THz技术在农产品/食品品质检测中的应用

农产品/食品的质量和品质问题越来越受人们关注。探索实际可行的农产品/食品的无损检测与品质评估技术正在成为研究热点。太赫兹(THz)辐射是位于中红外和微波波段之间的一段电磁波,具有非常重要的科学研究和应用价值。长期以来由于缺乏可行的THz波产生方法与探测手段,该波段相关领域的研究滞缓。THz光谱传感和成像技术是THz波的两个主要应用技术。THz光谱检测技术作为一种新型检测技术能够获得传统检测无法获得的信息。近十几年来,THz波用于来研究固、液、气相等各种物质的光电特性、分子内部振动和组成信息,在生物分析、医疗诊断、安全检测、环境控制等领域,THz技术显示出广阔的应用前景。文章介绍了THz波的主要性质、THz波检测技术的特点,论述了THz技术在农产品、食品质量与品质检测中的最新进展及其应用的潜力。     

THz电磁波在时变非磁化等离子体中的传播特性研究

本文建立了时变非磁化等离子体平板的一维模型,并采用时域有限差分(FDTD)方法对太赫兹(THz)电磁波在时变等离子体中传播时的反射、透射系数及吸收率进行了计算.然后根据计算结果分析了时变等离子体的上升时间、电子密度、温度以及等离子体平板厚度等参数对不同频段THz波在等离子体中传播特性的影响.分析结果表明:THz波在时变等离子体中传播时,其反射系数受等离子体电子密度和上升时间的影响较大;而吸收率则随着上升时间的减小、电子密度及平板厚度的增加而增大;此外,THz电磁波能够穿透量级为1020m-3的高密度等离子体层,可以作为再入段飞行器通信以及高密度等离子体诊断的理想工具.     

Hysteretic microwave cyclotron resonance of a laterally confined 2 DEG

A hysteretic cyclotron resonance (CR) is discovered in a laterally confined high mobility two-dimensional electron gas (2DEG) in GaAs/AlGaAs heterostructures. The hysteresis and switching phenomena are observed in microwave radiation (36 GHz) transmission at temperature 1.8–25 K. It is found that the hysteresis is accompanied by long-lived, microwave-induced changes of the 2DEG density. These density changes is attributed to a modification of electron vertical transport processes in heterostructures under the microwave heating of the 2DEG. A phenomenological model based on the 2DEG density-dependent CR, describes reasonably the main experimental findings.     

Generation of THz Radiation from Laser Beam Filamentation in a Magnetized Plasma

The terahertz (THz) frequency radiation production as a result of nonlinear interaction of high intense laser beam with low density ripple in a magnetized plasma has been studied. If the appropriate phase matching conditions are satisfied and the frequency of the ripple is appropriate then this difference frequency can be brought in the THz range. Self focusing (filamentation) of a circularly polarized beam propagating along the direction of static magnetic field in plasma is first investigated within extended‐paraxial ray approximation. The beam gets focused when the initial power of the laser beam is greater than its critical power. Resulting localized beam couples with the pre‐existing density ripple to produce a nonlinear current driving the THz radiation. By changing the strength of the magnetic field, one can enhance or suppress the THz emission. The expressions for the laser beam width parameter, the electric field vector of the THz wave have been obtained. For typical laser beam and plasma parameters with the incident laser intensity ≈ 10¹⁴ W/cm², laser beam radius (r₀) = 50 μm, laser frequency (ω₀) = 1.8848 × 10¹⁴rad/s, electron plasma (low density rippled) wave frequency (ω₀) = 1.2848 × 10¹⁴ rad/s, plasma density (n₀) = 5.025 × 10¹⁷cm^–3, normalized ripple density amplitude (μ)=0.1, the produced THz emission can be at the level of Giga watt (GW) in power (© 2012 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

时空非均匀等离子体鞘套中太赫兹波的传播特性

高超声速飞行器再入地面的过程中,其周围等离子体的电子密度是非均匀且随时间变化的.对于不同的再入高度,飞行器周围的温度和压强也会发生改变.因此,研究电磁波在时空非均匀等离子体鞘套中的传播特性意义重大.首先建立了时变非均匀的等离子体鞘套模型,然后通过经验公式得到温度、压强与碰撞频率三者的关系.采用时域有限差分方法计算了太赫兹波段中不同电子密度弛豫时间、温度、压强时的反射系数、透射系数和吸收率.研究结果表明:在太赫兹波段中,电子密度的弛豫时间越长,温度越高,压强越大,电磁波越容易穿透等离子体;弛豫时间越短,温度越低,压强越小,等离子体对电磁波吸收率的变化越明显.这些结果为解决"黑障"问题提供了理论依据.     

Electronic subband structure in two-dimensional electron gases under intense laser radiations

We present a theoretical study on the influence of intense terahertz (THz) electromagnetic (EM) radiations on the electronic structures in a modulation-doped two-dimensional (2D) semiconductor system. We find that in the presence of a THz EM radiation field polarised linearly along the 2D-plane of a 2D electron gas (2DEG), the electron density of states will be modified strongly by the intensity and the frequency of the radiation field. As a consequence, the Fermi-energy and the electron density in the system will be affected markedly by the EM radiations. The results have indicated that the photon-modified electronic subband structure in a 2DEG device can be observed by using the recently developed free-electron laser sources.     

0.14 THz瓦量级折叠波导行波管设计

在本课题组此前采用显式方法设计0.14 THz宽带折叠波导慢波结构的基础上,设计了一种0.14 THz瓦量级输出折叠波导行波管。通过CST MWS软件分析结构尺寸对冷测特性的影响规律来确定一组慢波结构参数,然后对电子枪、永磁聚焦系统、输入输出结构、衰减结构及收集极系统进行设计,最后经过CST PS软件进行整管热测特性仿真模拟。此过程不断迭代,最终找到一组结构参数满足频率在0.14 THz、输入功率为20 mW时,折叠波导行波管输出功率大于6 W。为了验证设计的电子光学系统的正确性,加工装配了一根流通管,并进行了流通率测试,测得流通率大于80%。     

Recent Advance in Terahertz Wave and Material Basis

The unexplored terahertz (THz) region involves important phenomena of both fundamental and applied natures. Examples include phonon interactions, rotational transitions, and intermolecular dynamics. Frequency tunable high-power THz wave generation has been successfully achieved utilizing lattice resonance of LiNbO₃ and GaP crystals, respectively. Semiconductor devices utilizing the electron tunneling effect have also been developed.     

DX-center energy calculation with quantitative mobility spectrum analysis in n-AlGaAs/GaAs structures with low Al content

Experimental Hall data that were carried out as a function of temperature (60–350 K) and magnetic field (0–1.4 T) were presented for Si-doped low Al content (x=0.14) n–Al_xGa_1−xAs/GaAs heterostructures that were grown by molecular beam epitaxy (MBE). A 2-dimensional electron gas (2DEG) conduction channel and a bulk conduction channel were founded after implementing quantitative mobility spectrum analysis (QMSA) on the magnetic field dependent Hall data. An important decrease in 2DEG carrier density was observed with increasing temperature. The relationship between the bulk carriers and 2DEG carriers was investigated with 1D self consistent Schrödinger–Poisson simulations. The decrement in the 2DEG carrier density was related to the DX-center carrier trapping. With the simulation data that are not included in the effects of DX-centers, 17 meV of effective barrier height between AlGaAs/GaAs layers was found for high temperatures (T>300 K). With the QMSA extracted values that are influenced by DX-centers, 166 meV of the DX-center activation energy value were founded at the same temperatures.     

相对论返波管注-波作用不稳定区的研究

 以环形电子注驱动的、正弦型周期慢波结构的相对论返波管（RBWO）为模型,理论推导出RBWO慢波结构的色散方程,画出了不包括和包括电子注的色散曲线,然后采用在复平面上绘制等高线图进行逼近的方法对注-波作用不稳定区工作频率的实部和虚部进行了求解,绘出了完整的包括电子注的慢波结构色散关系曲线,并估算了微波的时间增长率和能量转换效率。研究得出：当a（电子注电流参数）较大时,电磁波与慢电荷波的相互作用是不稳定的;而在a较小时,注-波相互作用具有明显的三波作用的特点;微波增长是通过注-波不稳定作用引起的;随着a的增大,微波时间增长率先增大后减小,在a为0.02时有最大值1.37,此时的能量转换效率为19%;增大电子注半径或慢波结构的波纹深度都可以增强注-波不稳定作用。     

THz波在金属镀层空芯波导中传输的理论和实验研究

本文基于微扰法求得不同金属镀层空心圆波导中各模式的损耗系数,对金属镀层空芯波导中THz波传输损耗随金属材料、波导结构等参数的变化关系进行了数值模拟.根据数值分析结果,优化设计并拉制了内径为1.1 mm的镀银空芯波导,实验测得当THz波的频率为2.5 THz时,传输损耗为8.6 dB/m,实现了THz波短距离的有效传输. 关键词： 太赫兹波 金属空芯波导 传输损耗     

Nonlinear ion‐acoustic cnoidal wave in electron‐positron‐ion plasma with nonextensive electrons

Effects of plasma nonextensivity on the nonlinear cnoidal ion‐acoustic wave in unmagnetized electron‐positron‐ion plasma have been investigated theoretically. Plasma positrons are taken to be Maxwellian, while the nonextensivity distribution function was used to describe the plasma electrons. The known reductive perturbation method was employed to extract the KdV equation from the basic equations of the model. Sagdeev potential, as well as the cnoidal wave solution of the KdV equation, has been discussed in detail. We have shown that the ion‐acoustic periodic (cnoidal) wave is formed only for values of the strength of nonextensivity (q). The q allowable range is shifted by changing the positron concentration (p) and the temperature ratio of electron to positron (σ). For all of the acceptable values of q, the cnoidal ion‐acoustic wave is compressive. Results show that ion‐acoustic wave is strongly influenced by the electron nonextensivity, the positron concentration, and the temperature ratio of electron to positron. In this work, we have investigated the effects of q, p, and σ on the characteristics of the ion‐acoustic periodic (cnoidal) wave, such as the amplitude, wavelength, and frequency.     

Temperature dependence of the inelastic scattering in a GaAs/n-AlGaAs selectively doped heterojunction with InGaAs quantum dots

Inelastic scattering processes of two-dimensional electron gas (2DEG) have been investigated in a inverted GaAs/n-AlGaAs heterojunction with self-organized InGaAs quantum dots (QDs) embedded near the 2DEG channel where the electron population in the QDs is controllable by the gate voltage V_g. By analyzing magnetoresistance, the inelastic scattering time τ_ε have been evaluated as functions of V_g at 0.6, 0.8, 1.2, and 1.7 K. It is found that τ_ε increases with V_g below 0.8 K and decreases above 1.2 K, which suggests that the dominant scattering mechanisms below 0.8 K and above 1.2 K are different. To interpret this behavior, we have calculated the inelastic scattering time theoretically. It is found that the experimental data are well explained by a theoretical model where a 2D electron is considered to be inelastically scattered both by the other 2D electrons and by the trapped electrons in QDs. It is also found that the 2DEG–2DEG scattering is dominant at low temperature, while the 2DEG-QDs scattering becomes important as the temperature increases.     

高功率微波与等离子体相互作用理论和数值研究

研究高功率微波与等离子体的相互作用,对于微波放电和电磁兼容研究均具有重要意义.基于波动方程、等离子体的流体力学方程以及波尔兹曼方程,建立高功率微波脉冲与等离子体相互作用的理论模型,并结合等离子体的特征参数,采用时域有限差分方法分析了等离子体电子密度和高功率微波传输特性的变化.结果表明,由于高功率微波的电子加热作用,等离子体中的非线性效应明显,发生击穿使得等离子体电子密度增大,从而导致微波的反射增强,透过率降低.所提出的模型和相关结果对于高功率微波和电磁脉冲防护具有指导意义.     

InAlN/GaN异质结二维电子气波函数的变分法研究

使用变分法推导了InAlN/GaN异质结二维电子气波函数和基态能级的解析表达式,并讨论了InAlN/GaN异质结结构参数对二维电子气电学特性的影响.在假设二维电子气来源于表面态的前提下,使用了一个包含两个变分参数的尝试波函数推导电子总能量期望值,并通过寻找能量期望极小值确定变分参数.计算结果显示,二维电子气面密度随InAlN厚度的增大而增大,且理论结果与实验结果一致.二维电子气面密度增大抬高了基态能级与费米能级,并保持二者之差增大以容纳更多电子.InAlN/GaN界面处的极化强度失配随着In组分增大而减弱,二维电子气面密度随之减小,并导致基态能级与费米能级减小.所建立的模型能够解释InAlN/GaN异质结二维电子气的部分电学行为,并为电子输运与光学跃迁的研究提供了解析表达式.     

Modeling of terahertz radiation emission from a free‐electron laser

In this article, we report the generation of terahertz (THz) radiation using the interaction of a laser‐modulated relativistic electron beam (REB) with a surface plasma wave. Two laser beams propagating through the modulator interact with the REB, leading to velocity modulation of the beam. This results in pre‐bunching of the REB. The pre‐bunched beam travels through the drift space, where the velocity modulation translates into density modulation. The density‐modulated beam, on interacting with the surface plasma pump wave, acquires an oscillatory velocity that couples with the modulated beam density to give rise to a nonlinear current density which acts as an antenna to give THz radiation. By optimizing the parameters of the beam and the wiggler, we obtain power of the order of 10⁻⁴ using the current scheme.     

Oscillations of the magnetoresistance of a two-dimensional electron gas under microwave irradiation: Influence of the irradiation frequency

We present measurements of the magnetoresistance of a two-dimensional electron gas (2DEG) under continuous microwave as a function of the irradiation frequency. In a previous work by Simovič et al. [Phys. Rev. B 71 (2005) 233303], the magnetoresistance under microwave was shown to be modulated by oscillations of large amplitude that are periodic with magnetic field, their period and phase depending strongly on the electron density. Here we show that the phase and the amplitude of the microwave-induced oscillations also depend on the frequency of irradiation and the sign of the magnetic field.     

Bimodal Nanoparticle Size Distributions Produced by Laser Ablation of Microparticles in Aerosols

Silver nanoparticles were produced by laser ablation of a continuously flowing aerosol of microparticles in nitrogen at varying laser fluences. Transmission electron micrographs were analyzed to determine the effect of laser fluence on the nanoparticle size distribution. These distributions exhibited bimodality with a large number of particles in a mode at small sizes (3–6-nm) and a second, less populated mode at larger sizes (11–16-nm). Both modes shifted to larger sizes with increasing laser fluence, with the small size mode shifting by 35% and the larger size mode by 25% over a fluence range of 0.3–4.2-J/cm². Size histograms for each mode were found to be well represented by log-normal distributions. The distribution of mass displayed a striking shift from the large to the small size mode with increasing laser fluence. These results are discussed in terms of a model of nanoparticle formation from two distinct laser–solid interactions. Initially, laser vaporization of material from the surface leads to condensation of nanoparticles in the ambient gas. Material evaporation occurs until the plasma breakdown threshold of the microparticles is reached, generating a shock wave that propagates through the remaining material. Rapid condensation of the vapor in the low-pressure region occurs behind the traveling shock wave. Measurement of particle size distributions versus gas pressure in the ablation region, as well as, versus microparticle feedstock size confirmed the assignment of the larger size mode to surface-vaporization and the smaller size mode to shock-formed nanoparticles.     

0.14 THz过模表面波振荡器初步实验研究

为获得大功率太赫兹源,对基于表面波振荡器的相对论太赫兹源进行了初步的实验研究。为便于机械加工和实验装配,器件采用过模矩形波导慢波结构。利用理论分析和数值模拟得到的参数,在CKP1000加速器上进行了实验。功率测量采用辐射场功率密度积分方法,频率测量采用截止波导滤波法。在电子束压为320 kV、电子束流强度为2.1 kA、引导磁场为5 T条件下,实验获得频率0.136 THz以上、脉冲宽度为1.5 ns和辐射功率约2 MW的太赫兹信号输出。     

微波瑞利散射法测定空气电火花激波等离子体射流的时变电子密度

大气压空气电火花激波等离子体射流的电子密度在亚微秒时间尺度上瞬变,其电子密度的测定很难.基于微波瑞利散射原理,本文测量了空气电火花冲击波流注放电等离子体射流的时变电子密度.实验结果表明:测量系统的标定参数A为1.04 × 105 V·Ω·m–2;空气流注放电等离子体射流的电子密度与等离子体射流的半径和长度有关,结合高速放电影像展示的等离子体射流的等效半径和等效长度,测定的电子密度在1020 m–3的量级,且随时间先快速增长至峰值再成指数衰减.此外,本文还探讨了等离子体射流的不同等效尺度对测定结果的影响;分析结果表明,采用时变等效半径和时变等效长度的计算结果最有效,且第1个快速波峰是由光电离的电离波导致的.