磁场及体各向异性对面心立方双层铁磁薄膜能带的影响

利用二次量子化方法研究了由相同面心立方结构(100)材料构成的铁磁性双层薄膜,重点讨论了磁场及体各向异性对面心立方双层铁磁薄膜能带的影响.结果表明,无论界面为铁磁性界面交换作用或反铁磁性界面交换作用,磁场及各向异性场对对称薄膜中的自旋波存在方式及整个能带形状没有影响,只是影响整个激发模的能量.磁场和各向异性常数越大,自旋波能量越高.     

面内磁场对硬磁泡形成的影响

实验研究了面内磁场对一次脉冲偏磁场作用下外延石榴石薄膜中硬磁泡形成的影响,发现存在一个使硬磁泡不再形成的临界面内磁场H_in⁰,它与材料参量有关,通过实验,运用面内磁场对条状畴的作用和枝状畴的形成,定性解释了软硬磁泡形成的分界场H_[b]随面内磁场增大、快降以及缓降这三个物理过程。 关键词：     

磁泡材料的磁滞迴线和泡阵磁畴的剩磁

本文采用一种用光电倍增管作为检测装置的技术,可以自动绘出透明磁性介质的磁滞迴线,测得了不同磁泡外延膜样品,在不同磁畴形状等条件下的磁迴线;解释了曲线的特点,并从实验上证实,具有泡阵磁畴的磁泡膜是处于一种特殊的剩磁状态。 关键词：     

面内场和静态偏磁场作用下条畴和泡畴的稳定性

实验研究面内场H_in和静态偏磁场H_b作用下,(111)面磁泡膜内条畴的消失过程。保持H_b恒定,增加H_in,测量条畴消失场H_s^*和泡畴消失场H_k^*与面内场方向β的变化关系。计及立方磁晶各向异性的影响,建立H_in和H_b共同存在时的条畴稳定性理论。定性解释了实验的主要特点。导出黑、白条畴同时消失时的角度 β_n=1/3(2nπ±arc cos│3/(2^1/2)(M_sH_b)/K₁│)(n=0,±1,±2,…)与实验基本符合。 关键词：     

石榴石磁泡膜中3类硬磁畴的形成方法

研究石榴石磁泡膜中硬磁畴畴壁中垂直布洛赫线的稳定性可为研制布洛赫线存储器提供有益的帮助 .3类硬磁畴的形成是研究硬磁畴稳定性的前提 .本文综述了在石榴石磁泡膜上形成硬磁畴的 2类方法———“脉冲偏场法”和“低直流偏场法” .结合文献中的典型样品 ,对用“脉冲偏场法”和“低直流偏场法”形成 3类硬磁畴的过程进行了简单介绍 .     

磁畴和畴壁的实验演示

利用透射光法进行磁畴和畴壁的实验演示，在磁性材料中的薄膜中，若无外加磁场时，可以观察到很多蜿蜒曲折的条状磁畴，当垂直薄膜面上加一个磁场（磁化场）时，这些条状磁畴就会产生变化，凡与外加磁场方向一致的磁畴体积扩大，与加外磁场方向相反的磁畴体积会缩小。     

强磁物质的局域电子磁晶各向异性

本文系统地讨论了局域电子磁晶各向异性的研究进展。文中详细介绍了最为成功的单离子各向异性理论,包括适用于3d过渡族,4d和5d族及4f族离子的不同的处理方法。对于磁偶极子及各向异性交换作用的双离子理论的计算方法也作了扼要的介绍。文中进而讨论了各类铁氧体磁晶各向异性的解释及控制。对稀土金属及稀土合金的各向异性的研究现状也作了简要的叙述。     

强磁物质的局域电子磁晶各向异性

本文系统地讨论了局域电子磁晶各向异性的研究进展。文中详细介绍了最为成功的单离子各向异性理论,包括适用于3d过渡族,4d和5d族及4f族离子的不同的处理方法。对于磁偶极子及各向异性交换作用的双离子理论的计算方法也作了扼要的介绍。文中进而讨论了各类铁氧体磁晶各向异性的解释及控制。对稀土金属及稀土合金的各向异性的研究现状也作了简要的叙述。     

具有条纹磁畴结构的NiFe薄膜的制备与磁各向异性研究

具有条纹磁畴结构的磁性薄膜表现出面内转动磁各向异性,对于解决高频电子器件的方向性问题起着至关重要的作用.本文采用射频磁控溅射的方法,研究了NiFe薄膜的厚度、溅射功率密度、溅射气压等制备工艺参数对条纹磁畴结构、面内静态磁各向异性、面内转动磁各向异性、垂直磁各向异性的影响规律.研究发现,在功率密度15.6 W/cm~2与溅射气压2 mTorr(1 Torr=1.33322×102Pa)下生长的NiFe薄膜,表现出条纹磁畴的临界厚度在250 nm到300 nm之间.厚度为300 nm的薄膜比250 nm薄膜的垂直磁各向异性场增大近一倍,从而磁矩偏离膜面形成条纹磁畴结构,并表现出面内转动磁各向异性.高溅射功率密度可以降低薄膜出现条纹磁畴的临界厚度.在相同功率密度15.6 W/cm~2下生长300 nm的NiFe薄膜,随着溅射气压由2 mTorr增大到9 mTorr,NiFe薄膜的垂直磁各向异性场逐渐由1247.8 Oe(1 Oe=79.5775 A/m)增大到3248.0 Oe,面内转动磁各向异性场由72.5 Oe增大到141.9 Oe,条纹磁畴周期从0.53μm单调减小到0.24μm.NiFe薄膜的断面结构表明柱状晶的形成是表现出条纹磁畴结构的本质原因,高功率密度下低溅射气压有利于柱状晶结构的形成,表现出规整的条纹磁畴结构,高溅射气压会导致柱状晶纤细化,面内转动磁各向异性与面外垂直磁各向异性增强,条纹磁畴结构变得混乱.     

W型六角铁氧体的磁晶各向异性

本文根据晶场理论用点电荷近似计算了Zn₂-W六角铁氧体七个晶位(2d,4e,4f_Ⅳ,4f_Ⅵ,6g,12k和4f)Fe³⁺离子的单离子各向异性。结果正如我们所预期的,各个晶位都有一定贡献,且既有正的贡献,也有负的贡献,能够解释对Zn₂-W作离子置换的实验结果。 关键词：     

ANNIHILATION OF VERTICAL-BLOCH-LINE CHAINS IN THE WALLS OF ORDINARY HARD BUBBLES SUBJECTED TO JOINT STATIC BIAS FIELD AND IN-PLANE FIELD

For the ordinary hard bubbles(OHBs) of garnet bubble films, the annihilation of the vertical-Bloch line (VBL) chains in their walls subjected to joint static bias field H_b and in plane field H_ip was experimentally studied. The curves of two critical in-plane fields, H⁽¹⁾_ip and H′_ip, vs H_b were measured. By means of the so-called "head-cut" and "tail-cut" experiments designed in this work, it was verified that for the OHBs subjected to H_ip, their VBL chains with different lengths lose VBLs and become shorter simultaneously. It was also verified that the critical in-plane fields H⁽¹⁾_ipand H′_ip correspond to the break down of the shortest and longest VBL chains of OHBs, respectively.     

STABILITY OF SECOND KIND OF DUMBBELL DOMAINS SUBJECTED TO AN IN-PLANE FIELD AT DIFFERENT BIAS FIELDS

The softening process of the second kind of dumbbell domalns(liDs) in garnet bubble films subjected to an in-plane field H_ip at different static bias field H_b was studied experimentally. It was found that when H_b is larger, the remaining percentage of IID, R_IID, drops sharply at a certain H_ip, and with the increase of H_b the drop occurs at lower H_ip and becomes more intensive. We have confirmed that this is related to the "spontaneous-shrink" 0f IIDs, which plays an important role for the breakdown oF vertical Bloeh line chains of lids subjected to joint fields H_ip and H_b .     

ANNIHILATION OF VERTICAL-BLOCH-LINE CHAINS IN THE WALLS OF THE SECOND KIND OF DUMBBELL DOMAINS SUBJECTED TO AN IN-PLANE FIELD

An experiment was statistically performed on the annihilation of vertical-Bloch-line (VBL) chains in the walls of the second kind of dumbbell domains (ⅡDs) subjected to an in-plane field H_ip. It was again confirmed that there is a critical in-plane field H′_ip, above which all VBL chains of hard domains in garnet bubble films, including ⅡDa, disappear. Just like ordinary hard bubbles (OHBs), it was also found that there exists a critical range of H_ip, from (H_ip)_ID to H′_ip, for ⅡD softening. Over this range, with the increase of H_ip, more and more ⅡDs are softened, accompanied by the successive appearance of the first kind of dumbbell domains, OHBs and soft bubbles. In addition, for the five samples tested, the ratio, H′_ip/(H_ip)_ID, is obviously greater than 2^1/2.     

直流偏场和面内场联合作用下第二类哑铃畴的自发收缩

实验研究了第二类哑铃畴在直流偏场和面内场联合作用下的自发收缩现象，发现第二类哑铃畴的自发收缩不仅与面内场的大小有关，而且还与第二类哑铃畴在面内场中所处方向有关.采用照相法形象地揭示出：当第二类哑铃畴与面内场垂直时最容易发生自发收缩；当第二类哑铃畴与面内场平行时最难发生自发收缩.实验还证明了第二类哑铃畴在自发收缩过程中存在垂直布洛赫线的丢失现象.     

DYNAMIC STABILITY OF SKEW PLATES SUBJECTED TO AERODYNAMIC AND RANDOM IN-PLANE FORCES

This paper presents an investigation into the dynamic stability of skew plates acted upon simultaneously by an aerodynamic force in the chordwise direction and a random in-plane force in the spanwise direction. Due to this random in-plane force, the plate may become unstable before the aerodynamic force reaches its critical value. In this work, the finite element formulation is applied to obtain the discretized system equations. The system equations are then partially uncoupled and reduced in size by the modal truncation method. Finally, the unsmoothed and the smoothed versions of the stochastic averaging are used to calculate the system response, and the second-moment stability criterion is utilized to determine the stability boundary of the system. Numerical results show that the stability boundary obtained by the smoothed stochastic averaging is less conservative than that obtained by the unsmoothed version, and the former is the tangent of the latter at zero spectral density of the random in-plane force.     

ANNIHILATION OF VERTICAL-BLOCH-LINE CHAINS IN THE WALLS OF THE SECOND KIND OF DUMBBELL DOMAINS SUBJECTED TO JOINT STATIC BIAS FIELD AND IN-PLANE FIELD

Experiments were statistically carried out on the behavior of vertical-Bloch-line(VBL) chains in the walls of the second kind of dumbbell domains (IIDs) is garnet bubble films subjected to joint action of static bias field H_b and in-plane field H_ip. The curves of the four critical in-plane fields, (H_ip)_IID-ID (H_ip)_IID-OHB (H_ip)_IID-SB and H'_ip vs H_b were measured and explained. In particular, in terms of two series of IID photos, a new experimental manifestation of the unknown "number effect" of VBL chains was found.     

INFLUENCE OF IN-PLANE FIELD ON THE STABILITY OF VERTICAL BLOCH LINE CHAINS IN HARD DOMAINS OF GARNET BUBBLE FILMS

The stability of vertical Bloch line (VBL) chains was statistically studied for all three types of bard domains in garnet bubble films subjected to an in-plane field H_ip. With a set of integrate data taken from seven bubble samples and with two typical figures of a sample, four main features of the behavior of VBL chains subjected to H_ip were summarized.     

INFLUENCE OF IN-PLANE FIELD ON THE CRITICAL TEMPERATURE FOR THE BREAKDOWN OF VERTICAL BLOCH LINE CHAINS

The influence of in-plane field H_ip on the critical temperature T₀ for the breakdown of vertical Bloch line (VBL) chains of hard domains in garnet bubble films has been inves-tigated experimentally. It was found that T₀ can be significantly reduced by the increase of H_ip. Besides, the critical in-plane field H′_ip for the breakdown of VBL chains was measured as a function of temperature T for the same sample. As a result, the correlation between these two critical parameters, T₀ and H′_ip, was found. By introducing an effective in-plane field (H_ip)_e, the positive definiteness of the system of VBL pairs with two-dimemsional magnetization distribution was analyzed, giving rise to a theoretical expression of H′_ip(T): H′_ip(T) =|4πM_sQ(a₀+a₁Q +a₂Q²+a₃Q³+ a₄Q⁴)|^T_(T0(Hip=0)), where a_i are constants. It agrees well with the experiments.