Acoustoplastic effect and internal friction of aluminum single crystals in various deformation stages

The dependences of the acoustoplastic effect and the internal friction on the oscillatory strain amplitude are measured in various deformation stages of low-purity aluminum single crystals. It is discovered that the acoustoplastic effect is observed not only in the macroscopic plastic region of the stress-strain diagram, but also for microplastic deformation in the “elastic” loading and unloading stages. The sign of the effect reverses during unloading. An increase in the strain rate leads to enhancement of the acoustoplastic effect and the absorption of the energy of ultrasonic vibrations causing this effect with a frequency of about 100 kHz. It is concluded that the acoustoplastic effect observed during both macro-and microplastic deformation is caused by the irreversible high-speed motion of dislocations through the long-range stress field of the other dislocations after breaking through the Cottrell atmospheres. Fiz. Tverd. Tela (St. Petersburg) 39, 1794–1800 (October 1997)     

New mechanism of the spin-galvanic effect

A mechanism of the spin-galvanic effect associated with spin-dependent scattering is proposed. The electrical current in a system of spin-polarized two-dimensional carriers is induced due to interference of spin-preserving scattering processes and spin relaxation processes. The spin-galvanic effect is studied for heterostructures with the Elliott-Yafet and Dyakonov-Perel spin relaxation mechanisms. The proposed contribution to the spin-galvanic current may be dominant in A₃B₅ asymmetric quantum wells.     

Recombination mechanism of the spin-galvanic effect

The mechanism responsible for the spin-galvanic effect is considered. According to this mechanism, the current is generated as a result of the difference between the rates of spontaneous radiative transitions of charge carriers with oppositely directed spins. This difference arises when a spatially uniform nonequilibrium spin orientation of thermalized electrons (holes) is provided by any known method.     

激光束低频位相误差叠加规律研究

 用随机位相屏模拟光学元件产生的低频位相误差，并用RMS位相梯度对低频位相误差进行统计量化，通过对激光束传输过程进行模拟，对低频位相误差的叠加规律有了新发现，并对位相误差叠加规律进行了修改，为位相校正提供了理论上的依据；通过对光束聚焦过程进行研究，得到了低频位相误差影响光束焦斑尺寸的初步规律；并在此基础上提出了一种光束质量控制的新方法。     

Non-Newtonian effect and normal stress effect in critical fluids

The non-newtonian effect and the normal stress effect in classical fluids near critical points under shear flow are considered with the renormalization group method.     

Phonon mechanism of the antiferromagnetic photogalvanic effect

The phonon mechanism of generation of photogalvanic current in centroantisymmetric tetragonal antiferromagnets with magnetic symmetry excluding the occurrence of a toroidal momentum is considered. It is demonstrated that photocurrent can be caused by scattering of charge carriers by phonons with a polarization other than longitudinal. The polarization of the phonons involved in scattering is determined by the long-range part of the electron-phonon interaction induced by polarization of the lattice due to the magnetoelectric effect. Conditions are given for the observation of photogalvanic current in easy-axis antiferromagnets.     

On the mechanism of residual photomechanical effect

The results of investigation of the residual photomechanical effect (PME) in a monocrystalline n-Si sample at various temperatures by the method of microindentation following exposure to light are considered. It is shown that a decrease in the residual PME is an exponential function of time and temperature.     

Degradation characteristics and mechanism of PMOSFETs under NBT--PBT--NBT stress

Degradation characteristics of PMOSFETs under negative bias temperature--positive bias temperature--negative bias temperature (NBT--PBT--NBT) stress conditions are investigated in this paper. It is found that for all device parameters, the threshold voltage has the largest shift under the first NBT stress condition. When the polarity of gate voltage is changed to positive, the shift of device parameters can be greatly recovered. However, this recovery is unstable. The more severe degradation appears soon after reapplication of NBT stress condition. The second NBT stress causes in linear drain current to degrade greatly, which is different from that of the first NBT stress. This more severe parameter shift results from the wear out of silicon substrate and oxide interface during the first NBT and PBT stress due to carrier trapping/detrapping and hydrogen related species diffusion.     

巨电流变效应及其机理

文章介绍了一种全新的电流变材料，即一种具有巨电流变(giant electro-rheological，简称GER)效应的纳米颗粒电流变液．之所以称之为“巨”，是因为此类材料的电流变效应远远突破了通常理论所预测到的“上限”，其剪切强度超过100kPa．同时文章作者还发现，此类电流变效应与外加电场呈线性变化关系，而非通常的二次方关系．用所提出的“表面极化饱和”模型圆满地解释了GER效应的实验结果．     

On the Higgs mechanism and stress functions in the translational gauge theory of dislocations

In this Letter we discuss the Higgs mechanism in the linear and static translational gauge theory of dislocations. We investigate the role of the Nambu-Goldstone field and the Proca field in the dislocation gauge theory. In addition, we give the constitutive relations for (homogeneous) anisotropic, hemitropic and isotropic materials and also stress function tensors for the gauge theory of dislocations.     

Kinetic mechanism of the electroplastic effect in metals

A new mechanism of electroplastic deformation is proposed, which is based on nonequilibrium fluctuations of dislocation vibrations due to the interaction between dislocations and hot electrons. It is shown that, when an electric current flows through a metal, the average energy of dislocation vibrations differs from that corresponding to the lattice temperature. As a result, the frequency of fluctuation-induced jumps of dislocations over obstacles increases.     

The effect of the forget-remember mechanism on spreading

We introduce a new mechanism—the forget-remember mechanism into the spreading process. Equipped with such a mechanism an individual is prone to forget the “message" received and remember the one forgotten, namely switching his state between active (with message) and inactive (without message). The probability of state switch is governed by linear or exponential forget-remember functions of history time which is measured by the time elapsed since the most recent state change. Our extensive simulations reveal that the forget-remember mechanism has significant effects on the saturation of message spreading, and may even lead to a termination of spreading under certain conditions. This finding may shed some light on how to control the spreading of epidemics. It is found that percolation-like phase transitions can occur. By investigating the properties of clusters, formed by connected, active individuals, we may be able to justify the existence of such phase transitions.     

On the mechanism of the photographic effect of ultrasound

In this paper we propose an explanation for the mechanism of mapping an ultrasonic field on uniformly-lit photographic plates during development. This mechanism is essentially due to the concentration of the developer at the nodes of the standing waves formed by the incidence and reflection of the sound waves on the photographic plate. The phenomenon is analogous to that of the concentration of cork filings in a Kundt tube. We also present the experiments that led us to the above explanation.     

On the mechanism of the photodomain effect in ferroelectrics

The influence of nonequilibrium electrons on the domain structure and switching of ferroelectrics (photodomain effect) has been investigated in ferroelectric crystals and ceramics. In the present paper, this effect is observed and explained as a result of the domain walls screening in frame ofYshibashi-Takagi theory.     

倒装芯片塑料球栅阵列封装器件在外应力下的失效机理

倒装芯片塑料球栅阵列(FC-PBGA)封装形式独特而被广泛应用, 分析研究其在实际应用过程中, 在高温、电、水汽等多种综合环境应力条件作用下的失效机理对提高其应用可靠性有重要意义. 本文对0.13 μm 6层铜布线工艺的FC-PBGA FPGA器件, 通过暴露器件在以高温回流焊过程中的热-机械应力为主的综合外应力作用下的失效模式, 分析与失效模式相对应的失效机理. 研究结果表明, FC-PBGA器件组装时的内外温差及高温回流焊安装过程中所产生的热-机械应力是导致失效的根本原因, 在该应力作用下, 芯片上的焊球会发生再熔融、桥接相邻焊球致器件短路失效; 芯片与基板之间的填充料会发生裂缝分层、倒装芯片焊球开裂/脱落致器件开路失效; 芯片内部的铜/低k互连结构的完整性受损伤而影响FC-PBGA器件的使用寿命.     

TiO2和SiO2薄膜应力的产生机理及实验探索

对最常用的TiO2和SiO2薄膜应力, 包括应力模型、应力测试方法和不同实验条件下的应力测试结果作了研究.基于曲率法模型,对TiO2和SiO2单层膜和多层膜进行了实验测试,得到了一些有价值的结果,特别是离子辅助淀积和基板温度等工艺参数对薄膜应力的影响.提出了薄膜聚集密度是应力的重要因素,低聚集密度产生张应力,而高聚集密度产生压应力.在多层膜中通过调节工艺参数,适当地控制张应力或压应力,可使累积应力趋向于零.     

Microscopic mechanism of the cage effect in simple liquids

Atomic motions in a soft-core liquid are classified by molecular dynamics simulation into subgroups which are characterized by the number of atoms surrounding a central atom. It is found that the rigidly and lifetime of the microstructure of the cage depend on the local environment around the central atom.     

New mechanism of the schoch effect in nonmagnetic dielectrics

A new type of a linear relation between the components of the magnetic field vector and those of the elastic strain tensor (a dynamic piezomagnetic interaction) is proposed. This relation is irrespective of the crystal symmetry and of the presence of a magnetic structure in the dielectric medium. This leads to anomalies in the reflection of a beam of shear bulk waves incident from the depth of the nonmagnetic dielectric medium on either its mechanically free surface or its slip boundary with a semibounded magnetic medium.     

Nonequilibrium dynamic mechanism for allosteric effect

Allosteric regulation is often viewed as thermodynamic in nature. However, protein internal motions during an enzymatic reaction cycle can slow the hoping processes over numerous potential barriers. We propose that regulating molecules may function by modifying the nonequilibrium protein dynamics. The theory predicts that an enzyme under the new mechanism has a different temperature dependence, waiting time distribution of the turnover cycle, and dynamic fluctuation patterns with and without an effector. Experimental tests of the theory are proposed.