Fractional Parentage Coefficients with Explicit Seniority and lsospin

A recurrent formula of SP(N) ⊃ O(3) coupling coefficients for identical fermions with single angular momentum j and isospin 1/2 is given. Using the edicit U(N) ⊃ SP(N) coupling coefficients obtained previously and the recurrent formula here, the algorithm of CFPs can be improved.     

ab initio Study of Electronic Structure and Magnetic Properties of a Novel Two-Dimensional Copper(II)-Radical Complex [Cu(NTTmPy)2(N3)2]n

The full-potential linearized augmented plane wave (FPLAPW) method with the generalized gradient approximations (GGA) is applied to study the compound [Cu(NTTmPy)₂(N₃)₂]_n (NITmPy=2-(3'-Pyridy1)-4, 4, 5, 5-tetramethylimidazolin-1-oxy1-3-oxide). The total density of states (DOS) and the partial density of states (pDOS) are calculated to explain the electronic and the magnetic properties of [Cu(NTTmPy)₂(N₃)₂]_n. It is found that [Cu(NTTmPy)₂(N₃)₂]_n is stable in the ferromagnetic state and the magnetic moment of the molecule mainly comes from the Cu atoms (0.518 μ_B) with partial contribution from N, O atoms of nitronyl nitroxide radicals. There exist orbital hybridization between 3d orbital of Cu and p orbitals of N(1) (from pyridyl rings of the NITmPy ligands) and N(4) (from azido group) and the weak direct exchange interactions between Cu and O atoms of nitronyl nitroxides. In addition, the bridging carbon atom (C(6)) carries a significant negative spin density (-0.019μ_B). The sign alternation of the magnetic moment along the pyridyl ring is obtained, which agrees with experiments.     

大气压空气纳秒脉冲阵列式线-线SDBD等离子体的电学及发射光谱特性研究

提出了一种阵列式线-线沿面介质阻挡放电结构,利用双极性高压纳秒脉冲电源,在大气压空气中激励产生了相对大面积的放电等离子体。其中,高压电极、地电极均为圆柱形金属,放电反应器由20组相间排列的阵列式线型高压电极和套有介质管的阵列式线型地电极组成。利用电压探头、电流探头、示波器等测量了放电电压和放电总电流,并计算得出了放电的实际电流。利用光纤、光栅光谱仪、CCD等测量了波长范围在300～440 nm和766～778 nm的发射光谱,即氮分子第二正带N₂ (C3Π_u→B3Π_g)包括Δν= +1, 0, -1, -2, -3、氮分子离子第一负带N+₂(B2Σ+_u→X2Σ+_g),N₂ (B3Π_g→A3Σ+_u)和O (3p5P→3s5S₂)的发射光谱。比较了氮分子第二正带N₂ (C3Π_u→B3Π_g)的各个振动峰和各个活性物种的发射光谱强度,以及这些发射光谱强度随着脉冲峰值电压的变化。测量了N₂(C3Π_u→B3Π_g, 0-0)的二次、三次衍射光谱,与原始光谱在转动带、背景光谱等方面进行了比较,并计算了二次衍射和原始光谱之间的峰值比。利用氮分子第二正带N₂ (C3Π_u→B3Π_g, Δν=+1, 0, -1, -2)和氮分子离子第一负带N+₂ (B2Σ+_u→X2Σ+_g, 0-0)模拟了等离子体的转动温度和振动温度,对模拟结果进行了比较,并研究了脉冲峰值电压对等离子体振动温度和转动温度的影响。通过测量放电的电压和计算得到的放电电流发现,当脉冲峰值电压为22 kV,脉冲重复频率为150 Hz时,阵列式线-线沿面介质阻挡放电的放电电流在正脉冲、负脉冲两个方向上均可达75 A左右。通过诊断放电等离子体的发射光谱发现,在测量的波长范围内,放电产生的活性物种主要有氮分子第二正带N₂ (C3Π_u→B3Π_g)、氮分子离子第一负带N+₂(B2Σ+_u→X2Σ+_g),N₂ (B3Π_g→A3Σ+_u)和O (3p5P→3s5S₂)。在脉冲峰值电压22～36 kV的变化范围内,氮分子第二正带N₂(C3Π_u→B3Π_g, 0-0)的发射光谱强度始终保持最强,N₂ (B3Π_g→A3Σ+_u)次之,而氮分子离子第一负带N+₂(B2Σ+_u→X2Σ+_g)和O (3p5P→3s5S₂)的发射光谱强度较弱。同时,当脉冲峰值电压升高时,氮分子第二正带N₂ (C3Π_u→B3Π_g)的所有振动峰,以及氮分子离子第一负带N+₂(B2Σ+_u→X2Σ+_g),N₂ (B3Π_g→A3Σ+_u)和O (3p5P→3s5S₂)的发射光谱强度均随之升高。通过比较氮分子第二正带N₂(C3Π_u→B3Π_g, 0-0)的原始、二次衍射、三次衍射光谱发现,二次、三次衍射光谱的转动带更清晰,但三次衍射光谱的背景更强,因此氮分子第二正带N₂(C3Π_u→B3Π_g)的二次衍射光谱更有利于模拟等离子体的转动温度。通过比较模拟得到的振动温度和转动温度发现,氮分子第二正带N₂ (C3Π_u→B3Π_g, Δν=-2)在N₂ (C3Π_u→B3Π_g)四个谱带Δν=+1, 0, -1, -2中最适于模拟等离子体振动温度,而利用氮分子离子第一负带N+₂ (B2Σ+_u→X2Σ+_g,0-0)模拟得到的等离子体转动温度要比N₂ (C3Π_u→B3Π_g, Δν=-2)的模拟结果高约10～15 K。同时,当脉冲峰值电压升高时,由N₂ (C3Π_u→B3Π_g, Δν=-2)和N+₂ (B2Σ+_u→X2Σ+_g, 0-0)模拟得到等离子体的转动温度均出现了略微上升的趋势,而利用N₂ (C3Π_u→B3Π_g, Δν=-2)模拟得出的振动温度则略微下降。     

The Branching Rules for U(7)⊃0(7)⊃G2⊃0(3)

The branching rules for U(7)⊃0(7)⊃G₂ and G₂⊃0(3) for at most fourcolumned IRs of U(7)) and O(7) are given respectively by using the method of decomposition of Kronecker products of IRs of groups. The needed formulae for decomposition of Kronecker products of IRs of O(7) and G₂ are given also.     

Active species in microwave postdischarge for steel-surfacenitriding

Production of nitrogen atoms has been studied in a 2.45-GHz flowing postdischarge in N₂ and N₂-H₂ gas mixtures with Ar as a buffer gas in the high-pressure regime (5×10³ to 6.5×10⁴ Pa). N atom densities have been measured by NO titration in the 10¹⁴-10 ¹⁵ cm³ range and monitored by the first positive emission resulting from the N atom recombination. The rate coefficient of the N+N+N₂ recombination has been found to be _k=6×10^-33 cm⁶ atom^-2 s ^-1 at T₀=300 K, which agrees with previously published data. The N atom production (or degree of N/N₂ dissociation) in front of an Fe-0.1%C substrate correlates well with the thickness of a γ' Fe₄N layer produced by the postdischarge treatment. The H₂ gas was first introduced in the initial phase of treatment to remove surface oxidizing and then was cut off to keep high densities of N atoms. It is deduced that N atoms are more active nitriding species than NH-type radicals     

Mechanical anisotropy and electronic properties of X2N2 (XH2 ): first-principles calculations*

The mechanical anisotropy, structural properties, electronic band structures and thermal properties of C₂ N₂ (CH₂ ), Si₂ N₂ (SiH₂ ) and Ge₂ N₂ (GeH₂ ) are detailed and investigated in this work. The novel silicon nitride phase Si₂ N₂ (SiH₂ ) and germanium nitride phase Ge₂ N₂ (GeH₂ ) in the Cmc 2₁ structure are proposed in this work. The novel proposed Si₂ N₂ (SiH₂ ) and Ge₂ N₂ (GeH₂ ) are both mechanically and dynamically stable. The electronic band calculation of the HSE06 hybrid functional shows that C₂ N₂ (CH₂ ), Si₂ N₂ (SiH₂ ) and Ge₂ N₂ (GeH₂ ) are all wide band gap semiconductor materials, and C₂ N₂ (CH₂ ) and Si₂ N₂ (SiH₂ ) are direct band gap semiconductor materials, while Ge₂ N₂ (GeH₂ ) is a quasi-direct band gap semiconductor material, the band gap of C₂ N₂ (CH₂ ), Si₂ N₂ (SiH₂ ) and Ge₂ N₂ (GeH₂ ) are 5.634 eV, 3.013 eV, and 2.377 eV, respectively. The three-dimensional and plane distributions of Young’s modulus, shear modulus and Poisson’s ratio of C₂ N₂ (CH₂ ), Si₂ N₂ (SiH₂ ) and Ge₂ N₂ (GeH₂ ) show that these materials have different degrees of mechanical anisotropy. The order of Young’s modulus of Si₂ N₂ (SiH₂ ) and Ge₂ N₂ (GeH₂ ) in different directions is different from that of C₂ N₂ (CH₂ ). When the tensile axis is in a particular direction, the order of the Young’s modulus of Si₂ N₂ (SiH₂ ): E _[110] <E _[120] <E _[111] <E _[101] <E _[010] =E _[100] <E _[011] <E _[001], and the order of the Young’s modulus of Ge₂ N₂ (GeH₂ ): E _[110] <E _[111] <E _[101] <E _[120] <E _[100] <E _[010] <E _[011] <E _[001] .     

The Branching Rules for SU(2N)⊃(SU(N)⊃O(N)⊃O(3))⊗SU(2) and the Highest Weight States for SU(N) and O(N)

Simple analytical recurrent formulae of the branching rules for group chain SU(2N)⊃(SU(N)⊃O(N)⊃O(3))⊗SU(2) are obtained. The highest weight states for the irreducible representations [2^al^b] or {nS} of group SU(N) and for the irreducible representations (2^α1^β) or (υS) of group O(N) are constructed respectively     

Mechanisms of metastable N2 and Kr electron stimulated desorption from N2---Kr double layer and mixed films

Desorption of metastable particles from layered and mixed films, composed of N₂ and Kr, is induced by the impact of 6–50 eV monoenergetic electrons. From yield functions and time-of-flight analysis of the metastable particles emanating from these films, N*₂ and Kr* are identified as the desorbing species. Basic mechanisms responsible for their desorption are discussed. It is suggested that the desorption of Kr* arises from dissociation of transitory [Kr·N₂]* excimers. The desorption of N*₂ can arise from cavity expulsion, intramolecular vibrational energy transfer (with or without prior electronic excitation energy transfer from Kr excitions to N₂) and the dissociation of [Kr·N₂]* excimers.     

Excitation, ionization, and reaction mechanism of a reactivecathodic arc deposition of TiN

This paper discusses the excitation, ionization and reaction mechanism of reactive cathodic arc deposition of TiN. Such arc plasmas art operated in the arc discharge type PVD apparatus. The 50 A arc is operated in N₂ atmosphere of 0.13 to 26.6 Pa. The arc voltage, the electron energy distribution and the spectral intensities are measured as a function of pressure. The deposited films are analyzed by XPS. It follows from the result that (1) the N₂ molecules impact with the high energy electron to be excited or ionized; (2) Ti ⁺⁺ ions which are initially emitted from the cathode spot recombine with electrons and turn Ti⁺ ions and Ti atoms and the recombination ratio increases with increasing pressure; (3) the TiN compound is produced on the substrate surface in the ensuing process, the excited N₂ are adsorbed on the substrate surface, the N ₂ are dissociated to N atoms through collisions with Ti⁺ ions of 40-60 eV, the N atoms react with the Ti atoms to form TiN     

(C_5H_(11)N_2)~+和(C_7H_(12)N_2)~(2+)的NMR研究

结合1H NMR,13C NMR谱,分别对钨、钼配合物{WO2(C10H6O2)2(C5H11N2)2[H2N(CH2)3NH2]}3(1),{(C5H11N2)2[H2N(CH2)3NH2][MoO2(C10H6O2)2]}(2),{(C7H12N2)2[MoO2(C10H8O2)2]}(3)晶体结构中小分子环进行了归属.其中,配合物1和2中(C5H11N2)+的NMR研究证实了六元环由1,3-丙二胺和乙腈化合而成,配合物3中(C7H12N2)2+的NMR谱图证实了七元环由乙二胺和乙酰丙酮化合而成,并且推导出这些亲核加成-消除反应的反应机理.配合物1~3中的小分子环的合成在其它体系中尚未见报导,而在合成它们的反应中作为新产物随主体晶体析出,并由晶体结构解析和NMR得到了证实.     

N2流量对N掺杂MgZnO薄膜结构和性能的影响

利用射频磁控溅射方法,使用Mg_{0. 04}Zn_0.96O 陶瓷靶材,选用不同流量比的氮气和氩气混和气体作为溅射气体,在石英基片上生长N掺杂Mg_xZn_1-xO合金薄膜。研究了氮流量比对薄膜组分、结构、形貌、电学性质和拉曼光谱的影响。结果显示：随着溅射气氛中氮流量比的增加,薄膜中Mg含量增加,薄膜表面颗粒尺寸减小,结晶质量变差,电阻率逐渐增大,导电类型发生转变。在氮流量比为20%时,获得了最好的p型导电薄膜。另外,随着氮流量比的增加,拉曼光谱中与N_O相关的位于272 cm^-1、642 cm^-1左右的振动峰逐渐增强,表明N_O的浓度随着氮流量比的加大而有所增加。     

Integrated band intensities in N2O4 in the infrared range

We have measured the integrated band intensities of the ν₉ and ν₁₁ bands of N₂O₄ which are observed around 1757 and 1261 cm^-1, respectively. By varying temperature and pressure, we have obtained: S_band(ν₉) = 9.60(130), 9.10(24), 8.80(66) and S_band(ν₁₁)= 5.93(64), 5.70(21) and 5.33(46) (in 10^-17 cm/molecule) at 293.15 (60), 277.25 (60) and 261.65 (60) K, respectively.     

Comparison of electrical discharge techniques for nonthermal plasmaprocessing of NO in N2

This paper presents a comparative assessment of three types of electrical discharge reactors: 1) pulsed corona, 2) dielectric-barrier discharge, and 3) dielectric-pellet bed reactor. The emphasis is on the efficiency for electron-impact dissociation of N₂(e+N₂ →e+N+N) and the subsequent chemical reduction of NO by nitrogen atoms (N+NO→N₂+O). By measuring the concentration of NO as a function of input energy density in dilute mixtures of NO in N₂, it is possible to determine the specific energy cost for the dissociation of N₂. Our experimental results show that the specific energy consumption (eV per NO molecule reduced) of different types of electrical discharge reactors are all similar. These results imply that, during radical production in electrical discharge reactors, the electric field experienced by the plasma is space-charge shielded to approximately the same value. The specific energy consumption for the dissociation of N₂ using electrical discharge processing is measured to be around 240 eV per nitrogen atom produced. In the NO-N₂ mixture, this corresponds to a specific energy consumption of around 240 eV per NO molecule reduced     

点缺陷浓度对非化学计量比L12型结构的A13Sc弹性性能的影响

采用密度泛函理论与Wagner-Schottky热力学模型计算了金属间化合物L1₂-A1₃Sc中点缺陷浓度与温度、成分间的关系. 结果表明: 在考察的温度区间(T=300-1200 K), 理想化学计量比L1₂-A1₃Sc中的点缺陷主要为Al空位和Sc空位, 且缺陷浓度较低(在1200 K时仅约为10^-6). 当L1₂-A1₃Sc偏离化学计量比成分时, 富Al成分端的点缺陷主要为Al反位与Sc空位, 且两种缺陷的浓度相当; 富Sc成分端的点缺陷则主要为Sc反位. 利用超胞模型进一步计算了含点缺陷L1₂-A1₃Sc晶体的弹性常数, 并计算预测了点缺陷形式和浓度对其弹性性能的影响. 结果表明: 在理想化学计量比成分附近, 点缺陷的引入均会降低非化学计量比L1₂-Al₃Sc晶体的杨氏、剪切和体积弹性模量, 增加非化学计量比L1₂-Al₃Sc弹性性能的各向异性, 但是对其脆-韧性的影响不大.     

第一性原理研究O和S掺杂的石墨相氮化碳(g-C_3N_4)_6量子点电子结构和光吸收性质

利用密度泛函和含时密度泛函理论研究了氧(O)和硫(S)原子掺杂的石墨相氮化碳(g-C_3N_4)_6量子点的几何、电子结构和紫外-可见光吸收性质.结果表明:掺杂后(g-C_3N_4)_6量子点杂质原子周围的C-N键长发生了一定的改变,最高电子占据分子轨道-最低电子未占据分子轨道(HOMO-LUMO)能隙显著减小.形成能的计算表明O原子取代掺杂的(g-C_3N_4)_6量子点体系更稳定,且O原子更易取代N3位点,而S原子更易取代N8位点.模拟的紫外-可见电子吸收光谱表明,O和S原子的掺杂改善了(g-C_3N_4)_6量子点的光吸收,使其吸收范围覆盖了整个可见光区域,甚至扩展到了红外区.而且适当的杂质浓度使(g-C_3N_4)_6量子点光吸收在强度和范围上都得到明显改善.通过O和S掺杂的比较,发现二者在可见光区对(g-C_3N_4)_6量子点的光吸收有相似的影响,然而在长波长区域二者的影响有明显差异.总体而言,O掺杂要优于S掺杂对(g-C_3N_4)_6量子点光吸收的影响.     

Reduction Factors for O(N)⊃O(NK-1)

In terms of the concept of irreducible tensor basis and the properties of irreducible tensor operator, we give, by mathematical induction, the irreducible representations of O(N) for (m_1Nm_2N...m_[N/2]N) and all reduction factors of O(N)⊃O(N-1) for (1 0...0)⊗(m_1Nm_2N...m_[N/2]N)     

Second harmonic stimulated Raman scattering of laser radiation in aplasma

A high-power linearly polarized laser propagating through a plasma produces oscillatory electron velocity at the second harmonic due to-the ν&oarr;×B&oarr; force, This velocity couples a Langmuir wave (ω, k&oarr;) and an electromagnetic wave (ω₁, k&oarr;₁), where ω₁=ω-2ω₀ , k-2k&oarr;₀ and ω₀, k&oarr;₀ are frequency and wavenumber of the laser pump, causing second harmonic Raman scattering. The growth rate is maximum for side scattering. This process can occur above the quarter critical density, unlike the first harmonic stimulated Raman scattering which occurs below the quarter critical density     

纯铜[0 1 1]倾侧型非共格∑3晶界结构稳定性分子动力学模拟研究

有研究表明, 非共格∑₃晶界的行为在中低层错能面心立方金属晶界 特征分布演化中发挥着重要作用. 为了掌握不同界面匹配的非共格∑₃晶界的特性, 本文利用分子动力学(MD)模拟方法首先研究了纯铜的[0 1 1]倾侧型 非共格∑₃晶界在700–1100 K温度范围内和常压下的结构稳定性. MD模拟采用原子间相互作用长程经验多体势, 步长为5×10^-15 s. 模拟结果表明: 所研究的五个非共格∑₃晶界, 其结构稳定性存在很大差异, 其一般规律是, 与(1 1 1)/(1 1 1)共格孪晶界之间的夹角(Φ角)越小, 晶界匹配值越大, 则非共格∑₃晶界越稳定; 反之亦然. Φ角最小的 (2 5 5)/(2 1 1)非共格∑₃晶界较稳定, 在退火过程中几乎不发生变化. 随着Φ角的增大, 非共格∑₃晶界不再稳定, 这类晶界会通过Miller指数较高一侧晶体每三层原子面合并为一层原子面 (或Miller指数较低一侧晶体每一层原子面分解为三层原子面)的机理 转变为亚稳的“台阶”状晶界, 台阶面部分地处于精确的能量极低 的{111}/{111}共格孪晶界上; 当提高温度退火时, 这种“台阶”状晶界最终会全部转变成稳定平直的{111}/{111}共格孪晶界. 关键词： 纯铜 ∑₃晶界')" href="#">非共格∑₃晶界 分子动力学模拟     

具有生物活性钼钨仿生配合物与ATP作用的NMR研究

在常温下合成了以邻苯二酚为配体,分别以乙二胺、1,2-丙二胺、1,3-丙二胺为抗衡离子的7种手性钼钨八面体配合物(NH2CH2CH2NH3)3[Mo(V)O2(OC6H4O)2](1),(NH2CH2CH2NH3)2[W(VI)O2(OC6H4O)2](2),(NH2CH2CH2NH3)2.5[Mo(V)0.5W(VI)0.5O2(O2C6H4)]2](3),(NH3CH2CHNH2CH3)3[Mo(V)O2(OC6H4O)2](4),(NH3CH2CHNH2CH3)2[W(VI)O2(OC6H4O)2](5),(NH3CH2CHNH2CH3)2.5[Mo(V)0.5W(VI)0.5O2(OC6H4O)2](6),(NH3CH2CH2CH3NH2)2.5[Mo(V)0.5W(VI)0.5O2(OC6H4O)2](7),并在生理条件下对其与ATP的相互作用进行了液体NMR研究,发现标题配合物的中心金属离子在纯D2O溶剂中大多数以+5价形式存在,W(VI)被还原为W(V),但与ATP混合后又转化为+6价,配合物原有的顺磁性特征完全消失.研究还发现ATP可以促进中心离子与原配体发生解离.     

Infrared absorbance cross-sections for dinitrogen pentoxide vapour

Laboratory measurements of the ν₁₂ absorption band of gaseous N₂O₅ have been made using Fourier transform infrared (FTIR) spectroscopy at seven different temperatures between 233 and 293 K. Integrated band strengths and absorbance cross-sections per molecule show no significant temperature dependence. Their average values are S_int = (4.09±0.17) × 10^-17 cm molecule ^-1 and σ_peak = (1.90±0.08) × 10^-18 cm² molecule^-1.