半导体量子点电子结构理论研究的进展

半导体量子点材料由其具有重要的理论研究意义和潜在的巨大应用前景而成为当今理论和材料研究的热点，本文综述了半导体量子点材料电子结构的理论研究发展进程。     

量子点电子态的尺寸效应和磁场的影响

在有效质量近似下，使用少体物理的方法，计算了在不同大小约束势情况下二维量子点三电子系统的自旋极化态的能谱.结果显示幻数角动量是否出现，主要取决于量子力学对称性、约束势大小及磁场的强度. 关键词：     

半导体量子点激光器研究进展

首先简要地回顾了半导体激光器发展的历史和量子点激光器所特有的优异性能,进而介绍半导体量子点及其三维量子点阵列的制备技术,然后分别讨论了量子点激光器（能带）结构设计思想,实现基态激射时所必须具备的条件和近年来国内外半导体量子点器的研究进展。最后分析讨论了量子点激光器研制中存在的问题和发展趋势。     

半导体量子点的形状对受限激子的影响

在有效质量近似范围内,采用有限深势阱模型,考虑介电受限、计入表面极化效应的情况下,研究了球形、立方形半导体量子点的形状对受限激子的影响．结果表明量子点的形状效应不可忽略. 关键词：     

半导体量子点及其应用(Ⅱ)

理论分析表明，基于三维受限量子点的分离态密度函数的量子器件，以其独特的优异电学、光学性能和极低功耗，在纳米电子学、光电子学，生命科学和量子计算等领域有着极其广泛的应用前景，本文仅就量子点在量子点激光器、量子点红外探测器、单光子光源、单电子器件和量子计算机等方面的应用作一简单的介绍．     

半导体量子点及其应用(Ⅰ)

量子点，又称“人造原子”，它是纳米科学与技术研究的重要组成部分，由于载流子在半导体量子点中受到三维限制而具有的优异性能，构成了量子器件和电路的基础，在未来的纳米电子学、光电子学，光子、量子计算和生命科学等方面有着重要的应用前景，受到人们广泛重视，文章分为Ⅰ、Ⅱ两个部分：第Ⅰ部分介绍了半导体量子点结构的制备和性质；第Ⅱ部分介绍了量子点器件的可能应用。     

半导体量子电子和光电子器件

本阐述了半导体异质结构电子的量子特性,如电子波输运,库仑阻塞效应等,介绍了几种新颖,典型的量子电子器件和量子光电子器件的物理模型和基本原理,这些器件包括了单电子晶体管,共振隧穿二极管,高电子迁移率晶体管,δ掺杂场效应晶体管,量子点元胞自动机,量子阱红外探测器,埋沟异质结半导体激光器,量子级联激光器等,给出了作在半导体量子器件物理方面的最新研究结果。     

半导体量子电子和光电子器件

本文阐述了半导体异质结构电子的量子特性 ,如电子波输运、库仑阻塞效应等。介绍了几种新颖、典型的量子电子器件和量子光电子器件的物理模型和基本原理。这些器件包括了单电子晶体管、共振隧穿二极管、高电子迁移率晶体管、δ掺杂场效应晶体管、量子点元胞自动机、量子阱红外探测器、埋沟异质结半导体激光器、量子级联激光器等。给出了作者在半导体量子器件物理方面的最新研究结果。     

GaN半导体中InN量子点的结构性质

采用第一性原理模拟计算纤锌矿结构GaN半导体中InN量子点的结构性质。建立64和128个原子的超原胞量子点模型,进行结构优化以获得稳定的吻合实际的系统,并模拟分析电子结构。从态密度空间分布图看到不同轴向的量子势阱形状各异、深度不一,说明量子点的限域效应存在着各向异性的特点。c轴极化方向引起量子点结构带边的弯曲形状与传统的量子阱结构不同,使得电子空穴没有发生空间分离,有利于电子空穴的跃迁几率的提高。     

半导体掺杂玻璃的微晶结构及超快弛豫过程

透射电子显微镜(TEM)研究了CdS_0.3,Se_0.7掺杂的半导体微晶玻璃的微晶尺寸分布,微晶尺寸由热处理温度和时间来控制。当微晶尺寸接近或小于激子Bohr半径时,吸收光谱出现亚带结构,带隙能向高能移动,证明了量子尺寸效应。非相干光时间延迟的四波混频(TDFWM-IL)技术测试研究了玻璃的快速弛豫过程。     

Stimulated emission from PbS‐quantum dots in glass matrix

The luminescence behavior of PbS‐quantum dots in glass matrix (PbS:Glass) is investigated. Steady‐state and time‐resolved photoluminescence are applied in a wide range of excitation densities up to pulse energies exceeding 50 µJ/cm². While perfect linear recombination is observed across four orders of magnitude, an additional radiative recombination mechanism emerges at an excitation density of 1 µ J/cm² per pulse at 390 nm excitation and increases the external quantum efficiency. The time constant of this process is ∼20–40 ps. It is ascribed to stimulated emission. No hint to any non‐linear non‐radiative processes such as Auger recombination is observed. Thermal effects, however, still set limits. This is encouraging news for PbS:Glass as potential laser material.     

Inter-dot coupling effects on transport through correlated parallel coupled quantum dots

Transport through symmetric parallel coupled quantum dot system has been studied, using non-equilibrium Green function formalism. The inter-dot tunnelling with on-dot and inter-dot Coulomb repulsion is included. The transmission coefficient and Landaur-Buttiker like current formula are shown in terms of internal states of quantum dots. The effect of inter-dot tunnelling on transport properties has been explored. Results, in intermediate inter-dot coupling regime show signatures of merger of two dots to form a single composite dot and in strong coupling regime the behaviour of the system resembles the two decoupled dots.      

Quantum phase transition and Coulomb blockade effect in triangular quantum dots with interdot capacitive and tunnel couplings

The quantum phase transition and the electronic transport in a triangular quantum dot system are investigated using the numerical renormalization group method.We concentrate on the interplay between the interdot capacitive coupling V and the interdot tunnel coupling t.For small t,three dots form a local spin doublet.As t increases,due to the competition between V and t,there exist two first-order transitions with phase sequence spin-doublet-magnetic frustration phase-orbital spin singlet.When t is absent,the evolutions of the total charge on the dots and the linear conductance are of the typical Coulomb-blockade features with increasing gate voltage.While for sufficient t,the antiferromagnetic spin correlation between dots is enhanced,and the conductance is strongly suppressed for the bonding state is almost doubly occupied.     

Quantum confinement in graphene quantum dots

By performing density functional theory calculations, we studied the quantum confinement in charged graphene quantum dots (GQDs), which is found to be clearly edge and shape dependent. It is found that the excess charges have a large distribution at the edges of the GQD. The resulting energy spectrum shift is very nonuniform and hence the Coulomb diamonds in the charge stability diagram vary irregularly, in good agreement with the observed nonperiodic Coulomb blockade oscillation. We also illustrate that the level statistics of the GQDs can be described by a Gaussian distribution, as predicted for chaotic Dirac billiards.

     

Quantum fluctuations and the Kondo effect in small quantum dots

We consider electron transport through quantum dots with large level spacing and charging energy. At low temperature and strong coupling to the leads, quantum fluctuations and the Kondo effect become important. They show up, e.g., as zero-bias anomalies in the current–voltage characteristics. We use a recently developed diagrammatic technique as well as a new real-time renormalization-group approach to describe charge and spin fluctuations. The latter gives rise to a Kondo-assisted enhancement of the current through the dot as seen in experiments.     

Coulomb blockade in molecular quantum dots

The rate-equation approach is used to describe sequential tunneling through a molecular junction in the Coulomb blockade regime. Such device is composed of molecular quantum dot (with discrete energy levels) coupled with two metallic electrodes via potential barriers. Based on this model, we calculate nonlinear transport characteristics (conductance-voltage and current-voltage dependences) and compare them with the results obtained within a self-consistent field approach. It is shown that the shape of transport characteristics is determined by the combined effect of the electronic structure of molecular quantum dots and by the Coulomb blockade. In particular, the following phenomena are discussed in detail: the suppression of the current at higher voltages, the charging-induced rectification effect, the charging-generated changes of conductance gap and the temperature-induced as well as broadening-generated smoothing of current steps.     

Exchange interaction in InAs nanocrystal quantum dots

The near band-gap level structure in high-quality colloidal InAs nanocrystal quantum dots within the very strong confinement regime is investigated. Size-selective photoluminescence excitation and fluorescence line narrowing measurements reveal a size-dependent splitting between the absorbing and the emitting states. The splitting is assigned to the confinement-enhanced electron–hole exchange interaction. The size dependence of the splitting significantly deviates from the idealized 1/r³scaling law for the exchange splitting. A model incorporating a finite barrier which allows for wavefunction leakage is introduced. The model reproduces the observed 1/r²dependence of the splitting and good agreement with the experimental data is obtained. The smaller barriers for embedded InAs dots grown by molecular-beam epitaxy, are predicted to result in smaller exchange splitting as compared with colloidal dots with a similar number of atoms.     

Eigenstates in quantum dots confined by an inhomogeneous magnetic field

We study the eigenstates in quantum dots in which electrons are confined by the application of an inhomogeneous perpendicular magnetic field, focusing on the effect that the specific details of the shape of confining field has on determining these states. In contrast to the edge state picture established in studies on circular dots, we find that dots with more irregular geometries show a more complicated behavior in the interior of the dot. In particular, we find that certain states show indications of having their amplitude enhanced along particular classical periodic orbits in the interior, a phenomenon known as ‘scarring’.