金刚石延(111)面生长的第一性原理研究

利用密度泛函理论(DFT)对碳原子在镍(111)表面吸附结构进行了计算，得到了吸附能以及态密度 (density of state, DOS)分布，分析了吸附在镍(111)面的碳原子和金刚石(111)面的碳原子的分波态密度(PDOS)，结果表明吸附在镍表面的碳原子具有与金刚石表面碳原子相类似的电子结构特点，即两者都存在孤对的和成键的sp³杂化电子,进而发现吸附在镍表面的碳原子极易与金刚石表面相互作用形成稳定的类金刚石几何结构. 关键词： 密度泛函理论 化学吸附 电子结构 金刚石生长     

Nuclear magnetic resonance study of ultrananocrystalline diamonds

We report on a nuclear magnetic resonance (NMR) study of ultrananocrystalline diamond (UNCD) materials produced by detonation technique. Analysis of the ¹³C and ¹H NMR spectra, spin-spin and spin-lattice relaxation times in purified UNCD samples is presented. Our measurements show that UNCD particles consist of a diamond core that is partially covered by a sp ²-carbon fullerene-like shell. The uncovered part of outer diamond surface comprises a number of hydrocarbon groups that saturate the dangling bonds. Our findings are discussed along with recent calculations of the UNCD structure. Significant increase in the spin-lattice relaxation rate (in comparison with that of natural diamond), as well as stretched exponential character of the magnetization recovery, are attributed to the interaction of nuclear spins with paramagnetic centers which are likely fabrication-driven dangling bonds with unpaired electrons. We show that these centers are located mainly at the interface between the diamond core and shell.     

A study of coupled-reaction channel effects in the36S +37Cl system,hybridization between single particle orbits

Elastic and inelastic scattering as well as transfer transitions involving a valence proton in thesd- andfp- shell orbits are studied in the interaction of³⁷Cl +³⁶S at E_CM=50 MeV. Experimental angular distributions of single particle states of³⁷Cl (elastic and inelastic transfer) are presented with a CRC analysis. In the CRC calculations the effects of inelastic and transfer couplings are studied using known spectroscopic information. In the CRC analysis six single particle bound states and the collective 2⁺ excitation of³⁶S are included in the coupling scheme. Higher order coupling effects are found to be important. A distinct effect, the mixing of single particle states (of different parity) due to direct and transfer interactions is observed to produce an enhancement of the transfer cross section to the low lying states. This feature is due to a change of the asymptotically defined single nucleon orbits via polarization in the field of the other nucleus, an effect which is analogous to hybridization, known from atomic physics.     

Hybrid magneto-electric states in resonant tunnelling structures

Double barrier resonant tunnelling structures with wide undoped quantum wells are used to study quantum ballistic transport in the presence of a magnetic field B. The structures are based on n⁻GaAs/(AlGa)As with well widths of 60 and 120 nm. At B=0, the wider well structure (120 nm) shows as many as 70 resonances in I(V). With B applied in the plane of the barriers (B·J) these resonances evolve into hybrid magneto-electric states. At sufficiently large B, the electron orbits no longer extend to the second barrier and tunnelling occurs into cycloidal interface states which are localised near the emitter barrier. A theoretical model for the observed resonances based on the quantisation of the hybrid and cycloidal orbits is presented. Ballistic path lengths of at least 400 nm are observed.     

Electronic structure of UPd3 — A localized f compound

Various experiments on UPd₃, the analogue of the heavy fermion superconductor, UPt₃, have ascertained that there are two f electrons per U which are localized in a magnetic singlet state. Recently, both photoemission (PES) and de Haas-van Alphen (dHvA) experiments have been reported on UPd₃. To complement this experimental work, local density energy band calculations have been performed on UPd₃ where the f electrons have been treated as core states. The resulting density of states is found to be in good agreement with photoemission data. The theoretical Fermi surface is found to be more complex than current dHvA data indicate, but one can still unambiguously assign theoretical extremal orbits to the experimental data. Thus again, the data is consistent with a local f² configuration. Since the band calculations can explain the dHvA data in heavy fermion UPt₃ with the f electrons treated as band states, one finds that the Kohn-Sham ansatz for treating the f electrons as Bloch states breaks down between these two cases. This finding is confirmed by recent U(Pd_xPt_3-x) alloy experiments which show a sudden decrease in the specific heat coefficient when alloying these two compounds.     

Muon/Muonium in an Isotopically Pure 13C Diamond

A preliminary study of the diamagnetic (μ_d) and the paramagnetic (Mu _T ) states in a synthetic ¹³C diamond has been performed using the Transverse Field Muon Spin Rotation method. This system could be used to verify the quantum diffusion behaviour observed before, however, with a more reliable extraction of the hopping rate. The results were obtained in an applied magnetic field of 7.5 mT and at sample temperatures of 10 K, 100 K and 200 K. The prompt fraction, f, of the μ_d state remains constant at 22(5)% in the range 10–200 K; that of the Mu _T state increases from 53(10)% at 10 K to 78(10)% at 200 K. The fractions of the two states add to 100% at 200 K, suggesting non-population of the bond-centred state, Mu_BC, which is often observed in other diamond samples. The μ_d state has a spin relaxation rate of 0.20(5) μs⁻¹, in contrast to the zero value obtained in type II diamond samples. This indicates appreciable interaction of the μ_d state with the ¹³C atoms. The Mu _T state has a large spin relaxation rate ranging from 3.0(5) μs⁻¹ at 10 K to 7.0(5) μs⁻¹ at 200 K, consistent with values obtained in diamond samples with defects. This work is part of ongoing studies of muon/muonium-defect interactions in diamonds. This revised version was published online in September 2006 with corrections to the Cover Date.     

Mechanisms of CVD diamond nucleation and growth on mechanically scratched Si(100) surfaces

The diamond nucleation has been studied on scratched Si(100) both by surface analyses (XPS, AES, ELS) and microstructural probes (AFM, SEM). Two pathways for diamond formation and growth are detected: A seeding pathway occurs by direct growth from part of diamond seeds left by the mechanical pretreatment. Not all of these seeds however are prone to diamond growth as they can be either dissolved or carburized. A nucleation pathway occurs through a stepwise process including the formation of extrinsic (pretreatment) or intrinsic (in situ) nucleation sites, followed by formation of carbon-based precursors. It is believed that nucleation sites could be either grooves of scratching lines or protrusions produced by etching-redeposition. The size of these protrusions is not larger than 100 nm. On top of these protrusions as well as on the bare substrate, a thin layer of silicon carbide rapidly forms and DLC carbon likely. This complex process on top of protrusions may constitute carbon-based embryos for further diamond nucleation. Received 21 December 1998     

定域密度泛函理论对金刚石(100)面再构的研究

用定域密度泛函理论和数值基的方法,进行电荷自洽的总能计算。采用一个集团模型(C₄₉H₃₆)模拟C(100)表面,研究其再构的情况。根据表面原子上受力的计算,得到优化的表面碳原子的几何结构、表面碳原子成对二聚化的成键性质、优化键长(1.415?),以及相应的电子能态结构、表面态的分布等性质。     

Optical spectroscopy of the surface of nanoporous diamond films

We have studied the IR absorption spectra of samples of porous ultrananocrystalline diamond (UNC diamond) obtained by selective etching of the sp ² phase in UNC diamond films. We show that the surface of porous UNC diamond is polyfunctional. We have studied the behavior of surface hydride, carbonyl, carboxyl, and hydroxyl groups as a function of annealing temperature in air and the time kept under normal conditions for UNC diamond films previously oxidized at 430°C–450°C. In the range from a few minutes to a few months, we studied the kinetics for establishment of the steady state for the functional adsorbed layer on the diamond surface under normal conditions. The observed growth in the intensity of the transmission bands due to hydride (CH _x ) and other hydrogen-containing functional groups is explained by dissociation of water molecules on the surface of the UNC diamond films.     

Muon behaviour in diamond grown by chemical vapour deposition

Transverse‐field μSR spectroscopy was used to study the behaviour of positive muons implanted in polycrystalline chemical‐vapour‐deposited (CVD) diamond. Measurements were made at sample temperatures of 10 K, 100 K, and 300 K at a magnetic field of 7.5 mT to study the behaviour of the “normal” (isotropic) muonium state (Mu_T) and the diamagnetic states (μ^d), and at 10 K and 300 K at the so‐called “magic field” of 407.25 mT to study the anomalous (bond‐centred) muonium state (Mu_BC) and μ^d. The absolute fractions of the muonium states in the CVD diamond are observed to be close to those in high‐quality natural type‐IIa single crystal diamond. This revised version was published online in August 2006 with corrections to the Cover Date.     

Analysis of the current-transport mechanism across a CVD diamond/silicon interface

This work presents a study on the mechanism of injection and charge transport through a CVD diamond/n⁺-Si interface. The current-voltage-temperature characteristics of CVD diamond/silicon heterojunctions measured in the temperature range 119-400 K have been interpreted according to thermionic theory and thermionic field-emission theory. This junction shows deviations from the ideal thermionic theory current model, suggesting the presence of surface states, thin-layer depletion and/or non-homogeneity in the diamond/silicon interface. The T₀ anomaly has been used to explain the behaviour of the ideality factor with temperature. At very low temperatures tunnelling may occur because the E₀₀ values for these junctions are close to the value expected by thermionic field-emission theory. The usual activation-energy plot deviates from linearity at low temperatures. This deviation has been corrected supposing a ln(J_S/T²) versus 10³/nT plot. Under these conditions the Richardson constant is found to be 0.819 A cm⁻² K⁻², which is close to the theoretical value of 1.2 A cm⁻² K⁻². Field-emission device is a promising application for diamond/silicon structure.     

Defects and impurities in nanodiamonds: EPR, NMR and TEM study

EPR, ¹³C NMR and TEM study of ultradisperse diamond (UDD) samples is reported. The compounds show a high concentration of paramagnetic centers (up to 10²⁰ spin/g), which are due to structural defects (dangling C-C bonds) on the diamond cluster surface. The anomalous reduction in the spin-lattice relaxation time of ¹³C (from several hours in natural diamond to ∼150 ms in UDD clusters) is attributed to the interaction between the unpaired electrons of the paramagnetic centers and nuclear spins. ¹³C NMR line-width reflects the fact that the structure of the UDD surface is distorted in comparison to the ‘bulk’ diamond structure.     

Nucleation and initial growth of diamond by biased hot filament chemical vapour deposition

6 cm^-2 for non-scratched silicon. The maximum value of the nucleation density was over 10¹¹ cm^-2 on mirror-polished Si(100) at -300 V. The transportation process of the ion flux from the filament to the substrate is discussed in detail for biased substrates. The nucleation enhancement by the positive bias is believed to be a result of the increased impingement of the electrons emitted from the filament to the substrate surface. The studies have shown that electron emission from diamond plays a key role in negative-bias-enhanced nucleation by accelerating the dissociation of molecular hydrogen and hydrocarbon species into various free radicals and causing a plasma to be ignited near the substrate surface. The negative bias pretreatment is also a critical step in growing heteroepitaxial diamond films: the enlargement of the area of diamond clusters in contact with the substrate enhances the orientated growth of the films. Received: 18 October 1996/Accepted: 4 February 1997     

负偏压热灯丝CVD金刚石膜核化和早期生长的研究

利用扫描电子显微镜、Raman谱和X射线光电子能谱，研究了Si衬底上热灯丝CVD金刚石膜的核化和早期生长.在-300V和100mA条件下预处理15min，镜面抛光的Si(100)表面上金刚石核密度超过了10⁹cm^-2，但是核的分布极不均匀且可分为三个区域：A区，边缘处以锥体为主；B区，位于边和中心之间过渡区是纳米金刚石；C区，中心处有SiC层.无偏压下生长4h后，A区形成许多大而弧立的金刚石颗粒，B区成为织构金刚石膜，而C区变为含有大量缺陷的连续金刚石膜.衬底负 关键词：     

Fluorination of diamond — C4F9I and CF3I photochemistry on diamond (100)

The radiation-induced decomposition of C₄F₉I and CF₃I overlayers at 119 K on diamond (100) surfaces has been shown to be an efficient route to fluorination of the diamond surface. X-ray photoelectron spectroscopy has been used for photoactivation as well as for studying the photodecomposition of the fluoroalkyl iodide molecules, the attachment of the photofragments to the diamond surface, and the thermal decomposition of the fluoroalkyl ligands. Measured chemical shifts agree well with ab initio calculations of both C 1s and F 1s binding energies. It is found that chemisorbed CF₃ groups on diamond (100) decompose by 300 K whereas C₄F₉ groups decompose over the range 300 to 700 K and this reactivity difference is rationalized on steric grounds. Both of these thermal decomposition processes produce surface C---F bonds on the diamond. The surface C---F species thermally decompose over a wide temperature range extending up to 1500 K. Hydrogen passivation of the diamond surface is ineffective in preventing free radical attack from the photodissociated products of the fluoroalkyl iodides; I atoms produced photolytically abstract H from surface C---H bonds to yield hydrogen iodide at 119 K allowing diamond fluorination. The attachment of chemisorbed F species to the diamond (100) surface causes band bending as the surface states are occupied as a result of chemisorption. This results in a shift to higher binding energy of the diamond-related C 1s levels present in the surface and subsurface regions which are sampled by XPS on the diamond. The use of photoactivation of fluoroalkyl iodides for the fluorination of diamond surfaces provides a convenient route compared to other methods involving the action of atomic F, molecular F₂, XeF₂ and F-containing plasmas.     

NV centers in diamond: Quantum-chemical modeling

Quantum-chemical modeling is used to study the relationship between the spin states of nitrogen vacancy (NV) centers and their position on a (100) surface or in the bulk of a diamond crystal. The spin density of the NV centers is computed, and the position of the centers on the crystal surface is demonstrated to be energetically more favorable. The (100) surface of diamond crystal is found to affect the geometrical parameters and adsorption properties of NV centers and their spin-density distribution, relative to these properties in the bulk.     

Composition,structure, surface states,and O2 sticking coefficient for differently prepared GaAs(1̄1̄1̄)As surfaces

The polar GaAs(1̄1̄1̄)As surface can be prepared in three stable and ordered states: two by molecular beam epitaxy (MBE), namely the As-stabilized and the Ga-stabilized states and one simply by ion bombardment and annealing at 770 K. The respective LEED structures are $\text{(2 × 2), (}\text{19}\text{×}\text{19}\text{)}\text{R}\text{23.4°}$, and (1 × 1) with a diffuse faint (3 × 3) superstructure. Auger measurements and the comparison with the stoichiometric cleaved (110) surface show that there are different As concentrations in the first atomic layer associated with each of these three surfaces. Whereas about 10 to 15% of the first As layer appears to be missing on the (2 × 2) surface, about 50% is missing on the $\text{19}$ surface. On the (1 × 1) surface the first As layer is removed completely. The intensity of emission from the surface sensitive states between 1 and 4 eV below the valence band edge, as seen by angular resolved UPS, roughly corresponds to the amount of As at the surface thus confirming their interpretation as As-derived surface states. The inital sticking coefficent for oxygen depends strongly on the surface structure: ～10^?8 for the (2 × 2), ～10^?7 for the $\text{19}$, and ～10^?4 for the (1 × 1) surface. The sticking coefficient does not depend on the surface concentration of As but rather on the degree of saturation of dangling bonds on Ga atoms.     

Ion-induced self-organized ripple patterns on graphite and diamond surfaces

In order to investigate the allotropic effect on ripple pattern formation, highly oriented pyrolytic graphite (HOPG) and single crystalline diamond were irradiated with 10-200 keV Xe⁺ at an incident angle of 60° with respective to the surface normal. The irradiation fluence was 2 × 10¹⁷ cm⁻² for all irradiations. Ripple patterns were observed on both HOPG and diamond surfaces. However, large differences in ripple wavelengths, amplitudes and surface roughnesses between HOPG and diamond were recognized. The reason for these differences is discussed.     

Binding states and decomposition of NO on single crystal planes of Pt

Nitric oxide desorption and reaction kinetics are compared on the (111), (110),and (100) planes of platinum using temperature programmed desorption mass spectrometry. NO exhibits large crystallographic anisotropies with the (100) plane having stronger bonding and much higher decomposition activity than the (110) or (111) planes. The desorption activation energies for the major tightly bound states are 36, 33.5, and 25 kcal mole^?1 on the (100), (110), and (111) planes respectively. Pre-exponential factors for these states on the (110) and (111) planes are 1 × 10^16±0.5s^?1. The major tightly bound state on the (100) plane dissociates to yield 50% N₂ and O₂, but all other states all planes desorb without significant decomposition. The fraction decomposed is less than 2% on the Pt(111) surface.     

The form of different charge states of the vacancy in diamond

There are many different centres formed in diamond that have similar optical characteristics such as a sharp zero phonon line and phonon sidebands. Electronic structure and behaviour of some of these defects is analysed in terms of an intrinsic lattice vacancy model. Using such a model (which sometimes provides a clearer interpretation of experimental results) a comparison of stress matrix elements for the GR1, ND1, H3, N3 and 1,945 eV centres is made. It is concluded that the main behaviour of these defects can simply be associated with the different charged states V⁰, V^?, V^2? and V^3?—the role of nitrogen (apart from providing electrons) being to lower the symmetry about the vacancy.