沉淀法制备纳米氧化铬粉体的影响因素

以Cr(NO3)3·9H2O为原料,以氨水为沉淀剂,聚乙二醇为分散剂,采用沉淀法制备了纳米Cr2O3粉体.研究了反应物浓度、分散剂用量、晶种、煅烧温度及保温时间等因素对合成纳米Cr2O3粉体晶粒度的影响,用场发射扫描电镜(FE-SEM)、X射线衍射仪(XRD)和比表面积测试仪(BET)等手段对其进行表征.结果表明:随反应物浓度(0.2～0.6 mol/L)的增加,纳米Cr2O3粉体的晶粒度增加;在反应物溶液中加入适量的分散剂及用加入1wt;的分散剂的去离子水洗涤前驱体,所得的纳米Cr2O3粉体的晶粒度减小;加入晶种有利于纳米Cr2O3粉体晶体的发育;随煅烧温度的升高及保温时间的延长,纳米Cr2O3粉体的晶粒度增加.在反应物浓度为0.4 mol/L、晶种加入量为1;、分散剂加入量为3;、煅烧温度为450 ℃及保温时间为1 h时可以得到晶粒度为20～50 nm,分散良好的纳米Cr2O3粉体.     

高分散二硫化钼复合纳米纤维的制备及表征

以二硫化钼(MoS2)粉体为原料、聚乙烯基吡咯烷酮(PVP)为表面活性剂,采用超声辅助液相剥离法制备了MoS2纳米片,利用静电纺丝技术制备了MoS2复合纳米纤维.采用紫外可见吸收光谱(UV-vis)、X射线衍射(XRD)、透射电子显微镜(TEM)、扫描电子显微镜(SEM)和拉曼光谱(Raman)表征了MoS2纳米片和复合纳米纤维的形貌、尺寸及分散性.结果表明,经超声辅助剥离制备的MoS2纳米片为单层或少层结构,其尺寸为50～100 nm.掺杂MoS2纳米片的复合纳米纤维具有光滑的表面和均匀的直径(～730 nm),MoS2纳米片在纤维内能均匀分散、无聚集,表明MoS2纳米片与PVP纤维有着良好的兼容性.     

不同分散剂制备的石墨烯纳米片/双相磷酸钙生物复合材料及其力学性能研究

以石墨烯纳米片(GNPs)为强韧相,双相磷酸钙(BCP)为基体,采用不同的分散剂,通过热压烧结制备一种力学性能优良的骨组织替代材料.主要研究不同分散剂和GNPs对复合材料的力学性能、物相组成和微观结构的影响.结果表明,添加十六烷基三甲基溴化铵(CTAB)作为分散剂时,由于表面正负电荷吸引,BCP粉体均匀包覆到GNPs的表面,可使GNPs达到较好的分散效果.当GNPs添加量为1.5wt;时,复合材料的弯曲强度和断裂韧性分别达到152 MPa和1.74 MPa·m1/2,与相同条件下制备的纯BCP陶瓷相比,分别提高了55;和76;,表明GNPs对BCP陶瓷具有明显的补强增韧的作用.     

纳米硅增强纳米纤维薄膜的制备与研究

利用纳米硅粉和聚乙烯吡咯烷酮(PVP)的乙醇混合溶液,通过静电纺丝和碳化制备了Si/C纳米纤维薄膜.通过XRD、SEM、XPS、拉伸测试和TG法对样品进行表征.结果表明,纤维直径、薄膜表面元素含量、碳化薄膜强度可以通过控制Si与PVP含量而调节;当Si与PVP的质量比为0.2时,碳化薄膜拉伸强度最高其值为(6.1±0.3)MPa,继续增加硅的含量其薄膜强度明显降低.     

三种改性方法对纳米ZnO催化剂粉体的光催化性能的影响

以SnCl4·5H2O、ZnNO3·6H2O、HCl、NaOH、FeCl3·6H2O为原料,采用共沉淀法制备Fe掺杂纳米ZnO、纳米ZnO/SnO2和Fe掺杂纳米ZnO/SnO2三种复合催化剂粉体,以降解甲基橙溶液反应为模型,研究了不同比例的ZnO/SnO2复合、Fe元素掺杂量以及SnO2复合Fe元素掺杂同时作用对纳米ZnO粉体光催化活性的影响,采用X射线衍射(XRD)测试方法对不同量Fe元素掺杂纳米ZnO粉体进行了表征.采用透射电镜对三种改性方法ZnO粉体进行表征.结果表明:随着ZnO/SnO2的物质的量比增加,ZnO/SnO2复合光催化剂的催化活性先增加,然后降低;随着Fe掺杂量的增加,纳米ZnO粉体的光催化活性先增加,然后降低.三种改性方法都能提高纳米ZnO粉体的光催化活性,其中Fe元素掺杂以及SnO2复合改性纳米ZnO粉体的光催化效果最好,物相为ZnO和SnO2,颗粒尺寸为15 ～20 nm,分散性好,比表面积为68.7m2/g.     

分散剂对CSLST微波介质陶瓷水系流延浆料稳定性的影响

分别采用聚乙烯吡咯烷酮(PVP)、聚乙烯酸(PAA)、聚丙烯酰胺为分散剂,以苯丙乳液为粘结剂,丙三醇为增塑剂,去离子水为分散介质,水系流延成型法制备添加B2O3-CuO-LiCO3(BCL)玻璃料为烧结助剂的(Ca0.9375Sr0.0625)03(Li0.5Sm0.5)07TiO3 (CSLST)微波介质陶瓷,研究了分散剂种类及含量对陶瓷粉体浆料分散稳定性以及流延膜片的影响.结果表明:当以PVP为分散剂,添加量为0.8;,调节浆料的pH=10时,浆料的分散稳定性最佳,经流延后可制备得到表面光滑,均匀无裂纹的延膜片.     

新型纳米结构氧化钇粉末的制备及表征

以聚乙二醇作分散剂、正丁醇为蒸馏脱水剂,应用均匀沉淀法,再配合共沸蒸馏工艺,制备出了平均晶粒尺寸在15nm左右的新型结构纳米氧化钇多晶粉末.应用XRD、Raman、TEM、SEM对产品进行表征.结果表明该粉体是由纳米晶Y2O3薄膜碎片堆积而成,纳米Y2O3薄膜是由纳米Y2O3晶粒在二维方向堆积形成.该粉体结构新颖,松装密度低于0.05g/cm3.     

纳米Al2O3/GdAlO3共晶陶瓷复合粉体的醇-水加热法制备与表征

为制备分散均匀的纳米尺度的共晶陶瓷复合粉体,采用Al(NO3)3·9H2O和Gd2O3作为原材料,通过醇-水加热法制备了纳米尺度的Al2O3/GdAlO3共晶成分陶瓷粉体.研究了溶液初始浓度配比和pH值等对复合粉体粒径的影响.通过SEM、TEM、FT-IR和BET N2吸附法等手段表征了前驱体颗粒大小和分散性3确定最佳的前驱体制备工艺,对前驱体进行煅烧制得Al2O3/GdAlO3复合陶瓷粉体.结果表明,前驱体粒径和分散性受制备工艺影响较大;特别是,最佳工艺制备的前驱体平均粒径20 nm,分散性良好,形貌多呈球形;1250℃煅烧后得到的Al2O3/GdAlO3共晶陶瓷粉体的晶化良好、成分均匀,粉体粒径100～200 nm.     

石墨烯/钛酸锶钡/聚偏氟乙烯复合薄膜介电性能研究

首先制备了硅烷偶联剂改性后的石墨烯和钛酸锶钡粉体,然后采用溶液混合法制备了石墨烯/钛酸锶钡/聚偏氟乙烯薄膜,并且对复合薄膜的微观结构、介电性能和热稳定性进行测定和分析.结果表明:硅烷偶联剂成功接枝到石墨烯和钛酸锶钡粉体表面,石墨烯和钛酸锶钡粉体能够较好的分散在聚偏氟乙烯基体中,石墨烯的加入可以大幅度提高材料的介电性能.在石墨烯质量分数为4.06;时,复合薄膜的介电常数达到515,介电损耗为0.6.在质量分数4.14;时发生了渗流现象,介电常数达到1500,介电损耗也达到了5左右.石墨烯的加人大幅度提升了复合材料的介电性能,并且在常用温度范围内具有良好的温度稳定性.     

纳微米复合HAp-ZrO2生物复合材料的制备与微观结构研究

本文主要对纳米氧化锆与羟基磷灰石(HAp)复合制备纳微米复合HAp-ZrO2复合材料的制备工艺及微观结构进行了初步研究.用XRD分析了原料及复合材料的相组成,用IR研究了HAp粉体的结构,发现所制备HAp纯度高,羟基稳定存在.用TEM观察了HAp粉体以及HAp与ZrO2复合粉体的形貌与颗粒大小,发现HAp粉体呈颗粒状,粒径在60～70nm,这表明用化学沉淀法可制备出纳米级的HAp粒子,但在后续过程中往往发生团聚而达到微米级;纳米ZrO2粒子加入后在HAp基体中分散均匀.SEM观察发现,纳米ZrO2粒子的加入可以起到抑制羟基磷灰石晶粒长大、改善材料微观结构的作用.     

Ionized-cluster beam epitaxial growth of GaP films on GaP and Si substrates

Epitaxial films of GaP on GaP and Si substrates are grown by the Ionized-Cluster Beam Technology. The doping of Zn and N during the growth of the film are also discussed. A p-type epitaxial film doped by Zn and N shows an absorption spectrum similar to that of a direct transition type semiconductor. P-n junction LEDs are fabricated by depositing p-type GaP on n-type substrate. The luminescence from the device was observed.     

The heteroepitaxial growth of vacuum-deposited GaP thin films on Si substrates

Heteroepitaxial GaP thin films were grown on (100) and (111)Si substrates by vacuum evaporation of the compound GaP and their structural characteristics were compared with homoepitaxial GaP films grown by the same technique on (100)GaP substrates. Nearly monocrystalline GaP thin films were deposited reproducibly on (100)Si substrates at the optimum substrate temperature of about 680–700°C and the deposition rate of 0.1 nms⁻¹. The structure of such films was comparable in quality to homoepitaxial GaP/GaP films. No monocrystalline films could be deposited on (111)Si substrates.     

CVT法生长GaP多晶

阐述了CVT(化学气相输运)法生长GaP的基本反应和输运速度,采用CVT法生长出了GaP多晶.设计了石英管的结构以制造出一个局部的低温区域,防止了GaP在管壁的生长.生长出的GaP多晶相对密度为98;,红外透过率达到30;,努普硬度为611kg/mm2.散射颗粒测试表明主要的光散射颗粒为多晶中存在的孔隙.     

合成GaP纳米晶过程的关键影响因素

本文系统研究了在有机溶剂中常压合成GaP纳米晶过程中反应温度、反应时间、反应体系的均匀性和原料的比例等关键影响因素.GaP纳米晶的产率、形貌以及平均粒度随着这些关键因素的改变有很大的不同.制备的GaP纳米晶用X射线衍射仪和透射电镜进行了表征.发现了最优化的合成工艺条件,实现了GaP纳米晶的高产率(达85;)制备,而且形貌和粒度可以根据需要进行调控.     

Ihnomogeneous Distribution of Doping Elements in Polycrystalline GaP

The distribution of Te and Zn in polycrystalline GaP ingots grown by SSD method was studied by means of the contact resistance measurements between a tungsten carbide probe and a lapped sample surface. The differencies in carrier concentrations measured in differently oriented GaP :Te crystal grains were found as high as one order of magnitude. In GaP: Zn crystals the constant Zn concentration throughout the sample was observed.     

GaP:Mg layers grown on GaN by MOCVD

We have investigated the growth of magnesium-doped GaP (GaP:Mg) layers on GaN by metalorganic chemical vapor deposition. The hole carrier concentration increased linearly from 0.8×10¹⁸ to 4.2×10¹⁸ cm⁻³ as the Bis(cyclopentadienyl) magnesium (Cp₂Mg) mole flow rate increased from 1.2×10⁻⁷ to 3.6×10⁻⁷ mol/min. However, the hole carrier concentration decreased when the CP₂Mg mole flow rate was further increased. The double crystal X-ray diffraction (DCXRD) rocking curves showed that the GaP:Mg layers were single crystalline at low CP₂Mg molar flow. However, the GaP:Mg layers became polycrystalline if the CP₂Mg molar flow was too high. The decrease in hole carrier concentration at high CP₂Mg molar flow was due to crystal quality deterioration of the GaP layer, which also resulted in the low hole mobility of the GaP:Mg layer.     

Relaxation mechanism of GaP/InGaAlP/GaAs heterostructure

Transmission electron microscopy (TEM) and high-resolution electron microscopy (HREM) were carried out to investigate the structural properties of the GaP/In_0.48(Al_0.7Ga_0.3)_0.52P heterostructures grown on GaAs (0 0 1) substrates. The lattice-matched In_0.48(Al_0.7Ga_0.3)_0.52P/GaAs material system could be used as a defect-free substrate because no lattice misfit exists between the In(AlGa)P layer and the GaAs substrate. Both TEM and HREM measurements indicated that there were not only misfit dislocations, but also microtwins at the GaP/In(AlGa)P heterointerface. The mechanism of the microtwins formation is elucidated.     

Optical absorption spectra of magnesium-implanted GaP

Optical absorption spectra of magnesium-implanted GaP single crystals are measured in the photon energy range below the fundamental edge. It is found that implantation results in the formation of exponential absorption tails with tailing energies up to about 0.8 eV and absorption coefficients up to about 10⁵ cm⁻¹ at 2.0 eV. The results are compared with optical measurements on GaP single crystals implanted with other ions and with optical absorption data of amorphous GaP.     

The Thermal Etching of GaP

The thermal decomposition and etching of GaP have been investigated. The {111} GaP surfaces were treated in 10⁻²—10⁻⁵ torr vacuum, and in hydrogen and argon atmosphere, in a temperature range of 900—1300 K. Under the different experimental conditions the etched surfaces show different morphological characteristics and polar properties, from which the suitable range for thermal etching or polishing can be choosen. All experiments show that the evaporation mechanism in vacuum and argon is similar, but in hydrogen the process is different.     

Vapour-phase epitaxial growth of ZnS on GaP

Single crystal layers of ZnS about 100 μm thick were grown epitaxially on GaP substrates in an open tube system using source ZnS powder and a flowing hydrogen atmosphere. The growth rate for different substrate temperatures increases with increasing hydrogen flow rate, but the growth rate profiles resemble each other in shape. The profile shifts towards the low temperature side as the source temperature is decreased. The (111)B substrate orientation is found to be preferable to the (111)A or the (100) with respect to surface morphology and crystal quality. X-ray diffraction investigations and luminescent properties show that the (111)B grown layers are of high quality. All ZnS layers grown on GaP substrates are craked on cooling, which may be due to the thermal expansion mismatch between the layer and the substrate. Heat-treatment of the grown layer does not reduce the resistivity, but increases the photoluminescence intensity markedly. Selective vapour-phase epitaxial growth has been successfully applied resulting in crack-free ZnS layers on GaP substrates.