利用透射电镜衬度像变化判定位错环类型及注氢纯铁中形成的位错环分析

本文分两部分,第一部分研究了利用透射电镜衬度像变化判定材料中位错环类型的方法,即采用所谓inside-outside方法来判断位错环为空位型位错环或间隙型位错环. 第二部分讨论了加速器注氢纯铁在673—773 K时效后形成的位错环的类型. 关键词： 透射电镜 空位型位错环 间隙型位错环 氢     

表面效应对铁<100>间隙型位错环的影响

在材料辐照损伤过程中,间隙型位错环的形成及动力学行为严重影响材料在辐照条件下的服役行为.在常用的以体心立方铁为基的合金材料中,1/2<111>和<100>是两种主要的位错环,其对辐照损伤的影响一直都是核材料领域研究的热点之一.在之前的研究中,人们对{111}面与单个1/2<111>位错环的相互作用进行了深入研究,发现表面对位错环性质确实有重要的影响.采用分子动力学方法,在原子尺度详细研究了另一个重要的表面铁{100}面对<100>间隙型位错环动力学过程的影响.模拟发现位错环伯格斯矢量与表面法线方向的关系、距表面的深度、位错环之间的相互作用以及温度等,都对位错环与表面的相互作用产生重要影响,其中,表面作用下的伯格斯矢量的演化以及<100>位错环在此过程中的一维运动首次被发现.基于这些模拟结果,就<100>位错环对表面辐照损伤结构的影响进行详细地研究,给出<100>位错环对表面凹凸结构的贡献,这些结果为理解辐照过程中材料表面的演化提供一种可能的解释.     

铝中气泡在电子束辐照下的异常放热现象

在室温下,利用离子加速器对纯铝透射样品分别注入He⁺,Ne⁺和Ar⁺三种惰性气体离子,通过透射电子显微镜原位观察分析了纯铝中三种气体气泡在电子束辐照下形貌及电子衍射花样的变化.实验表明,在200 keV电子束辐照下,三种惰性气体气泡均会合并长大,亮度逐渐增强,最终破裂,气泡内部产生许多约几个纳米的黑色斑点衬度像,选区电子衍射花样由单晶斑点衍射花样变为多晶衍射环.这一现象的原因可能是气泡在电子束辐照过程中发生了放热反应,使气泡附近铝熔化后再结晶产生多晶,从而在电子衍射花样中观察到了多晶衍射环.然而,氦气泡在80 keV电子束辐照下氦气泡形貌和选区电子衍射花样保持不变,辐照后衍射花样中无多晶衍射环产生;氦氩混合气体气泡在200 keV电子束辐照下气泡形貌和选区电子衍射花样同样保持不变;这可能与电子束能量和气泡内气体压力有关.     

氢离子辐照纯钒中形成的位错环

钒合金作为聚变堆候选材料, 其辐照损伤行为一直是关注的重点. 研究辐照时形成的位错环的性质, 其意义在于揭示纯钒中辐照空洞的长大机理. 这种机理表现为不同类型位错环对点缺陷吸收的偏压不同, 从而影响金属的辐照肿胀. 本文利用加速器对纯钒薄膜样品进行氢离子辐照, 然后, 利用透射电镜的inside-outside方法分析氢离子辐照所形成的位错环的类型. 结果表明, 在氢离子辐照纯钒中没有发现柏氏矢量b=<110>的位错环, 只有柏氏矢量b=1/2<111>和b=<110>的位错环, 这两种位错环的惯性面处于{110}-{112}之间. 能确定性质的位错环全部为间隙型位错环, 未发现空位型位错环.     

中子辐照铝的微观结构变化

研究了中子辐照后铝的微观结构和力学性能的变化。发现中子辐照使铝的硬度有了一定的提高,同时在铝的内部产生了大量细小的位错环。The change of microstructure and mechanical property in neutron irradiated aluminum was studied. It is found that neutron irradiation increased the hardness of the aluminum and caused the formation of many small dislocation loops in the aluminum.     

注氢铁基二元合金中辐照位错环演化及退火温度影响研究

本文基于注氢纯铁和铁基二元合金(Fe-3%Cr、Fe-1.4%Ni和Fe-1.4%Mn,质量分数)开展常规透射电镜(200 kV)的原位表征观察,揭示了材料中辐照位错环的形态、尺寸演化行为及退火温度影响,并依据辐照损伤演化理论、退火过程中位错环平均尺寸变化推断得到空位型位错环形成温度的范围.注氢纯铁中空位型位错环的形成温度(T_c)约为500℃;添加Ni可使T_c降低至～450℃,添加Cr可使T_c升高至600℃以上,而Mn的作用与Cr相似,亦可使T_c升高.注氘实验和热脱附谱分析进一步表明,纯铁和铁基二元合金中空位型位错环的形成温度受氢同位素与空位结合、释放过程影响.合金元素Ni对氢同位素与空位的结合、释放有促进作用,故导致T_c降低;而Cr和Mn均对氢同位素与空位的结合、释放产生抑制作用,故导致T_c升高.本文展示的有关合金元素对空位型位错环形成温度影响的研究将有助于更深刻理解铁基合金体系中损伤结构演化和辐照肿胀产生机理.     

电子束辐照下的注氘铝的结构变化

利用离子加速器在室温下对纯铝注入氘离子或氢离子,然后在透射电镜中对注氘铝或注氢铝中的气泡进行电子束辐照,发现在电子束辐照下气泡会长大、破裂.随着气泡的变化,选区电子衍射花样中出现了表示多晶存在的衍射环.这表明电子束辐照气泡时,发生某种放热现象,从而使附近的铝先熔化后再凝固,由单晶变为多晶.     

不同温度下bcc-Fe中螺位错滑移及其与½[11(1)]位错环相互作用行为

采用分子动力学方法模拟研究了不同温度下bcc-Fe中螺位错滑移行为和螺位错与?[11(1)]位错环相互作用机制.结果表明,螺位错在低温2 K剪切应力下主要沿((2)11)面滑移;随温度逐渐升高到823 K,它容易发生交滑移,该交滑移在((1)11)和((2)11)面之间交替进行,因此随温度升高,临界剪切应力逐渐降低.当...     

聚变材料钨辐照后退火形成的位错环特性及inside-outside衬度分析

对纯钨透射电镜薄膜样品在400℃进行了58 keV、1×10¹⁷ cm^-2(约0.1 dpa)的氘离子辐照,辐照后进行了900℃/1 h的退火处理.离子辐照产生了平均尺寸为(11.10±5.41)nm,体密度约为2.40×10²² m^-3的细小位错环组织,未观察到明显的空洞组织.辐照后退火造成了位错环尺寸的长大和体密度的下降,分别为(18.25±16.92) nm和1.19×10²² m^-3.通过透射电镜的衍射衬度分析,判断辐照后退火样品中的位错环主要为a/2<111>类型位错环.通过“一步法” inside-outside衬度分析判断位错环为间隙型位错环.辐照后退火还造成了较大位错环之间接触融合,形成不规则形状的大型位错环.此外,退火后样品中还观察到了尺寸为1—2 nm的细小空洞组织.     

单晶铝在拉压循环过程中形成的两种位错组态与成因

研究了［１１０］和［１００］取向高纯铝单晶在６×１０^－4拉压疲劳应变振幅条件下的应力σ_m和内耗Ｑ^－１的变化，对不同阶段的位错组态作了详细的透射电子显微镜观察，并利用滑移几何的观点予以解释 关键词：     

Evolution of dislocation loops in austenitic stainless steels implanted with high concentration of hydrogen

Abstract

It has been found that under certain conditions, hydrogen retention would be strongly enhanced in irradiated austenitic stainless steels. To investigate the effect of the retained hydrogen on the defect microstructure, AL-6XN stainless steel specimens were irradiated with low energy (100 keV) H₂⁺ so that high concentration of hydrogen was injected into the specimens while considerable displacement damage dose (up to 7 dpa) was also achieved. Irradiation induced dislocation loops and voids were characterised by transmission electron microscopy. For specimens irradiated to 7 dpa at 290 °C, dislocation loops with high number density were found and the void swelling was observed. At 380 °C, most of dislocation loops were unfaulted and tangled at 7 dpa, and the void swellings were observed at 5 dpa and above. Combining the data from low dose in previous work to high dose, four stages of dislocation loops evolution with hydrogen retention were suggested. Finally, molecular dynamics simulation was made to elucidate the division of large dislocation loops under irradiation.     

Precipitate assemblies formed on dislocation loops in aluminium-silver-copper alloys

The precipitation microstructure of the γ′ (AlAg₂) intermetallic phase has been examined in aluminium-silver-copper alloys. The microstructure developed in an Al-0.90at.%Ag-90at.Cu alloy was significantly different from that reported for binary Al-Ag alloys. The orientation relationship between the matrix and precipitate was unchanged; however, the γ′ phase formed assemblies with a two-dimensional, open arrangement of precipitates. Each such assembly contained two variants of the γ′ phase alternately arranged to form a faceted elliptical unit. The θ′ (Al₂Cu) phase formed on these assemblies after further ageing. Each assembly was formed via repeated precipitation of the γ′ phase on dissociated segments of a single dislocation loop. This faceted elliptical assembly has not been previously reported for the γ′ precipitate. The difference between the precipitation behaviour of the γ′ phase in Al-Ag and Al-Ag-Cu alloys was attributed to copper modifying the as-quenched defect structure of the matrix. The formation of faceted elliptical γ′ phase assemblies clarifies earlier observations on the precipitate number density and mechanical properties of aluminium-silver-copper alloys.     

Introducing dislocation climb by bulk diffusion in discrete dislocation dynamics

We report a method to incorporate dislocation climb controlled by bulk diffusion in a three-dimensional discrete dislocation dynamics (DDD) simulation for fcc metals. In this model we couple the vacancy diffusion theory to the DDD in order to obtain the climb rate of the dislocation segments. The capability of the model to reproduce the motion of climbing dislocations is examined by calculating several test-cases of pure climb-related phenomena and comparing the results with existing analytical predictions and experimental observations. As test-cases, the DDD is used to study the activation of Bardeen–Herring sources upon the application of an external stress or under vacancy supersaturation. Loop shrinkage and expansion due to vacancy emission or absorption is shown to be well described by our model. In particular, the model naturally describes the coarsening of a population of loops having different sizes.     

Non-singular dislocation loops in gradient elasticity

Using gradient elasticity, we give in this Letter the non-singular fields produced by arbitrary dislocation loops in isotropic media. We present the ‘modified’ Mura, Peach–Koehler and Burgers formulae in the framework of gradient elasticity theory.     

The interaction between a screw dislocation and a wedge-shaped crack in one-dimensional hexagonal piezoelectric quasicrystals

Based on the fundamental equations of piezoelasticity of quasicrystal material,we investigated the interaction between a screw dislocation and a wedge-shaped crack in the piezoelectricity of one-dimensional hexagonal quasicrystals.Explicit analytical solutions are obtained for stress and electric displacement intensity factors of the crack,as well as the force on dislocation.The derivation is based on the conformal mapping method and the perturbation technique.The influences of the wedge angle and dislocation location on the image force are also discussed.The results obtained in this paper can be fully reduced to some special cases already available or deriving new ones.     

Copper indium diselenide: crystallography and radiation-induced dislocation loops

Copper indium diselenide (CIS) is a prime candidate as the absorber layer in solar cells for use in extraterrestrial environments due to its good photovoltaic efficiency and ability to resist radiation damage. While CIS-based devices have been tested extensively in the laboratory using electron and proton irradiation, there is still little understanding of the underlying mechanisms which give rise to its radiation hardness. To gain better insight into the response of CIS to displacing radiation, transmission electron microscope samples have been irradiated in situ with 400?keV Xe ions at the Intermediate Voltage Electron Microscope facility at Argonne National Laboratory, USA. At room temperature, dislocation loops were observed to form and grow with increasing fluence. These loops have been investigated using g ?·? b techniques and inside/outside contrast analysis. They have been found to reside on {112} planes and to be interstitial in nature. The Burgers vector were calculated as b ?=?1/6 ?221?. The compositional content of these interstitial loops was found to be indistinguishable from the surrounding matrix within the sensitivity of the techniques used. To facilitate this work, experimental electron-diffraction zone-axis pattern maps were produced and these are also presented, along with analysis of the [100] zone-axis pattern.