Stochastic Resonance in Quantum-Well Semiconductor Lasers

The quantum well （QW） semiconductor lasers have become main optical sources for optical fibre communication systems because of their higher modulation speed, broader modulation bandwidth and better temperature characteristics. In order to improve the quality of direct-modulation by means of the stochastic resonance （SR） mechanism in QW semiconductor lasers, we investigate the behaviour of the SR in dlrect-modulated QW semiconductor laser systems. Considering the cross-correlated carrier noise and photon noise, we calculate the power spectrum of the photon density and the signal-to-noise ratio （SNR） of the direct-modulated laser system by using the linear approximation method. The results indicate that the SR always appears in the dependence of the SNR on the bias current density, and is strongly affected by the cross-correlation coefficient of the carrier and photon noises, the frequency of modulation signal, and the photon lifetime in the laser cavity.     

Resonant Optical Absorption in Semiconductor Quantum Wells

We have calculated the intraband photon absorption coefficients of hot two-dimensional electrons interacting with polar-optical phonon modes in quantum wells. The dependence of the photon absorption coefficients on the photon wavelength λ is obtained both by using the quantum mechanical theory and by the balance-equation theory. It is found that the photon absorption spectrum displays a local resonant maximum, corresponding to LO energy, and the absorption peak vanishes with increasing the electronic temperature.     

Excitonic Absorption of Semiconductor Nanorings under Terahertz Fields

The optical absorption of GaAs nanorings （NRs） under adc electric field and a terahertz （THz） ac electric field applied in the plane containing the NRs is investigated theoretically. The NRs may enclose some magnetic flux in the presence of a magnetic field perpendicular to the NRs plane. Numerical calculation shows that the excitonic effects are essential to correctly describe the optical absorption in NRs. The applied lateral THz electric field, as well as the dc field leads to reduction, broadening and splitting of the exciton peak. In contrast to the presence of a dc field, significant optical absorption peak arises below the zero-field bandgap in the presence ofa THz electric field at a certain frequency. The optical absorption spectrum depends evidently on the frequency and amplitude of the applied THz field and on the magnetic flux threading the NRs. This promises potential applications of NRs for magneto-optical and THz electro-optical sensing.     

Electron–Nuclear Spin Dynamics in Semiconductor QDs

This work presents an overview of investigations of the nuclear spin dynamics in nanostructures with negatively charged InGaAs/GaAs quantum dots characterized by strong quadrupole splitting of nuclear spin sublevels. The main method of the investigations is the experimental measurements and the theoretical analysis of the photoluminescence polarization as a function of the transverse magnetic field (effect Hanle). The dependence of the Hanle curve profile on the temporal protocol of optical excitation is examined. Experimental data are analyzed using an original approach based on separate consideration of behavior of the longitudinal and transverse components of the nuclear polarization. The rise and decay times of each component of the nuclear polarization and their dependence on transverse magnetic field strength are determined. To study the role of the Knight field in the dynamic of nuclear polarization, a weak additional magnetic field parallel to the optical axis is used. We have found that, only taking into account the nuclear spin fluctuations, we can accurately describe the measured Hanle curves and evaluate the parameters of the electron–nuclear spin system in the studied quantum dots. A new effect of the resonant optical pumping of nuclear spin polarization in an ensemble of the singly charged (In,Ga)As/GaAs quantum dots subjected to a transverse magnetic field is discussed. Nuclear spin resonances for all isotopes in the quantum dots are detected in that way. In particular, transitions between the states split off from the ±1/2 doublets by the nuclear quadrupole interaction are identified.     

Metallization of Cu3N Semiconductor under High Pressure

Using the four-probe method, we investigate the electrical conductivity of Cu3N under high pressure with the diamond anvil cell. Cu3N is a semiconductor at ambient pressure showing a band gap about l eV. With the application of quasi-hydrostatic pressures, its resistance decreases dramatically over five orders of magnitude from ambient to 9 GPa. The compound became a metal at pressure about 5.5 GPa, which is in well agreement with the recent first principle calculation.     

Enhanced Spin Injection into ZnO Semiconductor Measured by Magnetoresistance

We prepare 2× （NiFe/CoZnO）/ZnO/（CoZnO/Co）×2 spin valve structures used for spin injection by sputtering and photolithography. In the junctions, the free magnetic layer 2× （NiFe/CoZnO） and the fixed magnetic layer （CoZnO/Co） × 2 are used to realize the spin valve functions in the external switch magnetic field. Since the wide gap semiconductor ZnO layer is located between the two magnetic semiconductor layers CoZnO, the electrical ,spin injection from the magnetic semiconductor CoZnO into the non-magnetic semiconductor ZnO is realized. Based on the measured magnetoresistance and the Schmidt model, the spin polarization ratio in the ZnO semiconductor is deduced to be 11.7% at 90K and 7.0% at room temperature, respectively.     

A Transfer Matrix-Based Analysis of Vertical-Cavity Semiconductor Optical Amplifiers

Based on the transfer matrix method, we present a new one-dimensional steady-state model of vertical-cavity semiconductor optical amplifiers （VCSOAs）, in which the longitudinal carrier concentration distribution in the active region and the discontinuity of the refractive index inside the cavity is taken into consideration. The model is theoretically proven to be a reliable one for describing the standing wave effect in a periodic gain structure. By using this model, some optical amplification characteristics of VCSOAs are investigated.     

Dynamic Wavelength Tuning of a Fiber Ring Semiconductor Laser

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Magnetic Properties of Diluted Magnetic Semiconductor Zn1-xMnxO Nanowires

Zn1-xMnxO nanowires (x = 0.035 and 0.13) have been synthesized by the vapour phase growth at 500℃. The compositional lines scanned in the energy dispersive x-ray spectroscopy (EDX) modes exhibit the homogeneous distribution of manganese in ZnO nanowires, The magnetic property measurement results show that the magnetization changes linearly with the field at high temperature, while it changes nonlinearly at low temperature,and all of the data can be well fitted by the modified Brillouin function. The magnetization of the Zn1-xMnxO nanowires show paramagnetic the behaviour for x -- 0.035 while it exhibits the ferromagnetic behaviour for x=0.13 at 5 K, which indicate that the ferromagnetism might be related to the manganese content.     

Optical Absorption Spectra and Intraband Dynamics in Terahertz-Driven Semiconductor Superlattice

We have theoretically investigated the optical absorption spectrum and intraband dynamics by subjecting a superlattice to both a terahertz (THz)-frequency driving field and an optical pulse by using an excitonic basis.In the presence of a THz dc field, the satellite structures in the absorption spectra are presented. The satellite structure is a result from the THz nonlinear dynamics of Wannier-Stark ladder excitons. On the other hand, the coherent intraband polarization is investigated. We find that the excitonic Bloch oscillation is driven by the THz field and yields an intraband polarization that continues to oscillate at times much longer than the intraband dephasing time. The temporal evolution of the slowly varying components of the intraband polarization is dependent on the THz frequency.     

Modified Optical Properties of Semiconductor Quantum Dots by Photonic Structures

Specially designed photonic structures, such as photonic crystals, can prevent light from propagating in certain directions with specified frequencies.Such photonic stsuctures exhibit many unique features that are highly desirable for the manufacture of photonic integrated circuits.There has been great interest in controlling light-emitters via photonic structures, which can partially suppress and redirect spontaneous emission.Encapsulating an active material in a well-designed photonic structure can successively reduce the active volume.Because the dimensions of the active volume are reduced to a few micrometers, spontaneous emission control can be achieved, which can provide lasing with improved directional, modal control, and reduced noise.     

Semiconductor–metal transition in GaAs nanowires under high pressure

We investigate the structural phase transitions and electronic properties of GaAs nanowires under high pressure by using synchrotron x-ray diffraction and infrared reflectance spectroscopy methods up to 26.2 GPa at room temperature.The zinc-blende to orthorhombic phase transition was observed at around 20.0 GPa.In the same pressure range, pressureinduced metallization of GaAs nanowires was confirmed by infrared reflectance spectra.The metallization originates from the zinc-blende to orthorhombic phase transition.Decompression results demonstrated that the phase transition from zincblende to orthorhombic and the pressure-induced metallization are reversible.Compared to bulk materials, GaAs nanowires show larger bulk modulus and enhanced transition pressure due to the size effects and high surface energy.     

Magnetic and Transport Properties of Ferromagnetic Semiconductor GaDyN Thin Film

Magnetic properties and temperature dependence of electrical transport properties of rare-earth-metal Dy-doped GaN thin film are experimentally studied with a superconducting quantum interference device magnetometer and van der Pauw method. It was found that this thin nitride film has both semiconductor properties and ferromagnetism from 1OK to room temperature. The dopant-band (conducting band due to doping) electron conduction dominates the transport properties of this film at low temperatures. These results indicate that Dy-doped GaN is an n-type ferromagnetic semiconductor at room temperature.     

New Approach to Investigation of Tunable External Cavity Semiconductor Lasers

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Semiconductor saturable-absorber mirror passively Q-switched Yb：YAG microchip laser

A compact passively Q-switched Yb:YAG microchip laser is demonstrated.Featuring a semiconductor saturable-absorber mirror(SESAM),the laser yields pulses of 219 ps when the length of the microchip Yb:YAG crystal is 100 μm and the beam quality is M2< 1.3.To the best of our knowledge,pulses from the proposed laser are the shortest Q-switching pulses obtained from Yb:YAG microchip lasers currently available.     

Passively Q-Switched Nd：KLuW Laser with Semiconductor Saturable Absorber

We demonstrate a passively Q-switched Nd：KLu W laser with a semiconductor sat urable absorber mirror （SESAM） at wavelength 1070 nm. At a pump power of 1.3 W, the pulse width is measured to be about 17ns with repetition rate of lOkHz and with the average output power of 260roW. To our knowledge, this is the first demonstration of Nd：KLuW used for passively Q-switched laser with an SESAM.     

An Advanced Dynamic Model for Semiconductor Optical Amplifiers and Laser Diodes

We propose a unified time-domain dynamic model for both semiconductor optical amplifiers and laser diodes by employing a set of multi-longitudinal-mode coupled wave rate equations. A novel split-step method has been developed for the numerical solution of the equation set. To demonstrate the capabilities of the model, some calculation results for conventional and distribute feedback-type gain-clamped semiconductor optical amplifiers are presented.     

SiC-Based p^＋nn^＋ Diode for Picosecond Semiconductor Closing Switch

We study a SiC-based diode with a p^ nn^ structure for picosecond semiconductor closing switch and discuss the physical process, which underlies the operation principle of high-power closing switch based on a delayed breakdown diode. By two-dimensional mixed device-circuit simulations, we demonstrate a single device reliably operated at 4kV and at risetime 11 ps with high output dV/dt = 276kV/ns, which is in good agreement with the experimental results.     

Variations from Zn1-xCoxO Magnetic Semiconductor to Co-ZnCoO Granular Composite

We investigate the variations from as-deposited Zn1-x： Cox O magnetic semiconductors to the post-annealed Co- ZnCoO granular composite. The as-deposited Zn1-x Cox 0 magnetic semiconductor deposited under thermal nonequilibrium conditions is composed of Zn1-x. Cox O nanograins of high Co concentration. The room-temperature ferromagnetism with high magnetization and large negative magnetoresistance are found in the as-deposited samples. By annealing, the samples become of granular composite consisting of the Co metal grains and the remanent Zn1-x CoxO matrix. Although the magnetization is enhanced after annealing, the spin-dependent negative magnetoresistance disappears at room temperature. The magnetoresistance observed in the annealed samples in the high field region has no relation with the ferromagnetism, which in turn indicates that the roomtemperature ferromagnetism and large negative magnetoresistance observed in the as-deposited are the intrinsic properties of the Zn1-x Cox O magnetic semiconductor.     

Turn-on Delay of Semiconductor Lasers and Accompanying Time Evolution of Carriers

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