Study of Ni80Fe20／Fe50Mn50 superlattice microstructures by transmission electron microscopy and x—ray diffraction

The detailed microstructures of Ni80Fe20/Fe50Mn50 superlattices have been characterized using both x-ray diffraction techniques and transmission electron microscopy.The obrivous layered structure,typical column structure and twins which exist in Ni80Fe20/Fe50Mn50 superlattices were observed through performing transmission microscopy.By combining the technique of lowangle x-ray reflectivity(specular and off-specular scans)with the anomalous scattering effect and high-angle x-ray diffraction(using conventional x-ray),wequantitatively analysed the microstructural variation as a function of annealing temperature.It is found that the lateral correlation length,the(111)peak intensity of the superlattices and the average multilayer coherence length all increase with a rise in annealing temperature annealing can decrease the rootmean-square roughness at the interfaces of Ni80Fe20/Fe50Mn50 superlattices.the obtained microstructural knowledge will be helpful in understanding the magnetic properties of the ni80Fe20/Fe50Mn50 exchange bias system.     

The influence of AlN/GaN superlattice intermediate layer on the properties of GaN grown on Si（111） substrates

AlN/GaN superlattice buffer is inserted between GaN epitaxial layer and Si substrate before epitaxial growth of GaN layer. High-quality and crack-free GaN epitaxial layers can be obtained by inserting AlN/GaN superlattice buffer layer. The influence of AlN/GaN superlattice buffer layer on the properties of GaN films are investigated in this paper. One of the important roles of the superlattice is to release tensile strain between Si substrate and epilayer. Raman spectra show a substantial decrease of in-plane tensile strain in GaN layers by using AlN/GaN superlattice buffer layer. Moreover, TEM cross-sectional images show that the densities of both screw and edge dislocations are significantly reduced. The GaN films grown on Si with the superlattice buffer also have better surface morphology and optical properties.     

Influence of interface roughness on reflectivity of tungsten/boron-carbide multilayers with variable bi-layer number by X-ray reflection and diffuse scattering

Infuence of interface roughness on the reflectivity of Tungsten/boron-carbide （W/B4C） multilayers varying with bi-layer number, N, is investigated. For W/B4C multilayers with the same design period thickness of 2.5 nm, a real-structure model is used to calculate the variation of reflectivities with N = 50, 100, 150, and 200, respectively. Then, these multilayers are fabricated by a direct current （DC） magnetron sputtering system. Their reflectivity and scattering intensity are measured by an X-ray diffractometer （XRD） working at Cu Kα line. The X-ray reflectivity measurement indicates that the reflectivity is a function of its bi-layer number. The X-ray scattering measured results show that the interface roughness of W/B4C multilayers increases slightly from layer to layer during multilayer growing. The variation of the reflectivity and interface roughness with bi-layer number is accurately explained by the presented realstructure model.     

Determination of Tungsten Layer Profiles in Bilayer Structures Using X-Ray Reflectivity Method

An effectual method is presented to determine the profiles of a tungsten （W） layer, such as the density, the thickness and the roughness in the multilayer structures, using the x-ray reflectivity technique. To avoid oxidation effects of tungsten, a B4 C capping layer is deposited onto to the W layer. To observe the profiles of the tungsten layer with different thicknesses, three groups of W/B4 C bilayers with different thicknesses are prepared by using ultra high vacuum dc magnetron sputtering and measured by an x-ray diffractometer. A type of genetic algorithm called the differential evolution is used to simulate the measurement data so as to obtain the parameters of bilayers. According to the simulation, it is shown that the W layer density varies from 95.26% to 97.51% compared to the bulk. In our experiment, the deposition rate is 0.044 nm/s, and the thickness is varied in the range of 9.8-19.4 nm.     

Two-dimensional metallic behavior at polar MgO/BaTiO_3(110) interfaces

The first-principles calculations are employed to investigate the electrical properties of polar MgO/BaTiO3(110)interfaces. Both n-type and p-type polar interfaces show a two-dimensional metallic behavior. For the n-type polar interface,the interface Ti3d electrons are the origin of the metallic and magnetic properties. Varying the thickness of Ba TiO3 may induce an insulator–metal transition, and the critical thickness is 4 unit cells. For the p-type polar interface, holes preferentially occupy the interface O 2p y state, resulting in a conducting interface. The unbalance of the spin splitting of the O 2p states in the interface Mg O layer leads to a magnetic moment of about 0.25μB per O atom at the interface.These results further demonstrate that other polar interfaces, besides LaAlO3/SrTiO3, can show a two-dimensional metallic behavior. It is helpful to fully understand the role of polar discontinuity on the properties of the interface, which widens the field of polar-nonpolar interfaces.     

Properties of metal–insulator–metal waveguide loop reflector

A new type and easy-to-fabricate metal–insulator–metal(MIM) waveguide reflector based on Sagnac loop is designed and investigated.The transfer matrix theoretical model for the transmission of electric fields in the reflector is established,and the properties of the reflector are studied and analyzed.The simulation results indicate that the reflectivity strongly depends on the coupling splitting ratio determined by the coupling length.Accordingly, different reflectivities can be realized by varying the coupling length.For an optimum coupling length of 750 nm, the 3-dB reflection bandwidth of the MIM waveguide reflector is as wide as 1.5 μm at a wavelength of 1550 nm, and the peak reflectivity and isolation are 78%and 23 dB, respectively.     

Fabrication of GaN-Based Heterostructures with an InA1GaN/AlGaN Composite Barrier

GaN-based heterostructures with an InAlGaN/AlGaN composite barrier on sapphire(0001)substrates are grown by a low-pressure metal organic chemical vapor deposition system.Compositions of the InAlGaN layer are determined by x-ray photoelectron spectroscopy,structure and crystal quality of the heterostructures are identified by high resolution x-ray diffraction,surface morphology of the samples are examined by an atomic force microscope,and Hall effect and capacitance-voltage measurements are performed at room temperature to evaluate the electrical properties of heterostructures.The Al/In ratio of the InAlGaN layer is 4.43,which indicates that the InAlGaN quaternary layer is nearly lattice-matched to the GaN channel.Capacitance—voltage results show that there is no parasitic channel formed between the InAlGaN layer and the AlGaN layer.Compared with the InAlGaN/GaN heterostructure,the electrical properties of the InAlGaN/AlGaN/GaN heterostructure are improved obviously.Influences of the thickness of the AlGaN layer on the electrical properties of the heterostructures are studied.With the optimal thickness of the AlGaN layer to be 5nm,the 2DEG mobility,sheet density and the sheet resistance of the sample is 1889.61 cm~2/V·s,1.44×10~(13)cm~(-2)and as low as 201.1Ω/sq,respectively.     

Characterization of Al2O3 Thin Films on GaAs Substrate Grown by Atomic Layer Deposition

Al2O3 thin films are grown by atomic layer deposition on GaAs substrates at 300℃. The structural properties of the Al2O3 thin film and the Al2O3/GaAs interface are characterized using x-ray diffraction （XRD）, high- resolution transmission electron microscopy （HRTEM）, and x-ray photoelectron spectroscopy （XPS）. The XRD results show that the as-deposited Al2O3 film is amorphous. For 30 atomic layer deposition growth cycles, the thicknesses of the Al2O3 thin film and the interface layer from the HRTEM are 3.3 nm and 0.Snm, respectively. XPS analyses reveal that the Al2O3/GaAs interface is almost free from As2O3.     

Research of Trap and Electron Density Distributions in the Interface of Polyimide/Al_2O_3 Nanocomposite Films Based on IDC and SAXS

The distributions of traps and electron density in the interfaces between polyimide(PI) matrix and Al_2O_3 nanoparticles are researched using the isothermal decay current and the small-angle x-ray scattering(SAXS) tests.According to the electron density distribution for quasi two-phase mixture doped by spherical nanoparticles, the electron densities in the interfaces of PI/Al_2O_3 nanocomposite films are evaluated. The trap level density and carrier mobility in the interface are studied. The experimental results show that the distribution and the change rate of the electron density in the three layers of interface are different, indicating different trap distributions in the interface layers. There is a maximum trap level density in the second layer, where the maximum trap level density for the nanocomposite film doped by 25 wt% is 1.054×10~(22) eV·m~(-3) at 1.324 eV, resulting in the carrier mobility reducing. In addition, both the thickness and the electron density of the nanocomposite film interface increase with the addition of the doped Al_2O_3 contents. Through the study on the trap level distribution in the interface, it is possible to further analyze the insulation mechanism and to improve the performance of nano-dielectric materials.     

Charge trapping behavior and its origin in Al_2O_3/SiC MIS system

Charge trapping behavior and its origin in Al2O3/SiC MOS structure are investigated by analyzing the capacitance–voltage(C–V) hysteresis and the chemical composition of the interface. The C–V hysteresis is measured as a function of oxide thickness series for an Al2O3/SiC MIS capacitor. The distribution of the trapped charges, extracted from the C–V curves, is found to mainly follow a sheet charge model rather than a bulk charge model. Therefore, the electron injection phenomenon is evaluated by using linear fitting. It is found that most of the trapped charges are not distributed exactly at the interface but are located in the bulk of the Al2O3 layers, especially close to the border. Furthermore, there is no detectable oxide interface layer in the x-ray photoelectron spectroscope(XPS) and transmission electron microscope(TEM)measurements. In addition, Rutherford back scattering(RBS) analysis shows that the width of the Al2O3/SiC interface is less than 1 nm. It could be concluded that the charge trapping sites in Al2O3/SiC structure might mainly originate from the border traps in Al2O3 film rather than the interface traps in the interfacial transition layer.     

Effect of compensation doping on the electrical and optical properties of mid-infrared type-II InAs/GaSb superlattice photodetectors

This paper presents a theoretical study on the electrical and optical properties of mid-infrared type-II InAs/GaSb superlattices with different beryllium concentrations in the InAs layer of the active region. Dark current, resistance-area product, absorption coefficient and quantum efficiency characteristics are thoroughly examined. The superlattice is residually n-type and it becomes slightly p-type by varying beryllium-doping concentrations, which improves its electrical performances. The optical performances remain almost unaffected with relatively low p-doping levels and begin to deteriorate with increasing p-doping density. To make a compromise between the electrical and optical performances, the photodetector with a doping concentration of 3 × 1015 cm-3 in the active region is believed to have the best overall performances.     

Electron transport across a quantum wire embedding a saw-tooth superlattice

By developing the recursive Green function method, the transport properties through a quantum wire embedding a finite-length saw-tooth superlattice are studied in the presence of magnetic field. The effects of magnetic modulation and the geometric structures of the superlattice on transmission coefficient are discussed. It is shown that resonant peak splitting of this kind of structure is different from that of ‘magnetic' and ‘electric' superlattices in two-dimensional electron gas. The transmission spectrum can be tailored to match requirements through adjusting the size of saw-tooth quantum dot and field strength.     

Charge transport in monolayer poly（3-hexylthiophene） thin-film transistors

It is found that ultrathin poly（3-hexylthiophene） （P3HT） film with a 2.5 nm-thick layer exhibits a higher mobility of 5.0× 10-2 cm2/V-s than its bulk counterpart. The crystalline structure of the as-fabricated ultrathin P3HT layer is verified by atomic force microscopy as well as grazing incidence X-ray diffraction. Transient measurements of the as-fabricated transistors reveal the influence of the interface traps on charge transport. These results are explained by the trap energy level distribution at the interface manipulated by layers of polymer film.     

Determination of Mean Thickness of an Oxide Layer on a Silicon Sphere by Spectroscopic Ellipsometry

One of the biggest obstacles to reduce the uncertainty of the Avogadro constant NA is such that there will be an oxide layers on the surface of a silicon sphere. The thickness of this layer is measured by a modified spectroscopic ellipsometer, which can eliminate the influence of the curved surface, and the results are calibrated by x-ray reflectivity. Fifty positions distributed nearly uniformly on the surface of the silicon sphere are measured twice. The results show that the mean thickness of the overall oxide layer is 3.75 nm with the standard uncertainty of 0.21 nm, which means that the relative uncertainty component of NA owing to this layer can be reduced to 1.2 × 10^-8.     

Study of Tyvek reflectivity in water

Tyvek is widely used as the inner lining material of water Cherenkov detectors. Therefore, information about its optical properties plays an important role in the simulation and reconstruction of particles passing through water Cherenkov detectors. In this paper, a water tank experiment is performed to study the Tyvek reflectivity in water. The so-called UNIFIED model, which is an optical model of surface reflection in Geant4, is adopted to describe the Tyvek reflectivity. Two key optical parameters are obtained from a comparison between the measured data and a Monte Carlo simulation.     

Microstructural and electromagnetic properties of MnO2 coated nickel particles with submicron size

Nickel particles with submicron size are prepared by using the solvothermal method. These spheres are then coated with a layer of MnO2 using the soft chemical method. The microstructure is characterized by x-ray diffraction, transmission electron microscopy, and scanning electron microscopy. Energy x-ray dispersive spectrometry and high-resolution images show that the granular composites have a classical core/shell structure with an MnO2 superficial layer,no more than 10 nm in thickness. The hysteresis measurements indicate that these submicron-size Ni composite powders have small remanence and moderate coercivity. The electromagnetic properties of the powders measured by a vector network analyzer in a frequency range of 2-18 GHz are also reported in detail.     

Determination of interface layer thickness of a pseudo two—phase system by extension of the Debye equation

The Debye equation with slit-smeared small angle x-ray scattering(SAXS) data is extended form an ideal two-phase system to a pseudo two-phase system with the presence of the interface layer,and a simple accurate solution is proposed to determine the average thickness of the interface layer in porous materials.This method is tested by experimental SAXS data,which were measured at 25℃,of organo-modified mesoporous silica prepared by condensation of tetraethoxysiland(TEOS) and methyltriethoxysilane(MTES) using non-ionic neutral surfactant as template under neutral condition.     

Evanescent waves of an annular left-handed material lens

The imaging system formed by an annular left-handed material （LHM） lens as well as the evanescent waves in the lens are simulated numerically with a finite-difference time-domain （FDTD） method. For b - a 〉 λ （a and b are respectively the inner and outer radii of the annular lens, and λ is the wavelength）, when a point source is placed at an internal grid point, we demonstrate that the evanescent waves are produced around the internal interface, and cannot propagate outwards. As for b - a 〈λ ）,, the evanescent waves appear around both the internal and the external interfaces, which remarkably implies the coupling between the two interfaces. Hence it can be inferred that the evanescent waves around the external interface participating in the super-resolution imaging result from the coupling of the evanescent waves around the interface. Moreover, the partly uncomprehended properties of the evanescent waves in the LHM slab are also disclosed. It is conducive to understanding the evanescent waves in the LHMs further.     

Microstructure of Epitaxial Er2O3 Thin Film on Oxidized Si （111） Substrate

Er2O3 thin films are grown on oxidized Si （111） substrates by molecular beam epitaxy. The sample grown under optimized condition is characterized in its microstructure, surface morphology and thickness using grazing incidence x-ray diffraction （GIXRD）, atomic force morphology and x-ray reflectivity. GIXRD measurements reveal that the Er2O3 thin film is a mosaic of single-crystal domains. The interplanar spacing d in-plane residual strain tensor ell and the strain relaxation degree ε are calculated. The Poisson ratio μ obtained by conventional x-ray diffraction is in good agreement with that of the bulk Er2O3. In-plane strains in three sets of planes, i.e. （440）, （404）, and （044）, are isotropic.     

Confined and Interface Phonons in Chirped GaAs-A1GaAs Superlattices

The confined longitudinal optical, transverse optical and interface phonon modes in chirped GaAs-AIGaAs superlattices grown on the （O01）-oriented GaAs substrate are studied by the micro-Raman spectroscopy. The phonon modes are probed at the （001） and （110） faces. The temperature dependence of the longitudinal optical, transverse optical and interface phonon modes are achieved. The temperature dependence of the longitudinal optical phonon frequencies demonstrates that a tensile strain exists in the GaAs layers of the chirped superlattices, which is significant for analyzing the device failure of a terahertz quantum cascade laser.