization function, density of states, energy band, phonon property and thermal conductivity of Pmm2-B₂Si are systematically studied. It is interesting that the sp² hybridization and coordination bond of Si are found in Pmm2-B₂Si, which is the most important factor for its structural stability. The density of states and energy band analysis reveals that Pmm2-B₂Si is metallic because of the partial occupied Si 3pz and B 2pz states. Moreover, the acoustic-optical coupling is important for phonon transport in Pmm2-B₂Si, and the contribution of optical modes to the lattice thermal conductivity along the [100] and [010] directions is 13% and 12%, respectively. This study gives a fundamental understanding of the structural, electronic and phonon properties in Pmm2-B₂Si.     

Study of the features of BaF<Subscript>2</Subscript> heteroepitaxy on CaF<Subscript>2</Subscript>/Si(100) layers obtained in the high-temperature growth mode

The surface morphology of BaF₂ epitaxial films grown by MBE (molecular beam epitaxy) in various modes on the surface of CaF₂/Si(100) is investigated by AFM. The CaF₂ layers on Si(100) are obtained in the high-temperature growth mode (Т _S = 750°C). It is shown that the epitaxy of BaF2 at a temperature of 600°C at the initial stage of growth leads to the formation of defects such as perforations in the epitaxial film, while epitaxy at a temperature of 750°C provides a defect-free film with a surface morphology suitable for the subsequent growth of semiconductors of IV–VI type and solid solutions based on them.     

The microwave spectrum,structure, and quadrupole coupling constants of boron chloride difluoride,BCIF2

The microwave spectrum of boron chloride difluoride, BClF₂, has been investigated in the region 26.5–40.0 GHz. R-branch transitions belonging to the isotopic species ¹¹B³⁵Cl¹⁹F₂, ¹¹B³⁷Cl¹⁹F₂, and ¹⁰B³⁵Cl¹⁹F₂ have been observed and the derived rotational constants yield the following ground-state structural parameters: $\text{r}{}^0\text{(BF) = 1.315 ± 0.006}\text{A}\text{?}$, $\text{r}{}^{\mathrm{s}}\text{(BCl) = 1.728 ± 0.009}\text{A}\text{?}$, < FBF = 118.1 ± 0.5°. The ground-state rotational constants of the most abundant species ¹¹B³⁵Cl¹⁹F₂ are: A₀ = 10 449.32 ± 0.13, B₀ = 4705.811 ± 0.020, C₀ = 3239.702 ± 0.026 MHz, Δ_JK = 8.9 ± 1.7, and Δ_J = 1.86 ± 0.48 KHz. The asymmetry parameter κ = ?0.593291 and the inertial defect δ⁰ = 0.2361 amu Ų which is consistent with that expected for this type of molecule if planar. The ³⁵Cl quadrupole coupling constants for ¹¹B³⁵Cl¹⁹F₂ are χ_aa = ?42.8 ± 1.0, χ_bb = 30.2 ± 1.5, χ_cc = 12.6 ± 1.5 MHz with the asymmetry parameter η = 0.41.     

Level-crossing-Experiment zur Untersuchung der Hyperfeinstruktur von Au197 im5d106p2P3/2-Term

The scattering of Au-resonance line λ=2427 Å on an atomic heam was observed in external magnetic field by level crossing technic. Using the assumed interpretationB/A ? 1 for the hyperfinestructure-interaction of Au¹⁹⁷ in the²P_3/2-term a valueB ≈ll mK for the nuclear quadrupol-interaction constant is deduced.     

Light scattering experiments on silver films of different roughness using surface plasmon excitation

Using the ATR-technique surface plasma oscillations are excited in silver films of 600 Å thickness roughened by CaF₂ layers. The angular distribution and the polarization of the intensity of the light scattered into the air half-space have been determined. The roughness spectrum derived from these data can be described in a limited k-region by a Gauss' correlation function. In this way it is possible to calculate the correlation length and the r.m.s. height of the roughness. Varying the CaF₂ thickness in the range 0–2000 Å the correlation length turned out to be 850 Å, while the r.m.s. roughness increased from 4 Å to 30 Å.     

SrHf0.67Ti0.33O3 high-k films deposited on Si by pulsed laser deposition

Abstract: The large band gap (3.58?eV) and dielectric properties (?? _r =50) of bulk SrHf_0.67Ti_0.33O₃ (SHTO) make it a promising high-k material. SHTO films were deposited on p-type (100) Si single crystal substrates by pulsed laser deposition. The composition, structure, thickness, and roughness of the SHTO films have been studied using X-ray Photoelectron Spectroscopy, X-ray reflectivity, transmission electron microscopy, and atomic force microscopy. The capacitance?Cvoltage and leakage current density characteristics of the films have been evaluated. For a post-annealed SHTO film with a thickness of 25 nm, the relatively high permittivity of 35 was achieved with the low leakage current density of 4.96×10^?4?A/cm² at ?2?V bias voltage.     

Hydrogen maser atomic beam resonances

Au^? ions at anionic places are formed in gold doped crystals by a reducing treatment withF centers. The ultraviolet absorption consists of 4 bands, which are namedA, B, C, andD in analogy to the isoelectronic centers of the s² type, like Tl⁺. TheB band oszillator strength strongly increases with temperature in accordance with a phonon allowed transition. The ratio of the dipole strength of theC band to that of theA band as a function of the relative position of theB band is compared with Suganos prediction. Zero phonon lines are found at helium temperatures for theA band in NaCl (2,985 Å), KCl (3,068 Å), and KBr (3,145 Å) and for theC band in KCl (2,329 Å). In KCl the Huang-Rhys factor isg=3.4 for theA band. The vibronic structure comes from the relatively large radius 6s ² state of the negative ion. Uniaxial stress splits the zero phonon line. The results definitely agree with the stress splitting behaviour of a degenerateΓ ₁→Γ ₄ transition. Inversion symmetry of the center is confirmed by the absence of a linear Stark effect.     

Spin-wave resonance in Co/Pd magnetic multilayers and NiFe/Cu/NiFe three-layered films

The spectrum of standing spin waves has been detected by the ferromagnetic resonance method in NiFe(740 Å)/Cu/NiFe(740 Å) three-layered film structure in the perpendicular configuration for the copper thickness d _Cu ≤ 30 Å. At thicknesses d _Cu > 30 Å, the resonance absorption curve is a superposition of two spinwave resonance spectra from individual ferromagnetic NiFe layers. For Co/Pd multilayer films, united spinwave responance spectra have also been observed at thicknesses of the paramagnetic palladium layer up to d _Pd < 30 Å. The partial exchange stiffness has been calculated for a spin wave propagating across the Pd layer (A _Pd = 0.1 × 10^?6 erg/cm). This value is always positive (up to the critical thickness of the palladium interlayer d _Pd < d _c) or equal to zero (d _Pd > d _c).