Investigation of the dielectric,optical and photorefractive properties of Sb-doped Sn<Subscript>2</Subscript>P<Subscript>2</Subscript>S<Subscript>6</Subscript> crystals

In this work we report results on electro-physical, optical and photorefractive investigations for Sb-doped Sn₂P₂S₆ crystals. The crystals are obtained by two methods: the vapour-transport technique and the Bridgman technique using stoichiometric Sn₂P₂S₆ composition with different amounts of antimony in the initial compound. The good optical quality of the crystals obtained with the Bridgman technique is underlined. The dependences of the photorefractive two-beam coupling coefficient and the grating build-up time are investigated at the wavelength of 633 nm. It is found that the sample doped with 1.5% of Sb is characterized by an optimal combination of the main photorefractive parameters exhibiting a fairly high two-beam coupling coefficient (up to 20 cm⁻¹) and a short response time (1.3 ms) that is the shortest among all the previously studied Sn₂P₂S₆ crystals in the red spectral region.     

Wave mixing in nominally undoped Sn<Subscript>2</Subscript>P<Subscript>2</Subscript>S<Subscript>6</Subscript> at high light intensities

The intensity dependence of the photorefractive response of Sn₂P₂S₆ is studied for the Kr⁺-laser wavelength of 647 nm and pump-beam intensities of up to 10 W/cm². A considerable enhancement of the two-beam coupling gain factor with increasing intensity at a grating spacing of ≃1 μm is attributed to a light-induced increase of the effective trap density. The large gain reached at high intensities is applied for the build up of a double phase conjugate mirror with a sub-millisecond switch-on time.     

Properties of thermally fixed holograms in photorefractive LiNbO<Subscript>3</Subscript>:Zn:Fe crystals

We have investigated the properties of thermally fixed holograms in LiNbO₃ crystals doped with the optical damage inhibitor Zn as well as the photorefractive Fe dopants. Time decays of fixed holograms at different temperatures showed a single thermally activated process with an activation energy of ∼1.08 eV. We have also studied the effect of an external electric field on the diffraction efficiency of these holograms. Results analysis has provided a new method to determine the photovoltaic field of the samples as well as the effective concentration of photorefractive traps.     

Photorefractive response and optical damage of LiNbO<Subscript>3</Subscript> optical waveguides produced by swift heavy ion irradiation

The photorefractive behaviour of a novel type of optical waveguides fabricated in LiNbO₃ by swift heavy ion irradiation is investigated. First, the electro-optic coefficient r ₃₃ of these guides that is crucial in the photorefractive effect is measured. Second, two complementary aspects of the photorefractive response are studied: (i) recording and light-induced and dark erasure of holographic gratings; (ii) optical beam degradation in single-beam configuration. The main photorefractive parameters, recording and erasing time constants, maximum refractive-index change and optical damage thresholds are determined.     

Anisotropy of the dielectric permittivity of Sn<Subscript>2</Subscript>P<Subscript>2</Subscript>S<Subscript>6</Subscript> measured with light-induced grating techniques

We apply, for the first time to our knowledge, photorefractive grating spectroscopy to obtain not-yet-known data on the anisotropy of the dielectric permittivity of Sn₂P₂S₆. Two independent techniques are used, one based on measurements of the amplitude of the space-charge field grating as a function of grating spacing and the other based on measurements of the grating decay time, also as a function of grating spacing. Both techniques provide close values for the anisotropy, which appears to be well pronounced, a ratio ε_xx/ε_zz≈4 is revealed for two of the three independent components of the dielectric tensor. Our data also allow us to conclude that the charge mobility is nearly isotropic in the same plane, μ_xx/μ_zz≈1. Received: 2 December 2002 / Published online: 26 March 2003 RID="*" ID="*"Corresponding author. Fax: +380-44/265-2359, E-mail: odoulov@iop.kiev.ua     

Laser emission in Nd:YVO<Subscript>4</Subscript> channel waveguides at 1064 nm

In this work, we report 1064 nm laser emission in Nd:YVO₄ channel waveguides fabricated by carbon implantation. Typical threshold pump powers (∼808 nm) were ≥45 mW. Maximum conversion efficiency was 11.5% (29.6% slope efficiency), and up to 9 mW of signal was delivered. Sample lengths of 4 mm were sufficient to completely absorb the pump power. The special spectral characteristics of this material such as broad absorption band and superior cross sections compared to the YAG crystal makes it suitable for developing compact sources to be integrated in optoelectronic devices.     

Magnetotransport properties of La<Subscript>0.67</Subscript>Ca<Subscript>0.33</Subscript>MnO<Subscript>3</Subscript> with different grain sizes

The magnetotransport and magnetoresistive (MR) properties of manganese-based La_0.67Ca_0.33MnO₃ perovskite with different grain sizes are reported. The electrical resistivity was measured as a function of temperature in magnetic fields of 0.5 and 1 T. The insulator–metal transition temperature, T _IM, shifted to a higher temperature with the application of the magnetic field. In zero field, T _IM is almost constant (∼271 K) for all samples except for the sample with the largest grain size, where T _IM=265 K. The temperature dependence of resistivity was fitted with several equations in the metallic (ferromagnetic) region and the insulating (paramagnetic) region. The density of states at the Fermi level, N(E _F), and the activation energy of electron hopping were estimated by fitting the resistivity versus temperature curves. The ρ–T ² curves are nearly linear in the metallic regime, but the ρ–T ^2.5 curves exhibit a deviation from linearity. The variable range hopping model and small polaron hopping model fit the data well in the high-temperature region, indicating the existence of the Jahn–Teller distortion that localizes the charge carriers. MR was found to increase with an increase in the magnetic field, an effect which is attributed to the intergrain spin tunneling effect.     

Infrared absorption spectra of pure and doped YAl<Subscript>3</Subscript>(BO<Subscript>3</Subscript>)<Subscript>4</Subscript> single crystals

Several weak absorption bands have been observed in the optical absorption spectra of pure and rare-earth-doped YAl₃(BO₃)₄ single crystals in the 3350– 3650 cm⁻¹ wave number region. Two of them, peaking at about 3377 cm⁻¹ and 3580 cm⁻¹ in the 8 K spectra, appear in most of the samples. They are tentatively attributed to the stretching mode of OH⁻ ions incorporated in the crystal during the growth. An additional absorption band at about 5250 cm⁻¹ at 8 K has also been detected in almost all samples. The temperature and polarization dependences of these bands, and their possible origin, are discussed.     

Spectroscopic properties of Nd<Superscript>3+</Superscript>:CaNb<Subscript>2</Subscript>O<Subscript>6</Subscript> crystal

The absorption spectra, fluorescence spectrum and fluorescence decay curve of Nd³⁺ ions in CaNb₂O₆ crystal were measured at room temperature. The peak absorption cross section was calculated to be 6.202×10⁻²⁰ cm² with a broad FWHM of 7 nm at 808 nm for E//a light polarization. The spectroscopic parameters of Nd³⁺ ions in CaNb₂O₆ crystal have been investigated based on Judd-Ofelt theory. The parameters of the line strengths Ω _t are Ω ₂=5.321×10⁻²⁰ cm²,Ω ₄=1.734×10⁻²⁰ cm²,Ω ₆=2.889×10⁻²⁰ cm². The radiative lifetime, the fluorescence lifetime and the quantum efficiency are 167 μs, 152 μs and 91%, respectively. The fluorescence branch ratios are calculated to be β ₁=36.03%,β ₂=52.29%,β ₃=11.15%,β ₄=0.533%. The emission cross section at 1062 nm is 9.87×10⁻²⁰ cm².     

Large optical nonlinearity in CaCu<Subscript>3</Subscript>Ti<Subscript>4</Subscript>O<Subscript>12</Subscript> thin films

CaCu₃Ti₄O₁₂ (CCTO) thin films were successfully prepared on LaAlO₃ substrates by pulsed laser deposition technique. We measured the nonlinear optical susceptibility of the thin films using Z-scan method at a wavelength of 532 nm with pulse durations of 25 ps and 7 ns. The large values of the third-order nonlinear optical susceptibility, χ ⁽³⁾, of the CCTO film were obtained to be 2.79×10⁻⁸ esu and 3.30×10⁻⁶ esu in picosecond and nanosecond time regimes, respectively, which are among the best results of some representative nonlinear optical materials. The origin of optical nonlinearity of CCTO films was discussed. The results indicate that the CCTO films on LaAlO₃ substrates are promising candidate materials for applications in nonlinear optical devices.     

Magnetotransport and magnetocaloric effect in Ho<Subscript>2</Subscript>In

The magnetotransport and magnetic properties of the binary intermetallic compound Ho₂In have been investigated. Clear signature of long range ferromagnetic order in the resistivity and the magnetization data at T_C = 85 K is observed. A further spin reorientation type transition is also apparent in our measured data at around T_t = 32 K. The sample exhibits negative magnetoresistance (peak value of –14% at 5 T) over a wide temperature range that extends well above T_C. Substantially large magneto-caloric effect is also observed in the sample (maximum value of –8.5 J kg^-1K^-1 for 0 → 5 T), which peaks around the T_C of the sample. The observed magnetoresistance and magnetocaloric effect are related to the suppression of spin disorder by an external magnetic field. Ho₂In can be an interesting addition to the list of rare-earth based magnetic refrigerant materials showing magneto-caloric effect across a second order phase transition.     

Thermo-optic coefficients of monoclinic KLu(WO<Subscript>4</Subscript>)<Subscript>2</Subscript>

The three thermo-optic coefficients of the biaxial laser host KLu(WO₄)₂ are measured at 633 nm by a deflection method. Their values at 300 K amount to ∂ n _g /∂ T=−7.4×10⁻⁶ K⁻¹; ∂ n _m /∂ T=−1.6×10⁻⁶ K⁻¹ and ∂ n _p /∂ T=−10.8×10⁻⁶ K⁻¹. Nearly athermal propagation directions are found for polarizations along the N _m and N _p dielectric axes.     

Hall effect and negative magnetoresistance in thin crystals of NbSe<Subscript>3</Subscript>

We have measured the Hall effect and the transverse magnetoresistance in NbSe₃ single crystals. In the liquid helium temperature range we observed an absolute negative magnetoresistance (NMR) — the value of the resistance under magnetic field being much lower than that at zero field — in NbSe₃ single crystals with a thickness less than 5 μm with the magnetic field oriented in the (b, c) plane. We show that this NMR effect is observed in the magnetic field range in which the Hall constant changes its sign. The results are qualitatively explained by the change of the surface scattering contribution to the magnetoconductance in the magnetic field range near the Hall voltage zero crossing.     

Single-frequency Ti:Er:LiNbO3 distributed Bragg reflector waveguide laser with thermally fixed photorefractive cavity

The first single-frequency Ti:Er:LiNbO₃ distributed Bragg reflector waveguide laser with two thermally fixed photorefractive gratings as resonator mirrors is reported. The optically pumped (λ_p=1480 nm,120-mW incident power) laser emits up to 1.1 mW at λ_s=1561.1 nm. The threshold pump power is 70 mW. Received: 7 June 2001 / Published online: 30 October 2001     

Electrical switching studies on As<Subscript>40</Subscript>Te<Subscript>60-x</Subscript>Se<Subscript>x</Subscript> and As<Subscript>35</Subscript>Te<Subscript>65-x</Subscript>Se<Subscript>x</Subscript> glasses

The I–V characteristics of bulk As₄₀Te_60-xSe_x and As₃₅Te_65-xSe_x glasses have been studied with a current sweep of 0–18 mA-0, over a wide range of compositions (4≤x≤22). All the glasses studied showed a threshold electrical switching behaviour. The number of switching cycles withstood by the samples has been found to depend on the ON-state current. It is seen that the switching voltages increase with increase in selenium content. Further, the switching voltages are found to be almost independent of the thickness of the sample (d), in the range 0.18–0.3 mm. Also, the switching voltages and the number of switching cycles withstood by the samples are found to decrease with temperature. Received: 6 November 2002 / Accepted: 8 November 2002 / Published online: 29 January 2003 RID="*" ID="*"Corresponding author. Fax: +91-80/360-0135, E-mail: sasokan@isu.iisc.ernet.in     

Physical property characterization of bulk MgB<Subscript>2</Subscript> superconductor

We report synthesis, structure/micro-structure, resistivity under magnetic field [ρ(T)H], Raman spectra, thermoelectric power S(T), thermal conductivity κ(T), and magnetization of ambient pressure argon annealed polycrystalline bulk samples of MgB₂, processed under identical conditions. The compound crystallizes in hexagonal structure with space group P6/mmm. Transmission electron microscopy (TEM) reveals electron micrographs showing various types of defect features along with the presence of 3–4 nm thick amorphous layers forming the grain boundaries of otherwise crystalline MgB₂. Raman spectra of the compound at room temperature exhibited characteristic phonon peak at 600 cm^-1. Superconductivity is observed at 37.2 K by magnetic susceptibility χ(T), resistivity ρ(T), thermoelectric power S(T), and thermal conductivity κ(T) measurements. The power law fitting of ρ(T) give rise to Debye temperature (Θ_D) at 1400 K which is found consistent with the theoretical fitting of S(T), exhibiting Θ _D of 1410 K and carrier density of 3.81 × 10²⁸/m³. Thermal conductivity κ(T) shows a jump at 38 K, i.e., at T_c, which was missing in some earlier reports. Critical current density (J_c) of up to 10⁵ A/cm² in 1–2 T (Tesla) fields at temperatures (T) of up to 10 K is seen from magnetization measurements. The irreversibility field, defined as the field related to merging of M(H) loops is found to be 78, 68 and 42 kOe at 4, 10 and 20 K respectively. The superconducting performance parameters viz. irreversibility field (H_irr) and critical current density J_c(H) of the studied MgB₂ are improved profoundly with addition of nano-SiC and nano-diamond. The physical property parameters measured for polycrystalline MgB₂ are compared with earlier reports and a consolidated insight of various physical properties is presented.     

Structural and dehydriding properties of Ca(BH<Subscript>4</Subscript>)<Subscript>2</Subscript>

We have investigated the structural and dehydriding properties of Ca(BH₄)₂. It was found that Ca(BH₄)₂ undergoes a structural phase transformation from an orthorhombic low-temperature (LT) modification into a tetragonal high-temperature (HT) modification between 433 K and 523 K. The amount of hydrogen desorbed from Ca(BH₄)₂ during the pressure–composition (p–c) isotherm measurement was 5.9 mass%. This hydrogen desorption is caused by the partial dehydrogenation of Ca(BH₄)₂ accompanied by the formation of CaH₂ and orthorhombic intermediate phases.     

Photorefractive waveguides in oxide crystals: fabrication, properties, and applications

3 , LiTaO₃, BaTiO₃, KNbO₃, Sr_xBa_1-xNb₂O₆ (0.25≤x≤0.75, SBN), and Bi₁₂(Si,Ti,Ge)O₂₀ (BSO, BTO, BGO) waveguides are discussed. Furthermore, the suitability of photorefractive waveguides for nonlinear optical components is demonstrated in some examples. Received: 21 April 1998/Revised version: 28 May 1998     

Electronic structure of A15-type compounds: V<Subscript>3</Subscript>Co,V<Subscript>3</Subscript>Rh,V<Subscript>3</Subscript>Ir and V<Subscript>3</Subscript>Os

Band structure and Fermi surfaces of the A₃B compounds V₃Co, V₃Rh, V₃Ir and V₃Os are calculated in FP-LAPW calculations. From V₃Co to the V₃Os compound one observes a decrease of the overlap for d-states from both V and B atoms; the center of gravity of the d-band for V moves upwards, while for the B-atom it moves toward lower energies. Hence, despite the band widening, a weakening of interactions takes place throughout this series, which leads to a lattice expansion as experimentally observed. The bonding mechanism in these compounds is found to be dominated by the lower energy d-states. Comparatively, the DOS at E_F does not change appreciably between these compounds, except for V₃Os, where a sharp peak is observed at E_F. This feature leads to the highest electronic heat-capacity coefficient γ (2.31 ) in this compound, which otherwise possesses the smallest Bulk modulus (209.05 GPa). In V₃Os, for whom no report has been found, a stronger admixture between p-states from both metals near E_F is observed, and the Os d-states form a common d-band with the V d-states between 0.4–0.6 Ry. A stronger s–s hybridization is observed for V₃Co, which is in the source of the fact that this compound has an anomalously large quadrupole interaction and exhibits a positive Knight shift.