加压下ZnO结构相变和电子结构的第一性原理计算

基于密度泛函(DFT)理论的第一性原理,计算半导体ZnO纤锌矿结构和岩盐矿结构状态方程及其在高压下的相变,分析加压下体相ZnO的晶格常数、电子态密度和带隙随压力的变化关系,并将计算结果与文献中的理论和实验数据进行比较.验证在计算金属氧化物时,应用局域密度(LDA)近似计算出的相变压力普遍偏高,采用广义梯度(GGA)近似得到的结果与实验符合较好.     

高压下BeP2N4结构相变和电子结构的第一性原理计算

 基于密度泛函理论的第一性原理方法,计算了硅铍石型和尖晶石型结构BeP₂N₄的总能量随体积的变化关系。利用Brich-Murnaghan状态方程,通过能量和体积拟合,得到了2种结构的体变模量及其对压强的一阶导数。在压力作用下,BeP₂N₄的相变是从硅铍石型结构（空间群R-3,No.148）转变到尖晶石型结构（空间群Fd-3m,No.227）,计算出的相变点与其它理论值符合得非常好。同时计算了BeP₂N₄的相对晶格常数a/a₀和相对体积V/V₀的压缩率,在低压下发现,尖晶石结构BeP₂N₄的压缩率接近金刚石,进一步计算了不同压力下的体弹模量B_H、剪切模量G_H、B_H/G_H和杨氏模量E。此外,对两种结构的BeP₂N₄的电子态密度和带隙随压强的变化关系进行了计算和分析。结果表明：在压力作用下,上价带顶向费米能级移动,并有一定的展宽。Be—N、P—N键缩短,电子转移增加,导致电荷发生重新分布。     

非晶碳结构建模和电子结构的第一性原理研究

基于密度泛函理论，采用了一种更为精确的交换相关泛函OLYP(OPTX+LYP)，对密度范围从2.0到3.2 g/cm³的非晶碳进行结构建模. 模拟得到的5个碳网络结构无论从径向分布函数还是sp³含量都与实验符合得很好. 对非晶碳电子结构的研究表明费米能级附近的电子态密度主要是sp²碳原子的贡献. 随着密度的增加，sp³碳原子增加，费米能级附近的态密度越来越小. 小环结构增加了费米能级附近的电子态密度，缺陷态在费米能级形     

Zn,Cd掺杂AlN电子结构的第一性原理计算

基于密度泛函理论(DFT)框架下的第一性原理的平面波超软赝势方法(USPP),对Zn,Cd掺杂AlN的32原子超原胞体系进行了几何结构优化,从理论上给出了掺杂和非掺杂体系的晶体结构参数。计算了掺杂AlN晶体的结合能、电子态密度、差分电荷密度,并对计算结果进行了细致的分析。计算结果表明,Cd、Zn都可以提供很多的空穴态,是良好的p型掺杂剂,但是相对于Cd, Zn原子在AlN晶体中的溶解度更大,并且可以提供更多的空穴,有利于形成更好的p型电导。     

非晶碳结构建模和电子结构的第一性原理研究

基于密度泛函理论,采用了一种更为精确的交换相关泛函OLYP(OPTX+LYP),对密度范围从2.0到3.2 g/cm³的非晶碳进行结构建模. 模拟得到的5个碳网络结构无论从径向分布函数还是sp³含量都与实验符合得很好. 对非晶碳电子结构的研究表明费米能级附近的电子态密度主要是sp²碳原子的贡献. 随着密度的增加,sp³碳原子增加,费米能级附近的态密度越来越小. 小环结构增加了费米能级附近的电子态密度,缺陷态在费米能级形 关键词： 非晶碳 密度泛函理论 电子结构     

固相硝基甲烷相变的第一性原理计算

研究极端条件下固相分子晶体含能材料的相变机理,对于人们认识固相含能材料的爆轰反应有着重要的意义.采用基于校正密度泛函理论的第一性原理方法研究固相硝基甲烷在静水压下的行为.分析晶格参数a,b和c轴随压强的变化,发现在1 GPa到12 GPa时晶格参数出现不连续的变化,表明体系发生相变.在相变时最大的二面角从155.3?增加到177.5?,二面角的增加限制CH3官能团自由旋转,使得C-N和C-H键的键长发生变化.在相变之前,体系主要存在由C-H···O组成的分子间的氢键,而在相变之后存在分子内的H···O和分子间C-H···O组成的氢键.此外通过对硝基甲烷体系的电子结构进行计算,发现相变会影响带隙随压强的变化,而且还会影响费米能级附近的态密度结构.     

掺Cd氧化锌的电子结构及相结构稳定性的第一性原理研究

采用基于密度泛函理论结合投影缀加平面波方法的VASP软件包,在考虑所有掺杂原子构型的前提下,对Cd掺杂ZnO合金的晶格常数、禁带宽度、电子态密度和形成焓进行了计算,分析了Cd含量和掺杂原子构型对纤锌矿wz-Zn_1-xCd_xO合金的电子结构和结构稳定性的影响.计算结果表明:随着Cd含量的不断增加,纤锌矿ZnCdO合金的平均晶格常数a,c均线性增加,但c/a的比值不会发生显著的变化;纤锌矿ZnCd 关键词： 密度泛函理论 ZnCdO合金 电子结构 形成焓     

In掺杂ZnO电子结构的第一性原理研究

采用第一性原理平面波超软赝势,计算了纤锌矿ZnO和不同掺杂量下In掺杂ZnO晶体的能带结构、态密度和分波态密度.计算表明,In的掺杂导致ZnO禁带宽度变窄.随着掺杂量的增大,In_xZn_1－xO的导带底和价带顶同时下降,但是导带底比价带顶下降得多,这导致了带隙的变窄.此外,In掺杂使晶胞晶格常数增大,这对带隙的变窄也有一定作用.     

接枝羧基的有限长碳纳米管电子结构的第一性原理研究

基于局域密度泛函理论，采用第一性原理方法，建立了对(5,5)型和(9,0)型有限长碳纳米管接枝羧基官能团的原子模型，通过计算其电子分布和态密度的变化，讨论羧基官能团对碳纳米管电子结构和电子输运特性的影响. 计算表明，接枝羧基的碳纳米管,其电子结构明显改变，其费米能级上的电子态密度下降；最高占据轨道上的非定域程度减弱,致使电子输运性能呈下降趋势. 关键词： 碳纳米管 密度泛函理论 电子结构     

Al和N共掺p型Zn1-xMgxO电子结构的第一性原理计算

采用密度泛函理论下的第一性原理平面波超软赝势方法,对Zn1-xMgxO超晶胞和掺杂Al,N后的Zn1-xMgxO超晶胞分别进行了优化计算.结合广义梯度近似计算了Al和N共掺杂后Zn1-xMgxO的能带结构、电子态密度和Mulliken电荷布居分布.计算表明:掺入N原子的2p态电子为Zn1-xMgxO价带顶提供空穴载流子,使Zn1-xMgxO价带顶向高能方向移动;掺入Al原子的3p态电子则与N原子的2p态电子在费米能级附近发生轨道杂化,使费米能级处价带能级展宽,Al和N共掺杂可获得p型Zn1-xMgxO.     

ZnSe弹性常数和相变的从头计算

利用平面波密度泛函理论研究了ZnSe从闪锌矿结构到盐石结构的相变.结果发现通过H相等得到的相变压力为16.8 GPa,与通过高压弹性常数值判断所得到的结果相符.     

(ZnSe)n(n=1,2)团簇结构及ZnSe分子热力学性质的理论计算

用密度泛函B3LYP方法、6-311 G基组对(ZnSe)n(n=1,2)分子体系进行了理论研究,得到(ZnSe)n(n=1,2)分子体系的基态电子状态的平衡几何Re、谐振频率、偶极矩和离解能De及不同温度、压力下的热力学函数值;设用总能量中的电子和振动能量近似代表ZnSe分子处于固态时的能量,用总熵中的电子和振动熵近似代表ZnSe分子处于固态时的熵,进而计算了Zn与Se反应的ΔH0、ΔS0、ΔG0,并由此计算出不同温度的反应平衡常数Kp.结果表明:在298~1150 K温度范围内,Zn与Se反应的自由能值均为负,且随着温度的升高,ΔG0值负的越多,表明在这个温度范围内反应能自发发生,而且自发趋势随温度的升高逐渐增大;平衡常数逐渐减小,即反应进行程度随温度的升高逐渐减小;ZnSe分子材料的导电性随压力增大而增强.     

Pressure-induced phase transition in wurtzite ZnS: An ab initio constant pressure study

We study the pressure-induced phase transition of wurtzite ZnS using a constant pressure ab initio technique. A first-order phase transition into a rocksalt state at 30–35 GPa is observed in the constant pressure simulation. We also investigate the stability of wurtzite (WZ) and zinc-blende (ZB) phases from energy–volume calculations and Gibbs free energies at zero temperature and find that both structures show nearly similar equations of state and transform into a rocksalt structure around 14 GPa, in agreement with experiments. Additionally, we examine the influence of pressure on the electronic structure of the wurtzite and zinc-blende ZnS crystals and find that their band gap energies exhibit similar tendency and increase with increasing pressure. The calculated pressure coefficients and deformation potential are found to be comparable with experiments.     

Electronic and optical properties of Si and Ge nanocrystals: An ab initio study

First-principles calculations within density functional theory and many-body perturbation theory have been carried out in order to investigate the structural, electronic and optical properties of undoped and doped silicon nanostructures. We consider Si nanoclusters co-doped with B and P. We find that the electronic band gap is reduced with respect to that of the undoped crystals, suggesting the possibility of impurity based engineering of electronic and optical properties of Si nanocrystals. Finally, motivated by recent suggestions concerning the chance of exploiting Ge dots for photovoltaic nanodevices, we present calculations of the electronic and optical properties of a Ge₃₅H₃₆ nanocrystal, and compare the results with those for the corresponding Si₃₅H₃₆ nanocrystals and the co-doped Si₃₃BPH₃₆.     

Fcc-to-bct phase transformation of aluminum under triaxial stresses: an ab initio constant pressure study

We have carried out constant pressure ab initio simulations within a generalized gradient approximation to investigate the response of aluminum to triaxial stresses and found that aluminum undergoes a phase transformation from the face-centered cubic structure (fcc) to a body centered tetragonal (bct) structure having the space group of I4/mmm. The critical stress for the fcc-to-bct transformation increases as the ratio of the triaxial stress increases but such a phase transition never occurs under hydrostatic compression. The bct phase is elastically unstable.     

Electronic structural and bulk properties of ScSe: ab initio study

Electronic, structural and bulk properties of scandium selenide, ScSe have been reported in the present paper. These properties have been studied using first principle calculations as well as the interionic potential model modified with covalency effect. The Gibbs free energy and enthalpy calculations show that present compound undergoes a structural phase transition from the NaCl-type structure to the CsCl-type structure. The stability of the present compound is discussed in terms of electronic band structure and density of states. The calculated equilibrium structural parameters are in a good agreement with the available experimental results.     

Defect stability in thorium monocarbide:An ab initio study

The elastic properties and point defects of thorium monocarbide(ThC) have been studied by means of density functional theory based on the projector-augmented-wave method. The calculated electronic and elastic properties of ThC are in good agreement with experimental data and previous theoretical results. Five types of point defects have been considered in our study, including the vacancy defect, interstitial defect, antisite defect, schottky defect, and composition-conserving defect. Among these defects, the carbon vacancy defect has the lowest formation energy of 0.29 eV. The second most stable defect(0.49 eV) is one of composition-conserving defects in which one carbon is removed to another carbon site forming a C2 dimer. In addition, we also discuss several kinds of carbon interstitial defects, and predict that the carbon trimer configuration may be a transition state for a carbon dimer diffusion in Th C.     

Electronic structure of silicon nitride according to ab initio quantum-chemical calculations and experimental data

Charge transfer ΔQ = 0.35e at the Si-N bond in silicon nitride is determined experimentally using photoelectron spectroscopy, and the ionic formula of silicon nitride Si₃^+1.4N₄^−1.05 is derived. The electronic structure of α-Si₃N₄ is studied ab initio using the density functional method. The results of calculations (partial density of states) are compared with experimental data on X-ray emission spectroscopy of amorphous Si₃N₄. The electronic structure of the valence band of amorphous Si₃N₄ is studied using synchrotron radiation at different excitation energies. The electron and hole effective masses m _e ^* ≈ m _h ^* ≈ 0.5m _e are estimated theoretically. The calculated values correspond to experimental results on injection of electrons and holes into silicon nitride.