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1.
The QCD sum rules for the proton. mass,the n-p mass ratio and the optimal observation point are analysed, which can greatly improve the precision of the theoretical results. If we take =
and mu/(mu+md)-=0.35 which agree with the values from SVZ and current algebra[1,2],we obtain Mp=935.86MeV and Mp/Mn=0.99871 which coincide quite well with experimental values.The isospin behavior of light quarks is investigated. It shows that the isospin symmetry of the light quark condensates is very good up to the low-energy region (about 500MeV),and that the n-p mass difference can be originated from the u-and d-quark mass differences.  相似文献   

2.
We study the mass of Weyl'a vector meson (WVM) Me in the model proposed by Hung Cheng. We find from cosmological constraints that Me should be. either extremely light as no greater than 400 eV, or extremely heavy ae much greater than Mp, corresponding to the Weyl's gauge coupling constant f to be f < l0-26 and f >> 1, respectively. We regard our results reasonable based on Dirac's large number theorem.  相似文献   

3.
The mechanical anisotropy, structural properties, electronic band structures and thermal properties of C2 N2 (CH2 ), Si2 N2 (SiH2 ) and Ge2 N2 (GeH2 ) are detailed and investigated in this work. The novel silicon nitride phase Si2 N2 (SiH2 ) and germanium nitride phase Ge2 N2 (GeH2 ) in the Cmc 21 structure are proposed in this work. The novel proposed Si2 N2 (SiH2 ) and Ge2 N2 (GeH2 ) are both mechanically and dynamically stable. The electronic band calculation of the HSE06 hybrid functional shows that C2 N2 (CH2 ), Si2 N2 (SiH2 ) and Ge2 N2 (GeH2 ) are all wide band gap semiconductor materials, and C2 N2 (CH2 ) and Si2 N2 (SiH2 ) are direct band gap semiconductor materials, while Ge2 N2 (GeH2 ) is a quasi-direct band gap semiconductor material, the band gap of C2 N2 (CH2 ), Si2 N2 (SiH2 ) and Ge2 N2 (GeH2 ) are 5.634 eV, 3.013 eV, and 2.377 eV, respectively. The three-dimensional and plane distributions of Young’s modulus, shear modulus and Poisson’s ratio of C2 N2 (CH2 ), Si2 N2 (SiH2 ) and Ge2 N2 (GeH2 ) show that these materials have different degrees of mechanical anisotropy. The order of Young’s modulus of Si2 N2 (SiH2 ) and Ge2 N2 (GeH2 ) in different directions is different from that of C2 N2 (CH2 ). When the tensile axis is in a particular direction, the order of the Young’s modulus of Si2 N2 (SiH2 ): E [110] <E [120] <E [111] <E [101] <E [010] =E [100] <E [011] <E [001], and the order of the Young’s modulus of Ge2 N2 (GeH2 ): E [110] <E [111] <E [101] <E [120] <E [100] <E [010] <E [011] <E [001] .  相似文献   

4.
于晶杰  肖志国  宁桂玲 《发光学报》2013,34(12):1561-1566
采用高温固相法合成了荧光体Ba10(PO44(SiO42:Ce3+和Ba10(PO44(SiO42:Eu2+,研究了两种荧光体的光谱特性。结果表明,两者都呈现较强的宽带激发特征。根据同种基质中Eu2+和Ce3+两种离子光谱特征的相关性,通过测得的Ba10(PO42(SiO42基质中Ce3+的光谱数据估算了Ba10(PO42(SiO42:Eu2+中Eu2+的斯托克斯位移(ΔS)和激发能量,估算结果与Ba10(PO42(SiO42:Eu2+样品的光谱分析结果十分吻合。Ba10(PO42(SiO42:Eu2+可以同时被紫光和蓝光激发,发出偏白的绿光,可用作白光LED的荧光粉。  相似文献   

5.
We study an SU(3)L×U(1)X electroweak model. By requiring M2Z1-M2W/cos2θW to be less than experimental value we obtain a lower bound on Z' boson mass, MZ' >600 GeV. The relation between MZ' and MU (MV) then gives a lower bound on MU (MV):MU (MV)>490 GeV. From the constraint sin2 θW(MZ')<0.3, the upper bounds on MZ' and MU (MV) are computed to be MZ'<5.8×104 TeV and MU (MV)<4.6×104 TeV. We estimate further the KL-KS mass difference due to Z' exchange and try to use the result to obtain stronger lower bounds. On cosmological grounds we find that MN<390 eV for Tf=2.3 GeV and MN<740 eV for Tf=300 GeV.  相似文献   

6.
计算钛空位(VTi)和氧空位(VO)共存情况下未掺杂金红石TiO2的铁磁性.发现VO可以产生局域磁矩,由它引起的自旋极化比VTi引起的更加局域,导致VO之间的铁磁耦合作用弱于VTi之间的铁磁耦合作用.VTi之间的铁磁耦合在引入VO之后进一步加强.VO引入的电子调制两个分离的VTi之间的长程铁磁耦合.加入VTi之后,两个VO的磁矩猝灭,当VO的数量多于VTi的数量二倍时,VO会对磁矩有贡献.结果与实验发现的VO可以提高铁磁有序,并且总的磁矩会随着VO数量的增多而增加的结果符合很好.  相似文献   

7.
The Stokes parameters (Sp, S1, S2, S3) of light are measured at an arbitrary wavelength over a wide wavelength range. The Stokes parameters S1 and S2 are easily obtained. But the Stokes parameter S3 at the arbitrary wavelength is affected by the phase difference error Δ1 of the quarter-wave plate mismatch and the Stokes parameters S1 or S2. Therefore, in this paper, S3 is obtained from both the intensity measurements by the circular polarizer rotating the quarter-wave plate by 0° and 90°. Then, S3 is obtained by considering only Δ1, but is not affected by S1 and S2. Also, though Δ1 is not accounted for, S3 is measured more accurately.  相似文献   

8.
许煜寰  陈焕矗 《物理学报》1985,34(7):978-982
本文介绍铁电单晶(KxNa1-x)0.4(SryBa1-y)0.8Nb2O6的光学性质和线性电光效应的测量。实验结果表明,这种晶体具有较大的光学双折射,透光范围由4000?到5.6μm。晶体具有低的线性电光调制的半波电压,其电光调制价值指数n03·γc高达730×10 关键词:  相似文献   

9.
陈海峰 《物理学报》2013,62(18):188503-188503
研究了反向衬底偏压VB下纳米N沟道金属氧化物半导体场效应晶体管中栅调制界面产生(GMG)电流IGMG特性, 发现IGMG曲线的上升沿与下降沿随着|VB|的增大向右漂移. 基于实验和理论模型分析, 得出了VB与这种漂移之间的物理作用机制, 漂移现象的产生归因于衬底偏压VB 调节了表面电势φs在栅电压VG 中的占有比重: |VB|增大时相同VGφs会变小, φs 的变化继而引发上升沿产生率因子gr减小以及下降沿产生率因子gf增大. 进一步发现IGMG 上升沿与下降沿的最大跨导GMR, GMF 在对数坐标系下与VB成线性关系, 并且随着|VB|增加而增大. 由于漏电压VDIGMG 上升沿与下降沿中的作用不同, 三种VDGMR-VB曲线重合而GMF-VB曲线则产生差异. 增大VD 会增强gfVG的变化, 因此使得给定VB 下的GMF变大. 同时这却导致了更大VDGMF-VB 曲线变化的趋势减缓, 随着VD从0.2 V变为0.6 V, 曲线的斜率s从0.09减小到0.03. 关键词: 产生电流 表面势 衬底偏压 N沟道金属氧化物半导体场效应晶体管  相似文献   

10.
张静  陈铮  王永欣  卢艳丽 《中国物理 B》2016,25(11):116102-116102
Anti-structured defects bridge atom migration among heterogeneous sublattices facilitating diffusion but could also result in the collapse of ordered structure.Component distribution Ni_(75)Al_xV_(25-x) alloys are investigated using a microscopic phase field model to illuminate relations between anti-structured defects and composition,precipitate order,precipitate type,and phase stability.The Ni_(75)Al_xV_(25-x) alloys undergo single Ni_3V(stage Ⅰ),dual Ni_3Al and Ni_3V(stage Ⅱ with Ni_3V prior;and stage Ⅲ with Ni_3Al prior),and single Ni_3Al(stage Ⅳ) with enhanced aluminum level.For Ni_3V phase,anti-structured defects(V_(Ni1),Niy,except V_(Ni2)) and substitution defects(Al_(Ni1),Al_(Ni2),Al_v) exhibit a positive correlation to aluminum in stage I,the positive trend becomes to negative correlation or smooth during stage Ⅱ.For Ni_3 Al phase,anti-structured defects(Al_(Ni),Ni_(Al)) and substitution defects(V_(Ni),V_(Al)) have a positive correlation to aluminum in stage Ⅱ,but Ni_(Al) goes down since stage Ⅲ and lasts to stage Ⅳ.V_(Ni) and V_(Al) fluctuate when Ni_3Al precipitates prior,but go down drastically in stageⅣ.Precipitate type conversion of single Ni_3V/dual(Ni_3V+Ni_3Al) affects Ni_3V defects,while dual(Ni_3V+Ni_3Al)/single Ni_3 Al has little effect on Ni_3Al defects.Precipitate order swap occurred in the dual phase region affects on Ni_3Al defects but not on Ni_3V.  相似文献   

11.
张研  段理  Vincent Ji  徐可为 《中国物理 B》2016,25(5):58102-058102
The structural, electronic, and magnetic properties of double perovskite Sr_2FeReO_6 containing eight different imperfections of FeReor ReFeantisites, Fe1–Re1 or Fe1–Re4 interchanges, V_(Fe), V_(Re), VOor V_(Sr) vacancies have been studied by using the first-principles projector augmented wave(PAW) within generalized gradient approximation as well as taking into account the on-site Coulomb repulsive interaction(GGA+U). No obvious structural changes are observed for the imperfect Sr_2FeReO_6 containing FeReor ReFeantisites, Fe1–Re1 or Fe1–Re4 interchanges, or VSrvacancy defects. However, the six(eight) nearest oxygen neighbors of the vacancy move away from(close to) VFeor V_(Re)(VO) vacancies. The half-metallic(HM) character is maintained for the imperfect Sr_2FeReO_6 containing FeReor ReFeantisites, Fe1–Re4 interchange, V_(Fe),VO or V_(Sr) vacancies, while it vanishes when the Fe1–Re1 interchange or VRevacancy is presented. So the Fe1–Re1 interchange and the VRevacancy defects should be avoided to preserve the HM character of Sr_2FeReO_6 and thus usage in spintronic devices. In the FeReor ReFeantisites, Fe1–Re1 or Fe1–Re4 interchanges cases, the spin moments of the Fe(Re)cations situated on Re(Fe) antisites are in an antiferromagnetic coupling with those of the Fe(Re) cations on the regular sites. In the V_(Fe), V_(Re), VO, or V_(Sr) vacancies cases, a ferromagnetic coupling is obtained within each cation sublattice,while the two cation sublattices are coupled antiferromagnetically. The total magnetic moments μtot(μB/f.u.) of the imperfect Sr_2FeReO_6 containing eight different defects decrease in the sequence of VSrvacancy(3.50), VRevacancy(3.43),FeReantisite(2.74), VOvacancy(2.64), VFevacancy(2.51), ReFeantisite(2.29), Fe1–Re4 interchange(1.96), Fe1–Re1interchange(1.87), and the mechanisms of the saturation magnetization reduction have been analyzed.  相似文献   

12.
s-f交换作用和电子交换作用对s电子比热容的影响   总被引:1,自引:0,他引:1       下载免费PDF全文
关立强  王翠  李贞姬  金光星 《物理学报》1997,46(8):1598-1604
根据s-d交换作用模型,考虑了s-f交换效应对稀土金属电子-声子耦合的影响,具体讨论了s电子的比热容.计算结果表明,s电子的比热容可以写为如下的形式:γ=γ0+γep+γex+γs-f. 关键词:  相似文献   

13.
以8-羟基喹啉为配体的金属配合物是一种性能优良的有机电致发光材料,其中有关8-羟基喹啉铝(Alq3)研究已有大量报道,8-羟基喹啉锌(Znq2)研究还有待发展。介绍了两种以Znq2为基体的新型有机电致发光材料Znq2(H2O)2和(Znq2)4的合成方法。用IR、XRD、TG、DTA和荧光测试方法进行表征与分析表明:Znq2(H2O)2和(Znq2)4的玻璃化温度(Tg)分别为104.2℃和204.9℃;在161℃下Znq2(H2O)2脱去水分子成为Znq2,在361℃高温下四聚体(Znq2)4裂解为单体Znq2;Znq2(H2O)2和(Znq2)4具有很好的发光性能,在光致发光谱中λmax分别是505,550nm。  相似文献   

14.
While YSr2Cu3O7 cannot be prepared under ambient conditions, partial substitution of the phosphate group for copper, as in YSr2Cu2.8(PO4)0.2Oy, stabilizes this phase in the orthorhombic structure, but the material is not superconducting. Superconductivity in YSr2Cu2.8(PO4)0.2Oy is obtained by increasing the hole concentration through partial substitution of Y by Ca, as in Y0.7Ca0.3Sr2Cu2.8(PO4)0.2Oy (Tc≈40 K). By incorporating the phosphate group in orthorhombic YBaSrCu3O 7, a stable tetragonal derivative of the formula YBaSrCu2.8(PO4)0.2Oy (Tc≈ 47 K) has been prepared; the Tc increases to 70 K by partial substitution of Y by Ca as in Y0.7Ca0.3BaSrCu2.8(PO4)0.2Oy.  相似文献   

15.
Absorption, emission and excitation spectra of CaF2, SrF2, BaF2 crystals doped by Y bF3 or EuF3 impurities were studied in 1–12 eV spectral region. The intensive absorption broad bands (denoted as CT1) were observed in all cases just below the 4f–5d absorption region. Less intensive absorption bands, denoted as CT2, having energies 1.2–1.5 eV lower than those of CT1, were observed in CaF2, SrF2 crystals doped by EuF3 or Y bF3 impurities.

High resolution emission spectra of Eu-doped CaF2 and SrF2 crystals excited into CT1 and CT2 bands were measured. Under excitation into CT1 bands, all present Eu sites (C4v, Oh and some aggregates) were observed in emission spectra. While under excitation into CT2 bands, only the emission of C4v sites was observed.  相似文献   


16.
Materials from the Mn(0.5−x)CaxTi2(PO4)3 (0≤x≤0.50) solid solution were obtained by solid-state reaction in air at 1000 °C. Selected compositions were investigated by powder X-ray diffraction analysis, 31P nuclear magnetic resonance (NMR) spectroscopy and electrochemical lithium intercalation. The structure of all samples determined by Rietveld analysis is of the Nasicon type with the R space group. Mn2+/Ca2+ ions occupy only the M1 sites in the Ti2(PO4)3 framework. The divalent cations are ordered in one of two M1 sites, except for the Mn0.50Ti2(PO4)3 phase, where a small departure from the ideal order is observed by XRD and 31P MAS NMR. The electrochemical behaviour of Mn0.50Ti2(PO4)3 and Mn(0.5−x)CaxTi2(PO4)3 phases was characterised in Li cells. Two Li ions can be inserted without altering the Ti2(PO4)3 framework. In the 0≤y≤2 range, the OCV curves of Li//LiyMn0.50Ti2(PO4)3 cells show two main potential plateaus at 2.90 and 2.50–2.30 V. Comparison between the OCV curves of Li//Li(1+y)Ti2(PO4)3 and Li//LiyMn0.50Ti2(PO4)3 shows that the intercalation occurs first in the unoccupied M1 site of Mn0.50Ti2(PO4)3 at 2.90 V and then, for compositions y>0.50, at the M2 site (2.50–2.30 V voltage range). The effect of calcium substitution in Mn0.50Ti2(PO4)3 on the lithium intercalation is also discussed from a structural and kinetic viewpoint. In all systems, the lithium intercalation is associated with a redistribution of the divalent cation over all M1 sites. In the case of Mn0.50Ti2(PO4)3, the stability of Mn2+ either in an octahedral or tetrahedral environment facilitates cationic migration.  相似文献   

17.
四氢β-咔啉类化合物的1H NMR及立体化学研究   总被引:2,自引:1,他引:1  
本文提供了三类(六个)代表性四氢β-咔啉化合物的2D-NMR的同核二维相关谱(cosy)和同核NOE谱(NOESY)。根据实验测得的分子中有关基团间显示的NOE关系,指定了所有化合物的构型。借助分子模型,讨论了它们的构象。  相似文献   

18.
The total quantum statistical entropy of Reissner-Nordstrom black holes in Dirac field case is evaluated in this article. The space-time of the black holes is divided into three regions: region 1 (r>ro), region 2 ( ro > r > ri), and region 3 (ri >r>0), where ro is the radius of the outer event horizon, and ri is the radius of the inner event horizon. The total quantum statistical entropy of Reissner-Nordstrom black holes is S=S1+S2+S3, where Si (i=1,2,3) is the entropy, contributed by regions 1,2,3. The detailed calculation shows that S2 is neglectfully small. S1=wt2/45)kb(Ao2β3), S3=-wt2/45)kb(Ai2β3), where Ao and Ai are, respectively, the areas of the outer and inner event horizons, wt=2s[1- 2-(s+1)], s=d/2, d is the space-time dimension, here d=4, s=2. As ri approaches ro in the extreme case the total quantum statistical entropy of Reissner-Nordstrom black holes approaches zero.  相似文献   

19.
采用柠檬酸钠为表面活性剂的水热法制备了NaGd(MoO4)2xEu3+(x=10%, 20%, 30%, 40%)和NaGd(MoO4)2∶7%Eu3+, ySO2-4/BO3-3荧光粉,对所制备样品的晶相、形貌、发光性质进行了表征。XRD分析表明NaGd(MoO4)2xEu3+和NaGd(MoO4)2∶7%Eu3+, ySO2-4/BO3-3荧光粉均为四方相的白钨矿结构;红外光谱测试发现有SO2-4/BO3-3的特征吸收峰,这表明SO2-4/BO3-3被成功掺入基质;荧光光谱测试说明,在NaGd(MoO4)2基质中Eu3+掺杂量为30%时发光最强;通过研究NaGd(MoO4)2∶7%Eu3+, ySO2-4/BO3-3荧光粉的发射光谱,发现适量的SO2-4/BO3-3掺杂会使Eu3+的特征发射增强,且掺杂10%SO2-4或10%BO3-3后可以减少3%左右的Eu3+掺杂,起到了节约稀土掺杂量的作用。  相似文献   

20.
A systematic study of the magnetic hysteresis in transport properties of polycrystalline YBa2Cu3O7−δ–Ag compounds has been made based on two kinds of measurements at 77 K and under applied magnetic fields up to 30 mT: critical current density Jc(Ba) and magnetoresistance R(Ba). The R(Ba) curves show a minimum in their decreasing branch occurring at B=Bmin which was found to be both the excitation current Iex and the maximum applied magnetic field Bam dependent. In addition, for a certain value of Bam>5 mT, we have observed that Bmin increases with increasing Iex and reaches a saturation value. The Jc(Ba) curves show a maximum in decreasing applied magnetic fields occurring at B=Bmax. We have also found that Bmax increases with increasing Bam and reaches a saturation value. The minimum in the R(Ba) and the maximum in Jc(Ba) curves were found to be related to the trapped flux within the grains. All the experimental results are discussed within the context of the flux dynamics and transport mechanisms in these high-Tc materials.  相似文献   

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