Phase-matched frequency doubling in a LiNbO3-sapphire waveguide

An rf-sputtered thin film of LiNbO₃ on a sapphire substrate was used as a waveguide for optical frequency doubling. Employing a Nd:YAG laser and a tunable dye laser, whose output was used to pump a stimulated Raman cell, the TM^ω₀→TM^2W₂ up-conversion process was investigated in detail and the phase matched nature of this process was demonstrated. The conversion efficiency was estimated to be about 10^?3.     

YAl3(BO3)4: Crystal growth and characterization

The growth and characterization of YAl₃(BO₃)₄ (YAB), a potential nonlinear optical crystal for the fourth harmonic generation of Nd:YAG laser, was reported. Using top-seeded solution growth method, a YAB crystal with the dimensions of 16×16×18 mm³ was obtained from B₂O₃–Li₂O flux system. The advantages of this flux system and the growth process were discussed in detail. The as-grown YAB crystal was verified by powder X-ray diffraction. The transparency spectra indicated that the cut-off edge of the as-grown YAB was 170 nm. The fourth harmonic generation of a frequency doubled Nd:YAG laser, from 532 to 266 nm, was carried out with a YAB crystal doubler for the first time. Output pulse power obtained was 2.4 mW at 266 nm and the conversion efficiency from 532 to 266 nm was about 15.6%.     

Growth and characterization of L‐prolinium tartrate – A new organic NLO material

Single crystals of L‐Prolinium tartrate (C₅H₁₀NO₂)⁺ (C₄H₅O₆)^‐, a new organic non‐linear optical material of size: 15 × 10 × 10 mm³ were grown using submerged seed solution growth method. Characterization of the crystals was made using single crystal X‐ray diffraction and density determination. Spectroscopic, thermal, optical and mechanical studies were carried out. These studies show that the crystals are thermally stable upto 161°C, transparent for the fundamental and second harmonic generation of Nd: YAG (λ = 1064 nm) laser and possess good mechanical strength. Second harmonic generation (SHG) conversion efficiency was investigated to explore the NLO characteristics of this material using Kurtz and Perry method and it was found that the SHG conversion efficiency is about 90% of that of the standard KDP crystals. Laser damage threshold study was also carried out. (© 2007 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Growth and properties of Nd:Lu3Ga5O12 laser crystal by floating-zone method

Neodymium (Nd) doped lutetium gallium garnet (Nd:Lu₃Ga₅O₁₂, Nd:LuGG) single crystal was successfully grown by the optical floating-zone method for the first time to our knowledge. Its absorption and luminescence spectra at room temperature were measured. By using the J–O theory, the spectral parameters of Nd:LuGG were calculated, which indicated that Nd:LuGG should possess comparable and even better laser properties than Nd:YAG. The maximum output power of 855 mW at 1062 nm was achieved with slope efficiency of 23.4% under a pump power of 5.2 W, and optical conversion efficiency of 16.4%. All the results show that Nd:LuGG is a potential laser material.     

Laser wavelength effect on structural and optical properties of Cd34Se66 nanocrystalline thin film

Cadmium Selenide (Cd₃₄Se₆₆) thin films are deposited on a glass substrate using the thermal evaporation method at room temperature. The Cd₃₄Se₆₆ films are characterized using XRD. The crystallite size of the film is calculated from XRD data, which is found as 29.61 nm as-deposited. It is also found that crystallite size of Cd₃₄Se₆₆ changed after irradiation with N₂ and Nd:YAG laser. The changes in the optical properties of the films after irradiation with N₂ laser and Nd:YAG laser are also studied in the wavelength range of 300-700 nm and it is found that the optical band gap of the Cd₃₄Se₆₆ films changed after laser irradiation.     

Thermal and Nonlinear Optical Properties of Ca4YO(BO3)3

Ca₄YO(BO₃)₃ (YCOB) crystals have been grown using the vertical Bridgman method. The thermal properties of YCOB were measured for the first time to our knowledge. The specific heat is 729.7 J/kg K at 373K. The average thermal expansion coefficients along the a, b and c axes are 9.9 × 10^‐6 /K, 8.2 × 10^‐6 /K and 12.8 × 10^‐6 /K, respectively, in the temperature range of 293‐1173 K. The thermal conductivities along the a, b and c axes are 1.83 W/mK, 1.72 W/mK and 2.17 W/mK at 373 K. The anisotropy in the measured thermal conductivities of YCOB is consistent with the experimental results of the thermal expansion. The SHG of a Nd: YAG laser was compared with that of a KDP crystal. The effective nonlinear coefficients (d_eff) of YCOB in type I phase matching directions of (θ, ϕ) = (66.3°, 143.5°) and (65.9°, 36.5°) were estimated to be 1.45 pm/V and 0.91 pm/V, respectively. The bulk damage threshold was observed as 85 GW/cm² for single pulse of a Nd:YAG laser with 10 ns pulseduration.     

Synthesis and characterization of a new nonlinear optical single crystal: L‐Lysinium trifluoroacetate

Single crystals of a new L‐Lysine salt: L‐Lysinium trifluoroacetate {abbreviated as LLyTFA; [(NH₂)‐(CH₂)₄‐CH‐(NH₃)‐(COOH)]⁺ CF₃COO^‐} were grown by slow evaporation of an aqueous solution at room temperature. The grown crystals were subjected to single crystal X‐ray diffraction, FTIR and UV‐Vis‐NIR spectrum analyses. The UV‐Vis‐NIR spectrum shows that the absorption is very less in the whole of the region from ultraviolet to near IR. The Kurtz‐Perry powder SHG measurement using a Nd:YAG laser of wavelength 1064nm confirms the frequency doubling of the crystal and its powder SHG efficiency was measured as d_eff = 0.96 d_eff (KDP). (© 2007 WILEY ‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Spectral Properties of Oxide Crystals Free of Iron Ions

Al₂O₃ and YAG crystals were purified from traces of iron by the growth in reducing atmosphere. Luminescence output of such materials was substantially increased, but some undesirable properties as transient colour centre formation in YAG: Nd and low damage threshol of ruby laser rods were observed. Minimum concentration of iron ions which drastically change spectral properties of oxide crystals seems to be ⪅ 10⁻⁴ wt%.     

Colour Centre in Nd3+-doped Yttrium Aluminates

Spectroscopic and laser properties of YAG:Nd and YAP:Nd grown from the nonstoichiometric melts or those containing Mo and Fe impurity were compared. YAG:Nd grown from the melt with surplus of Y₂O₃ and annealed in H₂ at ∼ 1400 °C have an increased laser performance. Mo admixture in hydrogen annealed YAP:Nd laser crystals suppresses effectively the detrimental action of iron impurity.     

Synthesis,growth and characterization of organic nonlinear optical bis-glycine maleate (BGM) single crystals

A new organic compound of bis-glycine maleate was synthesized in the alkaline medium of 10% ammonium hydroxide solution. The bulk single crystals of Bis-Glycine Maleate (BGM) have been grown by slow cooling method. The grown crystals were characterized by employing single crystal and powder X-ray diffraction, Fourier transform infrared, optical absorption spectral studies and thermo gravimetric analysis. The microhardness studies confirmed that the BGM has a fairly high Vicker’s hardness number value (41 kg mm⁻²) in comparison to other organic NLO crystals. Second harmonic generation efficiency of the crystal measured by Kurtz–Perry powder method using Nd:YAG laser is found to be comparable to that of potassium dihydrogen phosphate (KDP). Frequency dependent dielectric studies were carried out along the major growth axis.     

Thermal conductivity and refractive indices of Nd:GdVO4 crystals

The thermal conductivities of Nd:YAG, M(Y,Gd)VO₄ crystals were measured at 298 K. The value of Nd:GdVO₄ crystal along <001> direction was 11.4 W/mK, which was higher than that of YAG crystal measured to be 10.7 W/mK. The principal refractive indices of Nd:GdVO₄ crystal in the temperature range from 20 °C to 170 °C were determined by auto‐collimation method. Based on the measured values of refractive indices, the Sellmeier equation and expression of temperature dependence of refractive indices have been obtained. The measured results show that the birefringence Δn is 0.22007 at 20 °C and temperature coefficient of birefringence is 4.33 × 10⁻⁶/°C for 1.064 μm. These results prove that the GdVO₄ crystal is a laser crystal with excellent thermal and birefringence properties. (© 2003 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Spectroscopic investigation of porous GaAs prepared by laser-induced etching

We have investigated the etching mechanism in Cr–O doped GaAs wafer under super- and sub-bandgap photon illumination. A comparison of the etching rate and properties of nanostructures from two samples which are etched with argon-ion laser (2.41 eV) and Nd:YAG laser (1.16 eV), are presented here. The etching mechanism is found different for these different illuminations, which play the key role in the formation of defects. It is observed that the etching process starts vigorously under sub-bandgap photon illumination through the mediation of intermediate defect states. SEM micrograph shows the formation of distinct GaAs nanostructures in sample etched by Nd:YAG laser. Porous structure produced by Nd:YAG laser shows strong room temperature luminescence in the red region. The size and size distribution of the nanocrystals are investigated by non-destructive Raman and photoluminescence spectroscopies. The data are analyzed within the framework of quantum confinement models.     

Comparative characterization of boron-implanted silicon after pulse laser annealing along single traces by SEM (SE,EBIC) and TEM studies

(111) oriented n-type silicon wafers which were implanted with 2 × 10¹⁵ B⁺/cm² at 77 K and at an energy of 60 keV are laser annealed (Nd:YAG pulse laser) in air for mean laser powers between P = 1.8 W and P = 4.0 W. The comparative application of scanning electron microscopy (SE, EBIC) and high voltage transmission electron microscopy (HVTEM, 1000 keV) allows an estimation of the annealing quality in separated lines without overlapping. Values specifically ascertained by SEM in the SE contrast mode for the annealing threshold power P _th, the power range for optimal annealing ΔP ₀ and for the geometric width of the monocrystalline resolidification perpendicular to the direction of the specimen movement (and related to the spot diameter) at different laser pulse powers P agree completely with the results found in EBIC. At an optimal laser pulse power of P ₀ = 3.2 W HVTEM enables monocrystalline epitaxially resolidified areas free of defects to be identified in the same geometric width as that ascertained by SE and EBIC.     

Fabrication of Cr4+,Nd3+:YAG transparent ceramics for self-Q-switched laser

Transparent 0.1 at.%Cr,1.0 at.%Nd:YAG (Y₃Al₅O₁₂) ceramics were fabricated by a solid-state reaction and vacuum sintering with CaO as a charge compensator and tetraethyl orthosilicate (TEOS) as a sintering aid using high-purity powders of Al₂O₃, Y₂O₃, Nd₂O₃ and Cr₂O₃. The mixed powder compacts were sintered at 1800 °C for 5 h and 30 h under vacuum. The optical transmittance of the Cr,Nd:YAG ceramics sintered at 1800 °C for 5 h and 30 h is ∼63% and ∼78% in the infrared wavelengths, respectively. The two samples exhibit pore-free structures and the average grain size is about 10 and 20 μm. For the sample sintered at 1800 °C for 5 h, the dominant fracture mechanism is the transgranular fracture. With increase of holding time up to 30 h, the ratio of intergranular fracture surfaces increase and more Cr³⁺ ions in the Cr,Nd:YAG ceramic transform to Cr⁴⁺. High-quality Cr⁴⁺,Nd³⁺:YAG transparent ceramics may be a potential self-Q-switched laser material.     

Growth of Nd:Sr3Ga2Ge4O14 crystals by a modified Bridgman method

Bridgman growth of Nd:SGG (Sr₃Ga₂Ge₄O₁₄) crystals has been investigated for the first time. Pt crucible of ∅︁25mm×250mm with a seed well of ∅︁10mm×80 mm is used, and seed is SGG crystal of ∅︁10mm×50mm grown by Bridgman method in advance. The growth parameters are optimized as the furnace temperature is set to 1450∼1500°C, temperature gradient in the crystal‐melt interface is less than 25 K/cm and growth rate is less than 0.5mm/h. The Nd:SGG crystals with 25mm in diameter and 60mm in length are grown successfully from 1.5 to 8at% Nd³⁺ doped stoichiometric Sr₃Ga₂Ge₄O₁₄ melt. The distribution coefficient and concentration of Nd³⁺ in Nd:SGG crystals are obviously higher than those of Nd:YAG crystal. (© 2007 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Laser-induced crystallization of β′-RE2(MoO4)3 ferroelectrics (RE: Sm, Gd, Dy) in glasses and their surface morphologies

The glasses with the compositions of 21.25RE₂O₃-63.75MoO₃-15B₂O₃ (RE: Sm, Gd, Dy) were prepared and the formation of β′-RE₂(MoO₄)₃ ferroelectrics was confirmed in the crystallized glasses obtained through a conventional crystallization in an electric furnace. The features of the glass structure and crystallization behavior were clarified from measurements of Raman scattering spectra. Continuous-wave Nd:YAG laser with a wavelength of 1064 nm (laser power: 0.6-0.9 W, laser scanning speed: S = 1-16 μm/s) was irradiated to 10.625Sm₂O₃-10.625Gd₂O₃ (or Dy₂O₃)-63.75MoO₃-15B₂O₃ glasses, and the structural modification was induced at the glass surface. At the scanning speed of S = 10 μm/s, crystal lines consisting of β′-Gd_2−xSm_x(MoO₄)₃ or β′-Dy_2−xSm_x(MoO₄)₃ crystals were patterned on the glass surface. It was found that those crystal lines have the surface morphology with periodic bumps. At S = 1 μm/s, it was found that crystal lines consist of the mixture of paraelectric α-Gd_2−xSm_x(MoO₄)₃ and ferroelectric β′-Gd_2−xSm_x(MoO₄)₃ crystals, indicating the phase transformation from the β′ phase to the α phase during laser irradiation. Homogeneous crystal lines with β′-RE₂(MoO₄)₃ ferroelectrics have not been written in this study, but further research is continuing.     

Low-K factor of SiO2 layer on Si irradiated by YAG:Nd laser

The change of optical and electrical properties of SiO₂ layer on Si single crystal exposed to YAG:Nd laser radiation has been found experimentally. The second harmonic of YAG:Nd laser was used as a source of light. Before irradiation the SiO₂ layer with thickness 0.75 μm had red color in reflecting light due to the interference. After irradiation with the laser with intensity of more than 3.5 MW/cm² red color changed to yellow. However, samples with thickness 0.21 μm did not change color after irradiation. We explain such peculiarities of optical properties by change of optical path. Capacity (C) measurements of SiO₂ layer with thickness 0.21 μm by the method of capacity–voltage characteristics have shown a decrease of C to more than 40%. It is possible if real part of dielectric permittivity (K) decreases or thickness of the SiO₂ layer increases. Atomic force microscope and profilemeter measurements did not show any change of surface roughness for the SiO₂ layer with thickness 0.21 μm. We suppose that after irradiation of the SiO₂ layer decrease of K takes place due to the formation of nanopores in SiO₂ or/and generation of the charged point defect at the interface of Si–SiO₂. Particularly the first is in agreement with measurements of micro hardness and capillary effect.     

Post UV irradiation annealing of E′ centers in silica controlled by H2 diffusion

We investigate the isothermal annealing of E′ centers generated by UV photons (266 nm) of a pulsed Nd:YAG laser in two natural silica types differing for their OH content. Electron spin resonance and absorption spectra recorded at room temperature at different delays from the laser exposure evidenced a partial reduction of E′ centers, more pronounced in the wet silica. These post irradiation kinetics complete within 10⁵ s, regardless the silica type, and they are consistent with a diffusion limited reaction between the E′ centers and the molecular hydrogen H₂. Analysis of our data is done by theoretical fits using the Waite's equation and compared with the H₂ diffusion parameters reported in literature. Finally, the interplay between the under radiation generation and the post irradiation annealing of E′ centers was investigated through repetitive laser exposures, which evidenced the higher resistance of wet silica to induced laser damage.     

Thermal and Laser Properties of Nd:YVO4 Crystal

Nd:YVO₄ crystal has been grown by Czochralski method. The data of thermal expansion and specific heat have been measured. The thermal expansion coefficients along a- and c-axis are a₁ = 2.2 x 10^-6 /K, and a₃ = 8.4 x 10^-6 /K respectively. The specific heat is 24.6 cal/mol x K at 330 K. The large anisotropy along c- and a-axis of thermal expansion coefficients is explained by the structure of YVO₄ crystal. 921 mW output laser at 1.06 mikrom has been obtained with a 3 mm x 3 mm x 1mm crystal sample when pumped by 1840 mW cw laser diode, and the slope efficiency is 55.5%.     

Dynamic Holography Method for Nondestructive Testing of Optical Homogeneity of Transparent Media

The potential of the dynamic holography method for testing the phase optical homogeneity of media transparent in visible light has been considered. This method is based on imaging samples in the scheme of two-wave mixing of the second-harmonic radiation of a Nd:YAG laser and image amplification in a photorefractive barium-strontium niobate crystal. Examples of identifying phase inhomogeneities at a level of 10^-5 cm^-1 and less in crystals of different compositions are presented.