Microstructure and growth rate of chemical vapour deposited TiN films in a vertical cold wall reactor

TiN films were grown on SUS304 substrates heated by an induction furnace in a vertical cold wall reactor. Scanning electron microscopy, transmission electron microscopy and X-ray diffraction were used to characterize the microstructures of films obtained at different deposition conditions (temperature, gas flow rate and gas composition). Film structures obtained in the present vertical reactor had the following features compared with those in the tubular reactor: (1) Abnormally grown “star-shaped” crystals were observed on the surfaces of films deposited in the following ranges of total gas flow rate (Q_T), temperature (T) and partial pressures (P): 9.0×10⁻⁶ ≤ Q_T ≤ 1.6×10⁻⁵ m³ s⁻¹, 1223 ≤ T ≤ 1273 K, 0.92 ≤ P_TiCl4 ≤ 6.18 kPa, P_H2 = P_N2. The matrix grains were responsible for (211) preferred orientation. (2) Surface morphologies did not vary so much with P_TiCl4. On the other hand, a drastic change was brought about by adding HCl to the source gas, i.e., plate-shaped crystals dominated and the large “star-shaped” crystals were no longer present. (3) The apparent activation energy for deposition reaction was 230 kJ/mol (1173 ≤ T ≤ 1273 K) and 76.5 kJ/mol (1273 ≤ T ≤ 1373 K) at P_TiCl4 = 2.43 kPa and P_H2 = P_N2 = 49.45 kPa.     

A geometric and analytic approach to the process of melt vitrification. I. Thermodynamic treatment

By using simple geometric concepts, general thermodynamic dependences governing the process of vitrification are derived. The thermodynamic driving forces of crystallization, ΔG_f,c(T), and stabilization, ΔG_st(T), melts and glasses are considered in the entire temperature interval from temperatures below the glass transition temperature, T_g, to temperatures high above the melting point, T_m. It is show that at large deviations from T_g the temperature dependence of the driving force for stabilization, ΔG_st(T), is non-symmetric and expressions derived by a Taylor expansion become a poor approximation. By using an appropriate thermodynamic model, a more general expression for ΔG_st(T) is obtained and the thermodynamic basis for the existence of superheated glasses is established. The thermodynamic instability of glasses below and above T_g, i.e., of supercooled and superheated glasses is discussed.     

Laser-induced structural transformation of AsxSe1-x thin amorphous films

The changes in the optical and holographic recording properties of amorphous As_xSe_1-x films with 0 ≤ x ≤ 0.2 under laser irradiation have been measured. The dependence of the transmissivity and diffraction efficiency on the irradiation energy density shows two qualitatively different regions. Below an energy density threshold, E_th, only small changes in the local structure of the system can be detected. In this low-E region, the transmissivity varies reversibly with exposure. Qualitative explanation of the observed behavior may be based on associating such with alteration of deep defect states. Above E_th, the changes were attributed to crystallization transformation. The Raman spectra reveal the progressive transformation of the system from amorphous into the crystalline phase under laser irradiation.     

Thermal stability and crystallization kinetics of new As–Ge–Se–Sb glasses

Thermal stability and crystallization kinetics of As₁₄Ge₁₄Se_72−xSb_x (where x = 3, 6, 9, 12 and 15 at.%) glasses are studied by the differential scanning calorimetry. The values of the glass transition temperature (T_g) and the peak temperature of crystallization (T_p) are found to be dependent on heating rate and antimony content. From the heating rate dependence of T_g and T_p the values of the activation energy for glass transition (E_t) and the activation energy for crystallization (E_c) are evaluated and their composition dependence discussed. Crystallization studies have been made under non-isothermal conditions with the samples heated at several uniform rates. Using a recent analysis developed for non-isothermal crystallization studies, information on some aspects of the crystallization process has been obtained. The stability calculations emphasized that the thermal stability decreases with increasing the Sb content.     

Atomic structure of Al55(Cr1−xMnx)15Si30 metallic glasses observed by neutron diffraction

An atomic structure of Al₅₅(Cr_1−xMn_x)₁₅Si₃₀ (x = 0, 0.49,1) metallic glasses was studied by neutron diffraction. An advantage of the neutron diffraction technique was fully exploited by utilizing the negative scattering length of Mn to form a neutron zero scattering ‘alloy’ for the component Cr_0.51Mn_0.49 in this quaternary Al---(Cr, Mn)---Si alloy. This allows the atomic distribution of the resulting quasibinary Al---Si metallic glass to be derived directly. Moreover, the (Al, Si)---TM (TM = Mn, Cr) and TM---TM pair correlations were also extracted by taking appropriate linear combinations of the atomic structures for the Al₅₅(Cr_1−xMn_x)₁₅Si₃₀ (x = 0, 0.49, 1) metallic glasses. A sharp first peak in the (Al,Si) ---TM pair correlations thus obtained led to the conclusion that a strong attractive interaction exists between (Al, Si) and TM atoms and, hence, that the presence of the TM atoms is responsible for the formation of an amorphous phase.     

Mössbauer and X-ray studies of the kinetics of crystallization in glassy Fe---B alloys

X-ray crystallography and Mössbauer spectroscopy were used to investigate the crystallization of the amorphous Fe_100−xB_x alloys, 14 x 20 annealed at 615 K. As a result of the heat treatment, the formation of crystalline -Fe and Fe₃B were observed. Variations in the values of the isomer shift and the orientation of the axis of magnetization indicate changes in the iron-boron bonding and the local atomic arrangement.

Formation of the -Fe phase was determined as a function of boron concentration and annealing time. Crystallization rates of that phase were observed to be dependent on boron concentration and on the annealing time. The average hyperfine field of the untreated samples was observed to increase till x = 17 after which it decreased. This is explained in terms of the Invar behavior of Fe₈₃B₁₇. The anomalous crystallization of Fe₈₆B₁₄ is proposed to be due to the existence of interstitial-like boron sites in a near bcc short range atomic structure.     

Relationship between T0, Tg and their pressure dependence for supercooled liquids

We show that simple expressions can be derived from the Vogel–Fulcher–Tammann (VFT) law relating the glass transition temperature T_g, the VFT temperature T₀, their pressure derivatives, the steepness index of the ‘Angell plot’ and the strength parameter D of the VFT equation, in good agreement with experimental data. In the same way one can describe the dependence of the dT_g/dP on the relaxation time τ_g chosen to define the temperature T_g. Thus, this procedure allows a consistent rescaling and comparison of pressure dependent parameters obtained from different experiments and simulations.     

Internal friction and structural relaxation of amorphous Fe---Mn---P alloys

Measurements of internal friction and dynamic modulus have been carried out on amorphous Fe_83−xMn_xP₁₇(x=9,12, or 15) alloys in the temperature range 300–800 K, as a function of applied frequency, by a forced oscillation method. The characteristic transition temperatures and activation energies for crystallization were measured by differential scanning calorimetry (DSC). The viscous flow of the sample was measured using a thermomechanical analyzer (TMA) under continuous heating conditions. Internal friction increases rapidly with temperature starting from 450 K for 0.1 Hz, 474 K for 0.5 Hz, 486 K for 1.0 Hz, 511 K for 5 Hz, and 525 K for 10 Hz for the Fe₇₄Mn₉P₁₇ specimen. It was found that the internal friction peak temperature was very closely the same as the steady state viscous flow temperature from the TMA curves for Fe₇₄Mn₉P₁₇ and Fe₆₈Mn₁₅P₁₇ but not for Fe₇₁Mn₁₂P₁₇. It is assumed that the internal friction peak does not correspond to the glass transition temperature or crystallization temperature for these alloy systems. Two maxima in the free-volume fraction and two minima in the viscosity were also found for the samples which exhibit a ‘mid-contraction’ in their TMA displacement curves. The internal friction peak occurred at the steady state viscous flow temperature. This occurrence means that the origin of the internal friction peak is related to the viscous flow behavior and free-volume fluctuation for this alloy system.     

Glass-forming ability versus stability of silicate glasses. II. Theoretical demonstration

Possible relationships between measures of glass stability (GS) against devitrification on heating (evaluated by the Hrubÿ parameter K_H=(T_c^h−T_g)/(T_m−T_c^h), and the parameter K_w=(T_c^h−T_g)/T_m) and a criterion of glass-forming ability (GFA) – the critical cooling rate – were investigated by computing non-isothermal crystallization for typical values of the main quantities that control crystal nucleation and growth in silicate glasses. We limit these quantities to one thermodynamic parameter – the melting entropy (ΔS_m) and two kinetic parameters that control the viscosity (B and T₀ in the Vogel–Fulcher–Tamman equation or T_g and in Avramov’s equation). The effect of heterogeneous nucleation and, in particular, the possible role of the surface as active substrate is tested. The results presented herein demonstrate that GS and GFA are indeed related concepts.     

SIMS study of the concentration of dopants in LPCVD silicon thin films

Measurements of solid phase dopant concentration (S) of LPCVD Si thin films as a function of substrate temperature (T_s = 500−640 ° C) and gas phase doping ratio (R = 1 × 10⁻⁵ −4 × 10⁻²) by SIMS indicate different behaviors of P and B in the films. A linear relation S = b(T)R is observed for B-doped film with b(T) varying from 4 to 50 depending on T_s. Boron-doped microcrystalline film has a higher doping efficiency than that of P-doped ones.     

Structural transformation of the TiO2---SiO2 system gel during heat-treatment

The gel formation of the (100-x)TiO₂·xSiO₂ (x = 0–10 mol%) system has been studied. The progressive elimination of residues was followed by DTA and TGA curves. DTA curves showed that the formation of anatase during heat treatment could be sensibly slowed down with the increase of SiO₂. The relationship between the gel composition and crystallization temperature of anatase has been systematically investigated. The X-ray diffraction spectra demonstrated that the crystallization temperature of anatase is 400°C for TiO₂ gel and 430°C for 90TiO₂ - 10SiO₂ gel. The infrared absorption spectra were used to follow the structural transformation of gels heat-treated at different temperatures. With the help of EPR it is evident that titanium ions exist only in tetravalence.     

Characteristic crystal growth from amorphous WO3 film by vacuum heating

Selective growth of WO₂, W and WO_3−x crystals from amorphous WO₃ film by vacuum heating at 400–900°C was clarified. The grown WO_3−x crystals were incommensurate structure based on crystallographic share structure. The growth process of WO₂ crystal in the amorphous film was directly observed at high temperature in the electron microscope. The growth front of the WO₂ crystal consumes WO₃ microcrystallites with various orientations. The growth speed of the WO₂ depended on WO₃ microcrystallites orientation. The origin of the wavy growth front of WO₂ was due to an orientation dependence of the WO₃ microcrystallites.     

The structural relaxation and glass transition of La---Al---Ni and Zr---Al---Cu amorphous alloys with a significant supercooled liquid region

An amorphous phase with a wide supercooled liquid region, > 50 K, was found to form over wide composition ranges in the La---Al---Ni and Zr---Al---Cu systems. The largest values for the temperature span between the crystallization temperature, T_x, and the glass transition temperature, T_g, ΔT_x(-T_x−T_g), are 69 K for La₅₅ Al₂₅Ni₂₀ and 88 K for Zr₆₅Al_7.5Cu_27.5. The structural relaxation behavior on annealing was examined for the two amorphous alloys with the largest ΔT_x values. The magnitude of the structural relaxation increases gradually with increasing annealing temperature, T_a, and then rapidly in the T_a range slightly below T_g and decreases significantly on annealing T_g. The rapid increase in the magnitude of the structural relaxation on annealing near T_g is due to the glass transition. The single-stage structural relaxation indicates that there is no distinct difference in relaxation times (atomic bonding forces) between the constituent atoms in the two metal-metal-type amorphous alloys. The existence of an optimum bonding state is thought to cause the wide supercooled liquid region for the two amorphous alloys.     

XAS study of lanthanum coordination environments in glasses of the system K2O---SiO2---La2O3

The La L₁ and L₃ XANES and L₃ EXAFS have been investigated for the series of glasses 10K₂O---50SiO₂---x La₂O₃ (x = 1, 5, 10) and (10 − x)K₂O---40SiO₂−(x/3)La₂O₃ (x = 7.5, 5, 2.5) and model compounds La₂O₃, LaAlO₃, LaPO₄, La₂NiO₄, La₂CuO₄ and La(OH)₃. An edge resonance at 25 eV above the L₁ edge in the glass spectra is concentration-dependent, decreasing in intensity with increasing lanthanum concentration. The 2s → nd forbidden transition increases with La₂O₃ concentration, indicating a reduction in the ‘average’ site symmetry of the first coordination shell of La. Mapping _X(k) space, which is a new and promising technique, was employed to extract bond distance, coordination number and thermal parameters from the EXAFS. By this method, one calculates the complete _X(k) space a function of all physically reasonable values of the adjusted parameters in all possible combinations. The advantage in this method is the assurance of a global minimum. Bond lengths were comparable to those obtained by Fourier transforming the phase corrected EXAFS. The values are 2.42 Å (± 0.03 Å) for La---O. The coordination numbers (N ≤ 7 ± 1.5) were derived by mapping and comparison to the published structures for other La compounds. _X(k) mapping is compared with least-squares fitting the data, and the correlation between the Debye-Waller factor and coordination number is also discussed.     

Physical properties of amorphous Ge20Sb25−xBixSe55 thin films

The influence of substitution of Sb atoms by Bi atoms on the electrical and optical properties of thin films of the Ge₂₀Sb_25−xBi_xSe₅₅ [0x15] system are reported. Results of dc conductivity and thermoelectric power measurements between 150 and 450 K show that the Ge---Sb---Se system is chemically modified by addition of large concentrations of Bi atoms between X=5 and X=10 at.%). A transition from p-type for Sb-doped to n-type for Bi-doped films and a decrease of resistivity is observed. The absorption edge shifts to shorter wavelength, thereby decreasing the optical band gap of the system. Compositional dependences of electrical conductivity, thermoelectric power, and the appearance of n-type conduction are discussed from the stand point of chemical bonds formed in the films and related to the defect states produced due to incorporation of Bi atoms in high concentrations. The coexistence of band and hopping conduction is proposed. The ac conductivity in 0.1–10.0 kHz frequency and 150–450 K temperature range was found to obey a power law σ(ω, T) = Aω^s. The results were interpreted in terms of Elliott's theory, which assumes correlated barrier hopping (CBH) between the charged defect centres. It was found that computed results from the CBH model and experimental one are qualitative agreement for the present materials.     

Structural and thermal properties of some tellurite glasses

Tellurium oxide glasses were prepared by the hammer and anvil technique. The glass systems are (0.85TeO₂ + 0.15Z), where Z = K₂O, TiO₂, V₂O₅, MnO, Fe₂O₃, CoO, NiO or CuO. A second group is a ternary system 0.85TeO₂+(0.15 − x)TiO₂ + xFe₂O₃) with x=0.0, 0.05, 0.1, 0.15 mol. X-ray diffraction, infrared spectroscopy and differential thermal analysis measurements were carried out. The present study showed the different glass-forming groups, the glass transition and crystallization temperatures as well as the crystallization processes.     

The effects of As and Te on the crystallization and optical gaps of selenium

Glasses with compositions Te_xSe_100−x (0x25 at.%), As_ySe_100−y (0y40 at.%) and As₂Te_zSe_98−z (0z25 at.%) were prepared. The effects of the additives As and Te on the crystallization behaviour and optical gaps of selenium were studied. The relationship between the above properties and the chemical bond nature of the glass constituents is discussed. Materials with long lifetime and high sensitivity can be obtained by the addition of certain amounts of As and Te into Se.     

Correlation between interfacial structure and c-axis-orientation of LiNbO3 films grown on Si and SiO2 by electron cyclotron resonance plasma sputtering

Thin films of crystalline lithium niobate (LN) grown on Si(1 0 0) and SiO₂ substrates by electron cyclotron resonance plasma sputtering exhibit distinct interfacial structures that strongly affect the orientation of respective films. Growth at 460–600 °C on the Si(1 0 0) surface produced columnar domains of LiNbO₃ with well-oriented c-axes, i.e., normal to the surface. When the SiO₂ substrate was similarly exposed to plasma at temperatures above 500 °C, however, increased diffusion of Li and Nb atoms into the SiO₂ film was seen and this led to an LN–SiO₂ alloy interface in which crystal-axis orientations were randomized. This problem was solved by solid-phase crystallization of the deposited film of amorphous LN; the degree of c-axis orientation was then immune to the choice of substrate material.     

Synthesis and characterization of type-II textured tungsten disulfide thin films by vdWR process with Pb interfacial layer as texture promoter

The growth of type-II textured tungsten disulfide (WS₂) thin films by solid state reaction between the spray deposited WO₃ and gaseous sulfur vapors with Pb interfacial layer has been studied. X-ray diffraction (XRD) technique is used to measure the degree of preferred orientation ‘S’ and texture of WS₂ films. Scanning electron microscopy (SEM) and transmission electron microscopy techniques have been used to examine the microstructure and morphology. The electronic structure and chemical composition were studied using X-ray photoelectron spectroscopy (XPS). The use of Pb interfacial layer for the promotion of type-II texture in WS₂ thin films is successfully demonstrated. The presence of (0 0 3 l), (where l=1, 2, 3, …) family of planes in the XRD pattern indicates the strong type-II texture of WS₂ thin films. The crystallites exhibit rhombohedral (3R) structure. The large value of ‘S’ (1086) prompts the high degree of preferred orientation as well. The stratum of crystallites with their basal plane parallel to the substrate surface is seen in the SEM image. The EDS and XPS analyses confirm the tungsten to sulfur atomic ratio as 1:1.75. We purport that Pb interfacial layer enhances type-II texture of WS₂ thin films greatly.     

Elastic properties of GexAsySe100−x−y glasses

The elastic properties of Ge_xAs_ySe_100−x−y (0x30; 10y40) glasses have been studied. The results were analyzed in terms of the dependence on the theoretical mean coordination number (mean number of covalent bonds per atom) m (m=2+(2x+y)×0.01). Three ranges of m (2.1m2.51, 2.51<m2.78, 2.78<m3) were revealed, where different dependencies of elastic moduli (Young’s modulus, shear modulus) and Poisson’s ratio of glasses on m were observed.