Luminescent properties of Bi-doped polycrystalline KAlCl4

We observed a high strength near-infrared luminescence in Bi-doped KAlCl₄ polycrystalline material. Luminescence dependence on the excitation wavelength and temperature of the sample was studied. Our experimental results allow asserting that the luminescence peaked near 1?μm belongs solely to Bi⁺ ion which isomorphically substitutes potassium in the crystal. It was also demonstrated that Bi⁺ luminescence features strongly depend on the local ion surroundings.     

Luminescent properties of erbium-activated glasses

The spectra, intensity, and duration of trivalent erbium luminescence in a large number of inorganic glasses of various compositions were investigated. The observed absorption and luminescence bands were attributed to transitions between certain^sL_j levels of the Er³⁺ ion. It is shown that in all cases the principal portion of the luminescence yield was associated with the⁴I_13/2 ⁴I_15/2 transition band with _max = 6500 cm^–1. The effects of glass composition, activator concentration, and temperature on the yield and duration of luminescence in the 6500 cm^–1 band were studied. An investigation of the effect of temperature on the structure of this band was used to construct a diagram of the crystalline splitting of the⁴I_13/2 and⁴I_15/2 levels in glass.     

掺铋离子BaO-B203玻璃的制备及其近红外发光性能的研究

采用高温熔融法制备了掺Bi离子的BaO—B203玻璃,测定了样品玻璃的近红外以及可见光区的激发、发射谱、荧光衰减曲线以及Raman光谱．在808nm波长光的激发下,在掺Bi离子的BaO—B203玻璃中发现了近红外发光现象．且存在多个发光峰．讨论了玻璃网络结构对Bi离子发光的影响,对其发光机理进行了初步的探讨．     

铋离子掺杂RO-Al2O3-SiO2玻璃近红外超宽带发光性质

研究了碱土金属氧化物对Bi离子掺杂RO-Al₂O₃-SiO₂ (R=Ca, Sr, Ba)玻璃近红外超宽带发光性质的影响. 结果表明: 玻璃样品在不同抽运源激发下都可检测到较强的近红外超宽带发光. 在808 nm激光激发下, 随着碱土金属离子半径的增加, Bi离子在1 300 nm附近的近红外发光强度显著增加, 荧光半高宽逐渐增加, 其荧光寿命最长可超过600 μms; 而在690 nm激光激发下, 随着碱土金属离子半径的增加, Bi离子在1 100 nm附近的近红外发光呈减弱趋势, 荧光半高宽逐渐增大, 半高宽最大可超过400 nm. 近红外发光可能源于两种不同形式铋的发光中心. 针对上述结果探讨了该玻璃体系中Bi离子近红外发光的机理.     

Ultrabroad infrared luminescence from Bi-doped aluminogermanate glasses

We report ultrabroad infrared luminescence from Bi-doped aluminogermanate glasses. The infrared luminescence almost covers the whole low loss wavelength region (1200-1650 nm) of silica glass fiber when excited by a diode laser at 980 nm. The full width at half maximum (FWHM) of the luminescence is 510 nm. The luminescence peak can be divided into three Gaussian peaks, and the fluorescence lifetime of the three emissions are 297 μs, 470 μs and 1725 μs, respectively. These fluorescence properties indicate that the glasses are promising material for broadband optical amplifiers.     

Luminescent properties of cadmium selenide quantum dots in fluorophosphate glasses

The optical properties of fluorophosphate glasses with CdSe quantum dots are studied. Secondary heat treatment at a temperature exceeding the glass transition temperature resulted in the formation of quantum dots with sizes of 3.7–6.2 nm. The influence of the semiconductor component concentration on the spectral-luminescent characteristics of glasses is shown. It is experimentally demonstrated that glasses with a lower CdSe concentration have a higher absolute luminescence quantum yield.     

掺Bi离子锗铌酸盐红外发光玻璃的研究

用高温熔融法制备了Bi₂O₃掺杂的(0.9-x) GeO₂-xNb₂O₅-0.1BaO (含量x为摩尔分数, x=0, 0.04, 0.07, 0.1)系列玻璃. 测定了玻璃样品的差热分析(DTA)曲线、吸收光谱、发射光谱及X射线光电子能谱(XPS). 从DTA曲线分析得到玻璃的结晶起始温度与软化温度之差(T_x-T_g)达200℃以上. 吸收光谱中可观察到位于500, 700, 808和1000 nm处的吸收峰, 并随着Nb₂O₅含量x的增加吸收边带发生红移. 在波长为808 nm激光激发下, 观察到发光中心位于1300 nm处、荧光光谱半高宽约为200 nm的宽带发光. 荧光强度随Bi₂O₃掺杂量δ的增加先增强后减弱, 当掺杂量δ达到约0.01时, 荧光强度达到最强. 随着Nb₂O₅含量x从0.04增加到0.1时, 荧光强度逐步减弱. 样品的XPS峰分别位于159.6和164.7 eV, 它们介于Bi³⁺与Bi⁵⁺的特征结合能之间, 因此Bi³⁺与Bi⁵⁺可能同时存在于玻璃基质中. 从XPS及Bi离子的发光特性推断, 宽带的荧光发射可能起因于Bi⁵⁺. 随着Nb₂O₅含量x的增加, 荧光强度逐步减弱. 分析认为, Nb₂O₅取代GeO₂后形成了NbGe缺陷, 需要低价Bi离子进行电子补偿, 因而抑制了Bi⁵⁺形成, 致使荧光强度减弱.     

Luminescent properties of Dy-doped and Dy–Tmco-doped phosphate glasses

Phosphate glasses doped with Dy³⁺ ions and co-doped with Dy³⁺–Tm³⁺ ions are successfully prepared in the present work. Their photoluminescence properties have been studied by absorption, excitation and emission spectra. A combination of blue and yellow emissions has emerged in the glasses, which allows the observation of white light when the glasses are excited by the ultraviolet light. The emission intensity of Dy³⁺ is influenced by the system ionicity, while the intensity ratio of yellow to blue emissions from Dy³⁺ can be tuned by varying both the concentration of Tm³⁺ ion and the glass matrix composition.     

The IR emitting centers in Bi-doped Mg-Al-Si oxide glasses

The properties of IR emission centers are investigated in Bi-doped Mg-Al-silicate glasses having moderate melting temperatures to be fabricated by routine melting in alumina crucibles. The quadratic concentration dependence of absorption in the visible range indicates that the considered optical centers can be Bi₂ dimers forming in a balanced chemical reaction in the glass melt. Their formation enthalpy is evaluated from their concentration variations with the synthesis temperature. The high (up to 85% at low concentrations) luminescence quantum yield and wide emission spectrum makes this glass a promising material for tunable lasers.     

Factors affecting the formation of near infrared-emitting optical centers in Bi-doped glasses

The NIR-emitting optical centers in Bi₂O₃-doped MgO–Al₂O₃–SiO₂ glass were shown to be bismuth dimers formed in a reversible endothermic redox chemical reaction. The reaction enthalpy and the effective dimer charge were determined. It was also brought out that the red (～720 nm) emission band originates from the centers that are quite different from IR-emitting ones.     

Synthesis and thermoelectric properties of Bi-doped SnSe thin films

Bi doped n-type SnSe thin films were prepared by chemical vapor deposition (CVD) and their structure and thermoelectric properties were studied. The x-ray diffraction patterns, x-ray photoelectron spectroscopy, and microscopic images show that the prepared SnSe thin films were composed of pure SnSe crystals. The Seebeck coefficients of the Bi-doped SnSe were greatly improved compared to that of undoped SnSe thin films. Specifically, Sn_0.99Bi_0.01Se thin film exhibited a Seebeck coefficient of -905.8μV·K^-1 at 600 K, much higher than 285.5 μV·K^-1 of undoped SnSe thin film. Further first-principles calculations reveal that the enhancement of the thermoelectric properties can be explained mainly by the Fermi level lifting and the carrier pockets increasing near the Fermi level due to Bi doping in the SnSe samples. Our results suggest the potentials of the Bi-doped SnSe thin films in thermoelectric applications.     

掺铋BaF2晶体的制备及其近红外发光研究

通过温度梯度法制备了Bi₂O₃:BaF₂以及BiF₃:BaF₂晶体.在Bi₂O₃:BaF₂晶体中观察到了发光峰位于961 nm,半高宽202 nm的超宽带红外发光.在BiF₃:BaF₂晶体中检测到Bi²⁺和Bi³⁺可见区的发光,但是没有观察到红外发光.通过γ射线辐照实现了BiF₃:BaF₂晶体的近红外发光, 发光峰位于1135 nm,半高宽192 nm.讨论了Bi₂O₃和BiF₃掺杂BaF₂晶体的红外发光的机理. 关键词： 近红外发光 铋 氟化钡晶体 γ辐照     

Luminescent studies of Dy ion in alkali lead tellurofluoroborate glasses

Dy³⁺-doped alkali lead tellurofluoroborate (RLTB) glasses (R=Li, Na and K) were prepared by melt quenching technique. Judd-Ofelt theory has been used to evaluate the three intensity parameters Ω₂, Ω₄ and Ω₆ from the experimental oscillator strengths. The photoluminescence spectra obtained by the excitation wavelength of 385 nm show four emission bands at 454, 483, 575 and 665 nm corresponding to the ⁴I_15/2→⁶H_15/2 and ⁴F_9/2→⁶H_J/2 (J=15/2, 13/2 and 11/2) transitions, respectively. The laser characteristic parameters like fullwidth at half maxima (FWHM), stimulated emission cross-sections (σ_e), optical gain parameters (σ_e×τ_exp) and gain bandwidth parameters (σ_e×FWHM) were determined. From the visible emission spectra, yellow to blue (Y/B) intensity ratios and chromaticity coordinates were also estimated. The lifetimes of ⁴F_9/2 metastable state were also measured and discussed.