Induced transparency by intersubband plasmon coupling in a quantum well

We study coupling of two intersubband plasmons associated with dipole-allowed cascading transitions in a quantum well. We show that the coupling can lead to the disappearance of the lower-energy resonance accompanied by an anticrossing behavior. Such coupling induced anomalies are of collective and resonant nature and provide the first example of Coulomb interaction induced transparency. Our numerical results from a microscopic theory are confirmed by an analytical model.     

Two-electron linear intersubband light absorption in a biased quantum well

We point out a novel manifestation of many-body correlations in the linear optical response of electrons confined in a quantum well. Namely, we demonstrate that along with the conventional absorption peak at a frequency omega close to the intersubband energy delta, there exists an additional peak at frequency h omega approximately = 2delta. This new peak is solely due to electron-electron interactions, and can be understood as excitation of two electrons by a single photon. The actual peak line shape is comprised of a sharp feature, due to excitation of pairs of intersubband plasmons, on top of a broader band due to absorption by two single-particle excitations. The two-plasmon contribution allows us to infer intersubband plasmon dispersion from linear absorption experiments.     

High-temperature all-optical intersubband quantum well Terahertz switch

In this article an asymmetric intersubband quantum well structure as a high temperature terahertz (THz) optical switch is proposed. In our proposed structure the incoming low power energy photon (THz control signal) causes an optical switching. In this structure we introduce an optical terahertz switch based on coherent population trapping (CPT) phenomena. In the presence of electromagnetic THz field, quantum interference between the terahertz control field and short-wavelength probe field under appropriate condition, the medium becomes transparent (zero absorption) for the probe field. So the absorption and refraction characteristic of optical probe field can be modified with THz radiation. Therefore this idea is suitable for all – optical terahertz switching.     

Electric-field dependence of the intersubband optical absorption in a semiconductor quantum well

We present theoretical results of intersubband linear optical absorption in the conduction band of a GaAsAlGaAs quantum well with an applied electric field taking into account the field dependent linewidth. Our analysis is based on the one electron density matrix formulation with intrasubband relaxation processes due to polar optical phonon scattering and tunneling of electrons. We show that (a) for an increasing electric field the absorption peak corresponding to the transition of states 1 → 2 is shifted higher in energy and (b) the peak amplitude increases if the Fermi level is fixed and decreases if the electron density in the well is fixed when an increasing electric field is applied. The linewidth broadening also reduces the peak absorption amplitude.     

Electric field effects on intersubband transitions in quantum well structures

We report on a Raman scattering study of the electric-field dependence of c₀ → c₁ intersubband transitions of electrons in a 264 Å GaAs- Al_0.3Ga_0.7As quantum-well structure. The measured Stark shifts are in very good agreement with theoretical predictions. The intensity of the intersubband peak increases rapidly with applied field due to parity-mixing. In contrast to the enhanced broadening shown by excitation resonances, the width of c₀ → c₁ is nearly independent of the field. This feature is attributed to effects of structural disorder.     

Ballistic effects and intersubband excitations in multiple quantum well structures

We have studied the transport properties of electrons in asymmetric quantum well structures upon far-infrared optical excitation of carriers from the lowest subband into the continuum. Here the photocurrent consists of a coherent component originating from ballistic transport upon excitation, and of an incoherent part associated with asymmetric diffusion and relaxation processes, which occur after the coherence has been lost. The signature of the coherent contribution is provided by a sign reversal of the photocurrent upon changing the excitation energy. This sign reversal arises from the energy-dependent interference between continuum states, which have a twofold degeneracy characterized by positive and negative momenta. The interference effect also allows us to estimate the coherent mean free path ( nm at 77 K). In specifically designed device structures, we use both the coherent and incoherent components in order to achieve a pronounced photovoltaic infrared response for detector applications.     

Capture dynamics and far-infrared response in photovoltaic quantum well intersubband photodetectors

Recent progress in photovoltaic quantum well intersubband photodetectors (QWIP) makes these devices suitable for high-performance imaging and heterodyne detection. We report on investigations concerning the basic physics of the transport mechanism, the dynamical behavior, and the further optimization of these structures. GaAs/AlAs/AlGaAs double-barrier QWIPS designed for 3-5 μm wavelength operation provide an interesting model system to study the dynamical aspects of the photovoltaic response. We find strong evidence that carrier transfer across the AlAs barriers mainly occurs due to Γ-X intervalley scattering, even for AlAs layer thicknesses of 1-2 nm. We also discuss experimental results on photovoltaic QWIPs operating in the 8-12 μm regime. In these structures, photovoltaic operation is achieved using a combination of single-barrier quantum wells with built-in space-charge fields. We report on a photovoltaic QWIP with a cutoff energy of 118 meV and a zero-bias detectivity of 2.5×10⁹ cm√Hz/W, which is only three times less than the detectivity of a photoconductive QWIP with the same cutoff energy.     

Optically pumped GaN/AlGaN quantum well intersubband terahertz laser

We propose an optically pumped nonpolar GaN/AlGaN quantum well (QW) active region design for terahertz (THz) lasing in the wavelength range of 30 μm～ 40 μm and operating at room temperature. The fast longitudinal optical (LO) phonon scattering in GaN/AlGaN QWs is used to depopulate the lower laser state, and more importantly, the large LO phonon energy is utilized to reduce the thermal population of the lasing states at high temperatures. The influences of temperature and pump intensity on gain and electron densities are investigated. Based on our simulations, we predict that with a sufficiently high pump intensity, a room temperature operated THz laser using a nonpolar GaN/AlGaN structure is realizable.     

An optically pumped GaN/AlGaN quantum well intersubband terahertz laser

We propose an optically pumped nonpolar GaN/AlGaN quantum well(QW) active region design for terahertz(THz) lasing in the wavelength range of 30 μm～ 40 μm and operating at room temperature.The fast longitudinal optical(LO) phonon scattering in GaN/AlGaN QWs is used to depopulate the lower laser state,and more importantly,the large LO phonon energy is utilized to reduce the thermal population of the lasing states at high temperatures.The influences of temperature and pump intensity on gain and electron densities are investigated.Based on our simulations,we predict that with a sufficiently high pump intensity,a room temperature operated THz laser using a nonpolar GaN/AlGaN structure is realizable.     

Linear and nonlinear intersubband optical absorptions in an asymmetric rectangular quantum well

The linear and nonlinear intersubband optical absorptions in Al_xlGa_1-xlAs/GaAs/Al_xr Ga_1-xrAs asymmetric rectangular quantum well are studied within the framework of the density matrix formalism. We have calculated the electron energy levels and the envelope wave functions using the effective mass approach. In addition, we have obtained an expression for saturation intensity. It is shown that the parameters such as asymmetry and width of potential well not only shift the peak positions in absorption spectrum but also considerably modify their height. These results suggest that the absorption process can be easily controlled by the structure parameters of an asymmetric rectangular quantum well. Also, the incident optical intensity has a great effect on the total absorption spectrum. We have seen that the absorption peak is reduced by half when the optical intensity is approximately 0.8 MW/cm² for well width L=90 ? and β=0.5. Moreover, it is seen that the saturation intensity is quite sensitive to the structure parameters of an asymmetric rectangular quantum well. Thus, the results presented here can be useful for electro-optical modulators and photodetectors in the infrared region.     

Modeling of intersubband transitions in quantum well infrared photodetectors with complex potential profiles

The subband energy dispersions and optical intersubband transitions in n-type InGaAs/Al _x Ga_1-x As quantum well infrared photodetector (QWIP) with linear-graded barriers are calculated using an 8-band k·p model combined with the envelope-function Fourier expansion. The relaxation of quantum confinement in the growth direction has been taken into reasonable consideration. This work is helpful for the analysis and the design of QWIPs with complex well and barrier structures.     

intersubband pumping of an : InP symmetric double quantum well terahertz laser

The feasibility of intersubband optical excitation of a terahertz (1–10 THz) or far-infrared (30–300 ) emitter/laser by a laser diode is investigated by means of envelope function/effective mass approximation and subband carrier lifetime calculations. The material system is employed in order to supply the necessary conduction band offset and the basic design is that of a 6-level symmetric double quantum well. This can simultaneously satisfy the criteria of an 800 meV intersubband absorption and a far-infrared emission. It is shown that these device designs can satisfy a necessary criterion for population inversion at room temperature. A scheme for improving the population ratio based on a 9-level triple quantum well is discussed.     

Near-field mechanism of photoluminescence excitation in quantum well heterostructures

We report a study into the process of energy transfer between quantum wells divided by 30-nm-thick opaque barriers. It was experimentally observed that the intensity of a photoluminescence signal from a quantum well increased by 15% under resonant excitation of exciton transition in the adjacent quantum well. The quantum wells were 30 nm apart. A radiative mechanism of energy transfer in the near-field region of emitting exciton is proposed. Within this theoretical model, the efficiency of the energy transfer decreases by a power law with greater distance between the quantum wells. The theory is found to be in qualitative agreement with the experimental results.     

Interplay of collective excitations in quantum-well intersubband resonances

Intersubband resonances in a semiconductor quantum well (QW) display fascinating features involving various collective excitations such as Fermi-edge singularity (FES) and intersubband plasmon (ISP). Using a density matrix approach, we treated many-body effects such as depolarization, vertex correction, and self-energy consistently for a two-subband system. We found a systematic change in resonance spectra from FES- to ISP-dominated features, as QW width or electron density is varied. Such an interplay between FES and ISP significantly changes both line shape and peak position of the absorption spectrum. We found that a cancellation of FES and ISP undresses the resonant responses and recovers the single-particle features of absorption for semiconductors with a strong nonparabolicity such as InAs, leading to a dramatic broadening of the absorption spectrum.