疏水型SiO2光学增透膜的制备

以正硅酸乙酯（TEOS）为有机醇盐前驱体,采用溶胶-凝胶技术,通过酸/碱二步法控制实验条件,结合三甲基氯硅烷（TMCS）对胶粒表面的修饰过程,制备出结构可控的疏水型SiO2薄膜.采用椭偏仪、FTIR、接触角测试仪、SEM等对薄膜的折射率、红外特性、接触角以及表面形貌等进行了测量.研究结果表明,疏水型SiO2薄膜的折射率在1.33～1.18之间连续可调;SiO2胶粒表面的亲水性－OH中的H已部分被非活性－Si(CH3)3基团取代;接触角由表面未修饰膜的40°左右增加到表面修饰膜的120°左右.     

二氧化硅纳米粒子薄膜的制备及光学性能

以二氧化硅胶体和聚二烯丙基二甲基氯化铵(PDDA)为原料,利用静电自组装技术制备了PDDA/SiO2复合薄膜. TEM图象显示,薄膜中的SiO2纳米粒子为密堆积,薄膜均匀、致密;电子衍射实验结果显示,所组装的薄膜为非晶态膜.载玻片表面组装SiO2纳米粒子薄膜后,透射率随薄膜双层数增加呈现周期变化.薄膜具有增透作用,载玻片双面组装薄膜后在一定波长范围内的透射率可提高5％以上. PDDA/SiO2复合薄膜的光学性质主要由SiO2纳米粒子决定,每一双层的平均物理厚度小于SiO2纳米粒子的粒径,薄膜中存在层间穿插现象,逐层组装的复合薄膜具有单层光学薄膜的特性.     

TiO2/SiO2纳米薄膜的光催化活性和亲水性

通过sol gel工艺在钠钙玻璃表面制备了均匀透明的TiO2/SiO2复合纳米薄膜.实验结 果表明: 当SiO2添加量较高时, TiO2/SiO2复合纳米薄膜的光催化活性明显降低;当SiO2添加 量较低时,TiO2/SiO2复合薄膜的光催化活性无明显变化.在TiO2薄膜中添加SiO2,可以抑制薄 膜中TiO2晶粒的长大,同时薄膜表面的羟基含量增加, 水在复合薄膜表面的润湿角下降, 亲 水能力增强.当SiO2含量为10％－20％（摩尔分数）时获得了润湿角为0°的超亲水性薄膜.     

TiO_2/SiO_2纳米薄膜的光催化活性和亲水性

通过 sol-gel工艺在钠钙玻璃表面制备了均匀透明的 TiO2/SiO2复合纳米薄膜 .实验结果表明 : 当 SiO2添加量较高时 , TiO2/SiO2复合纳米薄膜的光催化活性明显降低 ;当 SiO2添加量较低时 ,TiO2/SiO2复合薄膜的光催化活性无明显变化 .在 TiO2薄膜中添加 SiO2,可以抑制薄膜中 TiO2晶粒的长大 ,同时薄膜表面的羟基含量增加 , 水在复合薄膜表面的润湿角下降 , 亲水能力增强 .当 SiO2含量为 10％－ 20％（摩尔分数）时获得了润湿角为 0°的超亲水性薄膜 .     

SiO2 溶胶及其静电自组装薄膜的制备

Silica sols were prepared by hydrolysis of Si（OC2H5）4（TEOS）using HCl,NH3·H2O,HCl/NH3·H2O as catalyzers,and the different granularities of SiO2 sols which catalyzed by HCl first and then NH3·H2O have the same terminal pH value were prepared. The silica colloidal particles were investigated with Transmission Electron Microscope（TEM）. The results showed sol catalyzed by HCl possesses very little particle,catalyzed by NH3·H2O has particle configuration,catalyzed by HCl/NH3·H2O possesses consecutive configuration. Poly（diallyldimethylammonium chloride）（PDDA）and SiO2 nanoparticulate complex thin films were prepared by electrostatic self-assembly multiplayer（ESAM）method. After assembling films,thin films surface conformation was observed with Electron Microscope and their transmittance was tested with 721 Spectrophotometer. The results showed that the silica sol catalyzed with HCl is not good for the fabrication of ESAM films and the silica sol catalyzed with HCl first and then NH3·H2O or by NH3·H2O only are very suitable for ESAM film fabrication. TEM data indicate that the microstructure of PDDA/ SiO2 prepared from silica sol catalyzed with HCl first and then NH3·H2O is consecutive and that the microstructure of PDDA/ SiO2 prepared from silica sol catalyzed by NH3·H2O only is particulate-parking like. The dependence of the transmittance of assembled films on the bilayer number of the films and the anti-scratching properties of the films were investigated. The results show that PDDA/ SiO2 films prepared from silica sol catalyzed by NH3·H2O only possess higher transmittance but lower anti-scratching properties. The effect of granularity of sols on optical performances of the thin films was studied,results showed the less the granularity of sol,the better the optical performances. For the sake of improving the light transmittance of films,we can reduce the granularity of sol,but it may play down its mechanical damage resist intensity.     

溶胶法制备的二氧化硅与二氧化钛复合薄膜的性能

在室温下, 采用溶胶法在玻璃基板上制备了厚度约为100 nm的均匀、透明的纳米SiO2-TiO2复合薄膜.研究了不同温度处理后薄膜的超亲水性、光催化能力等光致活性.通过XPS对薄膜表面及近表面元素的化学态的研究发现, Ti在表面及近表面不仅以Ti4＋形式存在, 也存在少量Ti3＋.紫外光照射后, 部分Ti4＋ 转变成了Ti3＋. XRD研究表明, 该薄膜中的TiO2主要以锐钛矿形式存在, 而且其晶粒大小为14～20 nm.用AFM研究了SiO2-TiO2薄膜的表面形貌及不同的温度处理对TiO2颗粒大小的影响.     

Spectroscopic and electrical properties of SiO2 films prepared by simple and cost effective sol-gel process

Amorphous SiO2 thin films were prepared on glass and silicon substrates by cost effective sol-gel method. Tetra ethyl ortho silicate (TEOS) was used as the precursor material, ethanol as solvent and concentrated HCl as a catalyst. The films were characterized at different annealing temperatures. The optical transmittance was slightly increased with increase of annealing temperature. The refractive index was found to be 1.484 at 550 nm. The formation of SiO2 film was analyzed from FT-IR spectra. The MOS capacitors were designed using silicon (100) substrates. The current-voltage (I-V), capacitance-voltage (C-V) and dissipation-voltage (D-V) measurements were taken for all the annealed films deposited on Si (100). The variation of current density, resistivity and dielectric constant of SiO2 films with different annealing temperatures was investigated and discussed for its usage in applications like MOS capacitor. The results revealed the decrease of dielectric constant and increase of resistivity of SiO2 films with increasing annealing temperature.     

Ferroelectric and Pyroelectric Properties of Highly (111)-oriented Nanocrystalline Pb(Zr0:95Ti0:05)O3 Thin Films

"Lead zirconate titanate Pb(Zr0:95Ti0:05)O3 (PZT95/5) antiferroelectric thin films with 300 nm thickness were grown on Pt/Ti/SiO2/Si substrates by a sol-gel method with rapid thermal annealing processing. The X-ray diffraction results showed that the highly (111)-oriented pervoskite PZT95/5 thin films were grown on Pt/Ti/SiO2/Si substrates when annealed at 600-700 oC. Electrical measurements were conducted on PZT95/5 films in metal-ferroelectric-metal capacitor configuration. The PZT95/5 thin films annealed at 600-700 oC showed well-saturated hysteresis loops at an applied voltage of 20 V. At 1 kHz, the dielectric constant and dielectric loss of the films were 519 and 0.028, 677 and 0.029, 987 and 0.025, respectively for the thin films annealed at 600, 650, and 700 oC. The average remanent polarization (Pr) and the coercive electric field (Ec) obtained from the P-E hysteresis loops, were 19.1 1C/cm2 and 135.6 kV/cm, 29.31C/cm2 and 88.57 kV/cm, 45.3 1C/cm2 and 102.1 kV/cm, respectively for PZT95/5 thin films annealed at 600, 650 and 700 oC for 10 min in the oxygen atmosphere. This showed a good ferroelectricity of the prepared PZT95/5 films on Pt/Ti/SiO2/Si substrates by the simple sol-gel processing. The pyroelectric coeocient (p) of antiferroelectric PZT95/5 films was measured by a dynamic technique. At room temperature, the p values of the antiferroelectric PZT95/5 films at 1 kHz were 274, 238, and 212 1C/m2K."     

Studies of tetracene- and pentacene-based organic thin-film transistors fabricated by the neutral cluster beam deposition method

The neutral cluster beam deposition (NCBD) method has been applied to produce and characterize organic thin-film transistors (OTFTs) based upon tetracene and pentacene molecules as active layers. Organic thin films were prepared by the NCBD method on hexamethyldisilazane (HMDS)-untreated and -pretreated silicon dioxide (SiO2) substrates at room temperature. The surface morphology and structures for the tetracene and pentacene thin films were examined by atomic force microscopy (AFM) and X-ray diffraction (XRD). The measurements demonstrate that the weakly bound and highly directional neutral cluster beams are efficient in producing high-quality single-crystalline thin films with uniform, smooth surfaces and that SiO2 surface treatment with HMDS enhances the crystallinity of the pentacene thin-film phase. Tetracene- and pentacene-based OTFTs with the top-contact structure showed typical source-drain current modulation behavior with different gate voltages. Device parameters such as hole carrier mobility, current on/off ratio, threshold voltage, and subthreshold slope have been derived from the current-voltage characteristics together with the effects of surface treatment with HMDS. In particular, the high field-effect room-temperature mobilities for the HMDS-untreated OTFTs are found to be comparable to the most widely reported values for the respective untreated tetracene and pentacene thin-film transistors. The device performance strongly correlates with the surface morphology, and the structural properties of the organic thin films are discussed.     

Sol-Gel Coatings on 316L Steel for Clinical Applications

SiO2 and SiO2-CaO-P2O5 coatings have been prepared by dipping electropolished stainless steel 316L samples and microscope glass slides in three different sol-gel solutions. Multilayered dense SiO2 coatings, and thick silica films obtained from equimolar contents of TEOS and MTES were used. The latter were able to strongly reduce both the corrosion attack on the steel and the iron diffusion to the sample surface. SiO2-CaO-P2O5 coatings were also obtained and applied onto the silica films, in order to provide a bioactive external surface for contact with living tissue. In-vitro evaluation of these coatings and films is discussed.     

Complex Langmuir-Blodgett films of SiO2 and ZnO nanoparticles with advantageous optical and photocatalytical properties

Multifunctional Langmuir-Blodgett (LB) films were fabricated on the surface of glass substrates using sol-gel derived ZnO and SiO2 particles. ZnO particles of 6 and 110 nm diameter were synthesized according to the methods of Meulenkamp and Seelig et al. (Meulenkamp, E. A. J. Phys. Chem. B 1998, 102, 5566; Seelig, E. W.; Tang, B.; Yamilov, A.; Cao, H.; Chang, R. P. H. Mater. Chem. Phys. 2003, 80, 257). Silica particles of 37 and 96 nm were prepared by the Stober method (Stober, W.; Fink, A.; Bohn, E. J. Colloid Interface Sci. 1968, 26, 62). Alternate deposition of monoparticulate Langmuir films of SiO2 and ZnO nanoparticles provided complex (six- and nine-layered) LB films with both antireflective and photocatalytic properties. The LB films were investigated with scanning electron microscopy (morphology and structure) and UV-vis spectroscopy (optical properties and stability). The photocatalytic activity was measured by immersing the UV-irradiated films into an aqueous solution of Methyl Orange and following the photodegradation of the dye by optical spectroscopy. Adding ZnO particles to the silica films slightly lowered the antireflection property but ensured strong photocatalytic activity. Both the photocatalytic activity and antireflection properties were proved to be sensitive to the sequence of the silica and ZnO layers, with optimum properties in the case of nine-layered films with a repeated (SiO2-ZnO-ZnO) structure.     

Effects of ionic surfactant adsorption on single-walled carbon nanotube thin film devices in aqueous solutions

Field-effect transistors were fabricated using high-density single-walled carbon nanotube (SWNT) thin films directly grown on suitable substrates. Such approach eliminated the variations of device behaviors in individual SWNT devices by utilizing a large number of SWNTs in each device. We have found that the behaviors of such devices are closely related to the surface charge densities around SWNTs in aqueous solutions. Adsorption of ionic surfactants on the surface could significantly modulate the device characteristics, which could be detected by measuring the conductance of the devices. The devices could be tuned to be sensitive to either anionic or cationic surfactants by tailoring the surface properties of SiO(2) substrates around SWNTs. This effect could be potentially used to design chemical and biological sensors.     

纳米TiO2复合薄膜光催化降解甲基橙的研究

本文通过Sol-Gel工艺在载玻片表面、多孔陶瓷表面及玻璃纤维表面制得了均匀透明的纳米TiO₂复合薄膜,以甲基橙为研究对象,紫外灯为光源,研究了甲基橙初始浓度、光照时间、催化剂载体比表面、初始溶液的pH值对甲基橙降解率的影响,并比较了半导体耦合薄膜的光催化降解能力.研究结果表明:SnO₂-TiO₂复合膜相对于其它耦合膜及金属(La)掺杂膜有较高的降解率.     

SnO2 thin films prepared by dip-coating from microwave synthesized colloidal suspensions

Tin(IV) oxide thin films have been prepared by dip-coating. The suspensions used for these depositions have been synthesized by microwave-induced thermohydrolysis of tin tetrachloride aqueous solutions in the presence of hydrochloric acid. Single or multiple depositions were tested, on glass substrates as well as on pure SiO2. The obtained thin films were characterized by optical microscopy, interferometric roughness measurements (Micromap), scanning electron microscopy, secondary ion mass spectroscopy, and scanning tunneling microscopy.     

C(膜)/Si(SiO2 )(纳米微粒)/C(膜)热处理的形态及结构分析

用直流辉光溅射+真空镀膜法制备了一种新型结构的硅基纳米发光材料- C(膜)/Si(SiO2)(纳米微粒)/C(膜)夹层膜,并对其进行了退火处理.用TEM、 SEM、 XRD和XPS对其进行了形态结构分析.TEM观察表明: Si(SiO2)纳米微粒基本呈球形,粒径在30 nm左右.SEM观察表明: 夹层膜样品总厚度约为50 μm,膜表面比较平整、致密.400℃退火后,样品表面变得凹凸不平,出现孔状结构; 650℃退火后,样品表面最平整、致密且颗粒均匀.XRD分析表明:制备出的夹层膜主要由SiO2和Si组成,在C原子的还原作用和氧气的氧化作用的共同作用下, SiO2和Si的含量随加热温度的升高而呈现交替变化: 400℃时, C的还原作用占主导地位, SiO2几乎全部被还原成了Si,此时Si含量最高; 400～650℃时,氧化作用占主导地位, Si又被氧化成SiO2, Si含量降低, SiO2含量逐渐上升,在650℃达到最高.XPS分析表明: 在加热过程中, C原子逐渐扩散进入Si(SiO2)微粒层,在650℃与Si反应生成了新的SiC.     

钛金属有机物热解制备TiO2-SiO2复合膜及其光催化活性研究

混有一定量SiO_2溶胶的钛金属有机化合物膜液通过旋液成膜法制备前驱物膜 ，经热解得到TiO_2-SiO_2复合膜。于610 ℃焙烧15min所得复合膜(Ti:Si=9:1)经 SEM，XRD，UV-vis和XPS研究表明，膜面由30 nm * 200 nm大小的晶体粒子组成， 结构致密，膜厚约200 nm，其可见光透过率为玻璃基质的80%，膜表面Ti~(3+)OH~- 的比值为1.06。对不同SiO_2含量的膜液凝胶进行DSC分析显示，少量的SiO_2就能 显著提高TiO_2锐钛矿型晶相的形成温度。膜的光催化活性研究表明一定量的Fe~ (3+)有利于提高膜的光催化活性，但是如果以氯化物的形式加入则对光催化反应不 利，铬的氯化物同样如此。另外，在钛金属有机物热解制备TiO_2-SiO_2复合膜中 ，溶胶SiO_2不利于光催化反应，但是它可以改善膜的耐磨性。     

Aldehyde-terminated amorphous carbon substrates for the fabrication of biomolecule arrays

Amorphous carbon thin films are easily deposited at room temperature, readily functionalized with alkene-containing molecules through a UV photochemical reaction, and provide a robust surface capable of supporting chemical and biomolecule array fabrication. Aldehyde-terminated amorphous carbon substrates were fabricated via the attachment of a 2-(10-undecen-1-yl)-1,3-dioxolane molecule. The surfaces were then deprotected in 1.5 M HCl to yield an aldehyde-terminated surface that is readily reactive with amine containing molecules. An array of amine-modified oligonucleotides was prepared on aldehyde-terminated surfaces prepared on both amorphous carbon and on gold self-assembled monolayers, and the fluorescence background, feature signal-to-noise ratio, and hybridization densities were compared. The aldehyde-terminated amorphous carbon substrates offer inherently lower background fluorescence intensity and a greater number of hybridization-accessible sites.     

Recent advances in characterization of CaCu3Ti4O12 thin films by spectroscopic ellipsometric metrology

CaCu3Ti4O12 (CCTO) thin films were successfully grown on LaAlO3(100) and Pt/TiO2/SiO2/Si(100) substrates by a novel MOCVD approach. Epitaxial CCTO(001) thin films have been obtained on LaAlO3(100) substrates, while polycrystalline CCTO films have been grown on Pt/TiO2/SiO2/Si(100) substrates. Surface morphology and grain size of the different nanostructured deposited films were examined by AFM, and spectroscopic ellipsometry has been used to investigate the electronic part of the dielectric constant (epsilon2). Looking at the epsilon2 curves, it can be seen that by increasing the film structural order, a greater dielectric response has been obtained. The measured dielectric properties accounted for the ratio between grain volumes and grain boundary areas, which is very different in the different structured films.     

SiO_2/PE/Bi_2S_3核壳结构纳米颗粒的合成与性能(英文)

以多层电解质作为微型反应器,制备了SiO2/Polyelectrolyte(PE)/Bi2S3核壳纳米粒子。XRD结果表明Bi2S3颗粒属于正交晶系。由透射电镜和场发射扫描电镜照片可知,在直径为640nm左右的SiO2表面覆盖了厚度35nm的Bi2S3壳层。红外光谱分析结果表明硅烷网络在结构上发生了变化(SiO2表面的硅烷醇键沉积在Bi2S3的表面)。SiO2核和SiO2/PE/Bi2S3的紫外-可见吸收光谱显示在900nm存在典型吸收边。     

无机盐溶液源溶胶-凝胶法制备锶铋钽铁电陶瓷薄膜过程研究

采用可溶性无机盐Sr(NO₃)₂,Bi(NO₃)₃及HTaF6为原料,以柠檬酸、乙二醇及乙二胺四乙酸(EDTA)为络合剂,利用溶胶-凝胶旋转涂覆工艺,分别在Al₂O₃和Pt/Ti/SiO₂/Si的衬底上制备了SrBi₂Ta₂O₉(SBT)铁电陶瓷薄膜.采用SEM,XRD及FTIR等微观分析手段,对制备的SBT溶胶与薄膜过程机理进行了实验研究.结果表明,由无机盐溶液原料络合合成SBT溶胶是此方法制膜的关键,其中络合剂的种类、用量和pH值的控制等是重要的影响因素.制备了相组成均一、薄膜表面致密、均匀、无开裂、晶粒尺寸为150nm的多晶膜,获得了剩余极化(2P_r)与矫顽电场强度(2E_c)分别为9.6μC/cm²与76kV/cm铁电性能较好的薄膜材料.