共查询到18条相似文献,搜索用时 265 毫秒
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利用磁控溅射和Sr成分的调制以及原位热处理方法,在10mm×10mm大小的(001) 取向SrTiO3单晶衬底上制备出三明治结构为La0.7Sr0.3MnO3(100nm)/La0.96Sr0.04MnO3 (5nm)/ La0.7Sr0.3MnO3 (100nm) 的隧道结外延薄膜,然后再次 利用磁控溅射方法,在三层单晶膜上方继续沉积Ir22Mn78(15n m)/Ni79Fe21(5nm)/Pt(20nm)等金属三层膜.最后利用深紫外曝 光和Ar离子束刻蚀等微加工技术,制备出长短轴分别为12和6μm或者8和4μm大小的椭圆形L a1-xSrxMnO3成分调制的复合磁性隧道结.在4.2K和 外加磁场8 T的测试下,La1-xSrxMnO3成分调制的复 合磁性隧道结其隧穿磁电阻(TMR)比值达到3270%, 直接从实验上证实了铁磁性La0.7 sub>Sr0.3MnO3金属氧化物的自旋极化率(97%)可接近100%,具 有很好的半金属性质.
关键词:
1-xSrxMnO3')" href="#">La1-xSrxMnO3
半金属
成分调制
复合磁性隧道 结
隧穿磁电阻 相似文献
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利用磁控溅射方法沉积双势垒磁性隧道结多层膜, 其中Al-O势垒层由等离子体氧化1 nm厚的 金属铝膜方式制备,然后采用深紫外光曝光和Ar离子刻蚀技术、微加工制备出长短轴分别为 6和3 μm大小的椭圆形双势垒磁性隧道结(DBMTJ),并在室温和低温下对其自旋电子输运 特性进行了研究. DBMTJ的隧穿磁电阻(TMR)比值在室温和42 K分别达到27%和423%, 结电阻分别为136 kΩ·μm2和175 kΩ·μm2,并在实验中观 察到平行状 态下存在低电阻态及共振隧穿效应,反平行态下呈现高电阻态以及TMR随外加偏压或直流电 流的增加而发生振荡现象. 由此,设计了一种基于这种双势垒磁性隧道结隧穿特性的自旋晶 体管.
关键词:
双势垒磁性隧道结
隧穿磁电阻
共振隧穿效应
自旋晶体管 相似文献
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利用金属掩模法和Ir22Mn78合金反铁磁钉扎层,制备了四种钉扎型的Py/Al2O3/Py,Py/Al2O3/Co,Co/Al2O3/Py和Co/Al2O3/Co磁性隧道结,坡莫合金的成分为Py=Ni79Fe21.例如:利用狭缝宽度为100?μm的金属掩模,直接制备出室温隧穿磁电阻比值为17.2%的磁性隧道结Co/Al2O3/Co,其结电阻为76Ω,结电阻和结面积的积矢为76×104Ωμm2,自由层的偏转场为1114?A/m,并且在外加磁场0.1114A·m-1之间时室温磁电阻比值
关键词:
磁性隧道结
隧穿磁电阻
磁随机存储器
金属掩模 相似文献
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就如何在4英寸热氧化硅衬底上沉积高质量的磁性隧道结纳米多层薄膜材料和如何利用光刻方法微加工制备均匀性较好的磁性隧道结方面做了初步研究,并对磁性隧 道结的磁电性质及其工作特性进行了初步测量和讨论.利用现有的光刻设备和工艺条 件在4英寸热氧化硅衬底上直接制备出的磁性隧道结,其结电阻与面积的积 矢的绝对误差在10% 以内,隧穿磁电阻的绝对误差在7% 以内,样品的磁性隧道结性质具有较好的均匀性和一致性,可以满足研制磁随机存储器存储单元演示器件的基本要求.
关键词:
磁性隧道结
隧穿磁电阻
磁随机存储器
4英寸热氧化硅衬底 相似文献
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以NiFeNb为种子层,制备(Ni79Fe21)1-xNbx(5nm)/(Ni79Fe21) (20nm)/Ta(3nm)系列膜,并对其颗粒大小、 磁滞回线及表面粗糙度等进行测量,探讨种子层中Nb含量x对坡莫合金磁滞回线的影响.结果 表明,以NiFeNb作种子层能更好地改善坡莫合金的微结构. Nb含量为23%时的磁滞回线有最 小的最大磁能积、矫顽力.种子层影响坡莫合金磁滞回线的一个重要原因是脱附激活能等因 素造成种子层具有不同的表面粗糙度,进而使坡莫合金具有不同的微结构和磁性能.
关键词:
NiFeNb种子层
坡莫合金
磁滞回线
粗糙度 相似文献
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在MgO单晶势垒磁性隧道结中发现的室温高隧穿磁电阻现象,是近些年自旋电子学以及磁性隧道结磁电阻材料研究中的又一重大突破。本文主要评述和介绍2001年以来MgO单晶势垒磁性隧道结第一性原理计算和实验上的重要进展,以及介绍利用Layer-KKR第一性原理计算方法研究的Fe(001)/MgO/Fe、Fe(001)/FeO/MgO/Fe、Fe(001)/Mg/MgO/Fe、Fe(001)/Co/MgO/Co/Fe和Fe(001)/MgO/Fe/MgO/Fe等基于单晶MgO(001)单势垒及双势垒磁性隧道结材料的电子结构和自旋相关输运性质研究的最新进展。这些第一性原理定量计算的结果,不仅从物理上增强了对MgO单晶势垒磁性隧道结的电子结构和自旋相关输运特性的了解,而且对于研究新型室温磁电阻隧道结材料及其在自旋电子学器件中的广泛应用,具有一定的参考价值。 相似文献
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H.X. Wei T.X. WangZ.M. Zeng X.Q. ZhangJ. Zhao X.F. Han 《Journal of magnetism and magnetic materials》2006
The controlled fabrication method for nano-scale double barrier magnetic tunnel junctions (DBMTJs) with the layer structure of Ta(5)/Cu(10)/Ni79Fe21(5)/Ir22Mn78(12)/Co60Fe20B20(4)/Al(1)–oxide/Co60Fe20B20(6)/Al(1)–oxide/Co60Fe20B20(4)/Ir22Mn78(12)/Ni79Fe21(5)/Ta(5) (thickness unit: nm) was used. This method involved depositing thin multi-layer stacks by sputtering system, and depositing a Pt nano-pillar using a focused ion beam which acted both as a top contact and as an etching mask. The advantages of this process over the traditional process using e-beam and optical lithography in that it involve only few processing steps, e.g. it does not involve any lift-off steps. In order to evaluate the nanofabrication techniques, the DBMTJs with the dimensions of 200 nm×400 nm, 200 nm×200 nm nano-scale were prepared and their R–H, I–V characteristics were measured. 相似文献
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Y.K. Takahashi T. Ohkubo K. Hono S. Okamura N. Tezuka K. Inomata 《Journal of magnetism and magnetic materials》2007
The microstructures of Co2FeAl and Co2(Cr0.4Fe0.6)Al sputtered films and of their magnetic tunnel junctions (MTJs) have been investigated to discuss the possible reasons for an unexpectedly low tunneling magnetoresistance (TMR). The structure of the Co2FeAl film changed from B2 to L21 with increasing substrate temperature, while that of the Co2(Cr0.4Fe0.6)Al film remained B2 up to 500 °C. The thermodynamically predicted phase separation was not observed in the films. The low TMR values obtained from the MTJs using the Co2FeAl and Co2(Cr0.4Fe0.6)Al films are attributed to the low-spin polarization expected from the low degree of order in these films. The TMR values depend sensitively on the interfacial structure of the tunnel junctions when the degree of order of the film is low. 相似文献
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The demagnetizing field of a Co50Fe50 free layer in an in-planemicron-sized magnetic tunnel junction (MTJ) can be partially compensated by exchangecoupling with a [Co90Fe10/Pt] N multilayer with perpendicular magnetic anisotropy via a Ru interlayer. The perpendicularanisotropy for N = 5 is optimized for nominal CoFe and Pt thicknessof 0.4 nm and 1.0 nm, respectively. An increase of tunnel magnetoresistance (TMR) from 2%to 75% is observed in MTJs as the free layer thickness, t variesfrom 1.0 nm to 3.0 nm. A phenomenological model is developed to interpret the TMRdependence in terms of the free layer magnetization rotation from in-plane to out-of-planewith decreasing t, a consequence of interlayer exchange coupling with theperpendicular multilayer. We suggest that this strategy could significantly reduce theswitching current density in such MTJs. 相似文献
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Thamrongsin Siripongsakul Andras Kovacs Amit Kohn Mikihiko Oogane Yasuo Ando 《哲学杂志》2016,96(4):310-319
The Co40Fe40B20(CFB)/MgO/CFB/MgO/CFB-based multilayer was prepared by conventional magnetron sputtering and utilised in the fabrication of double magnetic tunnel junctions (DMTJs) for which the middle CFB layers were island-shaped. By analysing the magnetic property of the CFB islands with Langevin’s equation, it was possible to identify their diameters of 7.6, 8.9 and 11.0 nm; accordingly submicron-scaled DMTJs were fabricated to investigate single-spin transport phenomena. The coulomb staircase and the oscillatory tunnel magnetoresistive (TMR) were able to be observed at 6 K, where the TMR ratio was enhanced up to 60%, which is the highest value ever achieved in this structure. 相似文献
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A high resistance ferromagnetic oxide Fe2⋅5Mn0⋅5O4 (FMO) property as a novel spin injector was investigated with a structure of a magnetic tunneling junction (MTJ) composed of FMO/Al-O/Ni80Fe20, in order to reduce an impedance mismatch problem on molecular spintronics. A tunneling magnetoresistance (TMR) effect in the MTJs was observed. The maximum TMR ratio observed in the MTJs was approximately 0.85% at room temperature (RT), and the spin-polarization of FMO was estimated to be at least 0.94% at RT. 相似文献
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MgO-based magnetic tunnel junctions (MTJs) with a layer sequence Ir22Mn78 or Fe50Mn50 (10 nm)/CoFe (2 nm)/Ru (0.85 nm)/CoFeB (0.5?t<2 nm)/MgO (2.5 nm)/CoFeB (3 nm) have been fabricated. The bias voltage dependence of tunneling magnetoresistance (TMR) is given as a function of the annealing temperature for these MTJs, which shows the TMR ratio changes its sign from inverted to normal at a critical bias voltage (VC) when an unbalanced synthetic antiferromagnetic stack CoFe/Ru/CoFeB is used. VCs change with the thickness of the pinned CoFeB and annealing temperature, which implies one can achieve different VCs by artificial control. The asymmetric VC values suggest that a strong density-of-states modification occurs at bottom oxide/ferromagnet interface. 相似文献
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P.S. Keatley V.V. Kruglyak R.J. Hicken J.R. Childress J.A. Katine 《Journal of magnetism and magnetic materials》2006
A modified scanning Kerr microscope has been used as a static Kerr magnetometer to acquire in-plane vector hysteresis loops from square Si/Ta(50 Å)/Co80Fe20(40 Å)/Ni88Fe12(108 Å)/Ta(100 Å) elements with size ranging from 123 nm to 10 μm. The nanoscale elements were arranged in square arrays of 4 μm size. The laser beam was focused to a sub-micron spot, while polarization changes were recorded with an optical bridge detector containing a beam-splitting polarizer and two quadrant photodiodes. The coercive field exhibited a non-monotonic increase from 11 Oe in the 10 μm element to 170 Oe in the 123 nm elements. Loops acquired with the field applied parallel to the easy and hard in-plane uniaxial anisotropy axes were observed to become more similar in shape as the element size decreased. 相似文献
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We present a study of thermal stability of the top spin valve with a structure of seed Ta (Snm)/Co75Fe25 (5 nm ) /Cu (2.5 nm) /Co75Fe25 (5 nm ) /Ir20Mn80(12 nm) /cap Ta (8 nm) deposited at room temperature by magnetron sputtering. A vibrating sample magnetometer fixed with a heater was used to record the magnetic hysteresis loops at variational temperatures and x-ray diffraction was performed to characterize the structure of the multilayer. The exchange field Hex and the coercivity of the pinned CoFe layer Hop decrease monotonically with increasing temperature. The coercivity of the free CoFe layer Hcf in the spin valve shows a maximum at 498K. The temperature dependences of Hex, Hop and Hcf have also been discussed. 相似文献