Magnetic and structural properties of FeX/Tb15 Å multilayers

Magnetic domains in Fe/Tb sputter-deposited multilayer films are studied magneto-optically using a Kerr microscope. These observations together with other experimental measurements (vibrating sample- and torque magnetometry) showed the important role of the iron-layer thickness d_Fe on the magnetic properties of the films. At certain combinations of the layer thicknesses both perpendicular and in-plane anisotropies are present in the film. The structural investigations indicate that a gradual increase of the iron-layer thickness d_Fe leads to a phase transition of iron from amorphous to crystalline at certain thicknesses of the iron layer, which is also reflected in the magnetic behavior of the films. The differences between the magnetic properties of the investigated multilayered Fe/Tb films and those of amorphous FeTb films are discussed as well.     

Effect of LaNiO3 buffer layers on the structure and electrical properties of sol–gel-derived Pb(Mg1/3Nb2/3)O3PbTiO3 thin films

Pb(Mg_1/3Nb_2/3)O₃PbTiO₃ (PMNT) thin films on Pt/TiO₂/SiO₂/Si substrates with and without a LaNiO₃ (LNO) buffer layer have been prepared using a sol–gel method. Structures and electrical properties of these two films have been investigated and compared. Highly (111)-oriented PMNT thin films with a certain amount of pyrochlore phase are obtained on bare Pt electrodes. On the contrary, (100)-oriented PMNT thin films with pure perovskite phase are formed on Pt electrodes with a LNO buffer layer. Cracks are found in the former but not in the latter. The dielectric constant of PMNT thin films on LNO-buffer Pt electrodes is larger than that on bare Pt electrodes. A great lowering of the leakage current is observed in the films with a LNO buffer layer. The improvement in the electrical properties is attributed to both the elimination of cracks and the suppression of pyrochlore phase in the films. PACS 77.84.Dy; 77.80.-e; 77.22.Gm     

Unusual resistive switching induced by voltage in La0.7Sr0.3MnO3 thin films

The hysteretic and reversible resistive-switching effect was observed in La_0.7Sr_0.3MnO₃ films at room temperature. The resistive switching was found to be most obvious in films fabricated at 30 Pa oxygen pressure, and more distinct in films fabricated on SrTiO₃ substrates than those fabricated on LaAlO₃ substrates. Moreover, La_0.7Sr_0.3MnO₃ films fabricated at a certain oxygen pressure with indium electrodes showed double ‘8’ type current-voltage loops. Some of the results are explained by considering the influence of the interface effect, electrodes and oxygen vacancies, but the mechanism of the double ‘8’ type current-voltage loops remains an open question.     

非晶Nd-Fe薄膜电阻的温度效应与非晶稳定性

用闪光蒸镀法在77K制备了Nd_xFe_1-x(x=0.06-0.80)非晶薄膜,原位测定了其电阻随温度的变化。结果表明:在0.192和ρ(T)∝T。晶化不是在一个固定的温度,而是在一个温度区间发生。     

Effects of nitrogen doping on optical properties of TiO2 thin films

The potential for extending the optical absorption range of TiO₂ by doping with nonmetallic elements was examined in nitrogen-containing TiO₂ thin films. Thin films of TiO_2-xN_x were synthesized on glass and silicon substrates by ion-beam-assisted deposition to obtain a wide range of nitrogen concentrations. The compositions of the films were determined by Rutherford backscattering spectrometry and X-ray photoelectron spectroscopy. The structures of the films were analyzed by X-ray diffraction, transmission electron microscopy, and atomic force microscopy. The optical properties of the films were measured by UV-Vis spectroscopy and ellipsometry. A characteristic decreasing trend in band-gap values of the films was observed within a certain range of increasing dopant concentrations. As the nitrogen concentration increased, the structure of the films evolved from a well-defined anatase to deformed anatase. The reduced band gaps are associated with the N 2p orbital in the TiO_2-xN_x films. PACS 78.66.-w; 78.20.Ci     

Effect of Sc substitution on the structure,electrical, and magnetic properties of multiferroic BiFeO3 thin films grown by a sol–gel process

Multiferroic BiFeO₃ (BFO), Bi_1−xSc_xFeO₃ (BSF), and BiFe_1−xSc_xO₃ (BFS) (x=0.3 mol%) thin films are prepared on Pt/Ti/SiO₂/Si substrates using a sol–gel technique. The effect of Sc substitution along with the annealing ambient (N₂ and O₂) on the structure, electrical, and magnetic properties of the films are reported. X-ray diffraction (XRD) analysis reveals that the films can be prepared with the single-phase perovskite structure by annealing at 700 °C for 10 min either in O₂ or N₂ ambient. The unit cell volume increases on the substitution of Sc, which are 61.39, 62.50, and 62.57 (Å)³ for BFO, BSF, and BFS, respectively. X-ray photoelectron spectroscopy (XPS) study reveals that the chemical environments of Bi and Fe are different in BFO, BSF, BFS films. Similarly, XPS spectra for Sc2p lines in BSF and BFS also have different peak positions; this indicates Sc doping has certain chemical impact on BSF and BFS films. Systematic studies of Sc substitution along with the effect of annealing ambient on the dielectric constant (ε) and dielectric loss (tan δ), leakage current, remnant polarization (P_r), coercive field (E_c), and magnetic properties of the films are carried out. The room temperature values of ε and tan δ at 1 kHz for BFO and BFS films annealed in N₂ ambient are (∼208; 0.035) and (∼235; 0.023), respectively. The comparative value of leakage current for the BFO and BFS films at an applied field strength of 50 kV/cm are 2.997×10⁻⁴ and 1.87×10⁻⁵ A/cm², respectively. Room temperature value of coercive magnetization for BFS films has one order small compared to that of the BFO films; this indicates BFS films are magnetically soft and more suitable for potential device applications. Finally, among the studied compositions, the BFS films annealed in N₂ ambient show the best property.     

XPS investigation of diffusion of two-layer ZrO2/SiO2 and SiO2/ZrO2 sol–gel films

Two-layer ZrO₂/SiO₂ and SiO₂/ZrO₂ films were deposited on K9 glass substrates by sol–gel dip coating method. X-ray photoelectron spectroscopy (XPS) technique was used to investigate the diffusion of ZrO₂/SiO₂ and SiO₂/ZrO₂ films. To explain the difference of diffusion between ZrO₂/SiO₂ and SiO₂/ZrO₂ films, porous ratio and surface morphology of monolayer SiO₂ and ZrO₂ films were analyzed by using ellipsometry and atomic force microscopy (AFM). We found that for the ZrO₂/SiO₂ films there was a diffusion layer with a certain thickness and the atomic concentrations of Si and Zr changed rapidly; for the SiO₂/ZrO₂ films, the atomic concentrations of Si and Zr changed relatively slowly, and the ZrO₂ layer had diffused through the entire SiO₂ layer. The difference of diffusion between ZrO₂/SiO₂ and SiO₂/ZrO₂ films was influenced by the microstructure of SiO₂ and ZrO₂.     

Electrophoretic deposition of BaTiO3/CoFe2O4 multiferroic composite films

Electrophoretic deposition was utilized for preparation of BaTiO₃/CoFe₂O₄ multiferroic composite thick films on indium-tin oxide substrates. The suspensions for electrophoretic experiments were prepared by dispersing BaTiO₃ and CoFe₂O₄ nanoparticles with different molar ratios into solvents composed of ethanol and acetylacetone. Polyvinyl butyral was added to the suspensions in order to enhance the adhesion and strength of deposit and prevent cracking. The zeta potential values of BaTiO₃/CoFe₂O₄ suspensions were measured to be 26.4-36.9 mV. The experiment results showed that deposited films were obtained only when the applied electric field was larger than a certain critical value. XRD and SEM analysis depicted the presence of constituent phases in composite films. The percolation threshold of composite films was improved through dispersing ferromagnetic phase into ferroelectric phase. Therefore, the ferroelectric properties of composite thick films were maintained when the ferromagnetic properties were enhanced significantly with increasing CFO content.     

Influence of the ion energy on the structure of Bi and Fe2O3 thin films

Compounds containing bismuth, iron and oxygen (BFO) can result in materials with important magnetic and electrical properties for high-technology applications. We plan to prepare such compounds using the simultaneous ablation of bismuth and iron oxide targets. For that reason in the first part of this work we study the plasmas and the materials produced by ablation of bismuth or Fe₂O₃ targets, and then the two plasmas are combined in order to deposit the BFO compounds. The individual plasmas were characterized using a Langmuir probe, in order to measure the mean kinetic ion energy (E _p) and plasma density (N _p). Bismuth and magnetite-Fe₃O₄ thin films were obtained in high vacuum (2.7×10^?4 Pa). Meanwhile for the deposition of α-Fe₂O₃ (hematite) or amorphous bismuth oxide thin films a reactive atmosphere (Ar/O₂=80/20) was used. All depositions were made at room temperature. The bismuth thin films crystallized in the rhombohedral metallic system with preferential orientations that depended on the Bi-ion energy used. Bismuth oxide phases were only obtained after annealing of the Bi thin films at different temperatures. Iron oxide thin films reproducing the target stoichiometry were obtained at a certain value of iron-ion energy. Preliminary structural results of the BFO thin films obtained by the combination of the individual plasmas are presented.     

The investigation of room temperature ferromagnetism in (1 0 0) oriented BaNb2O6 PLD films on LaAlO3 (1 0 0) substrate

(1 0 0) oriented BaNb₂O₆ films have been successfully grown on LaAlO₃ (1 0 0) substrate at 750 °C or 450 °C in vacuum by pulsed laser deposition. The deposited BaNb₂O₆ PLD films exhibit room-temperature ferromagnetism. Ab initio calculations demonstrate that stoichiometric BaNb₂O₆ and that with barium vacancy are nonmagnetic, while oxygen and niobium vacancy can induce magnetism due to the spin-polarization of Nb s electrons and O p electrons respectively. Moreover, ferromagnetic coupling is energetically more favorable when two Nb/O vacancies are located third-nearest-neighbored. The observed room temperature ferromagnetism in BaNb₂O₆ films should be mainly induced by oxygen vacancies introduced during vacuum deposition, with certain contribution by Nb vacancies.     

Effect of substrate interactions on the melting behavior of thin polyethylene films

Polymer films have been known to change their physical properties when film thickness is decreased below a certain value. The cause of this phenomenon is still unclear but it has been suggested that interactions and/or chain free-volume changes at the surface of the films are largely responsible for this behavior. In this paper, the effect of substrate interactions on the behavior of polymer thin films is evaluated quantitatively. The infrared spectra of nanothin polyethylene (PE) films were recorded as a function of temperature and amount of substrate covering the surface of the film. The evolution of specific bands in the CH₂ rocking region of the spectra was used to determine the melting temperature (T _m ) of the material. Results show different variations in T _m depending on the nature of the substrate, indicating that interactions dominate free-volume considerations in PE thin films. By varying the amount of surface coverage, a quantitative estimate of the heat of interaction was determined, which confirmed the importance of surface interactions.     

Enhancement of the electron-stimulated desorption from amorphous aluminum oxide films on silicon during an increase in the substrate temperature

The effect of high-temperature electron-stimulated desorption (ESD) from 20-nm-thick Al₂O₃ films deposited onto silicon wafers is studied. The ESD effect is found to be significantly enhanced upon heating. The films are found to decompose during ion beam irradiation of a heated substrate resulting in pure Al appearance. This process is accompanied by the formation of islands and almost pure silicon surface regions at a certain critical irradiation dose. Outside the irradiation zone, a 20-nm-thick Al₂O₃ film remains continuous even upon heating to 700°C and holding for 90 min. The effect of the primary electron beam energy on ESD from a 20-nm-thick Al₂O₃ film on silicon is investigated, and the parameters at which ESD takes place or absent are determined.     

Gas barrier properties of titanium oxynitride films deposited on polyethylene terephthalate substrates by reactive magnetron sputtering

Titanium oxynitride (TiN_xO_y) films were deposited on polyethylene terephthalate (PET) substrates by means of a reactive radio frequency (RF) magnetron sputtering system in which the power density and substrate bias were the varied parameters. Experimental results show that the deposited TiN_xO_y films exhibited an amorphous or a columnar structure with fine crystalline dependent on power density. The deposition rate increases significantly in conjunction as the power density increases from 2 W/cm² to 7 W/cm². The maximum deposition rate occurs, as the substrate bias is −40 V at a certain power densities chosen in this study. The film's roughness slightly decreases with increasing substrate bias. The TiN_xO_y films deposited at power densities above 4 W/cm² show a steady Ti:N:O ratio of about 1:1:0.8. The water vapor and oxygen transmission rates of the TiN_xO_y films reach values as low as 0.98 g/m²-day-atm and 0.60 cm³/m²-day-atm which are about 6 and 47 times lower than those of the uncoated PET substrate, respectively. These transmission rates are comparable to those of DLC, carbon-based and Al₂O₃ barrier films. Therefore, TiN_xO_y films are potential candidates to be used as a gas permeation barrier for PET substrate.     

Morphological, microstructural and optical properties supremacy of binary composite films—A study based on Gd2O3/SiO2 system

Composites are pragmatic choices for tailoring the material to have a desired property. Besides, such thin films have scopes to display superior optical, microstructural and morphological properties which are otherwise not possible to obtain from the pure component films. Vapor-phase-mixed binary composite Gd₂O₃/SiO₂ thin film is one such interesting system where band gap as well as refractive index superiority is observed simultaneously under certain compositional mixings. Such and similar observations in composites cannot be explained by Moss empirical rule. Our systematic study on the microstructure of this composite system based on ellipsometry and scanning probe microscopy has satisfactorily provided the information that can explain such optical properties supremacy. Morphological measurements and its derived parameters like autocorrelation and height-height correlation functions have provided several clues that represent the superior grain structures of the composites. Besides, refractive index modeling through effective single oscillator model has strongly supported such analysis results favoring the superior microstructure in composite films.     

EPR and photoluminescence spectra of smooth CD<Subscript><Emphasis Type="Italic">x</Emphasis></Subscript> films from T-10 tokamak: The effect of iron impurity

The electron and spin structure of thick smooth hydrocarbon CD _x films (“flakes”) with a high relative deuterium concentration of x ~ 0.5, redeposited from deuterium plasma discharge onto the walls of the vacuum chamber of the T-10 tokamak and containing ~1 at % of 3d-metal impurities due to erosion of the chamber walls, are studied using electron paramagnetic resonance (EPR) and photoluminescence (PL). The resulting spectra are compared for the first time to the EPR and photoluminescence spectra of polymer (soft) a-C:H(D) films (H(D)/C ~ 0.5), which are considered model analogues of smooth CD _x films. A certain similarity of the CD _x films with a-C:H films was found in the electronic structure of the valence band. At the same time, the differences in the EPR and photoluminescence spectra were observed due to the presence of 3d-metal impurities in the CD _x samples, contributing to the conversion of sp ³ → sp ² in the formation of films in the tokamak and upon heating and thermal desorption. An impurity of, presumably, 3d metals was detected for the first time by EPR in the a-C:H films in an amount of approximately 0.2 ppm, related to the evaporation of graphite.     

Hf-sputtered indium oxide films doped with tin

Indium oxide films doped with tin (ITO-films) have been hf-sputtered from an 80 at-%In₂O₃/20 at-%SnO₂ target onto glass substrates. The sputter atmosphere contained mainly argon (10⁻²Torr) with addition of oxygen (0≦p _{O 2}≦2·10⁻²Torr). The sputtered films aren-conductors. The conductivity and density of charge carriers depend on the oxygen content of the sputter gas. They could be varied by two orders of magnitude. In air or in oxygen atmosphere the films oxidize at the surface and for a certain depth beneath the surface, thus decreasing the conductivity. The Hall mobility of the sputtered films is smaller (≈10 cm²V⁻¹ s⁻¹) than one observes at ITO films produced by CVD sparaying or other methods. The conductivity of as sputtered films approached maximum values of about 1000Ώ⁻¹cm⁻¹.     

氧化法结合快速热处理制备VOx薄膜及其性质研究

采用磁控溅射法在单晶Si〈100〉基底上沉积金属钒(V)薄膜,在高纯氧环境下快速热处理制备具有相变特性的氧化钒(VOx)薄膜.利用X射线衍射仪、X射线光电子能谱和扫描电子显微镜对薄膜结晶结构、薄膜中V的价态与组分及表面微观形貌进行分析,应用四探针测试方法和太赫兹时域频谱技术对样品的电学和光学特性进行测试.结果表明:在一定范围的快速热处理保温温度和保温时间下,都可以制备出具有热致相变特性的氧化钒薄膜,相变前后薄膜的方块电阻变化超过两个数量级,薄膜成分主要由V2O5和VO2混合组成,薄膜中V整体价态不因热处理条件改变而不同.在快速热处理条件范围内,500℃ 25 s左右条件下(中温区)制备出的氧化钒薄膜相变特性最佳,并且对THz波有一定的调制作用.     

Optical excitation and emission processes of Si-QD/SiO2 multilayer films with different SiO2 layer thicknesses

Si-rich oxide/SiO₂ multilayer films with different SiO₂ layer thicknesses have been deposited by the plasma enhanced chemical vapor deposition technique, and crystallized Si quantum dot (Si-QD)/SiO₂ multilayer films are obtained after annealing at 1100 ^°C. The photoluminescence (PL) intensity of the multilayer films increases significantly with increasing SiO₂ layer thickness, and the PL peak shifts from 1.25 eV to 1.34 eV. The PL excitation spectra indicate that the maximal PL excitation intensity is located at 4.1 eV, and an excitation–transfer mechanism exists in the excitation processes. The PL decay time for a certain wavelength is a constant when the SiO₂ thickness is larger than 2 nm, and a slow PL decay process is obtained when the SiO₂ layer is 1 nm. In addition, the PL peak shifts toward high energy with decreasing temperature only when the SiO₂ layer is thick enough. Detailed analyses show that the mechanism of PL changes from the quantum confinement effect to interface defects with decreasing SiO₂ layer thickness.     

超导In-Sn合金膜临界场的非线性非定域效应

本文对In+2％Sn,In+3％Sn的不同厚度合金膜的临界场H_c进行了研究,从实验上第一次提供了电子平均自由程l≠∞时的H_c～d的数据。这些实验结果表明,关于超导膜临界场问题只能用非线性非定域理论描述,在薄膜极限下,不论纯膜或合金膜,H_c∝d^-3/2;定域的London,Г-Л理论和线性非定域的Ittner理论皆不适用。一部分文献中给出H_c∝d^-1的结论,是由于那些作者分析实验结果的方法不恰当所致。     

Role of cadmium-related defects on the structural and electrical properties of nanocrystalline CdTe:TiO2 sputtered films

CdTe:TiO₂ nanocrystalline films with varying volume fraction of CdTe were prepared by rf magnetron sputtering from a composite TiO₂:CdTe target. The structural and electrical properties of the films were analyzed as a function of their Cd concentration. It was found that thermally treated films were Cd-rich and were stress free and had lower resistivity values. Field dependent current measurements showed that nanocrystalline films upon thermal treatment in the range 250–300 °C exhibit an unusual current peak under certain conditions of field and temperature. The current peak was associated with the presence of Cd-related defects in the CdTe lattice. The threshold temperature for the formation of Cd-related defects shifted to lower values for Cd-deficient films.