Chiral-invariant phase space model

The masses of the SU(3)×SU(6) hadrons are calculated in the chiral-invariant phase space (CHIPS) model as a sum of the mean energies of the quarks at a constant temperature T _c with the color-magnetic splitting and the color-electric shift. The masses of hadrons are parametrized by four constants: T _c, m_s, E _CE and A _CM. With the same number of parameters the CHIPS model fits the masses of hadrons better than the classic bag model. The small mass of the d-quark ( m _d = 2.7MeV) is used to prove that the isotopic shifts of hadrons can be explained by the mass difference between the d- and u-quarks. The dibaryon mass is estimated in CHIPS to be 200MeV higher than in the bag model. The prediction for the mass of the α^* cluster is about the same in both models. It is close to 4 ^. m _Δ. Received: 12 December 2001 / Accepted: 23 May 2002     

Dynamical determination of parton and gluon distributions in quantum chromodynamics

Using the dynamical assumption that at low resolution-energies hadrons consist of valence quarks only, we calculate uniquely nucleonic as well as pionic parton and gluon distributions within the framework of QCD, and give analytic expressions for their x- and Q²-dependence. Applications to dilepton and W-boson Drell-Yan production in pN and πN reactions are illustrated and possible applications to high-p_T processes are discussed.     

NiS2-xSex在x=1.00附近的反铁磁量子相变

针对NiS_2-xSe_x系统在x=1.0０附近发生的反铁磁量子相变,制备了一系列NiS_2-xSe_x(x=0.96, 0.98, 1.00, 1.05, 1.10和1.20)多晶样品,对其结构、磁性质和电阻率进行了系统的观测.结果发现：样品磁化率-温度关系呈现典型的强关联电子系统特征;与铜氧化物超导体相类似,它们的电阻率-温度关系在很宽的温 关键词： 量子相变 反铁磁自旋涨落 2-xSe_x体系')" href="#">NiS_2-xSe_x体系     

Single Particle Distributions from Veneziano Amplitudes II

The x- and p_⟂²-dependence of the distribution function for the inclusive reaction A + B → C + anything has been investigated for some typical cases using the dual six point function in the tree approximation as a model for T₃₃. It is found that the form the x-distribution depends critically on the trajectory intercepts in the AC̄ and BC̄ channels, respectively. The p_⟂²-dependence is nearly exponential for large x. For small x-values a steeper behaviour in the small p_⟂² region is obtained which is especially pronounced for small masses of the observed particles. Diagrams with twists contributing to the distribution function for inclusive reactions with neutral pions lead to oscillations and dips near the nonsense wrong signature points of the AC̄ and BC̄ channel trajectories.     

Co(S1-xSex)2系统中的铁磁量子相变

针对Co(S_1-xSe_x)₂系统在x=0.11附近发生的铁磁金属到顺磁金属相变,制备了一系列不同Se替代浓度的多晶样品.通过对其结构和电阻率-温度ρ(T)关系的系统观测,结果发现,样品铁磁相变温度T_C随着Se替代浓度x值的增加,以(1-x)^1/2关系单调下降,其二级铁磁相变转变为一级相变 关键词： 量子相变 自旋量子涨落 1-xSe_x)₂')" href="#">Co(S_1-xSe_x)₂     

Phase diagram for three-dimensional correlated site-bond percolation

The Coniglio-Stanley-Klein model is a random bond percolation process between the occupied sites of a lattice gas in thermal equilibrium. Our Monte Carlo simulation for 40³ and 60³ simple cubic lattices determines at which bond thresholdp _Bc , as a function of temperatureT and concentrationx of occupied sites, an infinite network of active bonds connects occupied sites. The curvesp _Bc (x, T) depend only slightly onT whereas they cross over if plotted as a function of the field conjugate tox. Except close toT _c we find 1/p _Bc to be approximated well by a linear function ofx, in the whole interval between the thresholdx _c (T) of interacting site percolation atp _Bc =1 and the random bond percolation limitx=1 atp _Bc =0.248±0.001. Thisx _c (T) varied between 0.22 forT=0.96 (coexistence curve) and 0.3117±0.0003 forT= (random site percolation). At the critical point (T=T andx=1/2) we confirmed quite accurately the predictionp _Bc =1-exp(–2J/k _B T _c ) of Coniglio and Klein. As a byproduct we found 0.89±0.01 for the critical exponent of the correlation length in random percolation.     

Structure, ferroelectric and piezoelectric properties of?(Bi0.98?xLa0.02Na1?x)0.5BaxTiO3 lead-free ceramics

Lead-free (Bi_0.98−x La_0.02Na_1−x )_0.5Ba _x TiO₃ ceramics have been prepared by an ordinary sintering technique and their structure, ferroelectric and piezoelectric properties have been studied. The results of X-ray diffraction show that La²⁺ and Ba²⁺ diffuse into the Bi_0.5Na_0.5TiO₃ lattices to form a new solid solution with a pure perovskite structure, and a morphotropic phase boundary (MPB) exists at 0.04<x<0.10. Compared with pure Bi_0.5Na_0.5TiO₃ ceramics, the (Bi_0.98−x La_0.02Na_1−x )_0.5Ba _x TiO₃ ceramics possess much smaller coercive field E _c and larger remanent polarization P _r. Because of the low E _c (3.38 kV/mm), large P _r (46.2 μC/cm²) and the formation of the MPB of rhombohedral and tetragonal phases, the piezoelectric properties of the ceramics are significantly enhanced at x=0.06: d ₃₃=181 pC/N and k _p=36.3%. The depolarization temperature T _d reaches a minimum value near the MPB. The ceramics exhibit relaxor characteristic, which is probably a result from the cation disordering in the 12-fold coordination sites. The temperature dependences of the ferroelectric and dielectric properties suggest that the ceramics may contain both polar and non-polar regions at the temperatures above T _d.     

Nonlinear magnetic response in ruthenocuprates

We have performed an investigation of the nonlinear magnetic response in ruthenocuprates. A negative, diverging-like peak at the main magnetic transition T_N in RuSr₂ RECu₂O₈ (RE = Gd, Y) indicates a possible canted antiferromagnetic order. Another well defined feature above T_N points to a blocking of superparamagnetic particles through the T^-3 dependence of the third harmonic at higher temperatures. Below T_N a nondiverging peak appears, which is strongly affected by the addition of 10% of Cu ions in the RuO₂ planes. In RuSr₂ RE _2-xCe_xCu₂O₁₀ the main magnetic transition T_M is accompanied by two characteristic temperatures in the third harmonic of the ac susceptibility, in agreement with recent studies from μSR and M?ssbauer spectroscopy. We find that the spin-spin correlation temperature is the same in both families of ruthenocuprates.     

On the perturbative stability of the QCD predictions for the ratio R=FL/FT in heavy-quark leptoproduction

We analyze the perturbative and parametric stability of the QCD predictions for the Callan–Gross ratio, R(x,Q ²)=F _L /F _T , in heavy-quark leptoproduction. We consider the radiative corrections to the dominant photon–gluon fusion mechanism. In various kinematic regions, the following contributions are investigated: exact NLO results at low and moderate Q ²≲m ², asymptotic NLO predictions at high Q ²≫m ², and both NLO and NNLO soft-gluon (or threshold) corrections at large Bjorken variable x. Our analysis shows that large radiative corrections to the structure functions F _T (x,Q ²) and F _L (x,Q ²) cancel each other in their ratio R(x,Q ²) with good accuracy. As a result, the NLO contributions to the Callan–Gross ratio are less than 10% in a wide region of the variables x and Q ². We provide compact LO predictions for R(x,Q ²) in the case of low x ≪1. A simple formula connecting the high-energy behavior of the Callan–Gross ratio and low-x asymptotics of the gluon density is derived. It is shown that the obtained hadron-level predictions for R(x→0,Q ²) are stable under the DGLAP evolution of the gluon distribution function. Our analytic results simplify the extraction of the structure functions F ₂ ^c (x,Q ²) and F ₂ ^b (x,Q ²) from measurements of the corresponding reduced cross sections, in particular at DESY HERA.     

Quark-hadron duality in electron-pion scattering

We explore the relationship between exclusive and inclusive electromagnetic scattering from the pion, focusing on the transition region at intermediate Q². Combining Drell-Yan data on the leading twist quark distribution in the pion with a model for the resonance region at large x, we calculate QCD moments of the pion structure function over a range of Q², and quantify the role of higher twist corrections. Using a parameterization of the pion elastic form factor and phenomenological models for the π↦ρ transition form factor, we further test the extent to which local duality may be valid for the pion. Received: 10 February 2003 / Accepted: 12 March 2003 / Published online: 27 May 2003     

Temporal correlations and persistence in the kinetic Ising model: the role of temperature

We study the statistical properties of the sum S _t = dt'σ _t', that is the difference of time spent positive or negative by the spin σ _t, located at a given site of a D-dimensional Ising model evolving under Glauber dynamics from a random initial configuration. We investigate the distribution of S_t and the first-passage statistics (persistence) of this quantity. We discuss successively the three regimes of high temperature ( T > T _c), criticality ( T = T _c), and low temperature ( T < T _c). We discuss in particular the question of the temperature dependence of the persistence exponent , as well as that of the spectrum of exponents (x), in the low temperature phase. The probability that the temporal mean S _t/t was always larger than the equilibrium magnetization is found to decay as t ^{- - ?}. This yields a numerical determination of the persistence exponent in the whole low temperature phase, in two dimensions, and above the roughening transition, in the low-temperature phase of the three-dimensional Ising model. Received 4 December 2000     

The transverse momentum distribution of Drell-Yan pairs in perturbation theory

We calculate, in lowest-order perturbation theory, the cumulative transverse momentum cross section for the Drell-Yan process in the regime m²?p_T²?q², keeping both single and double logarithmic terms. We verify that this distribution takes the proposed form of a product of structure functions evaluated at p_T² and the square of the Sudakov form factor S(p_T²/q²), evaluated to subleading order.     

Sr2Fe1－xCoxMoO6体系中Co的元素替代效应

在成功制备具有双钙钛矿结构Sr₂Fe_1-xCo_xMoO₆系列样品的基础上，对其结构、输运性质和磁性质进行了系统研究.结果发现，随着Co替代浓度x值的增加，样品的电阻率-温度关系由半金属行为转变为半导体行为，其室温电阻率从3.9×10^-5Ω·cm增大到6.0×10^-1Ω·cm；样品由亚铁磁体转变成反铁磁体，其磁相变温度T_N值也随之下降; Co对Fe的部分替代使其磁电阻效应受到抑制.基于对其电子结构的分析，其磁电阻效应的起源以及Co的元素替代效应也在文中进行了讨论. 关键词： 双钙钛矿结构 2FeMoO₆')" href="#">Sr₂FeMoO₆ 磁电阻     

Electronic structure of thin film iron-tetracyanoethylene: Fe(TCNE)<Subscript><Emphasis Type="Italic">x</Emphasis></Subscript>

Thin film iron-tetracyanoethylene Fe(TCNE) _x , x∼2, as determined by photoelectron spectroscopy, was grown in situ under ultra-high vacuum conditions using a recently developed physical vapor deposition-based technique for fabrication of oxygen- and precursor-free organic-based molecular magnets. Photoelectron spectroscopy results show no spurious trace elements in the films, and the iron is of Fe²⁺ valency. The highest occupied molecular orbital of Fe(TCNE) _x is located at ∼1.7 eV vs. Fermi level and is derived mainly from the TCNE⁻ singly occupied molecular orbital according to photoelectron spectroscopy and resonant photoelectron spectroscopy results. The Fe(3d)-derived states appear at higher binding energy, ∼4.5 eV, which is in contrast to V(TCNE)₂ where the highest occupied molecular orbital is mainly derived from V(3d) states. Fitting ligand field multiplet and charge transfer multiplet calculations to the Fe L-edge near edge X-ray absorption fine structure spectrum yields a high-spin Fe²⁺ (3d⁶) configuration with a crystal field parameter 10Dq∼0.6 eV for the Fe(TCNE) _x system. We propose that the significantly weaker Fe-TCNE ligand interaction as compared to the room temperature magnet V(TCNE)₂ (10Dq∼2.3 eV) is a strongly contributing factor to the substantially lower magnetic ordering temperature (T _C ) seen for Fe(TCNE) _x -type magnets.     

Impurity distribution and electrical characteristics of boron-doped Si1−x Ge x /Si p +/N heterojunction diodes produced using pulsed UV-laser-induced epitaxy and Gas-immersion laser doping

A two-step pulsed UV-laser process which independently controls the metallurgical and electrical junction depth of a Si_1–x Ge _x /Si heterojunction diode has been implemented. Pulsed Laser-Induced Epitaxy (PLIE) combined with Gas-immersion Laser Doping (GILD) are used to fabricate boron-doped heteroepitaxial p ⁺/N Si_1–x Ge _x /Si layers and diodes. Borontrifluoride is used as the gaseous dopant source in the GILD process step. Boron incorporation and activation are investigated as a function of laser energy fluence and the number of laser pulses using SIMS and Halleffect measurements. The dose of incorporated dopant is on the order of 10¹³ cm^–2 per pulse. The B profiles obtained are flat except for a peak at the interface resulting from segregation effects. The B and Ge distributions are compared with shifts in the turn-on voltage of p ⁺/N Si_1–x /Si heterojunction diodes produced by the process. The GILD/PLIE process is spatially selective with the resulting diodes fabricated being quasiplanar. Hole mobilities in the heavily doped Si_1–x Ge _x films are found to be slightly lower than in comparable Si films.Presently at the Oregon Graduate Institute, Beaverton, OR 97006, USA     

Formation of charmonium states in heavy-ion collisions and thermalization of charm

We examine the possibility to utilize in-medium charmonium formation in heavy-ion interactions at collider energy as a probe of the properties of the medium. This is possible because the formation process involves recombination of charm quarks which imprints a signal on the resulting normalized transverse momentum distribution containing information about the momentum distribution of the quarks. We have contrasted the transverse momentum spectra of J/ψ, characterized by 〈p _T ²〉, which result from the formation process in which the charm quark distributions are taken at opposite limits with regard to thermalization in the medium. The first uses charm quark distributions unchanged from their initial production in a pQCD process, appropriate if their interaction with the medium is negligible. The second uses charm quark distributions which are in complete thermal equilibrium with the transversely expanding medium, appropriate if a very strong interaction between charm quarks and medium exists. We find that the resulting 〈p _T ²〉 of the formed J/ψ should allow one to differentiate between these extremes, and that this differentiation is not sensitive to variations in the detailed dynamics of in-medium formation. We include a comparison of predictions of this model with preliminary PHENIX measurements, which indicates compatibility with a substantial fraction of in-medium formation.     

Double metal-insulator peaks and effect of Sm substitution on magnetic and transport properties of hole-doped La0.85Ag0.15MnO3

La_0.85−xSm_xAg_0.15MnO₃ (x=0−0.2) ceramics were prepared using the conventional solid-state synthesis method to investigate the effect of Sm³⁺ substitution on magnetic and electrical transport properties. Magnetic susceptibility versus temperature measurements showed all samples exhibit ferromagnetic to paramagnetic transition with Curie temperature, T_c decreasing from 283 K (x=0) to 164 K (x=0.2) with increasing Sm³⁺. The observed slope in susceptibility, χ′ versus temperature curves below T_c indicates the possible presence of FM and AFM phases in the metallic region. In addition, a deviation from the Curie-Weiss law above T_c in 1/χ′ versus T curves indicates the existence of a Griffith's phase in the x=0.05−0.2 samples due to the Sm³⁺ ion substitution. The Griffith temperature, T_G was found to decrease from 295 K (x=0.05) to 229 K (x=0.2). Electrical resistivity measurements of the samples in zero field showed transition from metallic behavior to insulating behavior as the temperature was increased. For x=0, two metal-insulator, MI transition peaks were observed at T_p1=282 K and at T_p2=250 K. Both peaks shifted to lower temperatures with the increase in Sm³⁺. The relative resistivity of the first peak to the second peak decreases with increasing Sm³⁺ for x>0.05 while at x=0.2 the T_p1 peak was strongly suppressed. Magnetoresistance, MR was observed to weaken with Sm³⁺ substitution. The metallic region of the ρ(T) curve of the x=0−0.15 samples was fitted to the model of electron-electron and electron-magnon scattering while the insulating region was fitted to the variable range hopping, VRH model. The resistivity behavior indicated that the substitution of Sm³⁺ weakened the double exchange process and enhanced the Jahn-Teller effect. Our results indicated that the T_p1 peak is strongly related to the double-exchange mechanism while the T_p2 peak is suggested to originate from magnetic inhomogeneity.     

Comparing the physical properties of Pr/Gd and Pr/Ce substitutions in Ru(Gd<Subscript>1.5</Subscript>Ce<Subscript>0.5</Subscript>)Sr<Subscript>2</Subscript>Cu<Subscript>2</Subscript>O<Subscript>10−<Emphasis Type="Italic">δ</Emphasis></Subscript>

We have compared the electrical and magnetic properties of Ru(Gd_1.5−x Pr _x )Ce_0.5Sr₂Cu₂O_10−δ (Pr/Gd samples) with x = 0.0, 0.01, 0.03, 0.033, 0.035, 0.04, 0.05, 0.06, 0.1 and RuGd_1.5(Ce_0.5−x Pr _x ) Sr₂ Cu₂O_10−δ (Pr/Ce samples) with x = 0.0, 0.01, 0.03, 0.05, 0.08, 0.1, 0.15, 0.2 prepared by the standard solid-state reaction technique. We obtained the XRD patterns for different samples with various x. The lattice parameters versus x for different substitutions have been obtained from Rietveld analysis. To determine how the magnetic and superconducting properties of these layered cuprate systems can be affected by Pr substitution, the resistivity, and magnetoresistivity, with H _ext varying from 0.0 to 15 kOe, have been measured at various temperatures. Superconducting transition temperature T _c and magnetic transition T _irr , have been obtained through resistivity and ac susceptibility measurements. The T _c suppression due to Pr/Gd and Pr/Ce substitutions show competition between pair breaking by magnetic impurities, hole doping due to different valances of ions, difference in ionic radii, and oxygen stoichiometry. Pr/Gd substitution suppresses superconductivity more rapidly than for Pr/Ce, showing that the effect of hole doping and magnetic impurity pair breaking is stronger than the difference in ionic radii. In Pr/Gd substitution, the small difference between the ionic radii of Pr^3+,4+ and Gd³⁺, and absorption of more oxygen due to the higher valence of Pr with respect to Gd, decreases the mean Ru-Ru distance, and as a result, the magnetic exchange interaction becomes stronger with the increase of x. However, Pr/Ce substitution has the opposite effect. The magnetic parameters such as H _c , obtained through magnetization measurements versus applied magnetic field isotherm at 77 K and room temperatures, become stronger with x in Pr/Gd and weaker with x in Pr/Ce substitution.     

Incorporation of Sn into epitaxial GaAs grown from the liquid phase

The incorporation of Sn into LPE GaAs was studied as a function of the atomic fractionx _Sn ^l of Sn in the liquid (1.6×10⁻⁴≤x _Sn ^l ≤0.54), the growth temperatureT _K and the cooling rate α. The diffusion coefficient of As in Ga for moderate Sn-doping was deduced from the growth velocities to beD _As (760° C)=(3.3±1.0)×10⁻⁵ cm²/s. The epitaxial layers were analyzed after van der Pauw with special emphasis on the sources of experimental error. With the aid of current mobility theories the concentrations of the ionized donors and acceptors were derived. From their dependence onx _Sn ^l , on α and onT _K combined with the Schottky-barrier model of Sn incorporation it can be concluded that the melt and the growing crystal surface were in thermal equilibrium. The diffusion coefficient of Sn in GaAs is about 8×10⁻¹⁴ cm²/s at 760° C. The distribution coefficient for Sn increases from 4.4×10⁻⁵ to 12.3×10⁻⁵ in the temperature range from 690 to 800° C. The total Sn incorporationx _Sn ^s was measured using the atomic absorption spectroscopy for the first time down tox _Sn ^s =10¹⁷/cm³. From these data it can be concluded that up tox _Sn ^l =0.54 the dopant Sn is incorporated as donor and as acceptor only and that within the experimental scatter there is no indication of incorporation as a neutral species.     

The glassy state of the amorphous V2O5–NiO–TeO2 samples

The glass transition temperature dependence to heating rate and therefore the activation energy (ΔH^?) of the glass transition of (60-x)V₂O₅–xNiO–40TeO₂ oxide glasses with 0≤x≤20 (in mol%) were investigated at heating rates φ (=3 6, 9, 10 and 12 K/min) using differential scanning calorimetry (DSC). The heating rate dependence of T_g was used to investigate the applicability of different theoretical models describing the glass transition. Using the application of Moynihan and Kissinger et al. models to the present data, different values of (ΔH^?) at each different heating-rate regions were obtained. The fragility parameter (m=ΔH^?/R T_g) was ∼24.98 for x=10 mol%, suggesting that this glass may be considered as a rather strong glass (fragility index m∼>20 is an indication of fragile glass). Also the compositional dependence of T_g and ΔH^? was investigated.