Anisotropic vapor phase growth of Ga2O3 crystalline nanobelts

Ga₂O₃ nanobelts were synthesized by gas reaction at high temperature in the presence of oxygen in ammonia. X-ray diffraction and chemical microanalysis revealed that the nanostructures were Ga₂O₃ with the monoclinic structure. Electron microscopy study indicated the nanobelts were single crystalline with broad (0 1 0) crystallographic planes. The nanostructures grew anisotropically with the growth direction of . Statistical analysis of the anisotropic morphology of the nanobelts and electron microscopy investigation of the nanobelt tips indicated that both vapor–solid and vapor–liquid–solid mechanisms controlled the growth process. The anisotropic nature of crystallographic morphology is explained in terms of surface energy.     

Catalytic growth of In2O3 nanobelts by vapor transport

Indium oxide (In₂O₃) nanobelts have been fabricated by thermal evaporation of metallic indium powders with the assistance of Au catalysts. The as-synthesized nanobelts are single-crystalline In₂O₃ with cubic structure, and usually tens of nanometers in thickness, tens to hundreds of nanometers in width, and several hundreds of micrometers in length. The room temperature photoluminescence spectrum of In₂O₃ nanobelts features a broad emission band at 620 nm, which could be attributed to oxygen deficiencies in the as-synthesized belts. The formation of In₂O₃ nanobelts follows a catalyst-assistant vapor—liquid–-solid growth mechanism, which enables the controlled growth of individual belts on predetermined sites.     

Crystal growth of boron monophosphide using a B2H6-PH3-H2 system

Boron monosphide (BP) with (100) orientation can be epitaxially grown on Si substrates with (100) orientation by thermal decomposition of B₂H₆ and PH₃ in hydrogen. In a horizontal CVD system, the growth rate was studied as a function of gas phase composition and temperature. The growth rate is independent of the PH₃ partial pressure in the region where the PH₃ is in excess. For low values of the B₂H₆ partial pressure the growth rate is proportional to the B₂H₆ partial pressure (a linear region) with an activation energy of 1.8 eV, and for high values of the B₂H₆ partial pressure the growth rate becomes constant (a saturation region) with an acivation energy of 3.0 eV. A simple adsorption-reaction model can be proposed to explain the experimental growth kinetics. The conductivity of the as-grown layer is determined by the PH₃ partial pressure. n-type BP can be obtained for high values of the PH₃ partial pressure and p-type BP for low values. Si doping during the growth and phosphorus anti-site donors are two possibilities to explain the results.     

CBE growth of GaAs/GaAs, GaAs/Si and AlGaAs/GaAs using TEG, AsH3 and amine-alane precursors

The growth of high quality AlGaAs by CBE has been limited by the high levels of carbon and oxygen contamination. The use of alane based precursors offers a significant reduction in such contamination. We report for the first time the CBE growth of Al_xGa_1−xAs from triethylgallium, dimethylethylamine-alane and arsine, and compare with. growth from triethylgallium, trimethylamine-alane and arsine. Some preliminary results of work on the CBE growth of GaAs on silicon will also be reported.     

Single-crystal growth of the high-pressure phase B2O3 II

The technique and results of the hydrothermal single-crystal growth of the high-pressure phase B₂O₃ II are described. Transparent colorless crystals 450 × 450 × 150 μm in size have been grown under hydrothermal conditions (pressure 5 GPa, temperature range 1425–1025 K, and cooling rate ∼100 K/h).     

Study on phase diagram of Bi2O3---SiO2 system for Bridgman growth of Bi4Si3O12 single crystal

Phase relation of Bi₂O₃---SiO₂ system was evaluated experimentally from DTA and XRD measurements and its stable and metastable phase diagrams were proposed. Although BSO melts near-congruently at 1025°C in the stable phase equilibrium, its melt crystallizes to form metastable phase Bi₂SiO₅ in accordance with the metastable phase diagram while cooling. Therefore, BSO couldn't nucleate and crystallize spontaneously without crystal seed and only Bi₂SiO₅ crystallized at about 850°C with significant supercooling during Bridgman growth. BSO single crystal with 20×20×100mm³ was grown in a vertical Bridgman furnace with a BSO seed according to its phase diagram. The measuring results of scintillation properties of BSO specimen show that its decay constant is 91 ns (about 1/3 of BGO) and light output is 23% of BGO.     

GaN/GaAs(1 0 0) superlattices grown by metalorganic vapor phase epitaxy using dimethylhydrazine precursor

Superlattices of cubic gallium nitride (GaN) and gallium arsenide (GaAs) were grown on GaAs(1 0 0) substrates using metalorganic vapor phase epitaxy (MOVPE) with dimethylhydrazine (DMHy) as nitrogen source. Structures grown at low temperatures with varying layer thicknesses were characterized using high resolution X-ray diffraction and atomic force microscopy. Several growth modes of GaAs on GaN were observed: step-edge, layer-by-layer 2D, and 3D island growth. A two-temperature growth process was found to yield good crystal quality and atomically flat surfaces. The results suggest that MOVPE-grown thin GaN layers may be applicable to novel GaAs heterostructure devices.     

Material characteristics of metalorganic chemical vapor deposition of Bi2Te3 films on GaAs substrates

Metal organic chemical vapor deposition has been investigated for growth of Bi₂Te₃ films on (0 0 1) GaAs substrates using trimethylbismuth and diisopropyltelluride as metal organic sources. The results of surface morphology, electrical and thermoelectric properties as a function of growth parameters are given. The surface morphologies of Bi₂Te₃ films were strongly dependent on the deposition temperatures. Surface morphologies varied from step-flow growth mode to island coalescence structures depending on deposition temperature. In-plane carrier concentration and electrical Hall mobility were highly dependent on precursor's ratio of VI/V and deposition temperature. By optimizing growth parameters, we could clearly observe an electrically intrinsic region of the carrier concentration at the temperature higher than 240 K. The high Seebeck coefficient (of −160 μVK⁻¹) and good surface morphology of this material is promising for Bi₂Te₃-based thermoelectric thin film and two-dimensional supperlattice device applications.     

p-Type GaAs doped by diiodomethane (CI2H2) in molecular beam epitaxy, metalorganic molecular beam epitaxy, and chemical beam epitaxy

Highly p-type carbon-doped GaAs epitaxial layers were obtained using diiodomethane (CI₂H₂) as a carbon source. In the low 10¹⁹ cm⁻³ range, almost all carbon atoms are electrically activated and at 9×10¹⁹ cm⁻³, 91% are activated. The carbon incorporation efficiency in GaAs layers grown by metalorganic molecular beam epitaxy (MBE) and chemical beam epitaxy (CBE) is lower than that by MBE due to the site-blocking effect of the triethylgallium molecules. In addition, in CBE of GaAs using tris-dimethylaminoarsenic (TDMAAs), the carbon incorporation is further reduced, but it can be increased by cracking TDMAAs. Annealing studies indicate no hydrogenation effect.     

A new method for the growth of GaAs epilayer at low H2 pressure

A method of growing thin GaAs epitaxial layers has been perfected by working under low hydrogen pressure. Layers of good crystalline quality can be obtained with a growth rate of 0.1 μm/min for temperatures ranging from 520 to 750°C and pressures ranging from 25 to 600 Torr. By working under low pressure, the various substrate-layer and layer-layer impurity profiles are more abrupt than at atmospheric pressure. Autodoping can be eliminated thus permitting the use of very low resistivity tellurium doped substrates. Good quality microwave components have been realized with the layers obtained by this technique.     

Crystallization of In2O3 by vapor reaction

Crystallization of In₂O₃ occured in closed porcelain crucibles in air at 960–1200°C by vapor phase reaction of In₂O or In vapor with the oxygen diffusing into the system. The In₂O or In vapors were thermally generated from mixtures such as graphite/In₂O₃, graphite/In, In₂O₃/In and graphite/In₂O₃/In. The graphite/In₂O₃ system at a mole ratio of 30/1 and 1000°C produced yellow, transparent needle crystals with a maximum size of 0.5 X 0.5 X 8 mm and electrical resistivity of 5.5 X 10^-2 ω cm at 25°C.     

CBE growth of GaAs/GaAlAs HBTs using the new DEAlH-NMe3 precursor and all-gaseous dopants

This paper describes the first reported use of diethylaluminium hydride-trimethylamine adduct (DEAlH-NMe₃) for the growth of GaAs/GaAlAs power heterojunction bipolar transistors (HBTs) by chemical beam epitaxy (CBE). This precursor possesses a significantly higher vapour pressure than the more conventionally used triethylaluminium (TEA), and leads to much less stringent requirements for bubbler and gas-line heating, and also much-improved GaAs/GaAlAs heterojunction definition when no carrier gas is employed. The use of all-gaseous n- and p-type dopants offers significant technological advantages in CBE, and the current paper also provides the first report of the use of hydrogen sulphide for n-type doping of CBE-grown GaAlAs HBT emitter regions. In conclusion, DC and RF data obtained from the heterojunction bipolar transistors fabricated to date are described. A DC gain of 40 has already been measured and encouraging early data obtained from RF-probed devices are also presented.     

Precise structure control of GaAs/InGaP hetero-interfaces using metal organic vapor phase epitaxy and its abruptness analyzed by STEM

Fabrication of abrupt InGaP on GaAs (InGaP/GaAs) and GaAs on InGaP (GaAs/InGaP) hetero-interfaces has been difficult using metal organic vapor phase epitaxy (MOVPE) due to the exchange of P and As during the fabrication steps. Indium (In) surface segregation during InGaP growth also degrades the abruptness. Here, the MOVPE gas-switching sequence to fabricate atomically abrupt hetero-interfaces was optimized and the effects of this optimization on the hetero-interface abruptness were quantitatively evaluated using the Z-contrast method with scanning transmission electron microscopy (STEM). Results revealed that (a) in the fabrication of InGaP/GaAs hetero-interface, the GaAs top layer should be stabilized using As-source gas supply, and the excess As layer on GaAs should be terminated using an additional supply of Ga species, and (b) in the fabrication of GaAs/InGaP interface, the InGaP layer should be grown using the flow modulation method to suppress In surface segregation. In conclusion, the abruptness of hetero-interfaces of InGaP/GaAs and GaAs/InGaP was improved by using these optimized gas-switching sequences.     

Synthesis of AlN from Li3N and Al: Application to vapor phase epitaxy

We performed synthesis of AlN using Al and Li₃N. In this method, there are two problems that must be solved for obtaining single-phase AlN. One of them is suppression of Li₃AlN₂ formation and the other is precipitation of LiAl from the residual source materials during the cooling process. In the present work, we analyzed phase stability of products and found that AlN was stable at high temperatures and low Li–N/Al molar ratios. However, the products still contained LiAl and Al. Therefore, we examined the effectiveness of vapor phase epitaxy for separating AlN from the extra phase (LiAl and Al formed from residual source materials). From the experimental results, feasibility of vapor phase epitaxy was confirmed. That is, we can deposit only an AlN layer on a sapphire substrate by optimizing the growth conditions, i.e., temperature range above 1150 °C and Li–N/Al molar ratio less than 1.     

Crystal growth of ferroelastic K2Cd2(SO4)3 and the K2SO4-CdSO4 phase diagram

Crystals of congruently melting K₂Cd₂(SO₄)₃ (having the langbeinite structure with a ferroelastic transition temperature of 156°C) were grown by the Bridgman and Czochralski techniques. The former yielded colorless crystals when using oxygen under pressure; the latter yielded tan crystals of slightly smaller unit cell volume and are assumed to be oxygen deficient. The ferroelastic transition was studied by thermal expansion measurements. Reexamination of the phase diagram showed the existence of a previously unreported phase K₆Cd(SO₄)₄ which is stable only between 520°C and the melting point of about 890°C.     

Vapor phase epitaxy of pure VO2 and V1−xCrxO2

The vapor phase epitaxy of thin epilayers of VO₂ and V_1−xCrxO₂ on TiO₂ transparent substrates is described. Chemical vapor deposition occurs by reacting a (VOCL₃/CrO₂Cl₂/H₂O/H₂) mixture at about 800°C using argon as a carrier gas. The preparation of pure VO₂ requires special care to make it homogeneously stoichiometric and to obtain steep concentration profiles at the TiO₂/VO₂ interface. Layers were obtained which had electrical and optical properties comparable to the best bulk crystals grown by other techniques. Homogeneous solid solutions of V_1−xCr_xO₂ epilayers were also grown for the first time in the range o < x < 0.17. Chromium concentration and homogeneity were determined by electron microprobe analysis. The separation coefficient k was also found to vary with x. It is close to unity below x = 0.001 and above this value Cr is incorporated more easily. High quality heteroepitaxial layers (1 cm² area, 1 to 30 μm thickness) of V_1−xCr_xO₂ have for the first time allowed the measurement of the optical absorption coefficient.     

Y2O3-Al2O3-Nd2O3 phase diagram and the growth of (Y,Nd)3 Al5O12 single crystals

The optimum compositions of the melts used for the growth of yttrium-aluminum garnet (YAG) single crystals with different neodymium contents are determined using the phase diagram of the ternary system Y₂O₃-Al₂O₃-Nd₂O₃ with the binary sections Y₃Al₅O₁₂-Nd₂O₃ and Y₃Al₅O₁₂-Nd₃Al₅O₁₂. A number of melt compositions characterized by one garnet phase, namely, (Y,Nd)₃Al₅O₁₂, are established. Single crystals of yttrium-aluminum garnets with a high content of the activator (up to 2.6 wt % Nd) are grown by the Czochralski method. __________ Translated from Kristallografiya, Vol. 48, No. 5, 2003, pp. 945–949. Original Russian Text Copyright ? 2003 by Soboleva, Chirkin. Dedicated to the 60th Anniversary of the Shubnikov Institute of Crystallography of the Russian Academy of Sciences     

Surface crystallization of β-BaB2O4 phase using a CO2 laser source

This letter describes decrystallization process of the β-BaB₂O₄ phase on the surface of 63BaO-26B₂O₃-11TiO₂ glassy sample when irradiated by a CO₂ laser beam for 30-40 s, using a laser power of ≈1.7 W. An analysis by optical microscopy of the irradiated region showed that the glass surface contained crystallites with the same morphology as those observed after traditional crystallization in an electric furnace. However, the crystal growth rate and the crystallite sizes appeared to be higher than those obtained by heating in an electric furnace. X-ray diffraction of the irradiated region showed a preferential orientation of the β-BaB₂O₄ crystallites on the glass surface.     

Crystal growth of NdAl3(BO3)4 from K2O/MoO3/Nd2O3/B2O3/KF flux

NdAl₃(BO₃)₄ single crystals were grown by the flux method and the TSSG technique using a K₂O/3MoO₃/B₂O₃/0.5Nd₂O₃/KF flux system. Light-violet clear crystals could be obtained. The effects of fluoride on the growth of NAB crystals were investigated. As the content of KF was gradually increased, the growth form of NAB was changed from the equant to the columnar and the primary crystalline region of NAB was shrinked. At the ratio of KF/K₂O = 0.75, NAB crystals could not be grown.     

Precipitation of In2O3 nano-crystallites from glasses in the system Na2O/B2O3/Al2O3/In2O3

Glasses in the system Na₂O/B₂O₃/Al₂O₃/In₂O₃ were melted and subsequently tempered in the range from 500 to 700 °C. Depending on the chemical composition, various crystalline phases were observed. From samples without Al₂O₃, In₂O₃ could not be crystallized from homogeneous glasses, because either spontaneous In₂O₃ crystallization occurred during cooling, or other phases such as NaInO₂ were formed during tempering. The addition of alumina, however, controlled the crystallization of In₂O₃. Depending on the crystallization temperature applied, the crystallite sizes were in the range from 13 to 53 nm. The glass matrix can be dissolved by soaking the powdered glass in water. This procedure can be used to prepare nano-crystalline In₂O₃-powders.