电子俘获材料光谱特性的研究

采用沉积法将电子俘获材料不仅粉末制成薄膜样品,用ＷＧＹ－１０荧光光度计、自建光谱测试系统对薄膜样品的各种光谱特性进行测试和简单分析,不仅提供了电子俘获材料的激发、激励及辐射光谱特性,为材料的应用提供了技术上依据,而且是优化材料制备工艺所必需的测试环节。此实验可作为近代物理实验课的小型科研训练题目。     

The study on optically stimulated luminescence dosimeter based on the SrS：Eu,Sm and CaS：Eu,Sm

With the increasing use of nuclear energy, there is a need for a wider range of efficient dosimeters for radiation detection and assessment. There has been a tremendous growth in the development of radiation detectors and devices in the past few decades. In recent years, the development of new materials for radiation dosimetry has progressed significantly. Alkaline earth sulfides （AES） have been known for a long time as excellent and versatile phosphor materials. In the present investigation, a number of phosphor samples such as mono-, binary and ternary sulfides of alkaline earths （II^a-VI^b） have been prepared and their TL properties have been studied with respect to exposure （x-ray） response and fading. In this paper, some results on SrS：Eu, Sm and CaS：Eu, Sm phosphors are presented. A type of novel OSL dosimeter is described. The dosimeter takes advantage of the characteristics of charge trapping materials SrS：Eu, Sm and CaS：Eu, Sm that exhibit optically stimulated luminescence （OSL）. The measuring range of the dosimeter is from 0.01 to 1000 Gy. The OSL dosimeters provide capability for remote monitoring radiation locations which are difficult to access and hazardous. This equipment is relatively simple, small in size and has low power consumption. The device is suitable for space radiation dose exploration. In addition, it also can be used in IC and other radiation occasions and has good prospects.     

Oxygen exposure of Sm,Gd and Tb studied by Auger electron spectroscopy

The present paper treats the characteristics of the Auger transitions out of the valence band of the lanthanides Sm, Gd and Tb engaging in a chemical compound. These facts have been observed by AES on the basis of a slow oxidation process for these elements. The appearing Auger transitions have been identified as far as possible and compared with studies of density of states. The changes in the Auger spectra and the oxidation rate have been discussed.     

SrS:Eu,Sm荧光粉的制备及性能表征

制备了用于宽频谱红外上转换的SrS:Eu,Sm荧光粉.XRD分析表明,在1 100℃,灼烧1 h获得的SrS:Eu,Sm样品较理想,为SrS的面心立方结构;激发光谱表明,样品可被紫外和可见光有效激发;样品的荧光发射光谱由4个发射峰组成,峰值分别位于567,589,602和648 nm.红外上转换发光光谱是峰值位于595nm附近的宽带谱,样品的红外响应范围主要位于800～1 400 nm.     

Laser spectroscopy of CaF2:Eu:Sm thin films grown by pulsed laser deposition

Thin films of CaF₂ co-doped with low concentrations of Eu and Sm ions were grown by pulsed laser deposition (PLD) using a KrF (λ=248 nm) as the ablation source. To the best of our knowledge, the work presented here is the first report of rare-earth-doped CaF₂ films grown by PLD with this source. Combined laser excitation-emission spectroscopy was used to map out electronic transitions of Eu³⁺ with ⁷F₀→⁵D₁ excitation and the ⁵D₀→⁷F₁ emission. At the low concentrations used here the crystal field center of cubic symmetry is dominant in the films that are same for laser targets. However, charge compensated centers are present in the bulk crystal precursor. The removal of the charge compensated centers in the films and the target is likely caused by the target preparation where high pressure and temperature were applied.     

SrS∶Eu,Sm光存储机理的研究

采用高温固相反应法在还原气氛下制备了SrS:Eu,Sm样品,利用荧光光谱仪测量了这种光存储材料的激发光谱和发射光谱.将样品用紫外灯(265 nm)照射激发饱和后,再用980 nm的红外激光器激励,利用荧光光谱仪测试得到了峰值位于599 nm的光激励发光光谱.此外还利用热释光谱仪测试了样品的热释光谱.探讨了SrS:Eu,Sm的光存储机理,认为引入的稀土离子在SrS的带隙中形成分裂能级.当用紫外光照射材料时,Eu的电子从基态被激发到激发态或基质材料的导带,其中一部分电子被辅助激活剂Sm的陷阱俘获,实现信息写入.当材料被与陷阱深度相当的红外光激励时,电子陷阱Sm2 俘获的电子才可能跃出俘获能级,与空穴在Eu的激发态和基态能级上复合,多余的能量以可见光的形式释放出来,实现信息读出.     

A novel electron spectroscopy for surface studies

The method makes use of the decrease in the elastically backscattered electron current at characteristic excitation thresholds of surface atoms, when the primary energy is scanned. By means of electronic differentiation the structures in the energy dependence of the coefficient of elastic reflection are made visible. They can give information on the elemental composition and electronic structure of the surface layer.     

SrS:Eu与SrS:Eu,Sm中电子陷阱与光存储研究

对SrS:Eu和SrS:Eu,Sm激发初始阶段的荧光上升过程和余辉进行了研究,并进一步考证其中 电子陷阱的属性.通过两种样品和两个阶段的比较,对陷阱数量和深度的变化、量子效率以 及电子俘获和释放、复合过程进行了分析,发现Sm离子并不影响陷阱的数量.利用吸收光谱 方法研究了SrS:Eu,Sm中电子由陷阱能级向导带的跃迁.通过陷阱饱和-倒空吸收谱差,即激 励吸收谱及其强度随Eu,Sm浓度的变化,探讨了掺杂浓度对陷阱浓度和光存储饱和量的影响. 结果表明Sm离子的作用是使陷阱能级加深从而能稳定地储存电子.通过激励吸收谱峰值强度 可确切地比较光存储材料在这方面的性能,并与光激励谱的测量方法作了对照. 关键词： 电子陷阱 光存储 电子俘获 光激励发光     

High resolutionL- andM-subshell internal conversion studies of low energy transitions in149Sm and151Eu

The internal conversion subshell intensities of the (21.529±0.014) keV transition in¹⁵¹Eu and the (22.494±0.011) keV transition in¹⁴⁹Sm have been determined in a high resolution investigation using a double-focussing iron-core spectrometer. The subshell ratios yielded unambiguousM1+E2 multipole mixtures for both transitions. δ²(E2/M1) for the 21.53 keV transition was determined to be (8.8±0.7)·10^?4 and for the 22.49 keV transition to be (5.5±1.2)·10^?3.     

Study on relationship of luminescence in CaS:Eu,Sm and dopants concentration

In order to study different characteristic luminescence of Eu²⁺ and Sm³⁺, delayed photoluminescence (DPL) and infrared stimulated luminescence (ISL) spectra of CaS doped with europium and samarium have been investigated. The influence of Eu and Sm concentration on luminescence of Eu²⁺ in photoluminescence (PL) and ISL was respectively studied. It was found that, at low doping levels, PL emission intensity of Eu²⁺ increased linearly with increment of Eu, while decreased linearly with increment of Sm. However, further increment of Eu and Sm in CaS:Eu,Sm could not increase either the luminescent centres of Eu²⁺ or electron trapping sites of Sm³⁺. Different local environment of Eu²⁺ and Sm³⁺ in the lattice position is thought to be the cause of all observed luminescence phenomena. Finally, the maximum emission in ISL was obtained at 1000 ppm europium and 750 ppm samarium.     

电子俘获材料CaS∶Eu,Sm光谱特性研究

研究了电子俘获材料CaS∶Eu,Sm多晶粉末的紫外-可见-红外吸收光谱及红外激励光谱.研究结果表明,CaS∶Eu,Sm中主激活剂Eu和辅助激活剂Sm分别以Eu2+离子和Sm3+离子的形式存在；ETM的吸收差谱及红外激励光谱所反映的光谱特性是不同的.紫外-可见光区的吸收差谱给出了ETM光谱存储灵敏度的信息,而红外光谱区的吸收差谱给出了ETM所俘获电子数量的信息及电子陷阱能级的特征（深度和宽度）信息.红外激励光谱则反映了ETM将不同波长的红外激励光的能量转换为特定波长处的红外辐射光能量的光谱转换灵敏度.二者结合起来可以更完整地描述ETM的光谱特性.     

Auger electron spectroscopy and leed studies of adsorption isotherms: Xenon on (0001) graphite

The passivation mechanism and related natures of silicon surfaces with a very thin natural oxide film baked at low temperature and low pressure (≤ 600°C, 1–5 × 10^?6Torr) was studied principally by the measurement of ESR absorption. Two sorts of resonance lines, which are called the broad and the narrow line hereafter, were observed in the dark by vacuum baking after introducing air. Paramagnetic centers responsible for the broad line have a one-to-one correspondence to such surface states at the silicon-silicon oxide interface that have an electrically amphoteric nature. The narrow line with an intense g-anisotropy originated from trivalent silicons. These ESR lines interact very sensitively with atmospheric gases such as water and oxygen. In addition, light illumination induced two ESR lines different from those observed in the dark. The electron trapped at the surface state forms an intrinsic layer at the surface of n-type silicon. It has been confirmed by present ESR experiments and surface conductance measurements that the passivation effects of this surface to various atmospheric ambients such as water vapor results from the existence of an intrinsic layer at the surface of n-type silicon.     

Auger electron spectroscopy and electron energy loss spectroscopy studies on carbonization of Si(100) and (111) surfaces with ethylene

The reactions of Si(100) and Si(111) surfaces at 700 °C (973 K) with ethylene (C₂H₄) at a pressure of 1.3×10⁻⁴ Pa for various periods of time were studied by using Auger electron spectroscopy (AES) and electron energy loss spectroscopy (ELS). For a C₂H₄ exposure level, the amount of C on the (111) surface was larger than that on the (100) surface. The formation of β-SiC grain was deduced by comparing the C_KLL spectra from the sample subjected to various C₂H₄ exposure levels, and from β-SiC crystal.     

Up-conversion and optical storage properties of SrS: Eu, Sm in PMMA

An erasable and rewritable optical-storage material SrS: Eu,Sm synthesized. Optical emission and excitation spectra of this material were measured. Using the SrS: Eu, Sm-PMMA film, the image-recording experiment was performed.     

甲胺分子的同步辐射光电离解离质谱

在超声射流冷却条件下,利用同步辐射光源,结合飞行时间质谱对CH3NH2分子在60—140nm波长范围内的光电离解离进行了研究.主要动力学过程为母体离子的解离过程.CH2NH2+和CH3+由CH3NH2+在高能量时解离生成,而CH2NH2+的1,1脱H2过程则产生其他离子.CH3NH2分子的电离势(IP)为916±001eV,和分子轨道能量计算的理论值符合得非常好,并获得CH3NH2+和CH2NH2+的生成热分别为860±05kJmol和7541kJmol. 关键词： 同步辐射光电离 飞行时间质谱 电离势 生成热     

Experiments on the resolving power of holographic Fourier-transform spectroscopy

First successful resolution of Na doublet by holographic method is reported. Another experiment on Hg spectrum reconstruction using Hg source is described. The result shows clearly the difference in nature between resolving power of grating and that in holographic Fourier-transform spectroscopy.     

Site-selective spectroscopy in Eu: lanthanum magnesium aluminate

Pulsed resonance emission spectra for La_1-xEu_xMgAl₁₁O₁₉ are reported under excitation into the non-degenerate ⁵D₀ « ⁷F₀ transition of Eu³⁺ at 77 K. Emission spectra recorded under continuous-wave excitation into the same transition at liquid helium temperature were also examined. These results show clear evidence for the existence of only two distinct substitutional site distributions for Eu³⁺, with their ⁵D₀ « ⁷F₀ transitions between 577 and 579 nm. The suggestion of a third site distribution ca. 576 nm is also reported. Discrepancies concerning the number of Eu³⁺ substitutional sites and the positions of their corresponding ⁵D₀ å ⁷F₀ peaks reported in other studies are addressed in the light of our results.