Structural and electrophysical characteristics of YBCO films on sapphire

We present experimental results for the structural and electrophysical characteristics of YBCO films deposited on sapphire substrates without an interface layer. The films were deposited by laser sputtering of a target. We establish certain relationships between the structural and electrophysical characteristics of the films. We show the films’ electrophysical parameters are determined by the number of "defective" blocks whose [010] axes are at random angles relative to the [100] axis of the substrate. V. D. Kuznetsov Siberian Physicotechnical Institute, Tomsk University. Translated from Izvestiya Vysshikh Uchebnykh Zaved, Fizika, No. 5, pp. 75–78, May, 1998.     

Nanoindentation characterization of GaN epilayers on A-plane sapphire substrates

Gallium nitride (GaN) epilayers was deposited on a-axis sapphire substrate by means of metal-organic chemical vapor deposition (MOCVD) method. The GaN epilayers has been investigated in their repetition pressure-induced impairment events from nanoindentation technique and, the relative deformation effect was observed from atomic force microscopy (AFM). From the morphological studies, it is revealed that none of crack and particle was found even after the indentation beyond the critical depth on the residual indentation impression. The ‘pop-in’ event was explained by the interaction of the deformed region, produced by the indenter tip, with the inner threading dislocations in the GaN films. Pop-in events indicate the generation and motion of individual dislocation, which is measured under critical depth and, no residual deformation of the GaN films is observed.     

Wafer-level fabrication and optical characterization of nanoscale patterned sapphire substrates

The wafer-level aperiodic nanostructures were fabricated atop the sapphire substrates in order to increase the transmittance over broadband spectra. The fabrication was presented along with characterization of their optical properties. The nanostructures were patterned using natural lithography with nickel silicide as a hard mask, and the subsequent etching was performed using inductively coupled plasma dry-etching method. The sapphire substrates with nanostructures compared to conventional sapphire substrates, which exhibit antireflective characteristics over broadband spectra at a wide range of incident angles. The nanostructures reduce the reflection down to 5% in the visible spectrum for normal incidence. The transmittance of visible to near-IR spectra was found to be 94% at normal incidence and over 90% at an incident angle of 45°. In the mid-IR spectrum, the transmittance exceeds 88% until the reflection is no longer suppressed by nanostructures. The polarization properties have also been investigated. The nanostructures can enhance the reflectivity ratio 90% for wavelengths shorter than 400 nm. As the amplitude ratio, enhanced from 50% to 80% over the whole visible spectrum.     

白宝石衬底上生长的MgxZn1-xO晶体薄膜的结构和光学性能

在白宝石 (sapphire)衬底上低温外延生长出了MgxZn1 -xO晶体薄膜 .x射线衍射 (XRD)及能量色散x射线 (EDX)分析表明 ,MgxZn1 -xO薄膜的晶体结构依赖于薄膜中Mg的组分x,随着Mg组分的增大 ,MgxZn1 -xO薄膜的结构从与ZnO晶体一致的六方结构转变为与MgO晶体一致的立方结构 .对MgxZn1 -xO薄膜的紫外透射光谱及紫外光致荧光谱 (UVPL)的分析表明 ,随着Mg组分的增大 ,光学吸收边产生明显的蓝移 ,表明MgxZn1 -xO晶体薄膜的带隙增大 ,且带隙连续可调 .吸收光谱和XRD测量显示 ,带隙高达 5 6 5eV的MgxZn1 -xO晶体薄膜与MgO之间的晶格失配仅为0 16 % .     

20TW超短脉冲激光装置的研制

 介绍了基于啁啾脉冲放大技术的20TW全钛宝石超短脉冲激光装置的研制。该装置的主放大器采用全像传递的空间四程放大构型，可以保持良好的近场分布和提高能量转换效率。主放大器的钛宝石晶体为30mm×15mm，6台调Q倍频的YAG激光器泵浦。压缩后脉宽50fs，能量1J，峰值功率可达20TW，聚焦功率大于3×10¹⁸W/cm²。     

Noise characterization of an all-solid-state mirror-dispersion-controlled 10-fs Ti:sapphire laser

We characterized the phase and amplitude noise of a mirror-dispersion-controlled 10-fs Ti:sapphire laser pumped by a frequency-doubled cw diode-pumped Nd:YVO₄ laser and compared with these of the Ti:sapphire laser pumped by an Ar-ion laser. The rms timing jitters and rms amplitude noise for the all-solid-state and Ar-ion laser pumped Ti:sapphire lasers are calculated to be 0.31 ps rms and 0.71 ps rms and 0.15% rms and 0.32% rms, in the frequency range from 20 kHz to 400 kHz, respectively. The phase and amplitude noise characteristics of the Ti:sapphire laser were greatly improved by using the diode-pumped solid state laser as a pump source.     

Structural characterization of nanopatterned surfaces

In this work, chemically and topographically nanopatterned surfaces were produced by a top-down processing approach for biosensing devices. The nanopatterning was the result of the combination of plasma polymerisation (pp) of biofunctional materials and colloidal lithography techniques. The morphological and chemical properties induced by the plasma deposition-etching treatment were characterised by optical method combining ellipsometry and Fourier Transform Infrared spectroscopy studies. This method supported by atomic force microscopy measurements, allowed the full optical characterization of each step of the top-down process. The optical characterization of the end-up nanopatterned samples demonstrated that the chosen process is able to produce well-defined nanostructured surfaces with controlled chemical and morphological properties.     

Structural characterization of self-organized nanostructures

Self-organized nano-objects fabricated in different semiconductor systems are currently at the focus of scientific interest because of their unique electronic properties. Transmission electron microscopy and high-resolution electron microscopy have been used to study the InAs quantum dots grown by molecular-beam epitaxy (MBE) on GaAs and InP substrates. Optimal imaging conditions for visualization of quantum dots were established. Size, shape, and stability of the equilibrium island arrays were analyzed with respect to the growth conditions. Both decrease and increase of the As pressure compared to the optimal value were shown to destroy the regular arrangement of the islands. Energy benefit due to the strain relaxation in the InAs islands is likely to be the driving force for their formation. Fiz. Tverd. Tela (St. Petersburg) 40, 849–851 (May 1998) Published in English in the original Russian journal. Reproduced here with stylistic changes by the Translation Editor.     

Structural characterization of long ZnSe nanowires

ZnSe nanowires have been synthesized by vapor transport in an Ar atmosphere. The synthesized ZnSe nanowires have a thickness of 20 to 120 nm and a length of tens of micrometers. The nanowires are single crystals with a cubic zinc-blende structure growing along the [111] direction. The as-synthesized nanowires display rich Raman modes and one photoluminescence band peaking at around 450 nm. PACS 78.67.Bf; 81.07.Bc; 61.46.+w     

白宝石衬底上生长的MgxZn1-xO晶体薄膜的结构和光学性能

在白宝石（sapphire）衬底上低温外延生长出了Mg_xZn_1-xO晶体薄膜.x射线衍射（XRD）及能量色散x射线（EDX）分析表明，Mg_xZn_1-xO薄膜的晶体结构依赖于薄膜中Mg的组分x，随着Mg组分的增大，Mg_xZn_1-xO薄膜的结构从与ZnO晶体一致的六方结构转变为与MgO晶体一致的立方结构.对Mg_xZn_1-xO薄膜的紫外透 关键词： 电子束蒸发反应 xZn_1-xO晶体薄膜')" href="#">Mg_xZn_1-xO晶体薄膜 结构和光学性能     

Structural and optical characterization of wurtzite type ZnS

ZnS films were grown on (001) GaAs substrates at different temperatures by RF magnetron sputtering. The ZnS chemical stoichiometry was determined by Energy-dispersive X-ray spectroscopy (EDS), besides it allowed to find the residual impurities, mainly oxygen. The X-ray diffraction (XRD) analysis and Raman scattering reveal that ZnS deposited thin films showed hexagonal wurtzite crystalline phase. The films average crystallite size range was from 8.15 to 31.95 nm, which was determined using the Debye–Scherrer equation for the peak W(101). Besides an experimental study of first- and second-order Raman scattering of ZnS films is made. An energy level diagram involving oxygen traps and interstitial sulphur ions is used to explain the origin of the radiative transitions observed in the room temperature photoluminescence (PL) spectra.     

Structural characterization of Rh/pumice SMAD catalysts

The structure of Rh/pumice catalysts prepared by the SMAD (Solvated Metal Atoms Dispersion) technique at different metal loadings has been investigated by EXAFS (Extended X-ray Absorption Fine Structure Spectroscopy), XPS (X-ray Photoelectron Spectroscopy), SAXS (Small-Angle X-ray Scattering), WAXS (Wide-Angle X-ray Scattering) and TEM (Transmission Electron Microscopy). According to EXAFS and XPS, a fraction of the Rh atoms is oxidised, but a noticeable part is also present as Rh ⁰. The Rh oxidation is attributed to the interaction of the Rh atoms with the hydroxyls of the support; after the formation of the oxide, the nucleation of metallic rhodium becomes possible. The WAXS data do not show evidence of rhodium fcc crystallites; the metal-bearing particles are probably amorphous and/or very small, as results from the SAXS and TEM data analysis. The disagreement between the latter two techniques, resulting in a small-angle determination of the average size of the particles that is about half that of TEM in the catalyst with the higher Rh loading, is acknowledged and discussed. Preliminary catalytic tests are described, demonstrating the suitability of using a low surface area support for the preparation of SMAD catalysts. Received 2 February 1999     

Structural characterization of MgO(100) surfaces

The structure, the microtopography and the cleanliness of MgO(100) surfaces have been investigated by a combination of thermal helium scattering, surface decoration and Auger spectroscopy. The microstructure and cleanliness are strongly dependent on the preparation of the surface. MgO surfaces obtained by cleavage under UHV are clean and present a high coefficient for coherent He reflection. MgO surfaces prepared by cleavage in air are contaminated and irreversibly damaged by water vapour. Such surfaces can be cleaned by vacuum annealing but the coefficient of coherent He reflection remains low because of the presence of a high number of defects.     

Structural and spectroscopic characterization of the quenched hexacelsian

The hexacelsian with disorder distribution of the Si⁴⁺ and Al³⁺ is synthesized by thermally induced transformation of a Ba-LTA zeolite. The initial Ba-LTA zeolite is annealed and quenched to room temperature. The crystal structure and microstructure i.e. long-range ordering is investigated from the polycrystalline material by the Rietveld refinement procedure while short-range ordering is investigated by the ²⁹Si and ²⁷Al MAS NMR, Raman and luminescence (Eu³⁺ doped hexacelsian) spectroscopy's. The crystal structure (space group P6₃/mcm) and microstructure (size-strain analysis) results indicate disorder distribution of the Si⁴⁺ and Al³⁺. Analysis of the spectra indicates disorder distribution of the Si⁴⁺ and Al³⁺ (²⁹Si and ²⁷Al MAS NMR spectroscopy), dynamical disorder in the structure and site symmetry lowering for the Ba²⁺ site at a low temperature (Raman and luminescence spectroscopy's).     

Structural and optical characterization of the propolis films

We have performed structural and optical characterizations of the propolis (an organic entity of biological nature) films grown on various non-organic substrates. The films were grown from a propolis melt or a propolis alcohol solution. The crystal structure has been observed in the films precipitated from the solution onto substrates such as an amorphous glass and sapphire or semiconductor indium monoselenide. For any growth method, the propolis film is a semiconductor with the bandgap of 3.07 eV at 300 K that is confirmed by a maximum in photoluminescence spectra at 2.86 eV. We argue that propolis films might be used in various optoelectronic device applications.     

Structural characterization of microwave-synthesized zinc-substituted cobalt ferrite nanoparticles

Microwave combustion technique modified by post treatment procedure is used to synthesize single-phase spinel ferrites of cobalt, zinc, and substituted magnetic nanoparticles of typical size 390 Å. The post treatment does not alter the crystal structure but increases the crystallinity. This is confirmed by powder x-ray diffraction and Fourier Transform Infrared (FTIR) studies. Citric acid is used as a fuel. The fresh synthesized sample shows an impurity phase in x-ray and in FTIR. This is due to the unreacted citrate molecule adsorbed on the particle surface. It is shown that by treating the sample with 0.1 M HCl, we can eliminate the impurity phase, and one can obtain a pure single phase. The magnetization at 8 kOe increases by nearly 8% after the removal of impurity. In order to remove surface adsorbed OH^? ion, samples are treated with NaCl and heated to 200°C for four hours. The XRD result indicates that after the treatment neither the crystallite size nor the distribution changes, but it removes OH^? ion. This is also confirmed by FTIR analysis. Thus, this modified technique can be used to synthesize pure nanocrystalline samples of spinel ferrites.     

Structural characterization of nickel-titanium film on silicon carbide

The presented work describes behavior of contact structures of Ni/Ti type on 6H-SiC n-type. The best contact resistivity obtained is 3.3 × 10⁻⁴ Ω cm². The structure showed excellent thermal stability, it was stable after being tested for 10 h at 900 °C. XRD analysis after annealing at 960 °C revealed orthorhombic Ni₂Si as the dominate phase.     

Gallium-diffused waveguides in sapphire

The fabrication and characterization of gallium-diffused planar waveguides in sapphire are reported. Waveguides were fabricated by diffusion of 60-200-nm-thick films of gallium oxide into c -cut sapphire at 1600 degrees C for times ranging from 6 to 16 h. Near-field intensity profiles of the guided modes were measured at wavelengths from 488 to 850 nm, and the surface-index elevation was estimated to be up to (0.6+/-0.02)x10(-2) . Potential applications for low-threshold Ti:sapphire waveguide lasers and for optical integrated circuits with passive and active elements in sapphire are discussed.     

Production and characterization of Ti:sapphire thin films grown by reactive laser ablation with elemental precursors

Crystalline Ti:sapphire (Ti:Al(2)O(3)) thin films were grown at low temperatures upon Al(2)O(3) (0001) substrates by reactive crossed-beam laser ablation at 248 nm by use of a liquid Ti-Al alloy target and O(2) . The films were investigated ex situ by x-ray diffraction, x-ray photoelectron spectroscopy, and Rutherford backscattering spectrometry. Low-temperature luminescence was identical to that for Ti(3+) ions in bulk samples of Al(2)O(3) .