超薄金膜-发光层-光子晶体三明治结构的光学特性及荧光调制

结合垂直沉积自组装法和旋涂法制备了由超薄金膜、发光层和三维光子晶体组成的三明治结构。通过对样品的衰减全反射曲线进行测量和分析,发现该三明治结构的光学特性取决于光子晶体的质量,高质量三维光子晶体使得三明治结构的衰减全反射曲线在48°和63°两个位置出现了反射波谷,而低质量三维光子晶体的三明治结构的反射波谷完全消失。与薄金膜-发光层双层结构相比,该三明治结构的荧光特性曲线也出现了显著变化,单一辐射峰分裂为双峰,且位于600nm的辐射峰比位于620nm处的辐射峰要弱30%。     

Fabrication of high-quality three-dimensional photonic crystal heterostructures

Three-dimensional photonic crystal (PC) heterostructures with high quality are fabricated by using a pressure controlled isothermal heating vertical deposition technique. The formed heterostructures have higher quality, such as deeper band gaps and sharper band edges, than the heterostructures reported so far. Such a significant improvement in quality is due to the introduction of a thin TiO₂ buffer layer between the two constitutional PCs. It is revealed that the disorder caused by lattice mismatch is successfully removed if the buffer layer is used once. As a result, the formed heterostructures possess the main features in the band gap of constitutional PCs. The crucial role of the thin buffer layer is also verified by numerical simulations based on the finite-difference time-domain technique.     

含负折射率材料的异质结构光子晶体的光学传输特性

利用传输矩阵法研究了正负折射率材料构成的异质结构光子晶体的光学传输特性。结果表明:当入射波正入射时,在这种异质结构光子晶体内出现了光子带隙,并且带隙内出现了3个极窄的透射峰,这是正负交替光子晶体和常规材料构成的同周期一维异质结构光子晶体所不具有的新颖物理特性。计算了这种异质结构光子晶体的透射谱。发现:这3个透射峰不敏感于入射角的变化,而在带隙两侧的透射峰则会随着入射角增大统一向带隙靠近;能带敏感于晶格厚度和周期数的变化。     

光子晶体全反射贯穿偏振滤波器的理论研究

 为了研究1维光子晶体中光的全反射贯穿效应及其偏振滤波特性,利用传输矩阵法计算了TE波和TM波在大于全反射角入射1维光子晶体的透射率,发现在透射波中出现了全反射贯穿效应。研究了TE波和TM波的全反射贯穿效应随介质光学厚度和周期数的变化特征,表明：全反射贯穿峰的频率随介质光学厚度的增加而减少,全反射贯穿峰数与周期数相等。且全反射贯穿效应具有优良的偏振滤波特性,利用这些特性可以设计出结构简单、控制方便的1维光子晶体的偏振滤波器。     

Structural and optical characterization of photonic crystals synthesized using the inward growing self-assembling method

We present a systematic analysis of three-dimensionally (3D) ordered photonic crystals fabricated using the recently reported inward growing self-assembling method. The structural and optical characterizations reveal extremely high quality features in these crystals. These include the high reflectance values in the first order stop band and the high energy optical response observed in all the samples, irrespective of the diameter of the spheres, even though the time for fabrication is less than three hours. The photonic stop band is tuned by varying the angle of incidence of light. The peak reflectance and the width of the photonic stop band are unaffected up to an angle of incidence of 45°. At higher angles of incidence, the involvement of other planes in the Bragg reflection is qualitatively demonstrated, emphasizing the extent of ordering and the quality of photonic crystals.     

Mesoscopic spin-dependent reflection experiments on InSb- and InAs-based heterostructures

Spin–orbit interaction in two-dimensional electron systems can lead to a spin-dependent reflection of carriers off a lithographic barrier. Scattering of a spin-unpolarized beam from the barrier leads to the creation of two fully spin-polarized side beams in addition to an unpolarized specularly reflected beam. We experimentally demonstrate a method to create spin-polarized beams of ballistic electrons in mesoscopic samples fabricated on InSb/InAlSb and InAs/AlGaSb heterostructures. We describe two geometries, one open and one closed, in which the spin-dependent reflection and spin-dependent semiclassical trajectories were observed.     

Sculpting the vacuum in a photonic band gap micro-chip

We describe the engineering of the electromagnetic vacuum in a 2D–3D photonic bandgap (PBG) hetero-structure. This facilitates the development of novel active devices and the observation of novel quantum electrodynamic phenomena. We consider a specific architecture suitable as an all-optical micro-transistor capable of novel ultra-fast response with low switching power requirements. This relies on a unique collective atomic switching and population inversion achieved by coherent resonant pumping in a suitably engineered vacuum. Specific waveguide architectures within the 3D PBG micro-chip provide local density-of-states (LDOS) peaks near their cutoff frequency. These provide “building blocks” for electromagnetic vacuum engineering without recourse to conventional high Q-factor micro-cavities. For the all-optical micro-transistor, a fork shape LDOS within the micro-chip is desirable, using trimodal waveguide architecture. We delineate the functional robustness of these architectures to disorder caused by manufacturing errors within the PBG micro-chip.     

六角形散射子光子晶体的界面态

研究采用平面波展开加超元胞方法计算了正方格子六角形空气散射子二维光子晶体镜面对称异质结的界面态.经过研究发现,这种异质结界面态可以通过相对于界面横向拉开或者纵向错开而产生,并且调节到绝对带隙中成为传导模.界面态的个数和变化规律在很大程度上依赖于光子晶体异质结构的几何和物理参量.通过对比我们发现：与圆柱形散射子相比,在六角形散射子异质结中更易于产生传导模,但是比四方柱形散射子的情况要困难.     

Fabrication of semiconductor-and polymer-based photonic crystals using nanoimprint lithography

The technology of fabricating photonic crystals with the use of nanoimprint lithography is described. One-and two-dimensional photonic crystals are produced by direct extrusion of polymethyl methacrylate by Si moulds obtained via interference lithography and reactive ion etching. The period of 2D photonic crystals, which present a square array of holes, ranges from 270 to 700 nm; the aperture diameter amounts to the half-period of the structure. The holes are round-shaped with even edges. One-dimensional GaAs-based photonic crystals are fabricated by reactive ion etching of GaAs to a depth of 1 μm through a mask formed using nanoimprint lithography. The resulting crystals have a period of 800 nm, a ridge width of 200 nm, and smooth nearly vertical side walls.     

Optical properties of one-dimensional photonic crystals fabricated by photo-electrochemical etching of silicon

The optical properties of one-dimensional photonic crystals (1D PCs), fabricated by electrochemical etching of periodic wall arrays on n-type (100) Si substrates, are investigated in this study. Several 1D PCs were fabricated with lattice periods varying from 4 to 7 μm and with trench depths in the range 160–210 μm. In-plane reflection spectra of the photonic structures at different depths were registered over a wide spectral range of 1.5–15 μm using Fourier Transform Infra-Red (FTIR) micro-spectroscopy. Some of the features observed in the reflection spectra of the structures investigated are believed to be as a result of interface roughness. A corrugated side-wall surface, an artifact of the fabrication technique, results in the degradation of optical reflection characteristics, principally mainly in the near IR spectral range, and the emergence of optical anisotropy. As a result of the periodicity, modulation of the reflection spectra, that is, the difference between the maxima and minima of the interference fringes, reached a value of 95% in the mid-infrared. The optical properties of the structures investigated indicate that they show promise for microphotonics applications.     

Optical properties of arrays of Si nanopillars on the (1 0 0) surface of crystalline Si

We studied Si nanopillars arrays interesting for potential applications in both photonics and electronics. Two types of the Si nanopillars arrays were investigated. The first type is a regular array (square lattice with the spacing of 270 nm) made up of nanopillars with diameters of 60–70 nm (non-quantum nanopillars). Polarized reflection spectra displaying photonic band gap features and the corresponding photonic band structures were studied. The second type is a non-regular array made up of nanopillars with diameters of 10–20 nm (quantum nanopillars). Enhancement of the optical phonon Raman band, change of selection rules and a low-frequency shift of 0.5 cm⁻¹ of the band corresponding to the quantum size effect in Si cylinders with average diameter 15 nm were observed for the quantum nanopillars.     

Light propagation in polytype Thue–Morse structures made of porous silicon

For the first time, two different sets of polytype Thue–Morse multilayered porous silicon structures are studied to investigate the reflection of light in aperiodic dielectrics. The optical response of the samples was studied before and after oxidation. The results were compared with the classical periodic structure, and an enhancement in the number of photonic bandgaps with a significant blue shift in reflectance peaks, in some of the structures, were observed. Numerical simulation along the lines of the transfer matrix approach is also presented.     

Electrical and piezoresistive properties of ion beam deposited DLC films

In present study diamond like carbon (DLC) films were deposited by closed drift ion source from the acetylene gas. The electrical and piezoresistive properties of ion beam synthesized DLC films were investigated. Diode-like current–voltage characteristics were observed both for DLC/nSi and DLC/pSi heterostructures. This fact was explained by high density of the irradiation-induced defects at the DLC/Si interface. Ohmic conductivity was observed for DLC/nSi heterostructure and metal/DLC/metal structure at low electric fields. At higher electric fields forward current transport was explained by Schottky emission and Poole–Frenkel emission for the DLC/nSi heterostructures and by Schottky emission and/or space charge limited currents for the DLC/pSi heterostructures. Strong dependence of the diamond like carbon film resistivity on temperature has been observed. Variable range hopping current transport mechanism at low electric field was revealed. Diamond like carbon piezoresistive elements with a gauge factor in 12–19 range were fabricated.     

Mixed Fano-SP resonant absorption of THz electromagnetic waves in a photonic resonator contacting with a metal film

In terahertz frequency region, we have investigated theoretically the correlation between spectra of a free photonic structure and that deposited on a metal for several models of metal. It was found that for quasi-normal incidence of p-polarized electromagnetic field the presence of metal generates narrow spectral wells in the middle of reflection windows existing in a free photonic crystal. Quite another manifestation of metal-resonator inter-influence takes place at incident angles exceeding the Brewster angle when reflection spikes coincide with modes of photonic crystal resonator and they are absent throughout the stopband areas. The effects are strongly depended on polarization, number of periods and angle of incidence.     

Energy‐lose induced unidirectional light propagation in porous alumina photonic crystal

Unidirectional light propagation phenomena are observed in the photonic crystal heterostructures based on anodic alumina membrane when the incident light illuminated from forward and backward directions. Transmittance / reflectance spectra measurements and theoretical calculations show that the origin of this kind of unbalanced reflection is ascribed to the energy loss induced by Rayleigh scattering. Importantly, unidirectional light propagation can be modulated over the whole visible light region by adjusting the combination of different photonic bandgap as well as the view angle. The as‐prepared heterostructures may provide potential applications in direction‐dependent photonic devices.     

Ultrafast nonlinear absorption and reflection of ZnS/ZnSe periodic nanostructures

ZnS/ZnSe heterostructures under condition of ZnSe interband excitation by a 150 fs laser pulse exhibit strong narrow-band modification of absorption and wide-band modification of reflection. Mean decay time for nonlinear reflection in heterostructures ranges from 2 to 3 ps whereas in bare ZnSe monolayer it exceeds 5 ps. Possible physical processes responsible for nonlinear refraction in the transparency region include interplay of absorption driven nonlinear refraction via Kramers–Kronig relations and intrinsic dielectric properties of dense electron–hole plasma. For nonlinear absorption at ZnSe band edge, interplay of plasma screening effects and states filling effects are relevant.     

Observation of Resonant Photon Tunneling in Photonic Double Barrier Structures

Reflectance and transmittance of 632.8 nm He-Ne laser light for photonic double barrier structures (consisting of a SF10 prism, SiO₂ layer, Al or Al₂O₃ active layer, SiO₂ layer and SF10 prism) were measured as a function of the angle of incidence for both the ρ- and s-polarized incidence. Sharp reflection dips and transmission peaks were observed at angles larger than the critical angle of total reflection. The appearance of the transmission peaks can be attributed to resonant photon tunneling through the photonic double barrier structures analogous to resonant electron tunneling through double potential barrier structures. Resonant tunneling is mediated by the long-range surface plasmon polariton in the case of the Al active layer and the electromagnetic guided modes in the case of the Al₂O₃ layer.This paper was originally presented at the seventh Meeting on Near Field Optics, which was held on July 1, 1998 at Nagoya University, Nagoya, organized by Research Group on Near Field Optics, the Optical Society of Japan, an affiliate of Japan Society of Applied Physics. The authors have won the Near Field Optics Award for their best presentation at the meeting.     

中红外完全带隙Si反蛋白石光子晶体的制备与光学性能研究

通过溶剂蒸发对流自组装法制备SiO2胶体晶体,采用低压化学气相沉积法填充Si,制备得到Si反蛋白石(opal)三维光子晶体.采用扫描电子显微镜对Si反opal的显微形貌进行表征,采用平面波展开法理论模拟Si反opal的光子带隙,采用傅里叶变换红外光谱仪测试其光学性能.研究结果表明:Si在SiO2微球空隙内填充致密均匀,显微红外光谱测试的光子带隙反射峰位置及带宽与理论计算基本符合.变角度反射光谱测试表明,Si反opal沿不同角度入射时在中心波长3319nm处均存在明显的反射峰,证明其具有完全光子带隙,带隙位于中红外大气窗口区域.     

Laser nanosources based on planar photonic crystals as new platforms for nanophotonic devices

Two-dimensional photonic crystal lasers have been fabricated on III–V semiconductor slabs. Tuning of the spontaneous emission in micro and nanocavities has been achieved by accurate control of the slab thickness. Different structures, some of them of new application to photonic crystal lasers, have been fabricated like the Suzuki-phase or the coupled-cavity ring-like resonators. Laser emission has been obtained by pulsed optical pumping. Optical characterization of the lasing modes have been performed showing one or more laser peaks centred around 1.55 μm. Far field characterization of the emission pattern has been realized showing different patterns depending on the geometrical shape of the structures. These kinds of devices may be used as efficient nanolaser sources for optical communications or optical sensors.     

Optical properties of multilayered Period-Doubling and Rudin-Shapiro porous silicon dielectric heterostructures

To investigate the optical properties in quasi-regular porous-silicon-based dielectric Period-Doubling and Rudin-Shapiro multilayer systems, we study here the reflection of light from these structures. The Period-Doubling and Rudin-Shapiro structures are fabricated in such a way that the optical thickness of each layer is one quarter of 600 and 640 nm respectively. We find that porous silicon Period-Doubling dielectric multilayers could demonstrate the optical properties similar to the classical periodic Febry–Perot interference filters with one or multiple resonant peaks, but with an advantage of having total optical thickness much lesser than the periodic structures. Additionally, light propagation in porous silicon Rudin-Shapiro structures is investigated for the first time, both theoretically and experimentally. The reflectance spectra of the structures exhibit photonic band gaps centered at predetermined wavelengths. In both cases, numerical simulation of light transmission is performed using transfer matrix method.