InGaN/GaN多量子阱LED载流子泄漏与温度关系研究

通过测量光电流,直接观察了InGaN/GaN量子阱中载流子的泄漏程度随温度升高的变化关系。当LED温度从300K升高到360K时,在相同的光照强度下,LED的光电流增大,说明在温度上升之后,载流子从量子阱中逃逸的数目更多,即载流子泄漏比例增大。同时,光电流的增大在激发密度较低的时候更为明显,而且光电流随温度的增加幅度与激发光子的能量有关。用量子阱-量子点复合模型能很好地解释所观察到的实验现象。实验结果直接证明,随着温度的升高,InGaN/GaN量子阱中的载流子泄漏将显著增加,而且在低激发密度下这一效应更为明显。温度升高导致的载流子泄漏增多是InGaN多量子阱LED发光效率随温度升高而降低的重要原因。     

双波长InGaN/GaN多量子阱发光二极管的光电特性

为了实现高显色指数和流明效率的白光发光二极管,在（0001）蓝宝石衬底上利用金属有机化学气相沉积系统,生长了双波长发射的InGaN/GaN多量子阱发光二极管结构.通过对不同In组分含量的双波长发射发光二极管结构的光致发光和电致发光性能进行分析,结果表明In组分含量对双波长发射发光二极管的光致发光谱的稳定性及发光效率有重要影响.此外,用双蓝光发射的芯片来激发YAG:Ce荧光粉实现了高显色指数白光发射.     

双波长InGaN/GaN多量子阱发光二极管的光电特性

为了实现高显色指数和流明效率的白光发光二极管,在(0001)蓝宝石衬底上利用金属有机化学气相沉积系统,生长了双波长发射的InGaN/GaN多量子阱发光二极管结构.通过对不同In组分含量的双波长发射发光二极管结构的光致发光和电致发光性能进行分析,结果表明In组分含量对双波长发射发光二极管的光致发光谱的稳定性及发光效率有重...     

极化效应对InGaN/GaN多量子阱结构光电特性的影响

通过求解修正的基于k·p方法的有效质量哈密顿方程并与泊松方程进行自洽,得到在极化效应影响下InGaN/GaN多量子阱的能带结构和自发辐射谱.计算结果表明,极化效应使InGaN/GaN多量子阱结构的带边由方形势变成三角形势,使导带和价带间的带隙宽度减小导致发光峰值波长红移,并使电子和空穴的分布产生空间分离从而减小发光效率...     

InGaN/GaN多量子阱蓝光发光二极管老化过程中的光谱特性

系统地研究了小注入电流(＜4 mA)下InGaN/GaN多量子阱结构蓝光发光二极管的发光光谱特性在老化过程中的变化。对比老化前后的电致发光(EL)光谱,发现在注入电流1 mA下的峰值波长(peak wavelength)和半高宽(FWHM)随老化时间增加而减小,变化过程分两个阶段：前期(＜100 h)减小速度较快,而后逐渐变缓,呈现出与LEDs的发光光功率一致的变化规律,说明LEDs的等效极化电场在老化过程中减弱,这一变化和量子阱内缺陷的增加有明确的关系。通过电学特性测量发现同一结电压(V_j=1.8 V)下的结电容C_j和由交流小信号I—V方法计算得到的注入电流1 mA下的结电压V_j随老化时间增加而增大,明确了在同等小注入电流下量子阱内的载流子浓度随老化过程增加。分析表明在老化过程中InGaN/GaN 多量子阱结构蓝光发光二极管量子阱内的缺陷及其束缚的载流子数量增加,形成了增强的极化电场屏蔽效应,减弱的等效极化电场导致了量子阱的能带倾斜变小,带边辐射复合能量增大,能态密度增多,对应的发光过程的峰值波长变短(蓝移),半高宽变窄。     

In组分渐变提高InGaN/GaN多量子阱发光二极管发光性能

利用金属有机物化学气相沉积系统在蓝宝石衬底上通过有源层的变温生长,得到In组分渐变的量子阱结构,从而获得具有三角形能带结构的InGaN/GaN多量子阱发光二极管(LED)(简称三角形量子阱结构LED).变温光致发光谱结果表明,相对于传统具有方形能带结构的量子阱LED(简称方形量子阱结构LED),三角形量子阱结构有效提高了量子阱中电子和空穴波函数的空间交叠,从而增加了LED的内量子效率;电致发光谱结果表明,三角形量子阱结构LED器件与传统结构LED器件相比,明显改善了发光峰值波长随着电流的蓝移现象.通过以上     

垒掺In提高InGaN/GaN多量子阱发光特性

利用金属有机物化学气相淀积技术在蓝宝石衬底上生长InGaN/GaN多量子阱结构.对多量子阱垒层掺In和非掺In进行了比较研究，结果表明，垒掺In 的样品界面质量变差，但明显增加了光致发光谱的峰值强度和积分强度，带边峰与黄光峰强度之比增大，降低了表面粗糙度.利用这两种结构制备了相应的发光二极管(LED)样品.通过电荧光测量可知，垒掺In的LED比非掺In的LED有较高的发光强度和相对均匀的波长，这主要是由于垒掺In后降低了阱与垒之间晶格失配的应力，从而降低了极化电场，提高了辐射复合效率. 关键词： InGaN/GaN多量子阱 X射线双晶衍射 原子力显微镜 光致发光     

喷淋头高度对InGaN/GaN量子阱生长的影响

在Aixtron 3×2近耦合喷淋式金属有机化学气相沉积反应室中,调节喷淋头与基座之间的距离,制备了7,13,18,25 mm间距的4个InGaN/GaN量子阱样品。利用原子力显微镜(AFM)、X射线衍射(XRD)对样品表面形貌及界面质量进行了表征。研究表明:随着高度的增加,量子阱的表面粗糙度减少,垒/阱界面陡峭度逐步变差,垒层和阱层厚度及阱层In组分含量减少;增加高度至一定值后,量子阱厚度及In组分趋于稳定。此外,对比垒层和阱层的厚度变化,垒层厚度的变化幅度较阱层更为明显。     

具有超晶格应力调制结构的绿光InGaN/GaN多量子阱的发光特性

研究了具有InGaN/GaN超晶格(SL)插入结构的绿光InGaN/GaN多量子阱(MQW)的发光特性。结构测试表明,SL插入结构并没有引起MQW中平均In组份的增加,而是改变了In组份的分布,形成了高In组份的量子点和低In组份量子阱。其电致发光(EL)谱和光致发光(PL)谱均出现了双发光峰。我们认为这两个 峰分别来自于量子点和量子阱,且存在着载流子从阱向点转移的输运机制。最后变温PL积分强度的Arrhenius 拟合表明,SL插入结构并没有在MQW中引入新的缺陷,使其发光效率下降。     

InGaN/GaN多量子阱的组分确定和晶格常数计算

采用金属有机化学气相沉积(MOCVD)技术以蓝宝石为衬底在n型GaN单晶层上生长了InGaN/GaN多量子阱结构外延薄膜，利用高分辨X射线衍射(HRXRD)，卢瑟福背散射/沟道(RBS/channeling)，以及光致发光(PL)技术对InGaN/GaN多量子阱结构薄膜分别进行了平均晶格常数计算、In原子替位率计算和In组分的定量分析.研究表明：InGaN/GaN多量子阱的水平和垂直方向平均晶格常数分别为a_epi=0.3195nm，c_epi=0.5198nm，In原子的替位率为99.3%，利用HRXRD和RBS/channeling两种分析技术计算In的组分分别是0.023和0.026，并与样品生长时设定的预期目标相符合，验证了两种实验方法的准确性；而用室温条件下的光致发光谱(PL)来计算InGaN/GaN多量子阱中In的组分是与HRXRD和RBS/channeling的实验结果相差很大，说明用PL测试In组分的方法是不适宜的. 关键词： InGaN/GaN多量子阱 高分辨X射线衍射 卢瑟福背散射/沟道 光致发光     

InGaN/GaN量子阱垒层和阱层厚度对GaN基激光器性能的影响及机理

采用LASTIP软件研究了InGaN/GaN(In组分为15%)量子阱垒层和阱层厚度对GaN基蓝紫光激光器性能的影响及机理. 模拟计算结果表明, 当阱层太薄或太厚时, GaN基激光器的阈值电流增加、输出功率下降, 最优的阱层厚度为4.0 nm左右; 当阱层厚度太薄时, 载流子很容易泄漏, 而当阱层厚度太厚时, 极化效应导致发光效率降低, 研究还发现, 与垒层厚度为7 nm 相比, 垒层厚度为15 nm时激光器的阈值电流更低、输出功率更高, 因此适当地增加垒层厚度能显著抑制载流子泄漏, 从而改善激光器性能.     

Si(110)和Si(111)衬底上制备InGaN/GaN蓝光发光二极管

分别在Si(110)和Si(111)衬底上制备了In Ga N/Ga N多量子阱结构蓝光发光二极管(LED)器件.利用高分辨X射线衍射、原子力显微镜、室温拉曼光谱和变温光致发光谱对生长的LED结构进行了结构表征.结果表明,相对于Si(111)上生长LED样品,Si(110)上生长的LED结构晶体质量较好,样品中存在较小的张应力,具有较高的内量子效率.对制备的LED芯片进行光电特性分析测试表明,两种衬底上制备的LED芯片等效串联电阻相差不大,在大电流注入下内量子效率下降较小;但是,相比于Si(111)上制备LED芯片,Si(110)上LED芯片具有较小的开启电压和更优异的发光特性.对LED器件电致发光(EL)发光峰随驱动电流的变化研究发现,由于Si(110)衬底上LED结构中阱层和垒层存在较小的应力/应变而在器件中产生较弱的量子限制斯塔克效应,致使Si(110)上LED芯片EL发光峰随驱动电流的蓝移量更小.     

Influence of barrier thickness on the structural and optical properties of InGaN/GaN multiple quantum wells

The structural and optical properties of InGaN/GaN multiple quantum wells(MQWs) with different barrier thicknesses are studied by means of high resolution X-ray diffraction(HRXRD), a cross-sectional transmission electron microscope(TEM), and temperature-dependent photoluminescence(PL) measurements. HRXRD and cross-sectional TEM measurements show that the interfaces between wells and barriers are abrupt and the entire MQW region has good periodicity for all three samples. As the barrier thickness is increased, the temperature of the turning point from blueshift to redshift of the S-shaped temperature-dependent PL peak energy increases monotonously, which indicates that the localization potentials due to In-rich clusters is deeper. From the Arrhenius plot of the normalized integrated PL intensity, it is found that there are two kinds of nonradiative recombination processes accounting for the thermal quenching of photoluminescence,and the corresponding activation energy(or the localization potential) increases with the increase of the barrier thickness.The dependence on barrier thickness is attributed to the redistribution of In-rich clusters during the growth of barrier layers,i.e., clusters with lower In contents aggregate into clusters with higher In contents.     

Fabrication and optical properties of InGaN/GaN multiple quantum well light emitting diodes with amorphous BaTiO₃ ferroelectric film

BaTiO3(BTO) ferroelectric thin films are prepared by the sol-gel method.The fabrication and the optical properties of an InGaN/GaN multiple quantum well light emitting diode(LED) with amorphous BTO ferroelectric thin film are studied.The photoluminescence(PL) of the BTO ferroelectric film is attributed to the structure.The ferroelectric film which annealed at 673 K for 8 h has the better PL property.The peak width is about 30 nm from 580 nm to 610 nm,towards the yellow region.The mixed electroluminescence(EL) spectrum of InGaN/GaN multiple quantum well LED with 150-nm thick amorphous BTO ferroelectric thin film displays the blue-white light.The Commission Internationale De L’Eclairage(CIE) coordinate of EL is(0.2139,0.1627).EL wavelength and intensity depends on the composition,microstructure and thickness of the ferroelectric thin film.The transmittance of amorphous BTO thin film is about 93% at a wavelength of 450 nm-470 nm.This means the amorphous ferroelectric thin films can output more blue-ray and emission lights.In addition,the amorphous ferroelectric thin films can be directly fabricated without a binder and used at higher temperatures(200℃-400℃).It is very favourable to simplify the preparation process and reduce the heat dissipation requirements of an LED.This provides a new way to study LEDs.     

Analysis of localization effect in blue-violet light emitting InGaN/GaN multiple quantum wells with different well widths

Four blue-violet light emitting InGaN/GaN multiple quantum well(MQW) structures with different well widths are grown by metal–organic chemical vapor deposition. The carrier localization effect in these samples is investigated mainly by temperature-dependent photoluminescence measurements. It is found that the localization effect is enhanced as the well width increases from 1.8 nm to 3.6 nm in our experiments. The temperature induced PL peak blueshift and linewidth variation increase with increasing well width, implying that a greater amplitude of potential fluctuation as well as more localization states exist in wider wells. In addition, it is noted that the broadening of the PL spectra always occurs mainly on the low-energy side of the PL spectra due to the temperature-induced band-gap shrinkage, while in the case of the widest well, a large extension of the spectral curve also occurs in the high energy sides due to the existence of more shallow localized centers.     

Fabrication and optical properties of InGaN/GaN multiple quantum well light emitting diodes with amorphous BaTiO3 ferroelectric film

BaTiO3 （BTO） ferroelectric thin films are prepared by the sol,el method. The fabrication and the optical properties of an InGaN/GaN multiple quantum well light emitting diode （LED） with amorphous BTO ferroelectric thin film are studied. The photolumineseence （PL） of the BTO ferroelectric film is attributed to the structure. The ferroeleetric film which annealed at 673 K for 8 h has the better PL property. The peak width is about 30 nm from 580 nm to 610 nm, towards the yellow region. The mixed electroluminescence （EL） spectrum of InGaN/GaN multiple quantum well LED with 150-nm thick amorphous BTO ferroelectric thin film displays the blue-white light. The Commission Internationale De L＇Eclairage （CIE） coordinate of EL is （0.2139, 0.1627）. EL wavelength and intensity depends on the composition, microstructure and thickness of the ferroelectric thin film. The transmittance of amorphous BTO thin film is about 93% at a wavelength of 450 nm-470 nm. This means the amorphous ferroelectrie thin films can output more blue-ray and emission lights. In addition, the amorphous ferroelectric thin films can be directly fabricated without a binder and used at higher temperatures （200 ℃-400 ℃）. It is very favourable to simplify the preparation process and reduce the heat dissipation requirements of an LED. This provides a new way to study LEDs.     

Influence of injection current and temperature on electroluminescence in InGaN/GaN multiple quantum wells

Electroluminescence (EL) spectra of blue InGaN/GaN multiple-quantum-well light-emitting diode (LED) have been investigated over a wide range of injection current (0.001–200 mA) and at various temperatures (6–300 K). Surprisingly, with increasing the injection current the EL peak energy shows an initial blueshift accompanied by a broadening of the EL linewidth at low temperatures (below 30 K). This trend differs from the usual photoluminescence (PL) measurement results, which have shown that with increasing the optical excitation power the PL peak energy gave an initial blueshift accompanied by a narrowing of the PL linewidth at low temperatures. The anomalous current behavior of the EL spectra may be attributed to electron leakage results in the failure of Coulomb screening effect and the relative enhancement of the low-energetic localized state filling at low temperatures and low currents. The electron leakage for the LED is further confirmed by both the current dependence of the EL intensity and the temperature dependence of the EL efficiency.     

Effects of InGaN barriers with low indium content on internal quantum efficiency of blue InGaN multiple quantum wells

Blue In_0.2Ga_0.8N multiple quantum wells (MQWs) with In_xGa_{1 - x}N (x=0.01-0.04) barriers are grown by metal organic vapour phase epitaxy. The internal quantum efficiencies (IQEs) of these MQWs are studied in a way of temperature-dependent photoluminescence spectra. Furthermore, a 2-channel Arrhenius model is used to analyse the nonradiative recombination centres (NRCs). It is found that by adopting the InGaN barrier beneath the lowest well, it is possible to reduce the strain hence the NRCs in InGaN MQWs. By optimizing the thickness and the indium content of the InGaN barriers, the IQEs of InGaN/InGaN MQWs can be increased by about 2.5 times compared with conventional InGaN/GaN MQWs. On the other hand, the incorporation of indium atoms into the intermediate barriers between adjacent wells does not improve IQE obviously. In addition, the indium content of the intermediate barriers should match with that of the lowest barrier to avoid relaxation.