晶格量子涨落对spin-Peierls系统低能量激发态的影响

在非绝热近似下，研究了一维spin-Peierls系统中晶格量子涨落 对系统性质的影响，讨论了系统的二聚化相变、单粒子激发和双粒子束缚态. 结果表明，量子晶格涨落会抑制晶格的二聚化，破坏系统的spin-Peierls基态稳定性.在临界点，系统发生从二聚化spin-Peierls态向无能隙态的相变. 自旋声子耦合强度对束缚态能隙的影响比单粒子激发谱能隙显著. 关键词： sin-Peierls系统 非绝热近似 玻色化 相图     

一维分子晶体系统的极化子-孤子压缩态、系统基态性质和量子涨落

基于一维分子晶体系统的 Holstein 模型,采用压缩-相干态展开方法,计及电子-声子间量子关联和重整化平移修正,分析和研究电子-双声子相互作用对极化子-孤子系统基态性质和量子涨落的影响.推导了一维极化子-孤子系统的封闭形式非线性方程.应用非线性项展开方法,给出非线性方程的解析解和相关基态特性结果.研究表明,仅当电子-双声子耦合强度 g₁<0时非线性方程才有孤波解,此时声子量子涨落效应随着压缩的增加,极化子-孤子系统基态能量变得更负,孤子局域减少,孤子态更加稳定;另一方面,电子密度涨落〈Δ²n〉和声子坐标-动量的不确定量〈Δ²p〉〈Δ²q〉比无声子压缩效应的大,极化子结合能变得更负.特别是,当g₁<0时,双声子效应的量子涨落〈Δ²n〉与〈Δ²p〉〈Δ²q〉的值比单声子情况有明显增加. 关键词： 压缩-相干态展开 极化子-孤子态与量子涨落 电子-双声子相互作用 非线性薛定谔方程     

光晶格中超流费米气体的能隙孤子

研究了一维光晶格中超流费米气体的能隙孤子. 应用平均场理论和超流费米气体的流体动力学模型, 利用变分法得到了在整个跨越区超流费米气体在光晶格中存在带隙孤子的条件, 即原子间的非线性相互作用项与系统化学势以及晶格深度的相互关系. 通过对超流费米气体的基态能隙孤子空间分布的分析与对比, 揭示了在一维情况下超流费米气体能隙孤子的存在并发现超流费米气体能隙孤子在整个跨越区当系统从Bose-Einstein凝聚端跨越到BCS端时孤子存在的条件与孤子空间分布存在明显的差别.     

基态非简并聚合物中的极化子和双极化子的动力学(Ⅱ)--强电场下研究

本文模拟了基态非简并聚合物中的极化子和双极化子在强电场中的运动 ,研究了在不同简并参数的系统中极化子和双极化子的动力学稳定性,发现在强场下简并参数对极化子的稳定性影响不大,极化子晶格畸变的运动滞后于电子的运动,价带上的电子在强电场的激发下参与导电.双极化子在简并参数大的系统中较为稳定.     

基态简并聚合物中极化子对的碰撞研究

基于紧束缚的Su-Schrieffer-Heeger(SSH)模型,利用非绝热的动力学方法,研究了基态简并聚合物中空穴极化子和电子极化子的碰撞过程.研究发现,弱电场下两个极化子碰撞分开再相遇形成孤子对,中等强度电场下它们碰撞分开后成为两个准粒子,强电场下空穴极化子和电子极化子碰撞后直接解离.     

Na掺杂反式聚乙炔中的孤子晶格的能谱与电子束缚态

从离散的ＳＳＨ模型出发，考虑了链内的电子相互作用，以及由杂质和周围链上的荷电孤子产生的库仑势的影响，探讨了各种掺杂浓度的反式聚乙炔中孤子晶格的能谱与电子束缚态。计算结果表明：在孤子晶格的能谱中，在价带底有两条定域能级，在导带顶存在着多个电子束缚态，随掺杂浓度的升高，束缚态的局域性减弱，禁带中的孤子能级形成孤子能带。当掺杂浓度高达１６．６７％时，所有的电子束缚态都消失，转变为扩展态。孤子晶格的禁带宽度随着掺杂浓度的增加而增大，最高占据态与导带底之间的能隙则随之逐渐减小。孤子能带底与价带顶之间的能隙在临界浓度附近有一极大值。还讨论了电子－电子相互作用对孤子晶格能谱的影响。 关键词：     

石墨烯纳米网电导特性的能带机理：第一原理计算

通过第一原理电子结构计算来研究有序多孔纳米网的电导特性变化的能带机理.能带结构分析结果表明:石墨烯纳米网超晶格(3m,3n)(m和n为整数)的电子本征态在布里渊区中心点发生四重简并;碳空位孔洞规则排列形成的石墨烯纳米网具有由简并态分裂形成的宽度可调带隙,无论石墨烯的两个子晶格是否对等.在具有磁性网孔阵列的石墨烯纳米网中,反铁磁耦合使对称子晶格的反演对称性增加了一项量子限制条件,导致能带结构在K点的二重简并态分裂成带隙.通过控制网孔密度能够有效调节石墨烯纳米网的带隙宽度,为实现新一代石墨烯纳米电子器件提供了理论依据.     

基态非简并聚合物中的极化子和双极化子动力学

研究了极化子和双极化子在基态非简并聚合物中的动力学.弱电场下，发现载流子为带电极 化子或双极化子，它们的晶格态与电荷态始终耦合在一起同步运动.极化子比双极化子的运 动速度快，存在饱和速度，且它们的饱和速度随聚合物非简并度的增加而降低；强电场下， 元激发的电荷态将脱离晶格态的束缚而快速运动，参与导电的不再是极化子或双极化子，而 是电子直接导电. 关键词： 极化子 双极化子 动力学模拟     

界面效应对弱受限球形量子点异质结内电子能级的影响

采用球壳结构和渐变有限深谐振子势阱模型,分析了界面效应对弱受限半导体量子点异质结的束缚态电子基态能级的扰动情况.计算表明,对于处于弱受限的量子点,异质结厚度在30 nm内界面效应明显.当异质结壳层厚度进而增大的时候界面效应的影响将逐渐减弱,受扰动的基态能级间隔逐渐减小,到最后各基态能简并为某一固定值.     

基态非简并导电聚合物——坐标空间研究

通过引入简并破缺项,建立了非等势垒Kronig-Penney方势阱模型,在实坐标空间中研究了基态非简并聚合物——顺式聚乙炔的基态及其激发态,并与紧束缚模型所得到的结果进行了比较.给出了体系的电子态、电荷密度等在实坐标空间的分布特征.发现在坐标空间研究可以更加准确地反映体系的电子态密度、电子空间密度分布等特征. 关键词： 聚合物 方势阱 基态 极化子     

Sensitivity and linearity of superconducting radio-frequency single-electron transistors: effects of quantum charge fluctuations

We have investigated the effects of quantum fluctuations of quasiparticles on the operation of superconducting radio-frequency single-electron transistors (rf-SETs) for large values of the quasiparticle cotunneling parameter alpha = 8EJ/Ec, where EJ and Ec are the Josephson and charging energies. We find that, for alpha > 1, subgap rf-SET operation is still feasible despite quantum fluctuations that wash out quasiparticle tunneling thresholds. Surprisingly, such rf-SETs show linearity and signal-to-noise ratio superior to those obtained when quantum fluctuations are weak, while still demonstrating excellent charge sensitivity.     

Instanton in disordered Peierls systems

We study disordered Peierls systems described by the fluctuating gap model. We show that the typical electron states with energies lying deep inside the pseudogap are localized near large disorder fluctuations (instantons), which have the form of a soliton-antisoliton pair. Using the “saddle-point” method we obtain the average density of states and the average optical absorption coefficient at small energy.     

Sum over configurations (non-perturbative quantum expansion for solitons and other states in field theory

Models of hadrons and temporary quark confinement, based on field theories with extended classical solutions, neglect quantum fluctuation effects. To account for these effects, we propose systematic expansions for the vacuum, one-particle and collision states which are non-perturbative. Their order is not a power of any coupling constant, but a number of field configurations. To exhibit the conceptual and technical simplicity of the method, we study fluctuations describing virtual soliton-antisoliton pairs in a model theory. We also propose a “hybrid approximation” for non-perturbative calculations of scattering amplitudes.     

高聚物中分子相互作用对红外吸收谱的影响

基于扩展SSH模型及动力学演化的方法,通过数值计算研究了链间耦合作用对高聚物吸收谱的影响.计算结果表明,随着链间相互作用的增大,会导致低频吸收边发生红移,这与实验结果一致.进而发现,对于呈电中性的体系,吸收边红移有两种不同的理论根源:第一种情况是带隙减小导致的红移;第二种情况是电子从带间态向导带电子态跃迁导致的吸收边红移.     

高聚物中分子相互作用对红外吸收谱的影响

基于扩展SSH模型及动力学演化的方法,通过数值计算研究了链间耦合作用对高聚物吸收谱的影响。计算结果表明,随着链间相互作用的增大,会导致低频吸收边发生红移,这与实验结果一致。进而发现,对于呈电中性的体系,吸收边红移有两种不同的理论根源：第一种情况是带隙减小导致的红移;第二种情况是电子从带间态向导带电子态跃迁导致的吸收边红移。     

Mesoscopic superconductors under irradiation: microwave spectroscopy of Andreev states

We show that irradiation of a voltage-biased superconducting quantum point contact at frequencies of the order of the gap energy can remove the suppression of subgap dc transport through Andreev levels. Quantum interference among resonant scattering events involving photon absorption is furthermore shown to make microwave spectroscopy of the Andreev levels feasible. We also discuss how the same interference effect can be applied for detecting weak electromagnetic signals up to the gap frequency, and how it is affected by dephasing and relaxation.     

QUANTUM FLUCTUATION OF THE ORDER PARAMETER AND THE OPTICAL ABSORPTION IN POLYACETYLENEO

We study in this paper the effects of lattice quantum fluctuations upon the order parametert in the Peierls systems by using the Green's function technique.We start from the discrete Su-Schrief fer-Heeger model with quantized phonon field and derive a coupled system of equations for the order parameter and Green's functions.It turns out that the order parameter is reduced compared with the adiabatic value but the Peierls instability survives the quantum fluctuations in agreement with,Monte Carlo results.The band-to-band optical absorption coefficient of polyacetylene with lattice fluctuation being accounted for is also calculated and compared with the experimental data.     

Effects of competing orders and quantum phase fluctuations on the low-energy excitations and pseudogap phenomena of cuprate superconductors

We investigate the low-energy quasiparticle excitation spectra of cuprate superconductors by incorporating both superconductivity (SC) and competing orders (CO) in the bare Green’s function and quantum phase fluctuations in the proper self-energy. Our approach provides consistent explanations for various empirical observations, including the excess subgap quasiparticle density of states, “dichotomy” in the momentum-dependent quasiparticle coherence and the temperature-dependent gap evolution, and the presence (absence) of the low-energy pseudogap in hole- (electron-) type cuprates depending on the relative scale of the CO and SC energy gaps.     

On the instability of the one-dimensional Peierls insulator in uniform electric field

Behaviour of the quasi-one-dimensional Peierls insulator (PI) with a doubled lattice period (of the trans-polyacetylene type) is studied in the uniform electric field The electric field polarizes the insulator thus decreasing the gap Δ in the quasiparticle spectrum and creates by tunnelling charge carriers pairs. Depending on the field strength direct creation of soliton-antisoliton pairs or electron-hole pairs (e-h) takes place. The (e-h) pairs deform the lattice forming polarons. For the cis-type polyacetylene the superinsulator phase with soliton confinement exists. The latter is characterized by a great number of soliton-antisoliton quantum levels. Because of the charges generation the process of insulator-to-metal transition becomes continuous.     

Disorder and density of defects in hydrogenated amorphous silicon-carbon

We report subgap absorption measurements by photothermal deflection spectroscopy in a-Si_1-xC_x: H alloys in the whole range of composition. We observe that incorporation of carbon in the silicon matrix increases both the inverse of the slope of the exponential absorption tail (which is due to the valence band tail) and the subgap absorption around 1.3 eV (due to defects). This result is correlated with former results on the broadening of the conduction band tail deduced from transport measurements in these alloys. It is concluded that carbon incorporation induces disorder and defect creation in the amorphous silicon matrix.