Topography and nanomechanical properties of Pd-C films

Atomic force microscopy (AFM) topographical studies and results of nanoindentation experiment for several palladium-carbon films (Pd-C film) deposited on various substrates and with varying palladium content are presented. Pd-C films were prepared by a physical vapor decomposition (PVD) process and next were modified by a chemical vapor decomposition (CVD) method to obtain carbonaceous porous structure with dispersed palladium nanograins and a variation in roughness.     

Intensity studies in Raman effect

The intensities of Raman lines due to CH, CH₂ and CH₃ groups in the case of some n-paraffin hydrocarbons have been obtained relative to the peak intensity of the 458 cm^?1 line of CCl₄ and compared. The integrated intensity as well as the standard intensity of the C=O frequency in some unconjugated and conjugated ketones, aldehydes and esters have been obtained and the influence of conjugation has been discussed. The intensity of the C=C frequency has also been obtained in the conjugated compounds and compared with the results obtained for the unconjugated compounds.     

Intensity studies in Raman effect

The dependence of the relative intensities of Raman lines, having different polarisation characters, on the mode of excitation has been studied using unpolarised, horizontally and vertically polarised incident light. Standard intensities have been obtained in the cases of CCl₄, CHCl₃, C₆H₆, C₂Cl₄, C₂H₂Cl₂, C₂H₄Cl₂, C₆H₅Cl, C₆H₅CH₃ and C₆H₅CH₂OH with the intensity of the 458 cm^?1 line of CCl₄ as standard and from these, the values ofα′, the derived polarisability, have been obtained in the case of total symmetric lines characteristic of particular bonds and certain conclusions regarding the intensity variations of corresponding lines in the different liquids have been arrived at. Values of derived anisotropy have also been obtained in the case of the depolarised lines relative to that of 313 cm^?1 line in CCl₄.     

Raman spectroscopic studies of LixSiy compounds

The phase diagram of the Li–Si system contains several phases with Li and Si in well defined ratios. So far, only the Raman spectrum of LiSi has been reported. In this work, we present experimental Raman scattering results for the crystalline lithium silicide phases Li₁₂Si₇, Li₇Si₃, Li₁₃Si₄, and Li₂₁Si₅/Li₂₂Si₅, which show clearly distinguishable Raman modes. The experimental results are compared with theoretical data obtained by density functional theory calculations. Copyright © 2013 John Wiley & Sons, Ltd.     

Raman spectroscopic studies of planar gettering effects

Raman scattering spectroscopy is used to study the elastic stress distribution in the epitaxial silicon operating areas in the vicinity of planar getter areas, the latter being created by previous ion implantation of the substrate. Data concerning the effect of the operating element size and the dose of implantation into the getter area are obtained. The results are compared with those of X-ray topographic analysis of the structures.     

X-ray photoelectron spectroscopy studies on core-shell structured nanocomposites

Core-shell nanostructures were grown in silica-based glasses. Copper-copper oxide and iron-iron oxide structures had diameters in the range 3-6 nm, with shell thicknesses ∼1-2 nm. Silver-lithium niobate core-shell nanostructures had diameters in the range 4.2-46 nm and thicknesses varying from 2.2 to 22 nm. X-ray photoelectron spectroscopy studies were carried out on all these specimens. The analyses of these results show the presence of Cu⁺/Cu²⁺, Fe²⁺/Fe³⁺ and Nb⁴⁺/Nb⁵⁺ valence states in the above three systems. Electrical resistivity data were fitted satisfactorily to the small polaron hopping model in the case of copper and iron-containing specimens. The presence of ions in the lithium niobate shell provides direct evidence of the formation of localized states between which variable range hopping conduction can be effected.     

Acoustic studies of phase transitions in crystals and nanocomposites

A brief review of acoustic studies of phase transitions in crystals (ferroelectric, ferroelastic, and superionic ones) and nanostructured composite materials made on the basis of porous matrices is presented. The studies were carried out at the Laboratory of Quantum Acoustics and Ultrasonic Spectroscopy of the St. Petersburg State University.     

Raman studies of the thermal oxide of silicon

We report the Raman spectra of silicon oxide films that have been formed by the wet oxidation of Si wafers at ～ 10 atmospheres of steam and at temperatures near 800° C. Apart from small features due to differing water content, the Raman spectra are identical to those of melt-quenched fused silica that has been annealed at the film growth temperature. We detect no growth anisotropy and conclude that the gross structures are the same, that numerous properties of steam oxide films can be safely inferred from measurements on appropriately annealed samples of bulk fused silica, and vice-versa.     

Raman scattering studies on manganese ion-implanted GaN

This paper reports that the Raman spectra have been recorded on the metal-organic chemical vapour deposition epitaxially grown GaN before and after the Mn ions implanted. Several Raman defect modes have emerged from the implanted samples. The structures around 182 cm^-1 modes are attributed to the disorder-activated Raman scattering, whereas the 361 cm^-1 and 660 cm^-1 peaks are assigned to nitrogen vacancy-related defect scattering. One additional peak at 280 cm^-1 is attributed to the vibrational mode of gallium vacancy-related defects and/or to disorder activated Raman scattering. A Raman-scattering study of lattice recovery is also presented by rapid thermal annealing at different temperatures between 700 °C and 1050 °C on Mn implanted GaN epilayers. The behaviour of peak-shape change and full width at half maximum (FWHM) of the A₁(LO) (733 cm^-1) and E^H₂ (566 cm^-1) Raman modes are explained on the basis of implantation-induced lattice damage in GaN epilayers.     

High pressure Raman studies on solid iodine

Abstract

Raman spectra of solid iodine were measured up to 27 GPa. Additional bands, whch appear above 10 GPa, are discussed with respect to a quasi one dimensional molecular phase existing at intermediate pressures and may indicate a more subtle way of molecular dissociation than previously suggested. Higher order spectra due to two-and three phonon processes involving internal and external modes were observed up to 10 GPa.     

High temperature Raman spectroscopy studies of carbon nanowalls

High temperature Raman experiments were carried out on carbon nanowalls (CNWs). The intensity of the defect‐induced D mode decreased significantly after the sample was heated in air ambient. The Raman intensity ratio of D mode and G mode, I_D/I_G, changed from 2.3 at room temperature to 1.95 after the sample was heated to 600 °C. This change was attributed to the removal of surface amorphous carbon by oxidation. In contrast to I_D/I_G, the intensity ratio of the D′ mode and the G mode, I_D′/I_G, did not change much after heating, indicating that the surface amorphous carbon and surface impurity do not contribute as much to the intensity of the D′ mode. The dominant contributor to the D′ mode could be the intrinsic defects. Copyright © 2007 John Wiley & Sons, Ltd.     

Raman spectroscopic studies of ZnSe/GaAs interfaces

ZnSe/semi‐insulating GaAs interfaces were studied by observing photogenerated plasmon–LO (PPL) coupled modes by nonresonant micro‐Raman spectroscopy. The effect of the carriers generated by the focused laser beam was investigated for a series of different thicknesses of ZnSe epitaxial layers. The PPL mode in GaAs was observed in the micro‐Raman spectra for all samples, but with different magnitude. The plasma is believed to be an electron gas as a result of the negative nature of the interfacial region that contains predominantly hole traps. The free carrier concentration is estimated to be > 10¹⁸ cm⁻³ and their lifetime ∼0.1 ns. This relatively long lifetime suggests that the ZnSe/GaAs interface has to be of high structural quality leading to a low recombination velocity. ZnSe/GaAs heterostructures of less crystalline quality (as determined by resonant Raman measurements) shows the effect of photogenerated carriers only to lesser extent. Copyright © 2007 John Wiley & Sons, Ltd.     

双酚A拉曼光谱的密度泛函理论计算及表面增强拉曼光谱研究

以密度泛函理论(DFT),RB3LYP/6-311G(d)方法计算得到的双酚A(BPA)分子振动光谱为依据,对BPA分子常规拉曼光谱进行了详细的指认,对其振动模式进行了归属.研究了BPA在金胶体系中的表面增强拉曼光谱,对其吸附方式进行了分析:BPA分子在酸性pH下,分子以=CO-吸附到金溶胶上,-OH键的振动消失,苯环以直立方式垂直于金胶上.     

若干低维材料的拉曼光谱学研究*——2004年度国家自然科学二等奖获奖项目介绍

文章扼要介绍了2004年国家自然科学二等奖获奖项目：《若干低维材料的拉曼光谱学研究》1).用拉曼光谱研究低维纳米材料,必须对传统拉曼光谱学进行改造,创建新的“低维拉曼光谱学”.该项目通过若干低维材料的研究,为创建低维拉曼光谱学作出了系统的创新性贡献,如最先鉴认出典型低维材料的拉曼指纹谱,发现拉曼光谱的两个基本特征出现“反常”,但证明拉曼散射基本原理在低维体系中依然成立.通过低维拉曼光谱和光发射谱的应用研究,发现了材料的许多新奇物性,如发现超晶格和碳纳米管是类缺陷结构,和极性半导体纳米晶材料具有非晶特性,并提出了多孔硅的“量子限制电化学”形成和“多源量子阱”光发射模型,促进了低维材料和半导体器件的制备.     

Raman studies of nonlinear phenomena in fullerene crystallites

The resonant Raman scattering of C₆₀ crystallites is monitored as a function of excitation intensity at 514.5 nm. At low intensities, a strong line at 1468 cm^–1 is observed. No feature at 1459 cm^–1 is observable. With increasing intensities, the 1468 cm^–1 line shifts continuously and reversibly to lower frequencies. The mode softening is nonlinearly dependent on the input intensity and is accompanied by a nonlinear increase in the Raman intensity. The spectral changes are discussed in terms of a nonlinear reduction in force constant and increase in bond polarisability as a result of an increased intermolecular delocalisation of the -electron cloud. The nonlinear changes are associated with the nonlinear luminescence and photoconductive response observed in fullerenes and are contrasted to the irreversible phototransformation recently discussed.     

Raman studies of hydrogen vibrational modes in palladium

The phonon density of states of substoichiometric polycrystalline Pd-H(D) was investigated by Raman Scattering above and below the 50 K anomaly. The Raman spectra for hydrogen and deuterium were found to be asymmetric and peaked at 58.5 meV and 39.7 meV respectively, in near agreement with inelastic neutron scattering data. The scattering mechanism appears to require hydrogen-hydrogen interactions. No major changes in the optical spectra were observed in going through the 50 K anomaly.     

Raman and SERS studies of carbon nanotube systems

In this paper, we report on Raman studies carried out on different carbon nanotube systems, namely single-walled and multi-walled carbon nanotubes and polymer/nanotube composites. We focus on different types of interactions which can take place in these materials. In single-walled nanotubes, the introduction of van der Waals interactions between tubes when arranged in bundles leads to an upshift of the radial breathing mode (RBM) ranging from 11 to 16 cm⁻¹ depending on the size of the bundle. In multi-walled carbon nanotubes, similar interactions between concentric tubes permit to interpret the low frequency Raman modes. In composites, PMMA/nanotubes, an upshift of the RBM is also observed, explained by the dynamical strain applied by the polymer on the bundles, in response to the breathing vibration. In addition, surface enhanced Raman scattering experiments have demonstrated the occurrence of interfacial reactions between the nanotubes and the metallic support. This is put in evidence by the degradation of tubes, especially metallic ones, and reconstruction of C₆₀-like molecules are in some cases observed.     

若干低维材料的拉曼光谱学研究--2004年度国家自然科学二等奖获奖项目介绍

文章扼要介绍了2004年国家自然科学二等奖获奖项目：《若干低维材料的拉曼光谱学研究》．用拉曼光谱研究低维纳米材料,必须对传统拉曼光谱学进行改造,创建新的“低维拉曼光谱学”．该项目通过若干低维材料的研究,为创建低维拉曼光谱学作出了系统的创新性贡献,如最先鉴认出典型低维材料的拉曼指纹谱,发现拉曼光谱的两个基本特征出现“反常”,但证明拉曼散射基本原理在低维体系中依然成立．通过低维拉曼光谱和光发射谱的应用研究,发现了材料的许多新奇物性,如发现超晶格和碳纳米管是类缺陷结构,和极性半导体纳米晶材料具有非晶特性,并提出了多孔硅的“量子限制电化学”形成和“多源量子阱”光发射模型,促进了低维材料和半导体器件的制备．