硅漂移电子温度测量系统的研制

在磁约束聚变装置中，对等离子体电子温度的测量一般采用电子回旋辐射法（ECE）、汤姆逊散射法以及软X射线能谱法。其中软X射线（1～20keV）能谱法是一种传统的方法，它比汤姆逊散射法的测量误差小，且有较好的时空分辨；与电子回旋辐射法（ECE）相比较，时空分辨能力相近，但可作绝对测量，并且受超热电子和逃逸电子的影响较ECE小。在软X射线能谱法的应用中，过去使用Si（Li）探测器来探测软X射线能谱，Si（Li）探测器体积大，能量分辨和量子效率低，并且需要使用液氮冷却，大体积的杜瓦（通常35L）使探测器体积庞大，     

硅探测器的数字化脉冲形状甄别

介绍了利用硅探测器的脉冲形状甄别进行粒子鉴别的原理。详细叙述了基于数字化方法的脉冲形状甄别的实现。采样频率和位数是数字化方法的两个重要参数。对于硅探测器信号,采用100 MS/s,12 bit的Digitizer可以满足脉冲形状甄别法对时间分辨的要求。同时对该方法粒子鉴别的特征和能量阈值做了简要的分析和对比。粒子背面入射硅探测器的所得的阈值低于正面入射的情况。例如对于氖周围的同位素,背面入射情况的阈值约为100 MeV,为正面入射情况下鉴别阈值的二分之一,相当与ΔE-E方法中ΔE探测器厚度约为60 μm情况下的阈值。最后定性讨论了硅探测器的电阻率不均匀性和沟道效应对粒子鉴别性能的影响。In this paper Pulse Shape Discrimination(PSD) for silicon detector has been briefly introduced. The emerging digital method successfully applied to detector signal processing makes digital PSD method one of the most promising particle identification methods. Sampling frequency and the number of bits are two key parameters of digital method. For silicon detector signal, adopting 100 Ms/s, 12 bit Digitizer can satisfy the time resolution requirement of PSD method. The identification characteristic and energy threshold of this method have been discussed and compared with both front injection and rear injection cases. Energy threshold with rear injection usually is much lower than that with front injection. For example, around for Neon isotope energy threshold with rear injection is about 100 MeV which is only half of the threshold with front injection, also equivalent to thickness of about 60 μm silicon detector threshold in ΔE-E method. At the end the impact of silicon detector's resistivity nonuniformity and channel effect on the identification capacity of PSD method has been discussed in detail.     

基于标准探测器的硅单光子雪崩探测器探测效率测量

针对硅单光子雪崩探测器探测效率高准确度测量的需要,建立了一套溯源至标准探测器的硅单光子探测器探测效率测量装置。首先通过大动态范围高精度衰减产生光子数已知的准单光子源来校准探测器的探测效率,其次对影响探测效率测量的后脉冲概率和死时间进行了分析与测量,最后系统分析了各测量不确定度的来源,实现了硅单光子雪崩探测器在632.8nm波长处探测效率测量不确定度达到0.6%(k=2)。该装置采用超连续谱光源与单色仪组合输出单色光源,结合标准探测器,可根据需要实现硅单光子雪崩探测器宽波段内的探测效率自动化测量。     

双通道闪烁探测器探测脉冲中子技术

主要介绍了一种用于进行脉冲中子波形和产额测量的闪烁探测器，它由双套独立探测系统组成，可靠性高，在没有脉冲中子的场合，为了检验探测器各通道是否正常工作，在电子线路部分增加了脉冲产生单元，通过脉冲产生单元的定时脉冲控制发光二极管周期性发光，这样可以实时监控探测器工作是否正常，并且监控信号不影响正常的中子脉冲波形。     

低抖动小漂移开关脉冲发生器研究

开关脉冲发生器输出的稳定性是影响大口径电光开关可靠性的关键因素,而输出脉冲的触发延时和抖动则是其稳定性的两大重要指标。利用国产VE-4073氢闸管进行了分析和实验研究,通过采用直流加热氢闸管灯丝和氢储存器,以及精确、稳定的双脉冲触发技术,大幅减小了开关脉冲发生器触发延时的抖动和漂移,48 h内开关脉冲发生器输出漂移仅6.1 ns。     

低抖动小漂移开关脉冲发生器研究

开关脉冲发生器输出的稳定性是影响大口径电光开关可靠性的关键因素,而输出脉冲的触发延时和抖动则是其稳定性的两大重要指标。利用国产VE-4073氢闸管进行了分析和实验研究,通过采用直流加热氢闸管灯丝和氢储存器,以及精确、稳定的双脉冲触发技术,大幅减小了开关脉冲发生器触发延时的抖动和漂移,48 h内开关脉冲发生器输出漂移仅6.1 ns。     

沟槽型硅微结构中子探测器的蒙特卡罗模拟研究

采用蒙特卡罗模拟方法研究了微结构参数、填充致密度等因素对沟槽型微结构半导体中子探测器（MSND）性能的影响规律,并开展了沟槽型MSND的优化设计研究。研究表明,随着沟槽间距的增加,MSND的探测效率呈下降趋势;当沟槽间距固定时,存在最优的沟槽宽度使得探测效率最大化;沟槽深度越大,探测效率越高。沟槽宽度和沟槽间距为15 m和5 m是一对优化的参数组合,可保证较高的探测效率和较平稳的系统甄别阈-探测效率曲线。当系统甄别阈取300 keV时,沟槽宽度、间距和深度分别为15,5 m和200 m时的MSND热中子本征探测效率可达37.77%,与平面探测器相比提高了9.2倍;对137Cs源662 keV伽马射线的中子-伽马射线甄别比可达4.1103,与平面探测器相比提高了23.7倍。本工作从理论上证明了MSND可解决传统平面型半导体中子探测器探测效率低的难题,同时可保持半导体探测器中子-伽马射线甄别容易的特点。     

沟槽型硅微结构中子探测器的蒙特卡罗模拟研究

采用蒙特卡罗模拟方法研究了微结构参数、填充致密度等因素对沟槽型微结构半导体中子探测器(MSND)性能的影响规律,并开展了沟槽型MSND的优化设计研究。研究表明,随着沟槽间距的增加,MSND的探测效率呈下降趋势;当沟槽间距固定时,存在最优的沟槽宽度使得探测效率最大化;沟槽深度越大,探测效率越高。沟槽宽度和沟槽间距为15μm和5μm是一对优化的参数组合,可保证较高的探测效率和较平稳的系统甄别阈-探测效率曲线。当系统甄别阈取300keV时,沟槽宽度、间距和深度分别为15,5μm和200μm时的MSND热中子本征探测效率可达37.77%,与平面探测器相比提高了9.2倍;对137 Cs源662keV伽马射线的中子-伽马射线甄别比可达4.1×103,与平面探测器相比提高了23.7倍。本工作从理论上证明了MSND可解决传统平面型半导体中子探测器探测效率低的难题,同时可保持半导体探测器中子-伽马射线甄别容易的特点。     

用于n,γ混合场的新型脉冲中子探测器研究

新型脉冲中子探测器采用特殊工艺将两个PIN半导体组合而成.利用脉冲γ辐射研究了探测器对γ的响应；利用脉冲中子源研究了探测器对DT中了的响应，并与闪烁探测器进行了比较 .结果表明：脉冲中子探测器对脉冲γ辐射基本不灵敏，对脉冲中子辐射的灵敏程度依赖于中子辐射体，是一种用于n，γ混合脉冲辐射场中子测量的新型探测器. 关键词： 硅半导体 差分补偿 脉冲中子探测器 n γ混合场     

硅微条探测器的辐射损伤试验

测量了硅微条探测器在辐照前后的坪曲线、脉冲高度与偏置电压的关系，及辐照后的总漏电流和黑洞的大小.     

Surface passivation in n-type silicon and its application in silicon drift detector

Based on the surface passivation of n-type silicon in a silicon drift detector(SDD), we propose a new passivation structure of SiO2/Al2O3/SiO2 passivation stacks. Since the SiO2 formed by the nitric-acid-oxidation-of-silicon(NAOS)method has good compactness and simple process, the first layer film is formed by the NAOS method. The Al2O3 film is also introduced into the passivation stacks owing to exceptional advantages such as good interface characteristic and simple process. In addition, for requirements of thickness and deposition temperature, the third layer of the SiO2 film is deposited by plasma enhanced chemical vapor deposition(PECVD). The deposition of the SiO2 film by PECVD is a low-temperature process and has a high deposition rate, which causes little damage to the device and makes the SiO2 film very suitable for serving as the third passivation layer. The passivation approach of stacks can saturate dangling bonds at the interface between stacks and the silicon substrate, and provide positive charge to optimize the field passivation of the n-type substrate.The passivation method ultimately achieves a good combination of chemical and field passivations. Experimental results show that with the passivation structure of SiO2/Al2O3/SiO2, the final minority carrier lifetime reaches 5223 μs at injection of 5×10¹⁵ cm^-3. When it is applied to the passivation of SDD, the leakage current is reduced to the order of nA.     

Preliminary results for the design,fabrication,and performance of a backside-illuminated avalanche drift detector

The detection of low-level light is a key technology in various experimental scientific studies. As a photon detector, the silicon photomultiplier （SiPM） has gradually become an alternative to the photomultiplier tube （PMT） in many applications in high-energy physics, astroparticle physics, and medical imaging because of its high photon detection efficiency （PDE）, good resolution for single-photon detection, insensitivity to magnetic field, low operating voltage, compactness, and low cost. However, primarily because of the geometric fill factor, the PDE of most SiPMs is not very high; in particular, for those SiPMs with a high density of micro cells, the effective area is small, and the bandwidth of the light response is narrow. As a building block of the SiPM, the concept of the backside-illuminated avalanche drift detector （ADD） was first proposed by the Max Planck Institute of Germany eight years ago; the ADD is promising to have high PDE over the full energy range of optical photons, even ultraviolet light and X-ray light, and because the avalanche multiplication region is very small, the ADD is beneficial for the fabrication of large-area SiPMs. However, because of difficulties in design and fabrication, no significant progress had been made, and the concept had not yet been verified. In this paper, preliminary results in the design, fabrication, and performance of a backside-illuminated ADD are reported; the difficulties in and limitations to the backside-illuminated ADD are analyzed.     

基于热释电探测器的重频脉冲激光诊断

摘以热释电探测器的工作原理为基础,研究了热释电探测器对重频脉冲激光的瞬态响应特性,建立了热释电探测器对单脉冲激光辐照响应的工作模型,分析了影响探测器频率特性的主要因素。根据材料和结构参数模拟计算了实际应用中的响应模型。设计了信号检测电路并对其进行计算仿事。完成了探测器的频率响应、脉宽响应等实验测量,验证了热释电探测器用于高重频、窄脉冲激光能量测量的可行性。     

Energy‐dependent dead‐time correction in digital pulse processors applied to silicon drift detector's X‐ray spectra

Dead‐time effects in X‐ray spectra taken with a digital pulse processor and a silicon drift detector were investigated when the number of events at the low‐energy end of the spectrum was more than half of the total, at counting rates up to 56 kHz. It was found that dead‐time losses in the spectra are energy dependent and an analytical correction for this effect, which takes into account pulse pile‐up, is proposed. This and the usual models have been applied to experimental measurements, evaluating the dead‐time fraction either from the calculations or using the value given by the detector acquisition system. The energy‐dependent dead‐time model proposed fits accurately the experimental energy spectra in the range of counting rates explored in this work. A selection chart of the simplest mathematical model able to correct the pulse‐height distribution according to counting rate and energy spectrum characteristics is included.     

基于热释电探测器的重频脉冲激光诊断(英文)

以热释电探测器的工作原理为基础,研究了热释电探测器对重频脉冲激光的瞬态响应特性,建立了热释电探测器对单脉冲激光辐照响应的工作模型,分析了影响探测器频率特性的主要因素。根据材料和结构参数模拟计算了实际应用中的响应模型。设计了信号检测电路并对其进行计算仿真。完成了探测器的频率响应、脉宽响应等实验测量,验证了热释电探测器用于高重频、窄脉冲激光能量测量的可行性。     

HL-2A装置SDD软X射线能谱测量结果

Measurements of soft X-ray spectra during Electron Cyclotron Resonance Heating (ECRH) has been achieved on HL-2A tokamak using two independent silicon drift detector (SDD) systems. Electron temperatures are derived from the measured soft X-ray energy spectra. A comparison indicates that the results measured by SDD are consistent with ECE measurements. Experimental results of soft X-ray spectra measure- ment using SDD show that the increment of electron temperature is larger at z=0 than that at z = 16.4cm chord, so, we can conclude that the energy of ECW is deposited dominantly in the core of plasma and electron temperature profile become peaked during on-axis ECRH (B_T=2.4T). The statistic survey of ECRH discharges (2.41T ≤B_T≤2.43T,1.5×10¹⁹m^-3≤n_e≤2.5≤10¹⁹m^-3,300kW≤ECRH power≤600kW) shows that plasma electron temperature rises obviously during on-axis ECRH, especially, in the core of plasma (z=0). It has been observed that the on-axis ECRH can make electron temperature increase up to 30%～80% at z=0 chord and 15%～55% at z=-16.4cm chord.     

Development of large-area quadrant silicon detector for charged particles

The quadrant silicon detector, a kind of passivated implanted planar silicon detector with quadrant structure on the junction side, gained its wide application in charged particle detection. In this paper, the manufacturing procedure, performance test and results of the quadrant silicon detector developed recently at the China Institute of Atomic Energy are presented. The detector is about 300 μm thick with a 48 mm×48 mm active area. The leakage current under the full depletion bias voltage of -16 V is about 2.5 nA, and the rise time is better than 160 ns. The energy resolution for a 5.157 MeV α-particle is around the level of 1%. Charge sharing effects between the neighboring quads, leading to complicated correlations between two quads, were observed when α particles illuminated on the junction side. It is explained as a result of distortion of the electric field of the inter-quad region. Such an event is only about 0.6% of all events and can be neglected in an actual application.     

高功率太赫兹脉冲半导体探测器的分析与设计

设计了一种基于半导体热电子效应的0.14 THz高功率脉冲探测器.首先根据探测器的结构特点,分析了探测器的工作原理,并推导了探测器的相对灵敏度表达式.接着采用三维电磁场时域有限差分法,模拟计算了探测器的电压驻波比和线性区的相对灵敏度.在优化的结构参数下,探测器在0.14 THz波段的电压驻波比不大于1.3,相对灵敏度约为0.6 kW^-1,且在0.13—0.16 THz频带内波动不超过10%.然后讨论了焦耳热效应对探测器的影响,考察了太赫兹脉冲宽度与输出电压变化率的关系.最后对探测器的 关键词： 高功率太赫兹脉冲 探测器 热电子 灵敏度     

基于数字平板探测器的高能X射线成像实验研究

为了将数字平板探测器应用到高能X射线成像无损检测,通过实验研究了平板探测器的噪声和动态范围。设计了基于平板探测器的高能X射线成像系统。通过实验研究了电子直线加速器对数字平板探测器图像采集的束流触发同步问题。     

A prototype silicon detector system for space cosmic-ray charge measurement

A readout electronics system used for space cosmic-ray charge measurement for multi-channel silicon detectors is introduced in this paper, including performance measurements. A 64-channel charge sensitive ASIC (VA140) from the IDEAS company is used. With its features of low power consumption, low noise, large dynamic range, and high integration, it can be used in future particle detecting experiments based on silicon detectors.