Depth distribution of point defects in Si bombarded by high-energy N5+ and Si5+ ions

Electron spin resonance has been used to study the depth distribution of point defects in Si samples bombarded by N⁵⁺ (E=16 MeV) and Si⁵⁺ (E=26.8 MeV) ions at 175 and 300 K in the dose range (4–8)×10¹⁵ cm⁻². It was established that unlike the implantation of moderate-energy Si ions (E ∼ 100 keV), the depth distributions of planar tetravacancies in samples bombarded by ions at 300 K under these conditions have two maxima. The experimental results indicate that the tetravacancy density maximum closer to the surface is formed as a result of secondary defect formation processes. No continuous amorphous layer was observed in the bulk of any of the Si samples. This experimental observation is evidence of defect annealing which takes place when high-energy ions are implanted in Si. Fiz. Tverd. Tela (St. Petersburg) 40, 217–222 (February 1998)     

Anisotropy of permittivity of the hexagonal multiferroic HoMnO<Subscript>3</Subscript> in the spectral range 0.6–5.0 eV

The anisotropy of the optical properties of a single crystal of the hexagonal manganite HoMnO₃ has been investigated by spectroscopic ellipsometry in the spectral range 0.6–5.0 eV. It has been demonstrated that the optical absorption edge for the polarization E ⊥ c is determined by the intense narrow transition O(2p) → Mn(3d) centered at 1.5 eV, whereas this transition for the polarization E ‖ c is strongly suppressed and shifted toward higher energies by 0.2 eV. It has been revealed that, at the temperature T = 293 K, the spectra for both polarizations E ‖ c and E ⊥ c exhibit a broad absorption band centered at ∼2.4 eV, which was earlier observed in nonlinear spectra during optical second harmonic generation.     

Temperature and frequency dependence of the spin-lattice relaxation times of E′1 centers in neutron-irradiated quartz glass

Results are reported for measurements of the spin-lattice relaxation times of E′₁ centers in quartz glass, produced by neutron irradiation, with the measurements made at two frequencies 9.25 and 24.0 GHz over a wide temperature interval 1.5–300 K. The experimental data are interpreted on the basis of interaction mechanisms of the spins with two-level systems with excitation energies ∼6, ∼26, and ∼420 cm⁻¹. A small modification of the existing theory allows us to explain a number of features of the observed temperature and frequency dependence of the relaxation rate. The results are compared with the data available in the literature on spin-lattice relaxation of irradiation centers in crystalline quartz and quartz glass. Fiz. Tverd. Tela (St. Petersburg) 39, 1335–1337 (August 1997)     

Redistribution of excess space charge in structures based on single-crystal strontium titanate

A band mechanism for transport in single-crystal strontium titanate (STO) is used as a basis for estimating the parameters characterizing the localization and redistribution of space charge in STO for T<100 K. A comparison of the experimental and calculated temperature dependences of the charge carrier concentration yield an estimate for the location of the Fermi level in STO at T=4.2 K with E _F-E _v∼10 meV. The phenomena at metal/STO and YBCO/STO contacts are discussed. Fiz. Tverd. Tela (St. Petersburg) 39, 349–352 (February 1997)     

Giant negative magnetoresistance in a nonmagnetic semiconductor

Studies of a classical III–V semiconductor (InSb) doped with 3d magnetic ions (Mn²⁺, having a localized spin S=55/2) reveal some unexpected transport properties. It is found that the transition from the metallic to the low-temperature insulator phase occurs at an impurity concentration N _Mn∼N _cr=2× 10¹⁷ cm⁻³ and a temperature T<T _cr∼1 K. Under these conditions a giant negative magnetoresistance arises. The experimental results can be explained in terms of the onset of a hard Mott-Hubbard gap Δ in the impurity band formed by the shallow manganese acceptor in InSb at N _Mn∼N _cr. A model describing the gap formation is proposed. Pis’ma Zh. éksp. Teor. Fiz. 69, No. 5, 358–362 (10 March 1999) Published in English in the original Russian journal. Edited by Steve Torstveit.     

Temperature dependence of electric resistance and magnetoresistance of pressed nanocomposites of multilayer nanotubes with the structure of nested cones

Bulk samples of carbon multilayer nanotubes with the structure of nested cones (fishbone structure) suitable for transport measurements, were prepared by compressing under high pressure (∼25 kbar) a nanotube precursor synthesized through thermal decomposition of polyethylene catalyzed by nickel. The structure of the initial nanotube material was studied using high-resolution transmission electron microscopy. In the low-temperature range (4.2–100 K) the electric resistance of the samples changes according to the law ln R ∝ (T ₀/T)^1/3, where T ₀∼7 K. The measured magnetoresistance is quadratic in the magnetic field and linear in the reciprocal temperature. The measurements have been interpreted in terms of two-dimensional variable-range hopping conductivity. It is suggested that the space between the inside and outside walls of nanotubes acts as a two-dimensional conducting medium. Estimates suggest a high value of the density of electron states at the Fermi level of about 5×10²¹ eV⁻¹ cm⁻³. Zh. éksp. Teor. Fiz. 113, 2221–2228 (June 1998)     

Magnetooptical microwave spectroscopy of the coherent magnetic state in the mixed valence compound SmB6 in the frequency range 40–120 GHz

In undoped pure single crystals of the mixed valence compound SmB₆ anomalous ESR absorption is observed in the frequency range v=40–120 GHz at temperatures of 1.8–4.2 K. The ESR for the case of the coherent ground state consists of two components corresponding to g-factors g ₁=1.907±0.003 and g ₂=1.890±0.003. The amplitude of both ESR lines strongly depends on temperature in the temperature range studied: the amplitude of the first line with g=g ₁ increases and the amplitude of the second line decreases with temperature. A model based on consideration of intrinsic defects in the SmB₆ crystalline lattice, with a densit ∼10¹⁵−10¹⁶ cm⁻³, is suggested as an explanation for the anomalous ESR-behavior. In the frequency range v>70 GHz at T=4.2 K, in addition to the main ESR lines, a new magnetic resonance with a hysteretic field dependence is discovered. Pis’ma Zh. éksp. Teor. Fiz. 64, No. 10, 707–712 (25 November 1996) Published in English in the original Russian journal. Edited by Steve Torstveit.     

Transport and magnetic properties of the compounds YbNi4In and YbNiIn4 with valence-unstable Yb

The electrical resistance, thermal emf, and magnetic susceptibility of the compounds YbNi₄In and YbNiIn₄, with valence-unstable Yb, are measured at temperatures of 4.2–300 K. The valence state of Yb is identified by measuring the x-ray L _III absorption spectra at T=300 K. YbNi₄In is shown to have a Kondo magnetic lattice and exhibit crystal-field effects. The preferred scheme is splitting of the 4f level of Yb³⁺ with doublet formation in the ground and first excited states. In the case of YbNiIn₄, a valence-unstable state of Yb is formed that makes no significant additional contributions to the transport coefficients. Fiz. Tverd. Tela (St. Petersburg) 41, 1918–1921 (November 1999)     

Spin-lattice relaxation and Knight shift on protons in the hydrogen-doped superconducting system H0.2La1.8Sr0.2CuO4

Measurements of the spin-lattice relaxation rate and Knight shift on protons in hydrogen-doped superconducting H_0.2La_1.8Sr_0.2CuO₄ samples are performed in the temperature range 4.2–300 K. An anomalous behavior of the spin-lattice relaxation rate is observed at low temperatures T∼20 K. A model is constructed that explains the appearance of carrier-depleted regions in the bulk of the semiconductor on the basis of the formation of a charged defect (proton). Pis’ma Zh. éksp. Teor. Fiz. 63, No. 7, 533–538 (10 April 1996)     

Paramagnetic and spin-glass properties of pyrochlore-like oxides Ln2Mn2/3Mo4/3O7 (Ln=Sm, Gd, Tb, or Y)

The magnetic properties of complex oxides Ln ₂Mn_2/3Mo_4/3O₇ (Ln=Sm, Gd, Tb, or Y) with a pyrochlore-type structure are studied in the temperature range 2–300 K. For all compounds in the paramagnetic state, the temperature dependence of the magnetic susceptibility is described by a generalized Curie-Weiss law with a temperature-independent component of ∼10⁻⁶ cm³/g and with a Weiss constant Θ<0 and |Θ|<16 K. At low temperatures (T<10–12 K), the compounds have spin-glass properties; they exhibit magnetic and temperature hysteresis and the typical dependences of the imaginary and real parts of the dynamic magnetic susceptibility on temperature and the frequency of an ac magnetic field in a wide range of magnetization relaxation times. The data obtained suggest that d electrons are responsible for the formation of frustrated exchange interactions in the compounds and that 4f electrons in the compounds with Sm or Tb provide strong magnetic-anisotropy effects. __________ Translated from Fizika Tverdogo Tela, Vol. 46, No. 2, 2004, pp. 287–295. Original Russian Text Copyright ? 2004 by Korolev, Bazuev.     

Blistering of rhenium irradiated with 21keV helium ions

This paper describes blistering of rhenium following 21 keV He⁺-ion irradiation at temperatures between 300 K and 1200 K. Blistering starts at 300 K at a dose of 3×10¹⁷ ions/cm². The most probable blister diameter varies from 4400 ? at 300 K to 10100 ? at 1200 K. The blister depth τ _bl , the blister diameter φ _bl and the blister heighth _bi show a distribution. From the observations one could derive the following relationships:h _bl = 0.35φ _bl ; τ _bl =3.43φ _bl ^2/3 . The erosion yieldE _y due to blistering is function of doseE _y =0.51 atoms/ion at 3×10¹⁷ ions/cm²,E _y =0.56 atoms/ion at 6×10¹⁷ ions/cm² andE _y =0.14 atoms/ion at 3×10¹⁸ ions/cm². The sputtering yieldS (21 keV) is estimated to be ∼0.1 atom/ion. The corresponding surface regression is 44? at 3×10¹⁷ ions/cm² and 1323 ? at 9×10¹⁸ ions/cm². Surface regression has therefore little influence on the observations at low doses. Work performed at the Mathematicals Science Department of S.C.K./C.E.N. at Mol (Belgium)     

Quenching of photoconductivity by a strong electric field in tin δ-doped GaAs structures

The conductivity of GaAs structures δ-doped with tin on the vicinal and singular faces was investigated in strong electric fields up to E=10⁴ V/cm and temperatures in the range 4.2 K <T<300 K. The measurements were performed in the dark and under illumination with visible light. Long-time photoconductivity of 2D electrons with threshold T _c ≈240 K was observed in samples which were δ-doped with tin on the vicinal face. A strong electric field not only quenches photoconductivity, but also increases the resistance of the structures at temperatures T<T _c by several orders of magnitude with respect to the dark resistance. Pis’ma Zh. éksp. Teor. Fiz. 63, No. 5, 326–330 (10 March 1996)     

Nonequilibrium paramagnetic susceptibility of gallium impurity centers in lead telluride

The temperature dependences of the resistance and magnetic susceptibility are studied in gallium-doped lead telluride, which is characterized by a delayed photoconductivity effect, under various illumination conditions. After a sample is illuminated at low temperatures, the magnetic susceptibility is diamagnetic in the region of metallic delayed conductivity (for T<=0 K). In the region of thermodynamic equilibrium (T<70 K), where conductivity is activational, the magnetic susceptibility is likewise diamagnetic and essentially equals the low-temperature value. A paramagnetic susceptibility peak is observed in the transitional region (T∼50–70 K), where the conductivity is of a nonequilibrium character but the carriers are still nondegenerate. This peak increases in magnitude with the rate of measurements in the indicated temperature range. In addition, a paramagnetic variation of the susceptibility following the Curie law is observed with uncontrollable (weak) illumination from the cryostat cap at low temperatures (T<25 K). The interpretation of the observed dependences is based on notions of variable valence of gallium in lead telluride, while the appearance of a paramagnetic susceptibility peak is attributed to the presence of shallow localized levels of gallium in a trivalent state. Zh. éksp. Teor. Fiz. 114, 1859–1867 (November 1998)     

Thermal conductivity of crystalline fullerite C60 in the simple cubic phase

The behavior of the thermal conductivity k(T) of bulk faceted fullerite C₆₀ crystals is investigated at temperatures T=8–220 K. The samples are prepared by the gas-transport method from pure C₆₀, containing less than 0.01% impurities. It is found that as the temperature decreases, the thermal conductivity of the crystal increases, reaches a maximum at T=15–20 K, and drops by a factor of ∼2, proportional to the change in the specific heat, on cooling to 8 K. The effective phonon mean free path λ _p, estimated from the thermal conductivity and known from the published values of the specific heat of fullerite, is comparable to the lattice constant of the crystal λ _p∼d=1.4 nm at temperatures T>200 K and reaches values λ_p∼50d at T<15 K, i.e., the maximum phonon ranges are limited by scattering on defects in the volume of the sample in the simple cubic phase. In the range T=25−75 K the observed temperature dependence k(T) can be described by the expression k(T)∼exp(Θ/bT), characteristic for the behavior of the thermal conductivity of perfect nonconducting crystals at temperatures below the Debye temperature Θ (Θ=80 K in fullerite), where umklapp phonon-phonon scattering processes predominate in the volume of the sample. Pis’ma Zh. éksp. Teor. Fiz. 65, No. 8, 651–656 (25 April 1997)     

Manganese-doped ZnSiAs<Subscript>2</Subscript> chalcopyrite: A new advanced material for spintronics

A new spintronics material with the Curie temperature above room temperature, the ZnSiAs₂ chalcopyrite doped with 1 and 2 wt % Mn, is synthesized. The magnetization, electrical resistivity, magnetoresistance, and the Hall effect of these compositions are studied. The temperature dependence of the electrical resistivity follows a semiconducting pattern with an activation energy of 0.12–0.38 eV (in the temperature range 124 K ≤ T ≤ 263 K for both compositions). The hole mobility and concentration are 1.33, 2.13 cm²/V s and 2.2 × 10¹⁶, 8 × 10¹⁶ cm⁻³ at T = 293 K for the 1 and 2 wt % Mn compositions, respectively. The magnetoresistance of both compositions, including the region of the Curie point, does not exceed 0.4%. The temperature dependence of the magnetization M(T) of both compositions exhibits a complicated character; indeed, for T ≤ 15 K, it is characteristic of superparamagnets, while for T > 15 K, spontaneous magnetization appears which correspond to a decreased magnetic moment per formula unit as compared to that which would be observed upon complete ferromagnetic ordering of Mn²⁺ spins or antiferromagnetic ordering of spins of the Mn²⁺ and Mn³⁺ ions. Thus, for T > 15 K, it is a frustrated ferro- or ferrimagnet. It is found that, unlike the conventional superparamagnets, the cluster moment μ _c in these compositions depends on the magnetic field: ∼12000–20000μ_B for H = 0.1 kOe, ∼52–55μ_B for H = 11 kOe, and ∼8.6–11.0μ_B at H = 50 kOe for the compositions with 1 and 2 wt % Mn, respectively. The specific features of the magnetic properties are explained by the competition between the carrier-mediated exchange and superexchange interactions.     

Thermopower in quasi-two-dimensional (BEDT-TTF) m X n organic conductors

Thermopower of (BEDT-TTF) _m X _n organic conductors has been studied using a dedicated measurement technique in the temperature range of 4.2 to 300 K. It turned out that some features of the thermopower in quasi-two-dimensional metals, namely the presence of a peak in the thermopower of α-(BEDT-TTF)₂MHg(SCN)₄ and a plateau in κ-(BEDT-TTF)₂Cu(NCS)₂ in the temperature interval between 10 and 50 K, are probably due to the phonon drag effect. Similar temperature dependences of the Seebeck coefficient can be satisfactorily interpreted in terms of a simple model taking into account the real experimental curve of the phonon heat capacity versus temperature, C ∝ T ², which is not described by the Debye formula. One feature distinguishing organic superconductors from magnetically ordered metals is a stronger temperature dependence of the characteristic electron-phonon scattering time τ _e-ph(T). Phonon drag effects also determine the behavior of the thermopower in the (BEDT-TTF)₃Cl₂·2H₂O organic conductor, which is characterized by a metal-insulator transition at T∼150 K. An analysis of measurements of the conductivity and thermopower vs. temperature taken together indicates that the transition in this compound has a complex nature: first (at T∼150 K) a metal-insulator transition occurs, which produces an energy gap in the band spectrum, then at a lower temperature (T∼20 K) a transition to a charge-density wave state takes place. Zh. éksp. Teor. Fiz. 113, 323–338 (January 1998)     

Effect of regimes of cooling in a magnetic field on the magnetization of a La0.9Sr0.1MnO3 single crystal

Magnetization measurements were performed on a lanthanum manganite La_0.9Sr_0.1MnO₃ single crystal in the temperature interval 4.2–300 K and magnetic field interval 50 Oe-55 kOe in two sample cooling regimes: 1) cooling down to 4.2 K in a high (55 kOe) magnetic field, and 2) cooling in a “zero” field. It is shown that the temperature dependences of the magnetization M(T) are substantially different in these regimes. Pronounced anomalies of M(T) were observed at temperatures T*=103 K and T _c =145 K. The first anomaly is attributed to a structural transition, while the second one corresponds to a ferromagnet-paramagnet phase transition. The magnetization of a La_0.9Sr_0.1MnO₃ single crystal in the cooling regimes studied shows typical “spin-glass” behavior. Pis’ma Zh. éksp. Teor. Fiz. 68, No. 1, 39–43 (10 July 1998)     

Far-infrared optical excitations in multiferroic TbMnO<Subscript>3</Subscript>

We provide a detailed study of the reflectivity of multiferroic TbMnO₃ for wave numbers from 40 cm^-1 to 1000 cm^-1 and temperatures 5 K < T < 300 K. Excitations are studied for polarization directions E || a, the polarization where electromagnons are observed, and for E || c, the direction of the spontaneous polarization in this material. The temperature dependencies of eigenfrequencies, damping constants and polar strengths of all modes are studied and analyzed. For E || a and below the spiral ordering temperature of about 27 K we observe a transfer of optical weight from phonon excitations to electromagnons, which mainly involves low-frequency phonons. For E || c an unusual increase of the total polar strength and hence of the dielectric constant is observed indicating significant transfer of dynamic charge probably within manganese-oxygen bonds on decreasing temperatures.     

Raman-gain, linewidth, and effective g -value with spin-flip-Raman scattering in inSb

In this paper we report on measurements of spin-flip-Raman gain inn-InSb as a function of the magnetic field. The measurements were carried out at temperatures of 1.8 K and 4.2 K and at a carrier concentration of 1.35×10¹⁵ cm⁻³. The Raman cross sections obtained from these results, e.g. 1.25×10⁻²⁰ cm²/sr at a magnetic field of 10 kG and a pump frequency of 1884.35 cm⁻¹, agree very well with those theoretically predicted by Wherrett and Wolland. Furthermore, these measurements yield line shapes and linewidths of the spontaneous scattering (100–1500 MHz) and allow the determination of the effectiveg-value with an accuracy known from ESR-investigations. These results are discussed in terms of already published theoretical investigations.