Crystal structure and tribological properties of molybdenum disulfide films prepared by magnetron sputtering technology

Molybdenum disulfide (MoS₂) is widely used in practice due to its excellent lubricating properties. However, research on the tribological properties of magnetron sputtering for depositing MoS₂ films remains limited. Herein, the tribological properties of MoS₂ films were investigated in detail through a series of characterization and friction coefficient tests. MoS₂ films were deposited onto silicon substrates by magnetron sputtering under different radio-frequency powers (P_rf). With increased P_rf, the crystallinity of the films gradually increases, whereas the friction coefficient initially decreases and then increases. P_rf also affects the chemical composition, surface morphology, and grain size of MoS₂ films. At P_rf = 300 W, the film surface is dense and smooth, the grain distribution is uniform. Moreover, the films have superior tribological properties and low friction coefficient, which can be attributed to the weak van der Waals force among MoS₂ layers and the microscopic morphology of the films. All these results indicate that by reasonably controlling the preparation parameters, MoS₂ films with excellent tribological properties can be prepared by magnetron sputtering.     

Functionalization of lamellar molybdenum disulphide nanocomposite with gold nanoparticles

This work explores the functionalization of an organic-inorganic MoS₂ lamellar compound, prepared by a chemical liquid deposition method (CLD), that has an interlamellar distance of ∼5.2 nm, using clusters of gold nanoparticles. The gold nanoparticles have a mean diameter of 1.2 nm, a stability of ∼85 days, and a zeta potential measured to be ζ = −6.8 mV (solid). The nanoparticles are localized in the hydrophilic zones, defined by the presence of amine groups of the surfactant between the lamella of MoS₂. SEM, TEM, EDAX and electron diffraction provide conclusive evidence of the interlamellar insertion of the gold nanoparticles in the MoS₂.     

Significant Enhancement of Hydrogen Production in MoS2/Cu2ZnSnS4 Nanoparticles

Hydrogen produced from water splitting is a renewable and clean energy source. Great efforts have been paid in searching for inexpensive and highly efficient photocatalysts. Here, significant enhancement of hydrogen production has been achieved by introducing ≈1 mol% of MoS₂ to Cu₂ZnSnS₄ nanoparticles. The MoS₂/Cu₂ZnSnS₄ nanoparticles showed a hydrogen evolution rate of ≈0.47 mmol g⁻¹ h⁻¹ in the presence of sacrificial agents, which is 7.8 times that of Cu₂ZnSnS₄ nanoparticles (0.06 mmol g⁻¹ h⁻¹). In addition, the MoS₂/Cu₂ZnSnS₄ nanoparticles exhibited high stability, and only ≈3% of catalytic activity was lost after a long time irradiation (72 h). Microstructure investigation on the MoS₂/Cu₂ZnSnS₄ nanoparticles reveals that the intimate contact between the nanostructured MoS₂ and Cu₂ZnSnS₄ nanoparticles provides an effective one‐way expressway for photogenerated electrons transferring from the conduction band of Cu₂ZnSnS₄ to MoS₂, thus boosting the lifetime of charge carriers, as well as reducing the recombination rate of electrons and holes.     

Synthesis of ceramic composites using three-dimensional nanostructuring (reinforcement) of alumina matrix with TiN and SiC nanostructures and study of their mechanical properties

The paper considers a new 3D nanostructuring technology of next-genergtion ceramic composites based on a ceramic matrix reinforced with titanium nitride (TiN) gnd silicon carbide (diC). Research data are reported on the formation of TiN and diC nanostructures on the surface of disperse alumina during successive gas chemisorption of organic Ti(N(CH₃)₂)₄ (tetrakis-dimethylamino-titanium, TDMAT) and ammonia NH₃ in the first case and Cl₂Si(CH₃)₂ and methane CH₄ in the second. Such chemisorption increases the number of surface-attached Ti-N groups crystallized on annealing at 1100°C with the formation of a TiN or a SiC nanoparticle layer. According to X-ray diffraction and electron microscopy, TiN nanoparticles with an average size of about 40 nm are formed on the surface of alumina particles after TDMAT and NH₃ treatment for 2 h and subsequent annealing at 1100°C. The mechanical properties of compacted α-A1₂O₃-based ceramics reinforced with TiN and SiC nanoparticles excel the properties of the best ceramic materials provided by different manufacturers.     

Structural and polarization properties of polyimide/TiO2 nanocomposites

Polyimide (PI)/titanium dioxide (TiO₂) nanocomposite films were prepared by a solution mixing method with different contents of TiO₂ nanoparticles. The structural and thermal properties of pure PI and PI/TiO₂ nanocomposite films were studied by several techniques such as scanning electron microscopy (SEM), atomic force microscopy (AFM), X-ray diffraction (XRD), Fourier transform infrared spectroscopy (FTIR), and thermally stimulated depolarization current (TSDC). The SEM and AFM measurements show the uniform dispersion of TiO₂ nanoparticles in PI matrix, and it is also observed that the value of average roughness increases with increasing the contents of TiO₂ nanoparticles. The XRD pattern shows the presence of TiO₂ nanoparticles in PI matrix. It has been observed that the average crystallite size and percentage of crystallinity increase with content of the TiO₂ nanoparticles. FTIR spectra depict the position of different bonds in PI and nanocomposite samples. The TSDC results represent the modification of polarization phenomenon after filling of PI by titania nanoparticles.     

Synthesis and characterization of superhard Ti-Si-N films obtained in an inductively coupled plasma enhanced chemical vapor deposition (ICP-CVD) with magnetic confinement

Using a novel inductively coupled plasma enhanced chemical vapor deposition (ICP-CVD) with magnetic confinement system, Ti-Si-N films were prepared on single-crystal silicon wafer substrates by sputtering Ti and Si (5 at.%:1 at.%) alloyed target in argon/nitrogen plasma. High-resolution transmission electron microscopy (HRTEM), X-ray photoelectron spectroscopy (XPS), X-ray diffractometer (XRD), field emission scanning electron microscope (FESEM), atomic force microscopy (AFM) and Nano Indenter XP tester were employed to characterize nanostructure and performances of the films. These films were essentially composed of TiN nanocrystallites embedded in an amorphous Si₃N₄ matrix with maximum hardness value of 44 GPa. Experimental results showed that the film hardness was mainly dependent on the TiN crystallite size and preferred orientation, which could be tailored by the adjustment of the N₂/Ar ratio. When the N₂/Ar ratio was 3, the film possessed the minimum TiN size of 10.5 nm and the maximum hardness of 44 GPa.     

Characterization and applications of Ag nanoparticles in waveguides

This work reports the preparation, characterization and applications of silver nanoparticles synthesized through the chemical reduction of AgNO₃ and protected by surface modifier. In order to characterize the formation of nanoparticles and the role of synthesis parameters (time, temperature) several studies were made, such as UV-vis spectroscopy, TEM and AFM. We present the incorporation of Ag nanoparticles in sol-gel obtained matrix, because this technique allows the incorporation of larger concentrations of active optical agents and the obtainment of full-dense films at lower temperature than those possible by other methods. The final goal of this work is the preparation of 80SiO₂·20B₂O₃ films for active optical waveguides doped with Ag nanoparticles and Erbium. We are looking for the reinforcement of the fluorescence intensity due to the effect of the resonant coupling of both optical agents (Er and nanoparticles) to produce optical amplifiers.     

不同生长环境下砷化镓纳米颗粒的应变场模拟

对于埋嵌在薄膜材料中的纳米颗粒,在其生长过程中总是不可避免地伴随着应变场的产生,而这种应变场的分布能反映纳米颗粒的结构变化,纳米颗粒结构与它的物理性能有重要的关系.研究埋嵌在不同薄膜材料中的纳米颗粒生长过程中的应变场分布对于调控纳米颗粒的物理性能有着重要的意义.本文利用有限元算法分别计算了埋嵌在非晶氧化铝薄膜和非晶二氧化硅薄膜材料中的砷化镓纳米颗粒生长过程中的应变场分布.砷化镓纳米颗粒在以上两薄膜材料生长过程中都受到非均匀偏应变作用.对于埋嵌在氧化铝薄膜中的砷化镓纳米颗粒,其生长过程中,纳米颗粒内部受到的应变大于纳米颗粒表面受到的应变;而对于埋嵌在二氧化硅薄膜中的砷化镓纳米颗粒,纳米颗粒内部受到的应变小于纳米颗粒表面受到的应变.选择砷化镓纳米颗粒生长的薄膜材料可以调控纳米颗粒生长过程中的应变场分布,从而进一步调控纳米颗粒的晶格结构和形貌及其物理性能.     

Structure and properties of DLC–MoS2 thin films synthesized by BTIBD method

Diamond-like carbon (DLC)–MoS₂ composite thin films were synthesized using a biased target ion beam deposition (BTIBD) technique in which MoS₂ was produced by sputtering a MoS₂ target using Ar ion beams while DLC was deposited by ion beam deposition with CH₄ gas as carbon source. The structure and properties of the synthesized films were characterized by X-ray diffraction, X-ray absorption near edge structure (XANES), Raman spectroscopy, nanoindentation, ball-on-disk testing, and corrosion testing. The effect of MoS₂ target bias voltage, ranging from −200 to −800 V, on the structure and properties of the DLC–MoS₂ films was further investigated. The results showed that the hardness decreases from 9.1 GPa to 7 GPa, the Young?s modulus decreases from 100 GPa to 78 GPa, the coefficient of friction (COF) increases from 0.02 to 0.17, and the specific wear rate coefficient (k) increases from 5×10⁻⁷ to 5×10⁻⁶ mm³ N⁻¹ m⁻¹, with increasing the biasing voltage from 200 V to 800 V. Also, the corrosion resistance of the DLC–MoS₂ films decreased with the raise of biasing voltage. Comparing with the pure DLC and pure MoS₂ films, the DLC–MoS₂ films deposited at low biasing voltages showed better tribological properties including lower COF and k in ambient air environment.     

Doping of Fullerene‐Like MoS2 Nanoparticles with Minute Amounts of Niobium

Inorganic fullerene‐like closed‐cage nanoparticles of MoS₂ and WS₂ (IF‐MoS₂; IF‐WS₂), are synthesized in substantial amounts and their properties are widely studied. Their superior tribological properties led to large scale commercial applications as solid lubricants in numerous products and technologies. Doping of these nanoparticles can be used to tune their physical properties. In the current work, niobium (Nb) doping of the nanoparticles is accomplished to an unprecedented low level (≤0.1 at%), which allows controlling the work function and the band gap. The Nb contributes a positive charge, which partially compensates the negative surface charge induced by the intrinsic defects (sulfur vacancies). The energy diagram and position of the Fermi level on the nanoparticles surface is determined by Kelvin probe microscopy and optical measurements. Some potential applications of these nanoparticles are briefly discussed.     

Microstructure and tribological properties of WS2/MoS2 multilayer films

In this paper, a novel method, namely, magnetron sputtering and low temperature ion sulfurizing combined technique was used to fabricate the solid lubrication WS₂/MoS₂ multilayer films. Scanning Electron Microscopy (SEM) was used to observe the surface and worn scar morphologies. X-ray diffraction (XRD) was utilized to analyze the phase structure. The nano-hardness and elastic modulus of WS₂/MoS₂ multilayer films were surveyed by the nano-indentation tester. The friction and wear test were conducted on a ball-on-disk wear tester under dry sliding condition. The results obtained showed that the WS₂/MoS₂ multilayer films exhibited a lower friction coefficient and better wear-resistance when compared with single WS₂ film and original 1045 steel.     

Improved resistive switching performance in Cu-cation migrated MoS2 based ReRAM device incorporated with tungsten nitride bottom electrode

The resistive switching characteristics of sputtered deposited molybdenum disulphide (MoS₂) thin film has been investigated in Cu/MoS₂/W₂N stack configuration for Resistive Random Access Memory (ReRAM) application. The benefits of incorporating tungsten nitride (W₂N) as a bottom electrode material were demonstrate by stability in operating voltages, good endurance (10³ cycles) and long non-volatile retention (10³?s) characteristics. Resistive switching properties in Cu/MoS₂/W₂N structure are induced by the formation/disruption of Cu conducting filaments in MoS₂ thin film. Ohmic law and space charge limited current (SCLC) are observed as dominant conduction mechanism in low resistance state (LRS) and high resistance state (HRS) respectively. This study suggests the application of MoS₂ thin films with W₂N bottom electrode for next generation non-volatile ReRAM application.     

Deposition and characterization of YBCO films with BZO inclusions on single crystal substrate

YBa₂Cu₃O_7?δ thin films with BaZrO₃ (BZO) inclusions have been deposited on SrTiO₃ substrates in order to study the effect of nanoparticles addition into YBCO matrix. Samples with 7% (mol) BZO content were obtained by PLD varying the deposition conditions, in order to evaluate their effect on the films transport properties. The change in deposition parameters, especially of the deposition temperature, has been discovered to be efficient for a reduction or complete recovery of the critical temperature decrease produced by BZO addition. The effect of the deposition temperature on in-field films transport properties as well as on the presence of c-axis correlated defects typically ascribable to nanoparticles addition, can be recognised in an improvement in J_C retention in applied magnetic field and, for higher temperatures, the appearance of correlated pinning contribution, as confirmed by pinning force density measurements.     

Influence of MoS2 deposition time on the photocatalytic activity of MoS2/ V,N co-doped TiO2 heterostructure thin film in the visible light region

Electron-hole separation and a narrow band-gap are essential steps to obtain efficient photocatalysis, towards which the use of co-catalysts or co-doped-TiO₂ photocatalysts has become a widely used strategy. In this article, the combination of MoS₂ and co-doping of V, N is the goal to achieve high performance photocatalysts. We synthesized MoS₂/V, N co-doped TiO₂ heterostructure thin film by sol-gel and chemical bath deposition methods. Herein, we investigated the influence of deposition time of MoS₂ layer on visible-photocatalytic activity of the obtained samples. The thin films were characterized by X-ray diffraction, scanning electron microscopy, X-ray photoelectron spectroscopy and UV–vis spectroscopy techniques. Visible-photocatalytic activity of these samples were evaluated on the removal of methylene blue (MB) under visible light irradiation. The results show that the aforementioned heterostructure thin films have better photocatalytic activities than those of TiO₂, MoS₂ and V, N co-doped TiO₂ counterparts in visible light region. The mechanism for increasing visible-photocatalytic property of the heterostructure thin films is discussed in detail. We find that MoS₂/V, N co-doped TiO₂ heterostructure thin film at MoS₂ deposition time of 45-min shows the highest photocatalytic performance in the visible light region with MB photodegradation rate about 99% for 150 min and the degradation rate constant is 2.06 times higher than that of V and N co-doped TiO₂ counterpart.     

Interface modification of MoS2 counter electrode/electrolyte in dye-sensitized solar cells by incorporating TiO2 nanoparticles

To achieve the high efficiency in dye-sensitized solar cells (DSSCs), the interface modification of MoS₂ counter electrode (CE)/electrolyte should be carried out. Making the modified MoS₂ CE by incorporating TiO₂ nanoparticles provides possibilities to enhance electrocatalytic activity. The DSSCs with the MoS₂/TiO₂ CE show enhanced performance compared with DSSCs with the MoS₂ CE. The experimental results revealed that the MoS₂/TiO₂ nanocomposite influences on the power conversion efficiency by enhancing electrocatalytic activity and increasing the active surface area that serve to increase the short circuit current. This understanding can provide guidance for the development of highly efficient DSSCs with platinum-free CEs.     

Nanocomposites of Poly(vinyl alcohol) Reinforced with Chemically Modified AL2O3: Synthesis and Characterization

The surface of α-alumina (Al₂O₃) nanoparticles was first modified with γ-aminopropyltriethoxy silane as a coupling agent. Then a series of poly(vinyl alcohol)/ surface modified Al₂O₃ nanocomposite suspensions were prepared in ethanol by a simple ultrasonic irradiation process. Composite films with 5, 10, and 15 wt % of inorganic Al₂O₃ nanoparticles were achieved after solvent evaporation. The formation of the composite materials were confirmed by Fourier transform infrared spectroscopy, X-ray diffraction, field emission scanning electron microscopy (FE-SEM), transmission electron microscopy (TEM), thermogravimetric analysis (TGA), and optical transparencies. The FE-SEM and TEM results showed a homogenous dispersion of nanoscale inorganic particles in the poly(vinyl alcohol) matrix. TGA thermographs showed that the thermal stability of the prepared Al₂O₃-reinforced nanocomposites was improved, increasing with increasing content of the nanoparticles. According to the optical transparencies, the optical clarity of poly(vinyl alcohol)/Al₂O₃ nanocomposite films was only slightly affected by the presence of the Al₂O₃ content.     

Ohmic-rectification conversion that is tuned using H2O2 for enhanced rectification and optoelectronic performance in MoS2/ZnO nanorod devices

The characteristics of a p–n junction that consists of MoS₂ thin films and ZnO nanorods grown on heavily-doped n-type Si substrate are reported. The current–voltage characteristics for MoS₂/ZnO nanorod devices exhibit ohmic conduction. The measured current is limited by thermionic emission in MoS₂/ZnO nanorod devices that are treated with H₂O₂. H₂O₂ treatment results in the modification of the MoS₂–ZnO interface, so the rectification performance for MoS₂/ZnO nanorod devices is improved. H₂O₂ treatment also increases the responsivity of MoS₂/ZnO nanorod devices to solar irradiation. This phenomenon is caused by induced ohmic-rectification conversion due to H₂O₂ treatment.     

Formation of TiN-Ir particle films using pulsed-laser deposition and their electrolytic properties in producing hypochlorous acid

Using sintered TiN and TiN-Ir (Ir contents: 5.9-14.2 at.%) targets, pulsed-laser deposition (PLD) was carried out to produce thin films composed of nanoparticles and particulates in the presence of nitrogen gas. The size (2-100 nm) of the produced crystalline TiN nanoparticles increased as nitrogen pressure was increased in the range from 1.33 to 1.33 × 10² Pa. At a pressure of 1.33 × 10³ Pa, amorphous TiN nanoparticles combined in the form of chains. Large Ir particulates with diameters of up to 2 μm were particularly prominent in TiN-Ir films. Size distributions of the Ir particulates were dependent on ablation laser wavelength; that is, the diameter decreased at laser wavelength shortened. The TiN-Ir films with different Ir contents and morphologies on Ti substrates were evaluated as electrolysis electrodes for water disinfection. The highest current efficiency was 0.45%, which is comparable to that of conventional Ti-Pt electrodes, for a chloride-ion concentration of 9 mg dm⁻³.     

Large-scale chemical vapor deposition growth of highly crystalline MoS2 thin films on various substrates and their optoelectronic properties

Large-scale growth of mostly monolayer molybdenum disulfide (MoS₂) on quartz, sapphire, SiO₂/Si, and waveguide substrates is demonstrated by chemical vapor deposition with the same growth parameters. Centimeter-scale areas with large flakes and films of MoS₂ on all the growth substrates are observed. The atomic force microscopy and Raman measurements indicate the synthesized MoS₂ is monolayer with high quality and uniformity. The MoS₂ field effect transistors based on the as-grown MoS₂ exhibit carrier mobility of 1–2 cm²V^?1s^?1 and On/Off ratio of ~10⁴ while showing large photoresponse. Our results provide a simple approach to realize MoS₂ on various substrates for electronics and optoelectronics applications.     

The effect of bias voltage and working pressure on S/Mo ratio at MoS2-Ti composite films

S/Mo ratio has a crucial effect on the tribological properties of MoS₂-Ti composite films. The deposition parameters as such bias voltage and working pressure play a dominant role on the change of this ratio value. To determine the effect of working pressure and bias voltage on S/Mo ratio, MoS₂-Ti composite films were deposited on glass wafers by pulsed-dc magnetron sputtering (PMS). The deposition process was performed for nine different test conditions at various levels of target current, working pressure, and substrate voltage using the Taguchi L₉(3⁴) experimental method. It was observed that the chemical composition of MoS₂-Ti composite films was significantly affected by sputtering parameters. It was also observed that S/Mo ratio decreased as the bias voltage increased at a constant working pressure and S/Mo ratio increased with increasing working pressure at a constant bias voltage.