Conductivity behavior of the new pyrophosphate NaNi<Subscript>1.5</Subscript>P<Subscript>2</Subscript>O<Subscript>7</Subscript>

NaNi_1.5P₂O₇ compound was obtained by the classic ceramic method at high temperature and was characterized by XRD. It was found to crystallize in the triclinic symmetry with the P-1 space group. The electrical conductivity and modulus characteristics of the system have been investigated in the temperature and the frequency range 586–723 K and 200 Hz–1 MHz, respectively, by means of impedance spectroscopy. The ac conductivity for grain contribution was interpreted using the universal Jonscher’s power law. The exponent s decreased with increasing temperature revealing that the conduction inside the studied material is insured by the correlated barrier hopping (CBH) model. The conduction mechanism was explained with the help of Elliot’s theory, and the Elliot’s parameters were determined. Thermodynamic parameters such as the free energy for dipole relaxation ΔG, the enthalpy ΔH, and the change in entropy ΔS have been calculated.     

Anisotropic properties and conduction mechanism of TlInSe2 chain semiconductor

TlInSe₂ chain crystals were prepared using the modification of the Bridgman technique. The grown crystals were identified by scanning electron microscopy (SEM), energy dispersive spectroscopy (EDX), and X-ray diffraction (XRD). We investigate the anisotropy of transport properties for the first time for TlInSe₂ crystals. Temperature dependence of the dc electrical conductivity, Hall coefficient, Hall mobility, and charge carrier concentration were investigated in the temperature range 184–455 K. The conduction mechanism of TlInSe₂ crystals was studied, and measurements revealed that the dc behavior of the grown crystals can be described by Mott’s variable range hopping (VRH) model in the low temperature range, while it is due to thermoionic emission of charge carriers over the chain boundaries above 369 K. The Mott temperature, the density of states at the Fermi level, and the average hopping distance are estimated in the two crystallographic directions. The temperature dependence of the ac conductivity and the frequency exponent, s, is reasonably well interpreted in terms of the correlated barrier-hopping CBH model.     

Li<Superscript>+</Superscript> ion conductivity and transport properties of LiYP<Subscript>2</Subscript>O<Subscript>7</Subscript> compound

A lithium yttrium diphosphate LiYP₂O₇ was prepared by a solid-state reaction method. Rietveld refinement of the X-ray diffraction pattern suggests the formation of the single phase desired compound with monoclinic structure at room temperature. The infrared and Raman spectrum of this compound was interpreted on the basis of P₂O₇ ^4? vibrations. The AC conductivity was measured in the frequency range from 100 to 10⁶ Hz and temperatures between 473 and 673 K using impedance spectroscopy technique. The obtained results were analyzed by fitting the experimental data to the equivalent circuit model. The Cole–Cole diagram determined complex impedance for different temperatures. The angular frequency dependence of the AC conductivity is found to obey Jonscher’s relation. The temperature dependence of σ _AC could be described in terms of Arrhenius relation with two activation energies, 0.87 eV in region I and 1.36 eV in region II. The study of temperature variation of the exponent(s) reveals two conduction models: the AC conduction dependence upon temperature is governed by the correlated barrier hopping (CBH) model in region I (T < 540 K) and non-overlapping small polaron tunneling (NSPT) model in region II (T > 540 K). The near value of activation energies obtained from the equivalent circuit and DC conductivity confirms that the transport is through ion hopping mechanism dominated by the motion of the Li⁺ ion in the structure of the investigated material.     

Electrical conduction and thermodynamic properties of K2NiP2O7

The pyrophosphate K₂NiP₂O₇ has been synthesized by the classic ceramic method and characterized by X-ray diffraction, solid-state ³¹P magic angle spinning (MAS) NMR, and IR and electrical impedance spectroscopy. The solid-state ³¹P MAS NMR, performed at 121.49 MHz, shows two isotropic resonances at ?17.66 and ?19.94 ppm, revealing the existence of two phosphorus environments in the structure. The electrical conductivity and dielectric properties have been investigated in the frequency and the temperature range of 200 Hz–1 MHz and 603–728 K, respectively. The frequency dependence of the conductivity is interpreted using the augmented Jonscher relation. The close values of activation energies obtained from the analysis of hopping frequency and dc conductivity imply that the transport is through ion hopping mechanism. The charge carrier concentration in the investigated sample has been evaluated using the Almond–West formalism and shown to be independent of temperature. Thermodynamic parameters such as the free energy of activation ΔF, the enthalpy ΔH, and the change in entropy ΔS have been calculated.     

AC conductivity and dielectric behavior of bulk Furfurylidenemalononitrile

AC conductivity and dielectric behavior for bulk Furfurylidenemalononitrile have been studied over a temperature range (293–333 K) and frequency range (50–5×10⁶ Hz). The frequency dependence of ac conductivity, σ_ac, has been investigated by the universal power law, σ_ac(ω)=Aω^s. The variation of the frequency exponent (s) with temperature was analyzed in terms of different conduction mechanisms, and it was found that the correlated barrier hopping (CBH) model is the predominant conduction mechanism. The temperature dependence of σ_ac(ω) showed a linear increase with the increase in temperature at different frequencies. The ac activation energy was determined at different frequencies. Dielectric data were analyzed using complex permittivity and complex electric modulus for bulk Furfurylidenemalononitrile at various temperatures.     

Electrical properties and conductivity mechanism of LiCuFe2(VO4)3

This paper reports conduction mechanism in LiCuFe₂(VO₄)₃ over a wide range of temperatures (300 to 712 K) and frequencies (209 Hz to 5 MHz). The DC conductivity of the material is thermally activated with activation energy about 0.66 eV. In LiCuFe₂(VO₄)₃, the electrical conductivity is probably due to the hopping of alkali lithium ion along the channel [001]. Temperature dependence of AC conductivity is studied at different frequencies. Frequency exponent s is found to decrease with increase in temperature. The results have been explained on the basis of correlated barrier hopping (CBH) model. Numerical calculations agree well with experimental results. The results show that the frequency and temperature-dependent behavior of AC conductivity of the studied materials are predominantly due to single polaron hopping.     

Electrical properties and conduction mechanism in the sodium nickel diphosphate

The Na_3.6Ni_2.2(P₂O₇)₂ compound was obtained by the conventional solid-state reaction. The sample was characterized by X-ray powder diffraction and vibrational and impedance spectroscopy. The AC electrical conductivity and the dielectric relaxation properties of this compound have been investigated by means of impedance spectroscopy measurements over a wide range of frequencies and temperatures, 209 kHz–1 MHz and 564–729 K, respectively. Dielectric data were analyzed using complex electrical modulus M* at various temperatures. The peak positions ω _m of M″ spectra shift toward higher frequencies with increase in temperature. The AC conductivity data fulfill the power law. Application of the correlated barrier hopping model revealed that the ionic conduction takes place by single-polaron and bipolaron hopping processes.     

The dc and ac properties of potassium trioxalatoferrate (III) trihydrate

The complex potassium trioxalatoferrate (III) trihydrate {K₃(Fe(C₂O₄)₃ · 3H₂O)} was synthesised and characterised by energy dispersion X-ray fluorescence (XRF) and X-ray diffraction (XRD). The electrical and dielectric properties of the complex pellet were studied by ac- and dc-techniques in room temperature and in a temperature range of 293–373 K. The data of the ac conductivity as a function of frequency in a frequency range of 1–100 kHz follow the correlated barrier hopping CBH model and the parameters of the model were determined and connecting them with the optical properties. The temperature dependence of dc conductivity shows that the semiconducting behaviour of conduction phenomenon in the complex is realised by hopping mechanism between localised states and the minimum hopping distance was determined. High relative permittivity of about 30 at 100 kHz was obtained for the complex, which can find technological applications like alternative for the SiO₂ insulator in MOS devices.     

Electrical characterization of porous La-doped BaSnO<Subscript>3</Subscript> using impedance spectroscopy

A few compositions in the system Ba_1???x La _x SnO₃ (x?=?0.00, 0.01, 0.05, and 0.10) have been synthesized via the solid state ceramic route. The synthesized powders have been characterized using X-ray diffraction, scanning electron microscopy, energy-dispersive X-ray analysis, Raman spectroscopy, Fourier transformation infrared, thermogravimetrical analysis, and differential thermal analysis techniques. The powder X-ray diffraction pattern of the samples confirms the formation of a single-phase solid solution only up to 0.50?≤?x. It was found that all the samples have a cubic crystal structure. The electrical properties of La-modified BaSnO₃ were studied using ac impedance spectroscopy technique over a wide range of temperatures (50–650 °C) in the frequency range of 10 Hz–13 MHz. The complex impedance plots above 300 °C show that total impedance is due to the contributions of grain and grain boundaries. The resistance of these contributions has been determined. Variation of these resistances with temperature shows the presence of two different regions with different slopes. The nature of the variation of conductivity of the grain and grain boundaries is different in different regions. Based on the value of activation energy, it is proposed that conduction via hopping of doubly ionized oxygen vacancies (V_O ^??) is taking place in the temperature region of 300–450 °C, whereas in the temperature region of 450–650 °C, it is due to proton, i.e., OH^? ions, hopping.     

Analysis of the electrical properties of p–n GaAs homojunction under dc and ac fields

In this work, the n-type GaAs films were grown on p-type GaAs single crystalline substrate by metal organic chemical vapor deposition (MOCVD). The temperature dependence of the current density–voltage (J–V) characteristics of n-GaAs/p-GaAs homojunction contacts were measured in the temperature range 293–413 K. These characteristics showed a rectifying behavior consistent with a potential barrier formed at the interface. The forward current density–voltage characteristics under low voltage biasing were explained on the basis of thermionic emission mechanism. The high values of ideality factor (n) may be ascribed to the presence of an interfacial layer. Analysis of the experimental data under the reverse voltage biasing suggests a dominant mechanism was found to be a Schottky effect. The impedance properties and the alternating current (ac) conductivity of n-GaAs/p-GaAs homojunction were investigated as a function of frequency and temperature. The ac conductivity was found to obey the universal power law. The variation of the exponent s with the temperature suggested that the conduction mechanism is an overlapping large-polaron tunneling (OLPT) model associated with correlated barrier hopping (CBH) model at the higher temperature.     

Anisotropy of the hopping conductivity in TlGaSe2 single crystals

The temperature dependences of the conductivities parallel and perpendicular to the layers in layered TlGaSe₂ single crystals are investigated in the temperature range from 10 K to 293 K. It is shown that hopping conduction with a variable hopping length among localized states near the Fermi level takes place in TlGaSe₂ single crystals in the low-temperature range, both along and across the layers. Hopping conduction along the layers begins to prevail over conduction in an allowed band only at very low temperatures (10–30 K), whereas hopping conduction across the layers is observed at fairly high temperatures (T?210 K) and spans a broader temperature range. The density of states near the Fermi level is determined, N _F=1.3×10¹⁹eV·cm³)^?1, along with the energy scatter of these states J=0.011 eV and the hopping lengths at various temperatures. The hopping length R along the layers of TlGaSe₂ single crystals increases from 130 Å to 170 Å as the temperature is lowered from 30 K to 10 K. The temperature dependence of the degree of anisotropy of the conductivity of TlGaSe₂ single crystals is investigated.     

Ac conductivity study of lithium and potassium diphosphate LiK3P2O7 using impedance spectroscopy

In this work, a LiK₃P₂O₇ ceramic material was prepared by the solid-state reaction method and identified by X-ray diffractometry. The dielectric properties, impedance characteristics, and modulus were studied over a range of frequency (200 Hz to 5 MHz) and temperature (615–708 K). The frequency and temperature dependence of dielectric permittivity, dielectric loss, and electric modulus is studied. The frequency analysis of modulus properties showed a distribution of relaxation times. Conductivity plots against frequency at a higher frequency suggested the response obeying the universal power law. The temperature behavior of the frequency exponents shows that the correlated barrier hopping CBH model is well adapted to this material. The activation energy associated with the impedance relaxation and the electric modulus spectra is close to the activation energy for dc conductivity indicating the similar nature of relaxation and conductivity. Thermodynamic parameters such as free energy of activation, enthalpy, and entropy have been calculated.     

Thermopower in the region of hopping conduction in TlNiS<Subscript>2</Subscript>

Samples of the composition TlNiS₂ in the hexagonal system with the unit cell parameters a=12.28 Å, c=19.32 Å, and ρ=6.90 g/cm³ are synthesized. The results of the investigation into the electrical and thermoelectrical properties of TlNiS₂ samples in the temperature range 80–300 K indicate that TlNiS₂ is a p-type semiconductor. It is found that, at temperatures ranging from 110 to 240 K, TlNiS₂ samples in a dc electric field possess variable-range-hopping conduction at the states localized in the vicinity of the Fermi level. The density of localized states near the Fermi level is determined to be N_F=9×10²⁰ eV^?1 cm^?3, and the scatter of the states is estimated as J≈2×10^?2 eV. In the temperature range 80–110 K, TlNiS₂ exhibits activationless hopping conduction. At low temperatures (80–240 K), the thermopower of TlNiS₂ is adequately described by the relationship α(T)=A+BT, which is characteristic of the hopping mechanism of charge transfer. In the case when the temperature increases to the temperature of the onset of intrinsic conduction with the activation energy ΔE=1.0 eV, there arise majority intrinsic charge carriers of both signs. This leads to an increase in the electrical conductivity σ and, at the same time, to a drastic decrease in the thermopower α; in this case, the thermopower is virtually independent of the temperature.     

Experimental and theoretical study of AC electrical conduction mechanisms of Organic–inorganic hybrid compound Bis (4-acetylanilinium) tetrachlorocadmiate (II)

A new organic–inorganic bis (4-acetylaniline) tetrachlorocadmate [C₈H₁₀NO]₂[CdCl₄] can be obtained by slow evaporation at room temperature and characterized by X-ray powder diffraction. It crystallized in an orthorhombic system (Cmca space group). The material electrical properties were characterized by impedance spectroscopy technique in the frequency range from 209 Hz–5 MHz and temperature 413 to 460 K. Besides, the impedance plots show semicircle arcs at different temperatures and an electrical equivalent circuit has been proposed to interpret the impedance results. The circuits consist of the parallel combination of a resistance (R), capacitance (C) and fractal capacitance (CPE). The variation of the exponent s as a function of temperature suggested that the conduction mechanism in Bis (4-acetylanilinium) tetrachlorocadmiate compound is governed by two processes which can be ascribed to a hopping transport mechanism: correlated barrier hopping (CBH) model below 443 K and the small polaron tunneling (SPT) model above 443 K.     

Electrical properties and conduction mechanisms in La2/3Ca1/3MnO3 thin films prepared by pulsed laser deposition on different substrates

Perovskite manganite La_2/3Ca_1/3MnO₃ thin films were directly grown on MgO(100), Si(100) and glass substrates by pulsed laser deposition. From the XRD patterns, the films are found to be polycrystalline, single-phase orthorhombic. The metal–insulator transition temperature is 209 K for LCMO/MgO, 266 K for LCMO/Si and 231 K for film deposited on the glass substrate. The conduction mechanism in these films is investigated in different temperature regimes. Low-temperature resistivity data below the phase transition temperature (T _P) have been fitted with the relation \( \rho = \rho_{0} + \rho_{2} T^{2} + \rho_{4.5} T^{4.5} \) , indicating that the electron–electron scattering affects the conduction of these materials. The high-temperature resistivity data (T > T _P) were explained using variable-range hopping (VRH) and small-polaron hopping (SPH) models. Debye temperature values are 548 K for LCMO/Cg, 568 K for LCMO/Si and 508 K for LCMO/MgO thin films. In all thin films, the best fitting in the range of VRH is found for 3D dimension. The density of states near the Fermi level N (E _F) for LCMO/MgO is lower due to the prominent role of the grain boundary in LCMO/MgO and increase in bending of Mn–O–Mn bond angle, which decreases the double exchange coupling of Mn³⁺–O²–Mn⁴⁺ and in turn makes the LCMO/MgO sample less conducting as compared to the other films.     

Nanosized rare earth cobaltite LaCoO<Subscript>3</Subscript> synthesized by urea combustion method

The structural, magnetic, and electrical properties of nano- and bulk samples of LaCoO₃, prepared by a urea combustion method, are investigated in this paper. The structures of phases, calcined at different temperatures, were refined in two different space groups rhombohedral R-3c and monoclinic I2/a, and a good agreement was obtained between the observed and calculated XRD patterns. Magnetic measurements reveal that the magnetic susceptibility increases with reduction in particle size. It is observed that there are two types of mechanisms which govern the conduction in different temperature ranges of these samples, and no single law of conduction fits the entire range of temperature. In high temperature range (200–300 K), Arrhenius law fits well, while in the low temperature region (100–200 K), the conduction is governed by Efros-Shklovskii’s (ES) hopping.     

Electrical properties of thermally evaporated nickel-dimethylglyoxime thin films

Thin Bis-(dimethylglyoximato)nickel(II) [Ni(DMG)₂] films of amorphous and crystalline structures were prepared by vacuum deposition on Si (P) substrates. The films were characterised by X-ray fluorescence and X-ray diffraction. The constructed Al/Ni(DMG)₂/Si(P) metal-insulator-semiconductor devices were characterised by the measurement of the gate-voltage dependence of their capacitance and ac conductance, from which the surface states density D_it of insulator/semiconductor interface and the density of the fixed charges in the oxide were determined. The ac electrical conduction and dielectric properties of the Ni(DMG)₂-Silicon structure were studied at room temperature. The data of the ac measurements of the annealed films follow the correlated barrier-hopping CBH mode, from which the fundamental absorption bandgap, the minimum hopping distance, and other parameters of the model were determined.     

Electrical properties of a-antimony selenide

This paper reports conduction mechanism in a-Sb₂Se₃ over a wide range of temperature (238 to 338 K) and frequency (5 Hz to 100 kHz). The d.c. conductivity measured as a function of temperature shows semiconducting behaviour with activation energy ΔE=0.42 eV. Thermally induced changes in the electrical and dielectric properties of a-Sb₂Se₃ have been examined. The a.c. conductivity in the material has been explained using modified CBH model. The band conduction and single polaron hopping is dominant above room temperature. However, in the lower temperature range the bipolaron hopping dominates.     

Dielectric characterization of semiconducting ZnPc films sandwiched between Gold or Aluminum electrodes

The dependencies of complex dielectric functions (the dielectric constant, ε ₁, and the dielectric loss, ε ₂), on frequency and temperature of zinc phthalocyanine (ZnPc) thin films sandwiched between either gold or aluminum Ohmic-electrode contacts have been investigated in the temperature range of 93–470 K and frequency range 0.1–20 kHz. It is found that both values of ε ₁ and ε ₂ decrease with increasing frequency and increase with decreasing temperature. The rate of change depends greatly on the temperature and frequency ranges under consideration. Around room temperature, neither ε ₁ nor ε ₂ show any appreciable change through the whole range of frequencies. Thus, the dielectric dispersion is found to include of both dipolar and interfacial polarizations. The dependencies of both dielectric functions on frequency at different temperatures were found to follow a universal power law of the form ω ⁿ , where the index 0<n≤?1. This indicates that the correlated barrier hopping (CBH) model is a suitable mechanism to describe the dielectric behavior in ZnPc films. Furthermore, the results of the dielectric response indicate that polarization in these films could be in the form of non-Debye polarization. However, the Debye polarization can be traced below room temperature. The obtained results of the relaxation-time, τ, dependency on temperature have shown that a thermally-activated process may be dominated in ZnPc thin films conduction at high temperatures. Partial phase transition (from α- to β-phase) has been observed around 400 K in molecular relaxation-time, τ, and optical dielectric constant, ε _∞. Arrhenius behavior has been observed for all the dielectric loss and conductivity relaxation-times above room temperature and their activation energies are explained and reported. The optical dielectric constant ε _∞ was found to increase with temperature.     

Structure,thermal behavior,and dielectric properties of new cesium hydrogen sulfate arsenate: Cs<Subscript>2</Subscript>(HSO<Subscript>4</Subscript>)(H<Subscript>2</Subscript>AsO<Subscript>4</Subscript>)

Synthesis and structural characterization by single-crystal X-ray diffraction method, thermal behavior, and electrical proprieties are given for a new compound with a superprotonic phase transition Cs₂(HSO₄)(H₂AsO₄). The title compound crystallizes in the monoclinic system with the P2₁/n space group. The structure contains zigzag chains of hydrogen-bonded anion tetrahedra that extend in the [010] direction. Each tetrahedron is additionally linked to a tetrahedron neighboring chain to give a planar structure with hydrogen-bonded sheets lying parallel to (10ī). The existence of O–H and (S/As)–O bonds in the structure at room temperature has been confirmed by IR and Raman spectroscopy in the frequency ranges 4000–400 cm^?1and 1200–50 cm^?1, respectively. Differential scanning calorimetry analysis of the superprotonic transition in Cs₂(HSO₄)(H₂AsO₄) showed that the transformation to high temperature phase occurs at 417 K by one-step process. Thermal decomposition of the product takes place at much higher temperatures, with an onset of approximately 534 K. The superprotonic transition was also studied by impedance and modulus spectroscopy techniques. The conductivity in the high temperature phase at 423 K is 1.58 × 10^?4 Ω^?1 cm^?1, and the activation energy for the proton transport is 0.28 eV. The conductivity relaxation parameters associated with the high disorder protonic conduction have been examined from analysis of the M”/M”_max spectrum measured in a wide temperature range. Transport properties of this material appear to be due to the proton hopping mechanism.