Calculation of LET in SEE simulation by pulsed laser

A key point in SEE (Single Event Effect) simulation experiment is how to calculate the equivalent LET (Linear Energy Transfer) for laser pulse. In this paper, the calculation method considering the influences of nonlinear absorption in semiconductor, reflection and refraction on device surface and other factors is presented. Simultaneously an instance of calculation is provided, with the result in good agreement with the SEU (Single Event Upset) threshold measured by heavy ions.     

单粒子翻转脉冲激光模拟的能量阈值的计算

根据光的吸收机理,分析了单粒子效应脉冲激光模拟实验中所需用的脉冲激光的特点,探讨了脉冲激光单粒子效应的Monte Carlo计算模拟途径。在只考虑光电效应的简化下,得到存储器硅片单粒子翻转时入射脉冲激光能量阈值与临界电荷的计算关系式,进而给出该硅片的翻转截面的计算公式。在给定了存储器硅片的临界电荷的情况下,对入射脉冲激光能量阈值和单粒子翻转截面进行了计算。     

脉冲光纤激光修锐青铜金刚石砂轮等离子体特性研究

采用光栅光谱仪 对脉冲光纤激光修锐青铜金刚石砂轮过程中产生的等离子体空间分辨发射光谱进行了测量. 研究了500–600 nm波段范围内的等离子体空间发射光谱强度随激光平均功率和脉冲重复频率的变化情况. 结果表明: 等离子体辐射光谱强度在其径向膨胀方向上距离砂轮表面约2.4 mm处达到最大值. 在局部热力学平衡假设条件下, 根据等离子体中六条铜原子谱线的相对强度, 利用Boltzmann 图法, 计算得到在不同激光功率和重复频 率条件下的等离子体电子温度沿砂轮径向方向的分布规律. 实验结果表明: 在激光修锐青铜金刚石砂轮过程中, 距离砂轮表面约3 mm处等离子体电子温度出现峰值, 其温度最高可达4380 K, 且等离子体电子温度随着激光参数和 空间位置的改变呈现出不同的演变规律. 关键词： 脉冲光纤激光 等离子体发射光谱 激光修锐 电子温度     

脉冲激光沉积动力学研究进展

脉冲激光沉积技术是现代常用的先进薄膜材料制备技术之一.文章在简要介绍脉冲激光沉积技术及其进展的基础上,较全面地介绍了脉冲激光沉积动力学的基本物理图像和动力学构架,深入地探讨了激光烧蚀靶材过程、等离子体膨胀过程和薄膜沉积过程的动力学规律,阐述了我国学者在脉冲激光沉积动力学研究方面的贡献,例如包括脉冲激光沉积三个工艺过程自洽的统一模型,等离子体膨胀的冲击波模型,基于局域能量动量守恒定律的新等离子体演化动力学模型,包括热源项、蒸发项、等离子体屏蔽效应和动态物性参数的烧蚀热传导模型,考虑电子碰撞效应和能带结构变化的修正双温模型,能统一描写从纳秒级到飞秒级脉冲激光烧蚀规律的统一双温模型等.     

Nanostructured silver thin films deposited by pulsed laser ablation

Nanostructured thin films were deposited by excimer laser ablation of silver targets in controlled atmospheres of He and Ar. The film structural properties were investigated by means of scanning electron microscope and transmission electron microscope imaging. The film growth mechanism was identified as the result of coalescence of nanometric clusters formed during plume flight. Cluster formation involves plume confinement as a consequence of the increased collisional rate among plasma species. Fast photography imaging of the laser-generated silver plasma allowed to identify plasma confinement, shock wave formation and plasma stopping.     

Tungsten ions produced by infrared pulsed laser irradiation

Energetic ions have been obtained irradiating a tungsten target with a Q-switched Nd:Yag laser, 1064?nm wavelength, 9?ns pulse width, 900?mJ maximum pulse energy and power density of the order of 10¹⁰?W/cm². The laser-target interaction induces a strong metal etching with production of plasma in front of the target. The plasma contains neutrals and ions with high charge state. Time-of-flight measurements are presented for qualitative analysis of the ion production. A cylindrical electrostatic ion analyzer permits measuring of the yield of emitted ions, the charge state of detected ions and the ion energy distribution. Measurements indicate that, at a laser fluence of the order of 100?J/cm², the charge state may reach 9+ and the ion energy reaches about 5?keV. The ion energy distribution is given as a function of the charge state. Experimental results indicate that an electrical field is developed along the normal to the plane of the target surface, which accelerates the ions up to high velocity. The ion velocity distributions follow a “shifted Maxwellian distribution”, which the author has corrected for the Coulomb interactions occurring inside the plasma.     

脉冲激光烧蚀Ge产生等离子体特性的数值模拟

针对激光烧蚀半导体材料Ge初期的特点,建立了1维的热传导和流体动力学模型。对波长为248 nm、脉宽为17 ns、峰值功率密度为4×108 W/cm2的KrF脉冲激光在133.32 Pa氦气环境下烧蚀Ge产生等离子体的特性进行了数值模拟。结果表明：单个激光脉冲对靶的烧蚀深度达到55 nm,蒸气膨胀前端由于压缩背景气体产生压缩冲击波, 波前的速度最大,温度很高。从不同时刻的电离率分布图中得出,在靶面附近区域,Ge的1阶电离始终占优势;在中心区域,脉冲作用时间内,Ge的2阶电离率比1阶电离率大,脉冲结束后,Ge的2阶电离率下降,1阶电离率逐渐变大。     

用脉冲半导体激光观察铷原子基态塞曼能级的相干共振

用半导体激光脉冲序列泵浦汽泡铷原子,观察其基态能级的△m=1和△m=2的塞曼(Zeeman)相干.利用直接调制激光二极管注入电流的增益开关技术,在波长780nm处产生约200ps的激光脉冲.对△m=1,用偏振光谱学方法检测;而对△m=2,则直接使用前向散射光谱学方法检测.     

单粒子翻转脉冲激光模拟的能量阈值的计算

 根据光的吸收机理,分析了单粒子效应脉冲激光模拟实验中所需用的脉冲激光的特点,探讨了脉冲激光单粒子效应的Monte Carlo计算模拟途径。在只考虑光电效应的简化下,得到存储器硅片单粒子翻转时入射脉冲激光能量阈值与临界电荷的计算关系式,进而给出该硅片的翻转截面的计算公式。在给定了存储器硅片的临界电荷的情况下,对入射脉冲激光能量阈值和单粒子翻转截面进行了计算。     

金属Fe薄膜的PLD制备及其非线性光学性质研究

采用脉冲激光沉积（PLD）技术在MgO基片上制备了金属Fe薄膜.利用原子力显微镜研究了不同制备温度对薄膜表面形貌的影响.x射线衍射分析表明沉积温度大于500℃时，Fe薄膜在MgO基片上有很好的结晶性，并有单一取向.通过z扫描方法测量了超薄Fe膜的光学非线性，得到了Fe薄膜的非线性折射率n₂＝709×10^-5cm²/ kW，非线性吸收系数 β＝-552×10^-3cm/W. 关键词： Fe薄膜 非线性 脉冲激光沉积     

A simple model for high fluence ultra-short pulsed laser metal ablation

The ultra-short laser metal ablation is a very complex process, the complete simulation of which requires applications of complicated hydrodynamics or molecular dynamics models, which, however, are often time-consuming and difficult to apply. For many practical applications, where the laser ablation depth is the main concern, a simplified model that is easy to apply but at the same time can also provide reasonably accurate predictions of ablation depth is very desirable. Such a model has been developed and presented in this paper, which has been found to be applicable for laser pulse duration up to 10 ps based on comparisons of model predictions with experimental measurements.     

Tantalum irradiation by high power pulsed laser at 1315 and 438 nm wavelengths

The high power pulsed laser Prague asterix laser system (PALS), operating at the fundamental (1ω) and third (3ω) harmonics (1315 and 438 nm wavelengths, respectively), is employed in a single-shot mode to irradiate tantalum targets in vacuum. The laser pulse width is 400 ps and the laser pulse energy ranges between 43 and 736 J at 1ω and between 12 and 230 J at 3ω. High ablation yields (0.1–0.6 mg per pulse) are measured as a function of the laser pulse energy at both wavelengths; at 438 nm higher etching rates are observed. The produced craters are analysed by the scanning electron microscope (SEM) and by the high sensitivity surface profiler system. They are investigated in dimension, shape and angle aperture as a function of the incident laser energy. Different possible mechanisms responsible for the different crater shapes are presented and discussed.     

Carrier storage in Ge nanoparticles produced by pulsed laser deposition

In this work, we report on the electrical characterization of Ge nanoparticles (NPs) produced by pulsed laser deposition (PLD) at room temperature (RT) in Ar gas inert atmosphere using a shadowed off‐axis deposition geometry. Our results show that functional thin films of crystalline Ge NPs embedded between thin alumina films can be obtained on p‐type Si(100) substrates following a low temperature and short rapid thermal annealing (RTA) treatment. Metal–oxide–semiconductor (MOS) structures with and without Ge NPs embedded in the alumina were prepared for the electrical measurements. The results indicate a strong memory effect at relatively low programming voltages (±4 V) due to the presence of Ge NPs. (© 2012 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

用脉冲紫外激光预处理提高刀具的金刚石涂层的附着强度

采用脉冲紫外激光（XeCl,308nm）表面消融预处理方法以硬质合金为衬底制备了金刚石涂层刀具。利用压痕法对涂层结合强度进行了测试,得到了最佳预处理工艺条件。采用碳化硅增强铝合金材料对制备的金刚石涂层刀具进行了实际切削性能实验。实验结果表明：脉冲紫外激光表面消融预处理方法的采用对刀具的金刚石薄膜涂层附着强度的提高有很大的帮助。     

脉冲激光气相沉积法制备的非晶CH薄膜特性分析

采用脉冲激光气相沉积(PLD)法,研究了氢气压强对非晶CH薄膜性能的影响。原子力显微镜图和白光干涉图显示,薄膜表面平整致密,随着氢气压强增大,粗糙度变大。拉曼光谱分析表明,氢气压强增加,G峰和D峰位置都在向高波数方向移动。傅里叶变换红外光谱分析显示,薄膜中存在sp3—CH2和sp2—CH等基团。最后,采用PLD漂浮法在最优参数氢气压强为0.3 Pa下,成功制备了不同厚度(100~300 nm)、满足一定力学强度、无明显宏观缺陷的自支撑CH薄膜。     

飞秒脉冲激光辐照对硅发光性能的影响

利用飞秒脉冲激光对单晶硅进行辐照,研究了在不同环境(纯水和空气)和能量密度条件下激光刻蚀过后硅片的光致荧光特性.对于辐照后的硅片,利用了场发射扫描电子显微镜(FESEM)、能谱仪(EDS)、傅里叶红外光谱仪(FT-IR)、光致荧光光谱仪(PL)进行表征.结果显示:在空气中样品表面形成了条纹状微结构,纯水中硅片表面生成了尺寸更小的珊瑚状微结构;激光刻蚀后在硅片表面的生成物主要是SiOx(x2),在纯水中处理后硅片氧元素的含量接近是空气中的4倍;傅里叶变换红外透射谱中主要为Si—Si键(610 cm-1)和Si—O—Si键(1105 cm-1)的振动;在空气和纯水中激发出的荧光均为蓝光(420—470 nm),在各自最佳激发波长下,纯水中荧光强度比空气中强2到3倍,但是在可见光范围内荧光峰的位置和形状都基本没有发生变化.研究表明:氧元素在光致发光增强上起着重要作用,光致发光最主要是由形成的氧缺陷SiOx(x2)导致的,生成低值氧化物SiOx的多少决定了发光的强弱.     

Self-catalyst synthesis of aligned ZnO nanorods by pulsed laser deposition

High-density well-aligned ZnO nanorods were successfully synthesized on ZnO-buffer-layer coated indium phosphide (InP) (100) substrates by a pulsed laser deposition (PLD) method. Scanning electron microscopy images show that the ZnO buffer layer formed uniform drip-like structure and ZnO nanorods were well-oriented perpendicular to the substrate surface. The sharp diffraction peak observed at 34.46° in X-ray diffraction scanning pattern suggests that the ZnO nanorods exhibit a (002)-preferred orientation. The PL spectra of ZnO samples shows a strong near band edge emission centered at about 380 nm and a weak deep level emission centered at around 495 nm, and it demonstrates that the ZnO nanorods produced in this work have high optical quality, which sheds light on further applications for nanodevices. Supported by the National Natural Science Foundation of China (Grant No. 50532080), the Science & Technology Foundation for Key Laboratory of Liaoning Province (Grant No. 20060131), and the Doctoral Project by China Ministry of Education (Grant No. 20070141038)     

倍频YAG泵浦脉冲钛宝石激光器设计与激光运转

用10ns倍频YAG激光泵浦实现了Ti~(3+):Al_2O_3激光运转,最大输出能量可达37mJ,能量转换效率40%,斜率效率59%,量子效率80%,泵浦阈值0.5～1.2J/cm~2,在662～938nm波长范围内实现了连续调谐.     

Deposition of zinc oxide thin films by reactive pulsed laser ablation

Thin films of zinc oxide have been deposited by reactive pulsed laser ablation of Zn and ZnO targets in presence of a radio frequency (RF) generated oxygen plasma. The gaseous species have been deposited at several substrate temperatures, using the on-axis configuration, on Si (1 0 0). Thin films have been characterized by scanning electron microscopy, atomic force microscopy, X-ray diffraction, X-ray photoelectron spectroscopy and infrared spectroscopy. A comparison among conventional PLD and reactive RF plasma-assisted PLD has been performed.     

Femtosecond pulsed laser ablation with spatial filtering

With the rise in demand for miniaturized features with better acute edge acuity and negligible thermal damage zone, one of the key vital areas lies in the refinement of the quality of the laser beam itself. Spatial filter is routinely used in optical micromachining systems to smoothen the Gaussian profile of the machining spot in order to obtain a feature of the desired quality. However, its profile smoothening effect has never been investigated for femtosecond pulsed laser micromachining process since the extremely high peak power of femtosecond pulses will cause damage on the filtering aperture of spatial filter. During the development of an acousto-optical micromachining system using femtosecond pulses, we found that if the damage of the filtering aperture can be circumvented, spatial filter can improve the machining quality of femtosecond pulse ablation, especially when ablation is conducted at low-fluency range (just above the ablation threshold fluency). In this paper, we investigate and demonstrate both the improvement and potential that beam refinement can bring about. In our experiment, a series of test patterns were ablated with a 400 nm second-harmonic Ti:Sapphire femtosecond laser of 150 fs duration at varying pulse energy ranging from 31 to 39 nJ. The specimen used in the experiment is a platinum- (Pt) sputtered coating of 100 nm thickness on a quartz substrate. The results show a significant improvement in the constancy of the shape as well as the size of ablated feature, revealing an improved beam profile and beam energy distribution due to spatial filtering.