Resonant polaron coupling of the n = 1 Landau level and the 2p+ donor state in GaAs

The n = 0 → > n = 1 Landau level and 1s ?2p⁺ impurity transitions in GaAs were investigated up to energies above the optical phonon energy ?Ω_LO and d.c. magnetic fields up to 25 T. Pinning of both transitions to an energy slightly above and below ?Ω_LO was observed. At an energy very close to ?Ω_LO two additional impurity transitions are found. These features are attributed to the resonant polaron effect which leads to hybridization and dipole selection rule breakdown. Also the spin doublet splitting of both transitions were resolved showing a strong magnetic field dependence which can not be explained by nonparabolicity of the conduction band alone.     

New physics in high Landau levels

Recent magneto-transport experiments on ultra-high mobility 2D electron systems in GaAs/AlGaAs heterostructures have revealed the existence of whole new classes of correlated many-electron states in highly excited Landau levels. These new states, which appear only at extremely low temperatures, are distinctly different from the familiar fractional quantum Hall liquids of the lowest Landau level. Prominent among the recent findings are the discoveries of giant anisotropies in the resistivity near half-filling of the third and higher Landau levels and the observation of re-entrant integer quantum Hall states in the flanks of these same levels. This contribution will survey the present status of this emerging field.     

Resonant channel coupling in electron scattering by pyrazine

Detailed investigation of the three low-energy resonances seen in electron scattering by the diazabenzene molecule pyrazine reveals that the first two are nearly pure single-channel shape resonances, but the third is, as long suspected, heavily mixed with core-excited resonances built on low-lying triplet states. Such resonant channel coupling is likely to be widespread in pi-ring molecules, including the nucleobases of DNA and RNA, where it may form a pathway for radiation damage.     

Oscillating sign of drag in high Landau levels

Motivated by experiments, we study the sign of the Coulomb drag voltage in a double layer system in a strong magnetic field. We show that the commonly used Fermi golden rule approach implicitly assumes a linear dependence of intralayer conductivity on density, and is thus inadequate in strong magnetic fields. Going beyond this approach, we show that the drag voltage commonly changes sign with density difference between the layers. We find that, in the quantum Hall regime, the Hall and longitudinal drag resistivities may be comparable. Our results are also relevant for pumping and acoustoelectric experiments.     

Landau levels and electron radiation in planar channeling in monocrystals

The influence of a magnetic field on the motion and radiation of an electron is considered for planar channeling in a monocrystal. It is shown that discrete levels analogous to Landau levels appear in the super-barrier domain of transverse energies instead of a continuous spectrum. The spectral composition and intensity of anomalous and normal waves are computed. The possibilities are discussed of the observation of electron radiation with Landau levels.Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 8, pp. 88–93, August, 1989.     

The effect of exchange interaction on quasiparticle Landau levels in narrow-gap quantum well heterostructures

Using the 'screened' Hartree-Fock approximation based on the eight-band k·p Hamiltonian, we have extended our previous work (Krishtopenko et al 2011 J. Phys.: Condens. Matter 23 385601) on exchange enhancement of the g-factor in narrow-gap quantum well heterostructures by calculating the exchange renormalization of quasiparticle energies, the density of states at the Fermi level and the quasiparticle g-factor for different Landau levels overlapping. We demonstrate that exchange interaction yields more pronounced Zeeman splitting of the density of states at the Fermi level and leads to the appearance of peak-shaped features in the dependence of the Landau level energies on the magnetic field at integer filling factors. We also find that the quasiparticle g-factor does not reach the maximum value at odd filling factors in the presence of large overlapping of spin-split Landau levels. We advance an argument that the behavior of the quasiparticle g-factor in weak magnetic fields is defined by a random potential of impurities in narrow-gap heterostructures.     

Magnetophonon resonances of the two-dimensional electron gas in GaAs/AlGaAs heterostructures

We have studied magnetophonon resonances of the two-dimensional (2D) electron gas at the GaAs/AlGaAs interface in a single interface heterostructure and a superlattice. In magnetic fields up to 30T, one set of oscillations is observed, corresponding to the coupling of 2D electrons with LO phonons of GaAs. The effective mass obtained directly from the magnetic field position of the fundamental resonance, where the Landau splitting equals the bulk phonon energy, and of the next two harmonics is $\text{m}{}^1\text{= (0.071 ± 0.0015)m}{}_0$. A comparison with cyclotron resonance measurements on the same system and with bulk GaAs data gives an upper limit of about 2% for the mass corrections due to polaron effects and due to the confinement of the electron gas.     

Resonant electron tunneling in (111) GaAs/AlAs structures

Pseudopotential and scattering matrix methods are used to study the spectral details of the transmission of electrons as a function of the angle of incidence on a heterojunction in various structures based on (111) GaAs/AlAs. A simplified two-valley (Γ-L) model for describing the electronic states in such structures has been proposed and its parameters have been determined. The existence of quasilocalized “interfacial” states has been established. A formula has been found which well approximates the behavior of the scattering matrix elements near these resonances, and their decay times are estimated. Academician V. D. Kuznetsov Siberian Physicotechnical Institute at Tomsk State University. Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika No. 9, pp. 89–99, September, 1998.     

Resonant tunneling properties of heterostructures

A general theory of resonance tunneling in planar structures, independent of the detailed form of the “well”, is developed. The transmission probability versus energy is Lorentzian, near each quasi-local level, with a width that is simply related to the lifetime for escape from the local state, the wave-packet transit time, and the dynamical response time. The charge-accumulation effect is estimated.     

Metastable resistance-anisotropy orientation of two-dimensional electrons in high Landau levels

In half-filled high Landau levels, two-dimensional electron systems possess collective phases which exhibit a strongly anisotropic resistivity tensor. A weak, but as yet unknown, rotational symmetry-breaking potential native to the host semiconductor structure is necessary to orient these phases in macroscopic samples. Making use of the known external symmetry-breaking effect of an in-plane magnetic field, we find that the native potential can have two orthogonal local minima. It is possible to initialize the system in the higher minimum and then observe its relaxation toward equilibrium.     

Optically detected electron spin polarization and Hanle effect in AlGaAs/GaAs heterostructures

The spin polarization of optically created conduction electrons in p-type AlGaAs/GaAs heterostructures was observed via the degree of circular polarization of the photoluminescence. Application of a magnetic field perpendicular to the propagation of the light allows one to determine the spin relaxation time T₁ and the electron lifetime τ in the conduction band. By tilting the magnetic field with respect to an estimate of the effective nuclear field acting on the electrons can be obtained.     

Resonant states in heterostructures of graphene nanoribbons

We study the transport properties of heterostructures of armchair graphene nanoribbons (AGNR) forming a double symmetrical barrier configuration. The systems are described by a single-band tight-binding Hamiltonian and Green's functions formalism, based on real-space renormalization techniques. We present results for the quantum conductance and the current for distinct configurations, focusing our analysis on the dependence of the transport with geometrical effects such as separation, width and transverse dimension of the barriers. Our results show the apparition of a series of resonant peaks in the conductance, showing a clear evidence of the presence of resonant states in the conductor. Changes in the barrier dimensions allow the modulation of the resonances in the conductance, making possible to obtain a complete suppression of electron transmission for determined values of the Fermi energy. The current–voltage curves show the presence of a negative differential resistance effect with a threshold voltage that can be controlled by varying the separation between the barriers and by modulating its confinement potential.