Investigation of nucleation and grain growth in 2-dimensional systems by using generalized Monte Carlo simulations

In this study, nucleation and grain growth was studied by using 2-dimensional generalized Monte Carlo simulations and experiments. As an attempt to improve the JMAK model, we proposed a new differential equation to be able to model nucleation and growth phenomena using nonextensive thermostatistics. One of the reasons that we would like to perform generalized Monte Carlo simulations in studying of nucleation and grain growth phenomena is that the generalized Monte Carlo algorithm was shown to be more effective than the standard Monte Carlo algorithm and also than the standard Molecular Dynamic algorithm in locating the minimum energy configuration. Therefore, for a given temperature, the fact that a configuration of the system with lower energy could be obtained by using the generalized Monte Carlo simulation means that a different textural configuration of grain growth could be also expected. In this respect, it is possible to say that the nonextensive statistics might be an appropriate tool in studying of nucleation and growth phenomena.     

Cavitation in thin liquid layer: A review

This review tries to cover as many research fields and literatures associated with cavitation in thin liquid layer as possible. The intent was to summarize (i) list all the research fields related to cavitation in thin liquid layer that can be collected, (ii) advances in the investigation of cavitation in thin liquid layer, and (iii) draw attention to the relatively macroscopic cavitation behavior in thin liquid layer.     

Study of the influence of thin layer loading on the propagation of Lamb waves using perturbation method

I.IntroductionSincethepublicationoftheclassicalpaper"Onthewavesinanelasticplate"byH.Lambin1917l1l,theterm"LaInbwave"hasbeenusedtorefertoanelasticdisturbancepropagatinginasolidplatewithfreeboundaries.Lambwavesarewidelyusedintheapplicationsofthedefectinspectionofthinwa.lledmaterial[2'8].InrecelltyearsLambwaveshavebeenwide1yusedinthefabricationofsensors.LamInwavesensorsdetectthechangesofenvironmentbymeasuringthechangeofphasevelocityofLambwaves.IncomparisonwithbuIkwavesandSAW's,Lambwavsprovi…     

Effect of anodization time on photoluminescence of porous thin SiC layer grown onto silicon

A porous SiC (PSC) layer was fabricated by anodization of a 1.6 μm thin SiC layer deposited onto p-type Si(1 0 0) substrate by pulsed laser deposition (PLD), using a hot-pressed 6H-SiC(p) as sputtered target. p-Type PSC layers were fabricated by anodization in HF/ethylene glycol electrolyte (1:1 by vol.) at different etching times. The properties of the PSC layer formed by this method were investigated by X-ray diffraction (XRD), secondary ion mass spectrometry (SIMS), scanning electron microscopy (SEM) and photoluminescence (PL). The results show, that the growth layer was crystalline and PL spectra exhibit blue band emission centered at 2.95 eV. In addition, the results indicate clearly an increase in PL intensity by ten times of magnitude compared to that exhibited by the unetched sample.     

拉曼光谱法结合薄层层析分析红酵母色素

利用薄层层析色谱法分离红酵母色素,结果显示,红酵母细胞能合成至少三种色素,即β-胡萝卜素、红酵母红素、圆酵母红素;采集三种色素的拉曼光谱,光谱数据经过背景扣除、基线校正、三点平滑等方法预处理,统计不同色素的平均光谱,结果表明三种色素的CC拉曼位移不同,并且β-胡萝卜素的拉曼位移最多,红酵母红素和圆酵母红素的含量较多;定量分析色素特征峰高比值,各色素峰高比值差异不大,峰高比值能用作参数,为深入研究活体细胞内色素的相对含量提供参考。以上结果表明,拉曼光谱法结合薄层层析能够分析红酵母色素,可以提供红酵母色素的丰富信息,是研究色素的有效方法。     

Atomic layer deposition of Cr2O3 thin films: Effect of crystallization on growth and properties

Atomic layer deposition of Cr₂O₃ thin films from CrO₂Cl₂ and CH₃OH on amorphous SiO₂ and crystalline Si(1 0 0) and -Al₂O₃() substrates was investigated, and properties of the films were ascertained. Self-limited growth with a rate of 0.05–0.1 nm/cycle was obtained at substrate temperatures of 330–420 °C. In this temperature range epitaxial eskolaite was formed on the -Al₂O₃() substrates. The predominant crystallographic orientation in the epitaxial films depended, however, on the growth temperature and film thickness. Sufficiently thick films grown on the SiO₂ and Si(1 0 0) substrates contained also the eskolaite phase, but thinner films deposited at 330–375 °C on these substrates were amorphous. The growth rate data of films with different phase composition allowed a conclusion that the crystalline phase grew markedly faster than the amorphous phase did. The amorphous, polycrystalline and epitaxial films had densities of 4.9, 5.1 and 5.1–5.3 g/cm³, respectively.     

交变磁场下超导薄圆筒的交流损耗研究

通过数值模拟方法研究了超导薄圆筒在交变磁场下的交流损耗特性.这种超导体的几何模型为一个通有与外加磁场同相位的交流电且厚度可忽略的圆筒.基于Bean临界态模型,通过数值方法得到了交流损耗Q,与实验结果符合得很好.此值模拟方法仅适用于超导薄圆筒,对涂层超导体具有一定的应用价值.     

Improvement of electrical characteristics of InGaZnO thin film transistors by using HMDSO/O2 plasma deposited SiOCH buffer layer

In this work, we present the performance improved InGaZnO thin film transistors by inserting low temperature processed 10 nm thick SiOCH buffer layers between SiN_x insulator and InGaZnO channel layer. The influences of oxygen flow rate during the deposition of SiOCH buffer layer have been intensively investigated. Basing on the analysis of hall effect measurement and Fourier transform infrared spectrum, the SiOCH buffer layer can effectively increase the carrier concentration of the channel layer by the hydrogen doping due to re-sputtering and diffusion effect. The InGaZnO thin film transistor with buffer layer exhibits an enhanced performance with mobility of 13.09 cm²/vs, threshold voltage of −0.55 V and I_on/I_off over 10⁶.     

On the theory of transient nucleation at the intermediate stage of phase transitions

The evolution of a system of growing aggregates in a macroscopically homogeneous medium with account of both the reduction in metastability and the continuing initiation of new nuclei is studied. The corresponding integro-differential model describing the intermediate stage of phase transitions is solved analytically for arbitrary nucleation kinetics and growth rates of nuclei. An exact solution of the Fokker–Planck equation is found with allowance for the diffusivity along the axis of nucleus radii. In limiting cases of purely kinetic and mixed kinetic-diffusion rates of crystal growth for a special form of diffusivity, the obtained solutions transform to earlier known expressions.     

等离子增强原子层沉积低温生长AlN薄膜

采用等离子增强原子层沉积技术在单晶硅基体上成功制备了AlN晶态薄膜, 利用椭圆偏振仪、原子力显微镜、小角掠射X射线衍射仪、高分辨透射电子显微镜、 X射线光电子能谱仪对样品的生长速率、表面形貌、晶体结构、薄膜成分进行了表征和分析, 结果表明, 采用等离子增强原子层沉积制备AlN晶态薄膜的最低温度为200 ℃, 薄膜表面平整光滑, 具有六方纤锌矿结构与(100)择优取向, Al_2p与N_1S的特征峰分别为74.1 eV与397.0 eV, 薄膜中Al元素与N元素以Al-N键相结合, 且成分均匀性良好. 关键词： 氮化铝 等离子增强原子层沉积 低温生长 晶态薄膜     

A nonextensive maximum entropy approach to a family of nonlinear reaction–diffusion equations

We consider a monoparametric family of reaction–diffusion equations endowed with both a nonlinear diffusion term and a nonlinear reaction one that possess exact time-dependent particular solutions of the Tsallis’ maximum entropy (MaxEnt) form. The evolution of these solutions is governed by a system of three coupled nonlinear ordinary differential equations that are integrated numerically. A simple population dynamics interpretation provides a qualitative understanding of the behaviour of the q-MaxEnt solutions. When the reaction term vanishes the time-dependent distributions studied here reduce to the previously known Tsallis’ MaxEnt solutions for the nonlinear diffusion equation.     

Transmission spectroscopy in a thin vapour layer and its derivative properties

A novel method of high-resolution spectroscopy of gases is proposed. The method is based on observing the optical behaviour of the vapour layer when the particles cross the light beam or collide with the cell walls. The atomic motion and electronic quenching on gas-solid interfaces are explored by numerical analysis. The periodicity of peak values of transmission spectra and its derivative spectra demonstrates a sub-Doppler structure corresponding to the resonant transitions.     

Fast and accurate point-based method for time-harmonic maxwell problems involving thin layer materials

We present a high-order hybrid boundary-finite elements method well-suited for solving time-harmonic electromagnetic scattering problems. Actually, this method is specially devoted to perfect electric conductors coated with a thin layer material. On such class of problems this method is shown to be fast and accurate. The fast feature is due to the joint use of finite elements of anisotropic order fitting the layer thickness, and of a point-based boundary element method on the skin. The accuracy is ensured, first by a discretization scheme satisfying the H_curl–H_div conformity required by the integro-differential equation and, secondly, by an adaptive technique of integration based on the detection of some local potential trouble on the geometry such as sharp edges or high dilatation of the elements. This algorithm does not need further information from the user and does not deteriorate the computation time. Numerical examples confirm the efficiency of this approach.     

A computer simulation of nucleation and growth of thin films

~~A computer simulation of nucleation and growth of thin films~~     

Electrodeposition and growth mechanism of SnSe thin films

Tin selenide (SnSe) thin films were electrochemically deposited onto Au(1 1 1) substrates from an aqueous solution containing SnCl₂, Na₂SeO₃, and EDTA at room temperature (25 °C). The electrochemical behaviors and the codeposition potentials of Sn and Se were explored by cyclic voltammetry. X-ray diffraction (XRD), scanning electron microscopy (SEM), energy dispersive spectroscopy (EDS), and UV-vis absorption spectroscopy were employed to characterize the thin films. When the electrodeposition potential increased, the Se content in the films decreased. It was found that the stoichiometric SnSe thin films could be obtained at −0.50 V. The as-deposited films were crystallized in the preferential orientation along the (1 1 1) plane. The morphologies of SnSe films could be changed from spherical grains to platelet-like particles as the deposition potential increases. The SEM investigations show that the film growth proceeds via nucleation, growth of film layer and formation of needle-like particles on the overlayer of the film. The optical absorption study showed the film has direct transition with band gap energy of 1.3 eV.     

Deposition of copper iodide thin films by chemical bath deposition (CBD) and successive ionic layer adsorption and reaction (SILAR) methods

In this paper, we report structural, morphological, electrical studies of copper iodide (CuI) thin films deposited onto glass substrates by chemical bath deposition (CBD) and successive ionic layer adsorption and reaction (SILAR) methods. CuI thin films were characterized for their structural, morphological and wettability studies by means of X-ray diffraction (XRD), FT-Raman spectroscopy, scanning electron microscopy (SEM), optical absorption, and contact angle measurement methods. Thickness of thin films was 1 ± 0.1 μm measured by gravimetric weight difference method. The CuI thin films were nanocrystalline, with average crystal size of ～60 nm. The FT-IR study confirmed the formation of CuI on the substrate surface. SEM images revealed the compact and cube like structure for CuI thin films deposited by CBD and SILAR methods, respectively. Optical absorption study revealed optical energy gaps as 2.3 and 3.0 eV for CBD and SILAR methods, respectively. Wettability study indicated that CuI thin films deposited by SILAR method are more hydrophobic as compared to CBD method.     

Effect of MgO buffer layer thickness on the electrical properties of MgZnO thin film transistors fabricated by plasma assisted molecular beam epitaxy

We report the fabrication and electrical characteristics of thin film transistors based on MgZnO thin films with different thicknesses of MgO buffer layer. The MgZnO thin films with MgO buffer layers were grown on SiO₂/p-Si substrates by plasma assisted molecular beam epitaxy. The effects of the buffer layer thickness on the structural properties of MgZnO films are investigated by X-ray diffraction, and the results show that the crystal quality of the MgZnO film is enhanced with 4 nm MgO buffer layer. The MgZnO TFT with 4 nm MgO buffer layer exhibits an n-type enhancement mode characteristics with a field effect mobility of 1.85 cm²/V s, a threshold voltage of 27.6 V and an on/off ratio of above 10⁶.     

Ultrasonic cavitation in thin liquid layers

The generation of ultrasonic cavitation in a thin liquid layer trapped between a large radiating surface and a hard reflector and bounded laterally by a gas–liquid interface is investigated. The theoretical analysis predicts that a large amplification of the acoustical pressure is obtained with this configuration. Experiments are conducted by driving the layer with horn-type transducers having a large emitting surface. Ultrasonic cavitation is obtained in a broad frequency range at low input intensity due to the amplification effect. Erosion tests on metallic foils demonstrate the existence of a region of intense cavitation activity which can be localised by controlling the input intensity.