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1.
The relaxor ferroelectric lead iron tantalate, Pb(Fe0.5Ta0.5)O3 (PFT) is synthesized by Coulombite precursor method. The X-ray diffraction pattern of the sample at room temperature shows
a cubic phase. The field dependence of dielectric response is measured in a frequency range 0.1 kHz — 1 MHz and in a temperature
range from 173–373 K. The temperature dependence of permittivity (ɛ′) shows broad maxima at various frequencies. The frequency dependence of the permittivity maximum temperature (T
m
) has been modelled using Vogel-Fulcher relation.
相似文献
2.
L. P. Ol’khovik Z. I. Sizova E. V. Shurinova A. S. Kamzin 《Physics of the Solid State》2010,52(2):311-316
This paper reports on a study of the field and temperature dependences of the parameters of the particle magnetic interaction
in a densely packed system of nanocrystals of the highly anisotropic hexagonal ferrite BaFe12O19 with the particles distributed in diameter within the range 10—100 nm and having volumes satisfying the criterion of “small
Stoner—Wohlfarth particles.” It is shown that the resultant particle interaction in the temperature range 300 K≤T≤640 K has a negative sign, whereas for T>640 K, it is positive. The maximum values of the parameter Δm allow classification of the interaction as moderate in strength. The temperature dependences of the interaction parameters
are found to correlate with manifestation of the size and surface effects in the system, which are characteristic of small
particles (transition to the superparamagnetic state, “surface” anisotropy, and reduced exchange interaction in a structurally
defective near-surface layer of particles). 相似文献
3.
The absolute value of the recoil-free fraction was measured accurately at three reference temperatures in the range 300 K
down to 4 K, in two Sn-baseA 15 superconductors with disparate superconducting properties. The higher-T
c compound Nb3Sn (T
c≈18K) exhibits low-temperature anharmonicity; this is in contrast to the lattice-dynamics of the low-T
c isomorph V3Sn (T
c≈4K) in which it is observed that harmonic binding of the Sn atoms is prevalent down to low temperatures. The difference in
the superconducting properties of the two compounds is shown to correlate with the considerable difference in their lattice-dynamics. 相似文献
4.
Yu. F. Minenkov 《Il Nuovo Cimento D》1995,17(4):435-438
Summary The experimental temperature dependence of the heat capacityC
p(T) of solid tin (Sn) in its premelting region 402.07–502.22 K was investigated and two regions with different temperature
dependences ofC
p(T) were found. In the far (from the melting temperatureT
m) region 402.07–485.88 K the experimentalC
p(T) of Sn is described by the standard vacancy model. In the close region 485.88–502.22 K it is described by the formation
of complicated volumetric defects in the crystalline lattice of solid Sn near itsT
m. 相似文献
5.
The processes of cluster formation in liquid alcohols, water, methanol, n-hexanol, and n-hexane have been investigated by the method of flicker-noise spectroscopy. Two types of clusters — clusters with a close-packed
structure and clusters with a loose structure — have been detected. The energy of formation of different clusters in methanol
and n-hexane ranges, respectively, from −250 to +250 J/mole and from −50 to +50 J/mole. The smallest clusters of methanol, n-hexanol, water, and n-hexane consist, respectively, of six, two, eleven, and two molecules, and their largest clusters represent oscillators consisting,
respectively, of 50,400, 17,200, 93,500, and 33,150 molecules at 274 K. In methanol at 271 K, more than 44 types of clusters
consisting of 6, 97, 152, 219, 297, 492, 1029, 1368, 1560, etc. molecules were detected. In n-hexanol at 273 K, 57 types of clusters were detected. Models of small clusters are proposed. In water, the content of close-packed
clusters is maximum at 277 K. The energy of formation/decomposition of small clusters in water ranges from −0.4 to +0.4 kJ/mole
and increases with increase in the water temperature. The hysteresis of transformation of the (H2O)280 cluster in the process of heating and cooling of water in the temperature range 273–280 K was detected. Series of energy
spectra of clusters in liquids at different temperatures are presented and discussed.
__________
Translated from Zhurnal Prikladnoi Spektroskopii, Vol. 72, No. 3, pp. 305–312, May–June, 2005. 相似文献
6.
Experiments are performed to determine the magnetic susceptibility of the icosahedral phase itself in the alloy Al62Cu25.5Fe12.5 in the temperature range 3.9–1100 K. A new regularity is observed — the curves of the temperature dependences of the susceptibility
and electrical conductivity are congruent.
Pis’ma Zh. éksp. Teor. Fiz. 69, No. 3, 206–210 (10 February 1999) 相似文献
7.
A. A. Sinchenko Yu. I. Latyshev A. P. Orlov A. A. Ivanov P. Monceau 《The European Physical Journal B - Condensed Matter and Complex Systems》2008,63(2):199-204
We have measured the Hall effect and the transverse
magnetoresistance in NbSe3 single crystals. In the liquid helium
temperature range we observed an absolute negative magnetoresistance
(NMR) — the value of the resistance under magnetic field being much
lower than that at zero field — in NbSe3 single crystals with a
thickness less than 5 μm with the magnetic field oriented in the
(b, c) plane. We show that this NMR effect is observed in the
magnetic field range in which the Hall constant changes its sign.
The results are qualitatively explained by the change of the surface
scattering contribution to the magnetoconductance in the magnetic
field range near the Hall voltage zero crossing. 相似文献
8.
E. Kuzmann Z. Homonnay A. Vértes I. Kirschner M. Gál K. Torkos B. Csákvári K. Solymos G. Horváth J. Bánkuti L. Korecz 《Hyperfine Interactions》1989,46(1-4):747-752
Eu and Sn Mössbauer spectroscopy was used to study EuBa2(Cu1-xSnx)3O7-y metallic oxides. The spectra are characteristic for EuIII and SnIV states in all cases. The existence of at least two different Sn states was determined by decomposition of the Sn Mössbauer spectra. These Sn sites can be associated with nonequivalent Cu sites replaced by Sn atoms in the perovskite type lattice. Anomalous changes were observed in the isomer shifts and area fractions in the spectra measured at room temperature and at 77 K. It can be interpreted assuming low temperature phase transformation and phonon softening. Time dependent changes were found in the Sn spectra recorded at 77 K in the case of highest Sn concentration. The observed changes are consistent with a transitional stage of the low temperature phase transformation. 相似文献
9.
Nanostructures P2O5-Al2O3-SiO2 glasses were prepared by sol-gel method. The glasses were characterized by XRD, FTIR and TG/DTA methods. The average pore
size of the glass was less than 3 nm as measured by N2 adsorption — desorption method. The thermal stability was measured as a function of decomposition temperature and weight
loss calculations. Proton conductivities of all samples increased with an increase in relative humidity (40–90 %), indicating
that continuous paths suitable for proton conduction were developed when glasses heat treated at 300 °C due to the adsorption
of water. The temperature dependence of the conductivity for all compositions increases with increasing temperature in the
range 30–90 °C with relative humidity 70 %. The overall conductivity was in the range 10−4–10−3 S/cm for compositions. 相似文献
10.
An apparatus is developed for investigating the dynamic deformation properties of cryoinsulation coatings in the temperature
range 8–293 K. One type of cryo-insulation material — polyurethane foam — is chosen as the object of investigation. Test measurements
on a polyurethane foam “pack” (metal substrate with a polyurethane foam coating) are performed at 0.01 Hz in the temperature
range 8–293 K. A jump in the temperature dependence of the dynamic shear modulus (by two orders of magnitude) is observed
in the temperature range 54–63 K. This feature is attributed to the solidification of the air present in the pores of the
polyurethane foam. Such a transition results in cementation of the polyurethane skeleton of the coating by the nitrogen and
oxygen “ice” that is formed.
Zh. Tekh. Fiz. 69, 116–118 (February 1999) 相似文献
11.
E. Veuhoff H. Bruch K. -H. Bachem P. Balk 《Applied Physics A: Materials Science & Processing》1980,23(1):37-40
Electron Hall mobilities were measured on a series of intentionally compensated vapor phase epitaxy (VPE) GaAs layers. Using
Sn and Zn as dopants, compensation ratiosK=(ND+NA)/(ND-NA) as high as 50 were obtained. Already for samples with the lowestK values the 300 K mobilities are higher than the 77 K values. In the range 20<T<100 [K] the data may be represented by μ∼T
α with α increasing from 0.6 to 1.1 with compensation. The experimental μ values are smaller than those predicted from current
models in all cases. It appears that scattering at ionized impurities is the dominant process also at temperatures well above
77 K, and that this scattering process is quantitatively underestimated in current models. 相似文献
12.
The present work describes the electrical conductivity of undoped CaTiO3 in terms of the electrical conductivity components corresponding to electrons, electron holes and ionic charge carriers in
the temperature range 973 K — 1323 K and under controlled oxygen partial pressure (10 Pa — 72 kPa). These data are considered
in terms of the transference numbers of the respective charge carriers. It appears that the ionic conductivity component assumes
maximum at the n-p transition when the ionic transfer number reaches 50% of the total conductivity value at 1323 K. The present
study also includes the determination of the activation energy of the conductivity component related to ions (162.1 kJ/mol),
electrons (134.2 kJ/mol) and electron holes (86.2 kJ/mol). The data obtained in this work indicate that undoped CaTiO3 exhibits a substantial level of ionic conduction that cannot be ignored in a quantitative analysis of electrical conductivity
data. 相似文献
13.
14.
N. Mohapatra K. K. Iyer E. V. Sampathkumaran 《The European Physical Journal B - Condensed Matter and Complex Systems》2008,63(4):451-454
We report a large entropy change (ΔS) below 300 K, peaking near T
C
= 220 K, due to isothermal change of magnetic field, for Gd4Co3, with a refrigeration capacity higher than that for, say, LaFe11.4Si1.6, ordering magnetically in the same temperature range. A noteworthy finding is that the isothermal magnetization is nonhysteretic
— an important criterion for magnetic refrigeration without loss. ΔS behavior is also compared with that of magnetoresistance. 相似文献
15.
A systematic analysis of the electrical response of the mixed system (1-x)CuI — xAg2MoO4 (0.15≤x≤0.55) over the temperature range 297 – 447 K in the 20 Hz — 1 MHz frequency domain has been reported. Relaxation
processes associated with individual compositions of this heterogeneous mixture of polycrystalline samples have been identified
through a combined analysis of modulus and impedance spectral formalisms. The detailed analysis of these relaxation processes
has indicated that AgI and Ag2MoO4 phases are the predominant sources of electric conduction in the case of samples in the composition region 0.33≤x≤0.55 whereas
in those samples having x<0.33, the presence of Cu2MoO4 phase in the mixture is found to make a definite contribution to their effective electric conduction. 相似文献
16.
E. Vitoratos S. Sakkopoulos Ch. Anestis J. Spiliotopoulos K. Govender D. S. Boyle P. O'Brien 《Ionics》2005,11(3-4):259-261
An experimental study of the temperature dependence of the d.c. conductivity σ as a function of temperature T in the range
from 80–360 K on nanocrystalline ZnO:Al films (Al3+ 2%) of thickness 500 nm prepared on glass microscope slides by a dip — coating method is presented. The electrical conductivity
σ, which at room temperature varied between 0.1 to 2.7 S/cm, increased almost linearly with T for all the samples. Measurements
of the Hall coefficient at room temperature and in a magnetic field of 1.2 T, gave RH=0.53 cm3C−1, from which a carrier concentration of n=1.18×1019 cm−3 and a carrier mobility of μ=1.40 cm2/Vs were deduced.
Paper presented at the Patras Conference on Solid State Ionics — Transport Properties, Patras, Greece, Sept. 14–18, 2004. 相似文献
17.
Temperature dependent119Sn Mössbauer effect measurements on AuSn4, PdSn4, and PtSn4 compounds in the temperature range of 10 to 295 K shows the presence of a Sn4+ site. Variation of thermal shift and the Debye-Waller factor shows that the mean-squared displacement (lnf) and mean-squared velocity (δ) of the tin nuclei are both characterized by a Debye temperature of 238, 255, and 304 K in AuSn4, PdSn4, and PtSn4, respectively. No discernible evidence of a phonon mediated structural transition is observed in the temperature range studied. 相似文献
18.
F. N. Gygax P. Birrer B. Hitti E. Lippelt A. Schenck M. Weber 《Hyperfine Interactions》1991,64(1-4):489-495
μ
+ SR measurements have been performed in a single crystal indium sample between 12 K and 300 K with a stroboscopic μSR spectrometer.
The muonic Knight shiftK
μ and the muonic depolarization rate σ were obtained for various angles θ between the tetragonal crystallinec-axis and the direction of the external field. The isotropic part ofK
μ is only weakly temperature dependent and is consistent with the estimated Pauli spin susceptibility value. At a temperature
of 12 K the angular dependence ofM
2 (the second moment of the field distribution at the muon, obtained from the measured σ(θ) values) allows a clear determination
of the muon location — the symmetric tetrahedral site. The observed anisotropicK
μ cannot be explained by the dipoles at the In atoms responsible for the bulk magnetic susceptibility but probably originates
from an anisotropic Pauli spin susceptibility. 相似文献
19.
A discussion of optical properties of mixed oxides In2O3—SnO2 system is presented. Film thickness, substrate temperature, composition (in molar %) and annealing have a profound effect
on the structure and optical properties of these films. Initially the increase in band gap with the increase of SnO2 content in In2O3 is due to the increase in carrier density as a result of donor electrons from tin. The decrease in band gap above the critical
Sn content is caused by the defects formed by Sn atoms, which act as carrier traps rather than electron donors. The increase
in band gap with film thickness is caused by the increase in free carrier density which is generated by (i) Sn atom substitution
of In atom, giving out one extra electron and (ii) oxygen vacancy acting as two electrons donor. The decrease in band gap
with substrate temperature and annealing is due either to the severe deficiency of oxygen, which deteriorate the film properties
and reduce the mobility of the carriers, or to the formation of indium species of lower oxidation state (In2+). 相似文献
20.
The following compounds have been synthesized: LaCu2Sn2, CeCu2Sn2, SmCu2Sn2 and SmNi2Sn2. By means of X-ray diffraction their structure was determined to be primitive tetragonal of CaBe2Ge2-type (space group P4/nmm) and the lattice parameters were obtained.119Sn Mössbauer measurements were performed in a temperature range between 4.2 K and 300 K. The temperature dependence of the Lamb-Mössbauer factor reveals considerable softening of lattice vibration modes below 160 K. Only SmCu2Sn2 orders magnetically above 4.2 K. 相似文献