Ab initio pseudopotential study of vacancies and self-interstitials in hcp titanium

By means of an ab initio plane-wave pseudopotential method, monovacancy, divacancy and self-interstitials in hcp titanium are investigated. The calculated monovacancy formation energy is 1.97 eV, which is in excellent agreement with other theoretical calculations, and agrees qualitatively with published experimental results. The relaxation of the atoms around a single vacancy is observed to be small. Two divacancy configurations, the in-plane and the off-plane, have also been shown to be equally stable. With regards to the interstitials, of the eight configurations studied, two (octahedral and basal octahedral) have relatively lower formation energies and are, thus, the most likely stable configurations. We find small energy differences between them, suggesting their possible co-existence. It is also observed that the tetrahedral configuration decays to a split dumbbell configuration, whereas both the basal tetrahedral and the basal pseudocrowdion interstitials decay to the basal octahedral configuration. Using the nudged elastic band method (NEB), we determine a possible minimum energy path (MEP) for the diffusion of self-interstitial titanium atoms from an octahedral site to the nearest octahedral site. The energy barrier for this migration mechanism is shown to be about 0.20 eV.     

A study of mono and divacancies in Cu and Au by positron annihilation

The peak counting rate of the angular correlation curve was measured for Cu and Au in the temperature range between ?196°C and 1200°C. The experimental data were analysed by means of the trapping model under consideration of positron trapping by mono-and divacancies and detrapping of positrons from monovacancies. Such an analysis leads to acceptable results for both monovacancy and divacancy parameters.     

空位的第一性原理及经验势函数的对比研究

利用第一性原理及Stillinger-Weber（SW）,EDIP和Tersoff经验势函数对比研究了硅中单空位(V₁)、双空位(V₂)和六边形空位环(V₆)的结构特性及形成能.讨论了经验势函数描述空位时的优点和缺点.结果发现,第一性原理方法可以精确描述空位的原子结构及能量特性,而短程有效的经验势函数无法描述空位所固有的量子效应,如Jahn-Teller变形等.另外,由于经验势函数自身的缺陷,EDIP和T3无法应用于空位结构特性的计算.虽然 关键词： 空位 第一性原理 经验势函数     

Mechanism of H2S molecule adsorption on the GaAs(100) surface: Ab initio quantum-chemical analysis

Ab initio quantum-chemical cluster calculations within the density-functional theory were carried out to study the mechanism of H₂S molecule adsorption on the gallium-rich surface of GaAs(100). It was shown that adsorption can occur in four stages: molecular adsorption; dissociative adsorption, during which an HS radical is adsorbed on a gallium atom comprising a dimer while the detached hydrogen atom is adsorbed on another surface atom of the semiconductor; hydrogen adatom migration between neighboring surface atoms of the semiconductor; and the formation of a Ga-S-Ga bridge bond and of a hydrogen molecule. The stationary-state energies and energy barriers to transitions between these states were determined. The conclusions drawn based on an analysis of calculated diagrams of the potential energy of the processes that occur are in good agreement with the experimental data available in the literature.     

Vacancy-assisted diffusion in silicon: a three-temperature-regime model

In this Letter we report kinetic lattice Monte Carlo simulations of vacancy-assisted diffusion in silicon. We show that the observed temperature dependence for vacancy migration energy is explained by the existence of three diffusion regimes for divacancies. This characteristic has been rationalized with an analytical model. In the intermediate temperature regime the divacancy dissociation plays a key role and an effective migration energy E{v}{m} approximately 2 eV is predicted, computed from either full ab initio values or mixed with experimental ones. The exact position of this temperature regime strongly depends on vacancy concentration. Previous contradictory experimental results are revisited using this viewpoint.     

Formation of thermal vacancies in highly As and P doped Si

Using positron annihilation measurements we observed the formation of thermal vacancies in highly As and P doped Si. The vacancies start to form at temperatures as low as 650 K and are mainly undecorated at high temperatures. Upon cooling the vacancies form stable vacancy-impurity complexes such as V-As3. We determine the vacancy formation energy of E(f)=1.1(2) eV and the migration energy of E(m)=1.2(1) eV in highly doped Si. By associating these values with the vacancy-impurity pair, we get an estimate of 2.8(3) eV for the formation energy of an isolated neutral monovacancy in intrinsic Si.     

Theoretical study of the effects of vacancy and oxygen impurity on Ti_2GaC

This paper presents the mono-vacancy formation and migration energies of each element Ti, Ga, and C in the MAX phase Ti2GaC, which are obtained by first principles calculations. We also calculate the formation energies of oxygen substituting for Ti, Ga, and C and two formation energies of oxygen interstitial in different sites. The results show that the formation energy of oxygen substituting for Ti is the highest, and the formation energies of the O substitution for Ga atoms decrease as the oxygen concentration increases. The two different formation energies of one oxygen interstitial show that the stable site for the oxygen interstitial is at the center of the triangle composed by three Ga atoms. The effects of vacancy,oxygen substitution, and the interstitial on the electronic properties of Ti2GaC are also discussed in light of the density of states and the electron charge density.     

Construction of embedded-atom-method interatomic potentials for alkaline metals （Li,Na,and K） by lattice inversion

The lattice-inversion embedded-atom-method interatomic potential developed previously by us is extended to alkaline metals including Li,Na,and K.It is found that considering interatomic interactions between neighboring atoms of an appropriate distance is a matter of great significance in constructing accurate embedded-atom-method interatomic potentials,especially for the prediction of surface energy.The lattice-inversion embedded-atom-method interatomic potentials for Li,Na,and K are successfully constructed by taking the fourth-neighbor atoms into consideration.These angular-independent potentials markedly promote the accuracy of predicted surface energies,which agree well with experimental results.In addition,the predicted structural stability,elastic constants,formation and migration energies of vacancy,and activation energy of vacancy diffusion are in good agreement with available experimental data and first-principles calculations,and the equilibrium condition is satisfied.     

The effect of hydrogen and oxygen atoms on the adsorbed gallium inside defective carbon nanotubes

The adsorption of single gallium atoms on the inner walls of single-walled carbon nanotubes with hydrogen/oxygen-saturated monovacancies are studied by using the density functional theory method. When the monovacancy is saturated by the hydrogen or oxygen atom, the gallium atom prefers to adsorb on the top of the center of a pentagon ring, and the binding energy between the gallium atom and carbon nanotube is significantly lower as compared to the case with a pure monovacancy. In addition, the results of the density of states show that the states originating from the adsorbed gallium atoms shift toward lower energy when the carbon atoms with dangling bonds are saturated by hydrogen or oxygen atoms. Meanwhile, these states have no contribution to the states near the Fermi levels.     

First principles molecular dynamics study of nitrogen vacancy complexes in boronitrene

We present the results of first principles molecular dynamics simulations of nitrogen vacancy complexes in monolayer hexagonal boron nitride. The threshold for local structure reconstruction is found to be sensitive to the presence of a substitutional carbon impurity. We show that activated nitrogen dynamics triggers the annihilation of defects in the layer through formation of Stone-Wales-type structures. The lowest energy state of nitrogen vacancy complexes is negatively charged and spin polarized. Using the divacancy complex, we show that their formation induces spontaneous magnetic moments, which is tunable by electron or hole injection. The Fermi level s-resonant defect state is identified as a unique signature of the ground state of the divacancy complex. Due to their ability to enhance structural cohesion, only the divacancy and the nitrogen vacancy carbon-antisite complexes are able to suppress the Fermi level resonant defect state to open a gap between the conduction and valence bands.     

化合物半导体材料的正电子寿命计算

在局域密度理论（LDA）和广义梯度理论（GGA）的基础上计算了ZnO,GaN,GaAs,SiC和InP五种化合物半导体材料中的正电子湮没信息,包括化合物半导体材料中的自由态正电子的湮没寿命;还有不同类型空位（单空位,双空位）附近俘获的束缚态正电子密度分布和湮没率分布,以及束缚态正电子的湮没寿命. 关键词： 半导体 正电子寿命     

Point defect interactions with crystal interfaces

The structures of a small closed system of grain boundaries and the interactions of vacancies with these boundaries has been investigated using computer simulation techniques based on empirical interatomic potentials. The boundaries chosen are the {;111}; and {;112}; twins in both body centred cubic and face centred cubic metals, the potentials used being matched to the physical properties of iron and copper. Two stable structures arise for the {;112};_bcc twin so that effectively five boundaries have been studied. The structures and energies of these are extremely varied, the {;112};_fcc twin in particular being very broad. This influences the binding of vacancies to the boundaries and the migration of vacancies along the boundaries. Near the {;111};_bcc twin a split-vacancy consisting of a divacancy and an interstitial is the most stable configuration. This has a very high binding energy and an exceptionally high migration energy. Near the other boundaries the vacancy migration energies are less than in the bulk. The implications of the results are discussed.     

Migration of adatom adsorption on graphene using DFT calculation

DFT calculations of various atomic species on graphene sheet are investigated as prototypes for the formation of nano-structures on graphene. We investigate computationally the adsorption energies and migration energies in adsorption sites on graphene sheet for many atomic species, including transition metals, noble metals, nitrogen and oxygen, from atomic number 1 to 83, using the DFT calculation. The calculations are done for adatoms at three sites having symmetry, H6, B and T on a 3×3 super cell. For adsorption energy and migration energy, we performed a study that covered almost all the periodic table. The calculated results show that adsorption for metal and transition metal elements is mainly on the H6-site, whereas nonmetallic elements showed a tendency to adsorb on the B-site. When we consider a metal-graphene junction, not only the adsorption energy but also the migration energy is important. We estimate the minimum limit of the migration energy of the adatom. We found that 3d transition metals and some nonmetallic elements had very high migration energy. Our calculation will be very helpful for experimental groups that are considering the choice of electrode materials for metal-graphene junctions, and in designing nano devices, nano wires and nano switches.     

Magnetic and binding properties of metal-divacancy complexes at MgO (0 0 1) surface: DFT calculations

We have analyzed the magnetic and binding properties of Ni, Cr, Mo, and Pt metals deposited on the defect free and defect containing surfaces of MgO by means of density functional theory calculations and embedded cluster model. Clusters of moderate sizes with no border anions, to avoid artificial polarization effects, were embedded in the simulated Coulomb fields that closely approximate the Madelung fields of the host surfaces. Spin quenching occurs for Cr and Mo complexes at the defect free (terrace) surface, and Cr, Mo, and Pt complexes at the defect containing “pit” divacancy surface. The binding energies of the metals are significantly enhanced on the cationic vacancy end of the divacancy. The adsorption energies of the low spin states of spin quenched complexes are always greater than those of the high spin states. The metal-support interactions stabilize the low spin states of the adsorbed metals with respect to the isolated metals, but the effect is not always enough to quench the spin. The encountered variations in magnetic properties of free metals and of metal complexes are correlated with the energy gaps of the frontier orbitals. Spin contamination affect the adsorbate-substrate distances, Mulliken charges, Mulliken spin densities, natural charge, natural orbital population, and provide rationalization for the reported magnetic and binding properties. The electrostatic potential energy curves provide clearer understanding of the nature of magnetic and binding interactions. The magnetic and binding properties of a single metal atom adsorbed on a particular surface result from a competition between Hund's rule for the adsorbed metal, and the formation of a chemical bond at the interface.     

Positron trapping in cobalt and trapping threshold temperature correlations

The monovacancy formation energy of Co is measured as 1.91 eV from a trapping model analysis of theT-dependence of the lineshape parameter. Previously discussed linear relationships between trapping threshold temperature and monovacancy parameters are refined; these relationships can now be regarded as well-established.     

Formation and migration properties of the rare gases He,Ne, Ar,Kr, and Xe in nickel

The energies of formation and migration of various rare gas-point defect complexes in an f.c.c. nickel lattice have been calculated for He, Ne, Ar, Kr, and Xe. Formation energies of rare gas atoms at interstitial sites are compared with those in substitutional sites. Binding energies are presented for self-interstitials and vacancies trapped to the various rare gas substitutionals. We also present migration energies and migration paths for various rare gas interstitials and substitutionals with and without trapped vacancies and self-interstitials. The migration energies are compared with the breakup energies for the corresponding complexes. We find that divacancy-rare gas complexes are rather stable and will migrate at relatively low energies compared to other substitutional rare gas migration processes.     

Absorption and diffusion of oxygen in the Ti<Subscript>3</Subscript>Al alloy

The absorption and diffusion of oxygen in the Ti₃Al alloy are studied by the projector augmented wave within the density functional theory. The highest absorption energies are shown to correspond to the sites in the octahedra formed by six titanium atoms, and the presence of aluminum in the nearest neighbors leads to a substantial decrease in the binding energy of oxygen in the alloy by approximately 1.5 eV. The energy barriers of oxygen diffusion between various interstices in the crystal lattice of the alloy are estimated, and the preferred migration paths in the (0001) plane and the [0001] direction are determined. It is found that the migration barrier from the most preferred octahedral O1 site to distorted tetrahedral Ti-site (2.42 eV) is a key barrier and limits the oxygen diffusion in the alloy. The calculated temperature diffusion coefficient of oxygen in the Ti₃Al alloy and the activation energies determined in two directions agree with the experimental data.     

Anisotropic Migration of Defects under Strain Effect in BCC Iron

The basic properties of defects(self-interstitial and vacancy) in BCC iron under uniaxial tensile strain are investigated with atomic simulation methods. The formation and migration energies of them show different dependences on the directions of uniaxial tensile strain in two different computation boxes. In box-1, the uniaxial tensile strain along the100direction influences the formation and migration energies of the110dumbbell but slightly affects the migration energy of a single vacancy. In box-2, the uniaxial tensile strain along the 111 direction influences the formation and migration energies of both vacancy and interstitials. Especially, a 110 dumbbell has a lower migration energy when its migration direction is the same or close to the strain direction, while along these directions, a vacancy has a higher migration energy. All these results indicate that the uniaxial tensile strain can result in the anisotropic formation and migration energies of simple defects in materials.     

六角密堆结构钇的解析型键序作用势

为了构建拟合势需要的数据库,采用密度泛函理论方法计算了六角密堆结构钇(hcp-Y)的晶格参数、弹性常数、内聚能、结构能差以及相关的点、面缺陷性质. 基于解析型键序作用势,构建了hcp-Y的多体作用势模型. hcp-Y势模型是通过拟合Y的晶格参数、弹性常数、体弹模量、内聚能、空位形成能和不同相之间的结构能差而构建.分析发现,所得到的势模型能够很好地描述hcp-Y的自填隙原子形成能、空位形成能、双空位键能以及其它体性质,同时,构建的势模型用来研究Y的热动力学性质的相关结果也比较理想.     

Interaction of scandium and titanium atoms with a carbon surface containing five- and seven-membered rings

The use of carbon nanotubes coated by atoms of transition metals to store molecular hydrogen is associated with the problem of the aggregation of these atoms, which leads to the formation of metal clusters. The quantum-chemical simulation of cluster models of the carbon surface of a graphene type with scandium and titanium atoms has been performed. It has been shown that the presence of five- and seven-membered rings, in addition to six-membered rings, in these structures makes it possible to strongly suppress the processes of the migration of metal atoms over the surface, preventing their clustering.