Anomalous quantum Hall effect induced by nearby quantum dots

Transport measurements in high magnetic fields have been performed on two-dimensional electron system (2DES) separated by a thin barrier layer from a layer of InAs self-assembled quantum dots (QDs). Clear feature of quantum Hall effect was observed in spite of presence of QDs nearby 2DES. However, both magnetoresistance, ρ_xx, and Hall resistance, ρ_xy, are suppressed significantly only in the magnetic field range of filling factor in 2DES ν<1 and voltage applied on a front gate . The results indicate that the electron state in QDs induces spin-flip process in 2DES.     

异常霍尔效应和自旋霍尔效应

异常霍尔效应和自旋霍尔效应是在常规霍尔效应的基础上引发出的2种新现象.本文介绍了这2种现象及其原理和潜在的应用.     

Anomalous Hall effect of heavy holes in III-V semiconductor quantum wells

The anomalous Hall effect of heavy holes in semiconductor quantum wells is studied in the intrinsic transport regime, where the Berry curvature governs the Hall current properties. Based on the first--order perturbation of wave function the expression of the Hall conductivity the same as that from the semiclassical equation of motion of the Bloch particles is derived. The dependence of Hall conductivity on the system parameters is shown. The amplitude of Hall conductivity is found to be balanced by a competition between the Zeeman splitting and the spin--orbit splitting.     

Anomalous hydrodynamics of fractional quantum Hall states

We propose a comprehensive framework for quantum hydrodynamics of the fractional quantum Hall (FQH) states. We suggest that the electronic fluid in the FQH regime can be phenomenologically described by the quantized hydrodynamics of vortices in an incompressible rotating liquid. We demonstrate that such hydrodynamics captures all major features of FQH states, including the subtle effect of the Lorentz shear stress. We present a consistent quantization of the hydrodynamics of an incompressible fluid, providing a powerful framework to study the FQH effect and superfluids. We obtain the quantum hydrodynamics of the vortex flow by quantizing the Kirchhoff equations for vortex dynamics.     

Anomalous Hall effect in ferromagnetic semiconductors

We present a theory of the anomalous Hall effect in ferromagnetic (III, Mn)V semiconductors. Our theory relates the anomalous Hall conductance of a homogeneous ferromagnet to the Berry phase acquired by a quasiparticle wave function upon traversing closed paths on the spin-split Fermi surface. The quantitative agreement between our theory and experimental data in both (In, Mn)As and (Ga, Mn)As systems suggests that this disorder independent contribution to the anomalous Hall conductivity dominates in diluted magnetic semiconductors. The success of this model for (III, Mn)V materials is unprecedented in the longstanding effort to understand origins of the anomalous Hall effect in itinerant ferromagnets.     

Anomalous Hall effect in granular alloys

A theoretical study is performed of the anomalous Hall effect in granular alloys with giant magnetoresistance. The calculation is carried out within the Kubo formalism and the Green’s function method. The mechanism of asymmetric scattering of the spin-polarized current carriers is considered with allowance for a size effect associated with scattering not only by one grain, but also with more complicated processes of transport among two and three grains. It is shown that scattering of conduction electrons by the interfaces of the grains and the matrix has a substantial effect on the magnitude of the anomalous Hall effect and determines its sign. In general, correlation between the quantities ρ _H and ρ ² is absent, where ρ _H is the Hall resistivity and ρ is the total resistivity of the granular alloy. However, numerical calculation shows that for certain values of the model parameters ρ _H∼ρ ^3.8 and for these same parameter values the amplitude of the giant magnetoresistance reaches 40%, which is found to be in quantitative agreement with the experimental data for Co₂₀Ag₈₀ alloys [P. Xiong, G. Xiao, J. Q. Wang et al., Phys. Rev. Lett. 69, 3220 (1992)]. It is also shown that increasing the resistivity of the matrix leads to a significant growth in the anomalous Hall effect, and more substantial growth for alloys with small grain size, which is in good agreement with experiment [A. B. Pakhomov, X. Yan, and Y. Xu, J. Appl. Phys. 79, 6140 (1996); [X. N. Jing, N. Wang, and A. B. Pakhomov, Phys. Rev. B 53, 14032 (1996)]. Zh. éksp. Teor. Fiz. 112, 2198–2209 (December 1997)     

Anomalous Hall effect in noncommutative mechanics

The anomalous velocity term in the semiclassical model of a Bloch electron deviates the trajectory from the conventional one. When the Berry curvature (alias noncommutative parameter) is a monopole in momentum space, as found recently in some ferromagnetic semiconductors while observing the anomalous Hall effect, we get a transverse shift, similar to that in the optical Hall effect.     

On the quantum Hall effect

We consider a particle in a 2 dimensional plane in a periodic potential and a homogeneous magnetic field perpendicular to the plane. Kubo's expression for conductivity of the Hall current is an integer.

This result of Thouless, Kohomoto, Nightingale and den Nijs is interpreted geometrically.     

Anomalous Hall effect in polycrystalline Ni films

We systematically studied the anomalous Hall effect in a series of polycrystalline Ni films with thickness ranging from 4 to 200 nm. It is found that both the longitudinal and anomalous Hall resistivity increased greatly as film thickness decreased. This enhancement should be related to the surface scattering. In the ultrathin films (4–6 nm thick), weak localization corrections to anomalous Hall conductivity were studied. The granular model, taking into account the dominated intergranular tunneling, has been employed to explain this phenomenon, which can explain the weak dependence of anomalous Hall resistivity on longitudinal resistivity as well.     

Time-reversal-symmetry-broken quantum spin Hall effect

The quantum spin Hall (QSH) state of matter is usually considered to be protected by time-reversal (TR) symmetry. We investigate the fate of the QSH effect in the presence of the Rashba spin-orbit coupling and an exchange field, which break both inversion and TR symmetries. It is found that the QSH state characterized by nonzero spin Chern numbers C(±) = ±1 persists when the TR symmetry is broken. A topological phase transition from the TR-symmetry-broken QSH phase to a quantum anomalous Hall phase occurs at a critical exchange field, where the bulk band gap just closes. It is also shown that the transition from the TR-symmetry-broken QSH phase to an ordinary insulator state cannot happen without closing the band gap.     

Anomalous Hall effect in highly Mn-Doped silicon films

The transport and magnetic properties of Mn _x Si_{1 ? x} films with a high (x ≈ 0.35) content of Mn produced by laser deposition at growth temperatures of 300–350°C have been studied in a temperature range of 5–300 K in magnetic fields of up to 2.5 T. The films exhibit a hole-type metallic conductivity and a relatively weak change of magnetization in a temperature range of 50–200 K. An anomalous Hall effect with an essentially hysteretic behavior from 50 K up to ≈230 K has been discovered. The properties of the films are explained by the two-phase model, in which ferromagnetic clusters containing interstitial Mn ions with a localized magnetic moment are embedded in the matrix of a weak band MnSi_{2 ? x} (x ≈ 0.3) type ferromagnet with delocalized spin density.     

Anomalous Hall effect in perpendicular CoFeB thin films

Our recent research achievements in the perpendicular magnetic anisotropy （PMA） properties of the CoFeB sand- wiched by MgO and tantalum layers are summarized. We found that the PMA behaviors of Ta/CoFeB/MgO and MgO/CoFeB/Ta thin films are different. The larger PMA in the latter film is related to the lower magnetization of CoFeB deposited on MgO. Furthermore, we have demonstrated a large anomalous Hall effect in perpendicular CoFeB thin fihn. Our results show large anomalous Hall resistivity, large longitudinal resistivity, and low switching field can be achieved, all at the same time, in the perpendicular CoFeB thin film. Anomalous Hall effect with high and linear sensitivity is also found in an MgO/CoFeBFFa thin film with a thick MgO layer, which opens a door tbr future device applications of perpendicular ferromagnetic thin films.     

Resistance metrology based on the quantum Hall effect

The Quantum Hall effect (QHE), a macroscopic effect of solid state physics, provides a universal representation of the unit of resistance which depends on the elementary charge e and the Planck constant h only. If implemented according to specific technical guidelines, the quantum resistance standard can be reproduced with a relative uncertainty below one part in 10⁹. Calibrations of wire resistors in terms of the QHE can be carried out with similarly low uncertainties by using resistance bridges equipped with cryogenic current comparators, the performance of which relies on the magnetic flux sensitivity of superconducting quantum interference devices (SQUID). Using a special connection technique, the fundamental properties of the QHE allow the fabrication of arrays combining a large number of single Hall bars connected in series or in parallel and which demonstrate quantum accuracy. Similar to the case of voltage metrology with Josephson array voltage standards, an improvement of resistance metrology is expected from the availability of quantum Hall array resistance standards (QHARS). The QHE Wheatstone bridge, which is another application of the same connection technique, opens the way to new universality tests of the QHE with a relative uncertainty below one part in 10¹¹. At frequencies in the kilohertz range, the recent progress in the application of coaxial bridges to the QHE allows metrologists to operate a quantum resistance standard with alternating current reaching an accuracy of some parts in 10⁸. Finally, the discovery of the QHE in graphene opens new horizons for the resistance metrology.     

Integer quantum Hall effect in graphite

We present Hall effect measurements on highly oriented pyrolytic graphite that indicate the occurrence of the integer quantum-Hall-effect. The evidence is given by the observation of regular plateau-like structures in the field dependence of the transverse conductivity obtained in van der Pauw configuration. Measurements with the Corbino-disk configuration support this result and indicate that the quasi-linear and non-saturating longitudinal magnetoresistance in graphite is governed by the Hall effect in agreement with a recent theoretical model for disordered semiconductors.