离子注入ZnO薄膜的拉曼光谱研究

室温下,用80 keV N⁺和400 keV Xe⁺离子注入ZnO薄膜,注入剂量分别为5.0×10¹⁴—1.0×10¹⁷/cm²和2.0×10¹⁴—5.0×10¹⁵/cm².利用拉曼散射技术对注入前后的ZnO薄膜进行光谱测量和分析,研究了样品的拉曼光谱随离子注入剂量的变化规律.实验结果发现,未进行离子注入的样品在99,435 cm<     

Correlation of Electronic and Magnetic Properties of Thin Polymer Layers with Cobalt Nanoparticles

Nanoparticles (NPs) of cobalt are synthesized in shallow layers of polyimide using 40 keV implantation of Co⁺ ions with a few different fluences at various ion current densities. Nucleation of individual NPs at low fluencies and their percolation at high fluencies are crucial processes governing the electrical and magnetic properties of the metal/polymer nanocomposites that can be controlled by the implantation regimes. In particular, one can tune the magnetoresistance between negative and positive through appropriate choice of ion fluence and current density. The found non‐monotonous dependence of the magnetoresistance on the applied magnetic field allows suggestion of spin‐dependent domain wall scattering affecting the electron transport. The samples implanted with low fluencies demonstrate superparamagnetic behavior down to very low blocking temperatures. For high fluence (1.25 × 10¹⁷ cm⁻²) the transition to ferromagnetic ordering is observed that is related to the increased magnetic interaction of NPs.     

First order Raman scattering analysis of transition metal ions implanted GaN

Transition Metal (TM) ions V, Cr, Mn and Co were implanted into GaN/sapphire films at fluences 5×10¹⁴, 5×10¹⁵ and 5×10¹⁶ cm⁻². First order Raman Scattering (RS) measurements were carried out to study the effects of ion implantation on the microstructure of the materials, which revealed the appearance of disorder and new phonon modes in the lattice. The variations in characteristic modes 1GaN i.e. E₂(high) and A₁(LO), observed for different implanted samples is discussed in detail. The intensity of nitrogen vacancy related vibrational modes appearing at 363 and 665 cm⁻¹ was observed for samples having different fluences. A gallium vacancy related mode observed at 277/281 cm⁻¹ for TM ions implanted at 5×10¹⁴ cm⁻² disappeared for all samples implanted with rest of fluences. The fluence dependent production of implantation induced disorder and substitution of TM ions on cationic sites is discussed, which is expected to provide necessary information for the potential use of these materials as diluted magnetic semiconductors in future spintronic devices.     

Dynamic behavior of implanted nitrogen in zirconium at various stages of implantations

Abstract

Depth profiles of nitrogen implanted into Zr with an energy of 50 keV were calculated by dynamic SASAMAL code with three different assumptions for the diffusion of excess atoms over stoichiometry, i.e., ‘no diffusion', ‘both-sides-diffusion’ and ‘upward-diffusion'. To distinguish nitrogens implanted certain stage of implantations, alternate implantations of ¹⁵N and ¹⁴N were used. The results were compared with the experimental results by the resonance nuclear reaction analysis, NRA. For ¹⁵N implantation with fluences from 1 × 10¹⁷ to 1 × 10¹⁸ ions/cm², the calculated results with ‘upward-diffusion’ agreed very well with the NRA results for all fluences. For the depth profile of pre-implanted ¹⁵N (1 × 10¹⁷ ions/cm²), which was changed by the subsequent ¹⁴N implantation with fluences of 1 ～ 10 × 10¹⁷ ions/cm², the agreement with the NRA results was satisfactory until the ¹⁴N fluence did not exceed 5 × 10¹⁷ ions/cm², but for higher fluences, the retained probabilities of ¹⁵N obtained by the ‘upward-diffusion’ code were too low compared with the experimental value obtained by NRA. For the depth profiles of ¹⁵N (1 × 10¹⁷ ions/cm²) implanted following after implantations of ¹⁴N with fluences of 1 ～ 10 × 10¹⁷ ions/cm², the agreement with the NRA results was quite good for all ¹⁴N fluences. It is concluded that the approximation of ‘upward-diffution’ is proper satisfactorily for the treatment of atoms implanted at the final stage of implantations, but a problem is left for the treatment of atoms implanted at the early stage of implantations.     

Ag implantation-induced modification of Ni–Ti shape memory alloy thin films

Nanocrystalline thin films of Ni–Ti shape memory alloy are deposited on an Si substrate by the DC-magnetron co-sputtering technique and 120?keV Ag ions are implanted at different fluences. The thickness and composition of the pristine films are determined by Rutherford Backscattering Spectrometry (RBS). X-Ray diffraction (XRD), atomic force microscopy (AFM) and four-point probe resistivity methods have been used to study the structural, morphological and electrical transport properties. XRD analysis has revealed the existence of martensitic and austenite phases in the pristine film and also evidenced the structural changes in Ag-implanted Ni–Ti films at different fluences. AFM studies have revealed that surface roughness and grain size of Ni–Ti films have decreased with an increase in ion fluence. The modifications in the mechanical behaviour of implanted Ni–Ti films w.r.t pristine film is determined by using a Nano-indentation tester at room temperature. Higher hardness and the ratio of higher hardness (H) to elastic modulus (E_r) are observed for the film implanted at an optimized fluence of 9?×?10¹⁵ ions/cm². This improvement in mechanical behaviour could be understood in terms of grain refinement and dislocation induced by the Ag ion implantation in the Ni–Ti thin films.     

Non linear volume expansion in helium implanted erbium metal films

Large dimensional expansion has been observed at room temperature in erbium metal films implanted at room temperature with high fluences of helium. The interferometrically measured film thickness increases linearly with fluence up to a critical dose of 3 × 10¹⁷ He+/cm² (E = 160 keV) and is superlinear at higher fluences. Annealing at 400°C causes a reduction of the induced expansion for fluences below the critical dose without apparent release of helium. Annealing of samples implanted to fluences greater than 3.5 × 10¹⁷ He⁺/cm² causes accentuated expansion which is accompanied by formation and rupture of bubbles at the film surface.     

Fluence dependant formation of <Emphasis Type="Italic">β</Emphasis>-SiC by ion implantation and thermal annealing

The β-SiC nanocrystals were synthesized by the implantation of carbon ions (C⁻) into silicon followed by high-temperature annealing. The carbon fluences of 1×10¹⁷, 2×10¹⁷, 5×10¹⁷, and 8×10¹⁷ atoms/cm² were implanted at an ion energy of 65 keV. It was observed that the average size of β-SiC crystals decreased and the amount of β-SiC crystals increased with the increase in the implanted fluences when the samples were annealed at 1100 °C for 1 h. However, it was observed that the amount of β-SiC linearly increased with the implanted fluences up to 5×10¹⁷ atoms/cm². Above this fluence the amount of β-SiC appears to saturate. The Fourier Transform Infrared Spectroscopy (FTIR), Raman Spectroscopy, and X-ray diffraction (XRD) techniques were used to characterize the samples.     

MeV carbon ion irradiation-induced changes in the electrical conductivity of silver nanowire networks

MeV carbon ion irradiation-induced changes in the electrical conductivity of Silver nanowire (Ag-NW) networks is demonstrated systematically at different C⁺ ion fluences ranging from 1 × 10¹² to 1 × 10¹⁶ ions/cm² at room temperature. At low C⁺ ion fluences, the electrical conductivity of Ag-NWs decreases and subsequently increases with increase fluence. Finally, at high C⁺ ion fluences, conductivity again decreases. The variation in the electrical conductivity of Ag NW network is discussed after analysis using scanning electron microscopy (SEM) and X-ray diffraction (XRD) techniques. The observed increase in electrical conductivity is thought to be due to ion induced coalescence of Ag-NWs at contact position, which causes reduction of wire–wire contact resistance, while the decrease in electrical conductivity may be due to defect production by C⁺ ions into Ag-NWs. Ion beam technology is therefore a very promising technology that is capable of fabricating highly conductive Ag-NW networks for transparent electrodes. Moreover, a method for thinning, slicing and cutting of Ag-NWs using ion beam technology is also reported.     

Ferromagnetism in ZnO doped with Co by ion implantation

The importance of doping ZnO with magnetic ions is associated with the fact that this oxide is a good candidate for the formation of a magnetic-diluted semiconductor. Most of the studies reported in Co-doped ZnO were carried out in thin films, but the understanding of the modification of the magnetic behaviour due to doping demands the study of single-crystalline samples. In this work, ZnO single crystals were doped at room temperature with Co by ion implantation with fluences ranging between 2×10¹⁶ and 1×10¹⁷ ions cm⁻² and implantation energy of 100 keV. As implanted samples show a superparamagnetic behaviour attributed to the formation of Co clusters, room temperature ferromagnetism is attained after annealing at 800 °C, but no magnetoresistance was detected in the temperature range from 10 to 300 K.     

Effect of swift heavy ion irradiation on dilute Fe-doped Sb0.95Se0.05 magnetic semiconductor

A thin film of dilute Fe (0.008)-doped Sb_0.95Se_0.05 alloy was grown on silicon substrate using the thermal evaporation technique. This film was irradiated with swift heavy ions (SHIs) Ag⁺¹⁵ having 200?MeV energy at ion fluences of 1?×?10¹² and 5?×?10¹² ions per cm², respectively. The thickness of the thin film was ～500?nm. We study the effect of irradiation on structural, electrical, surface morphology and magnetic properties of this film using grazing angle XRD (GAXRD), DC resistivity, atomic force microscopy (AFM) and magnetic force microscopy (MFM), respectively. GAXRD suggests that no significant change is observed in this system due to SHI irradiation. The average crystallite size increases with fluence, whereas the AFM image shows the rms roughness decreases due to irradiation with respect to the un-irradiated thin film. The MFM image shows that the magnetic interaction in irradiated film decreases due to the irradiation effect. Although the un-irradiated sample shows metal to semiconducting transition, but after irradiation with fluence of 5?×?10¹² ions per cm², the sharpness of the metal to semiconducting phase transition is observed to increase dramatically at ～300?K. This characteristic of the thin film makes it a promising candidate for an electrical switching device after irradiation.     

Optical properties of ZnO and Al2O3 implanted with silver ions

ZnO and Al₂O₃ samples implanted with 30-keV silver ions with fluences in the interval (0.25–1.00) × 10¹⁷ ions/cm² are studied by the method of optical photometry in the visible part of the spectrum. The optical transmission spectra of the implanted samples exhibit a selective band associated with surface plasmon resonance absorption of silver nanoparticles. The intensity of this band nonmonotonically depends on the implantation fluence. The silver ion depth distribution in the samples is calculated. It is shown that the non-monotonicity observed in experiments is due to an increase in the substrate sputtering ratio with increasing implantation fluence. It is found that vacuum thermal annealing of the implanted Al₂O₃ layers up to 700°C causes a considerable narrowing of the plasmon absorption bandwidth without a tangible change in its intensity. At higher annealing temperatures, the plasmon absorption band broadens and its intensity drops. Annealing of the ZnO films under such conditions causes their complete vaporization.     

Impurity redistribution in Pb implanted and annealed silicon

Reordering of 〈111〉 silicon, implanted with Pb ions at energies >100 keV and fluences ～5 × 10¹⁵ cm^?2 is accompanied by substantial impurity indiffusion in addition to pronounced outdiffusion and accumulation at the near surface region.     

Radiation defects introduced by MeV electrons in argon implanted MOS structures

The influence of MeV electron irradiation on the interface states of argon implanted thin oxide MOS samples has been studied by the thermally stimulated current (TSC) method. The oxide thickness of the structures is 18 nm. Two groups of n-type MOS structures non-implanted and implanted with 20 keV Ar⁺ ions and a dose of 5×10¹² cm⁻² are examined. Both groups are simultaneously irradiated by 23 MeV electrons with doses of 1.2×10¹⁶, 2.4×10¹⁶ or 6.0×10¹⁶ el/cm². The energy position and density of the interface states (generated by electron irradiation, ion implantation or both treatments of the samples) are determined. It is shown that MeV electron irradiation decreases the concentration of interface states (like an oxygen-vacancy and di-vacancy) slightly and creates additional interface states (like an impurity-vacancy) at the Si–SiO₂ interface of argon implanted MOS structures.     

Ion implantation damage and crystalline-amorphous transition in Ge

Experimental studies on the damage produced in (100) Ge substrates by implantation of Ge⁺ ions at different energies (from 25 to 600 keV), fluences (from 2×10¹³ to 4×10¹⁴ cm⁻²) and temperature (room temperature, RT, or liquid-nitrogen temperature, LN₂T) have been performed by using the Rutherford backscattering spectrometry technique. We demonstrated that the higher damage rate of Ge with respect to Si is due to both the high stopping power of germanium atoms and the low mobility of point defects within the collision cascades. The amorphization of Ge has been modeled by employing the critical damage energy density model in a large range of implantation energies and fluences both at RT and LN₂T. The experimental results for implantation at LN₂T were fitted using a critical damage energy density of ∼1 eV/atom. A fictitious value of ∼5 eV/atom was obtained for the samples implanted at RT, essentially because at RT the damage annihilation plays a non-negligible role against the crystalline–amorphous transition phase. The critical damage energy density model was found to stand also for other ions implanted in crystalline Ge (Ar⁺ and Ga⁺).     

Effects of silicon negative ion implantation in semi-insulating gallium arsenide

ABSTRACT

In the present work, effects of silicon negative ion implantation into semi-insulating gallium arsenide (GaAs) samples with fluences varying between 1?×?10¹⁵ and 4?×?10¹⁷?ions?cm^?2 at 100?keV have been described. Atomic force microscopic images obtained from samples implanted with fluence up to 1?×?10¹⁷?ion?cm^?2 showed the formation of GaAs clusters on the surface of the sample. The shape, size and density of these clusters were found to depend on ion fluence. Whereas sample implanted at higher fluence of 4?×?10¹⁷?ions?cm^?2 showed bump of arbitrary shapes due to cumulative effect of multiple silicon ion impact with GaAs on the same place. GXRD study revealed formation of silicon crystallites in the gallium arsenide sample after implantation. The silicon crystallite size estimated from the full width at half maxima of silicon (111) XRD peak using Debye-Scherrer formula was found to vary between 1.72 and 1.87?nm with respect to ion fluence. Hall measurement revealed the formation of n-type layer in gallium arsenide samples. The current–voltage measurement of the sample implanted with different fluences exhibited the diode like behavior.     

Nickel metallisation of Si by dynamic ion-beam mixing

Abstract

Thin Ni films were prepared at room temperature by Ni metal vapour deposition and simultaneous irradiation by Ar ions with an energy of 2–20 keV. The reaction of Ni with Si during dynamic ion-beam mixing was studied. The fluences of the ion beam were 4.7 × 10¹⁷ and 8.9 × 10¹⁷ cm^?2, and arrival rate ratios Ni/Ar were 9.7 and 5.1. Concentration profiles of Ni, Si, C, and O were analysed with Auger electron spectroscopy; the surface morphology and the crystalline structure were investigated with a cross-sectional scanning electron microscope and X-ray diffractometry. The theoretical profiles were calculated with the dynamic Monte Carlo simulation T-DYN for comparison with the experimentally obtained profiles. It was possible to observe the ballistic mixing effects and also thermally activated formation of nickel silicide.     

50 MeV Li3+ ion irradiation effect on structural, electrical, and dielectric properties of PVA-based nanocomposite polymer electrolytes

Nanocomposite polymer electrolyte thin films of polyvinyl alcohol (PVA)-orthophosphoric acid (H₃PO₄)-Al₂O₃ have been prepared by solution cast technique. Films are irradiated with 50 MeV Li³⁺ ions having four different fluences viz. 5?×?10¹⁰, 1?×?10¹¹, 5?×?10¹¹, and 1?×?10¹² ions/cm². The effect of irradiation on polymeric samples has been studied and characterized. X-ray diffraction spectra reveal that percent degree of crystallinity of samples decrease with ion fluences. Glass transition and melting temperatures have been also decreased as observed in differential scanning calorimetry. A possible complexation/interaction has been shown by Fourier transform infrared spectroscopy. Temperature-dependent ionic conductivity shows an Arrhenius behavior before and after glass transition temperature. It is observed that ionic conductivity increases with ion fluences and after a critical fluence, it starts to decrease. Maximum ionic conductivity of ～2.3?×?10^?5 S/cm owing to minimum activation energy of ～0.012 eV has been observed for irradiated electrolyte sample at fluence of 5?×?10¹¹ ions/cm². The dielectric constant and dielectric loss also increase with ion fluences while they decrease with frequency. Transference number of ions shows that the samples are of purely ionic in nature before and after ion irradiation.     

Effect of Fe-ion implantation doping on structural and optical properties of CdS thin films

We report on effects of Fe implantation doping-induced changes in structural, optical, morphological, and vibrational properties of cadmium sulfide thin films. Films were implanted with 90 keV Fe⁺ ions at room temperature for a wide range of fluences from 0.1×10¹⁶ to 3.6×10¹⁶ ions cm⁻² (corresponding to 0.38–12.03 at.% of Fe). Glancing angle X-ray diffraction analysis revealed that the implanted Fe atoms tend to supersaturate by occupying the substitutional cationic sites rather than forming metallic clusters or secondary phase precipitates. In addition, Fe doping does not lead to any structural phase transformation although it induces structural disorder and lattice contraction. Optical absorption studies show a reduction in the optical band gap from 2.39 to 2.17 eV with increasing Fe concentration. This is attributed to disorder-induced band tailing in semiconductors and ion-beam-induced grain growth. The strain associated with a lattice contraction is deduced from micro-Raman scattering measurements and is found that size and shape fluctuations of grains, at higher fluences, give rise to inhomogeneity in strain.     

钴离子注入对二氧化钛晶体的结构和光学性能的影响

采用离子注入法制备了钴离子掺杂的金红石相TiO₂样品;离子注入能量、注量分别为40 keV(1×10¹⁶cm^-2),80 keV(5×10¹⁵,1×10¹⁶,5×10¹⁶,1×10¹⁷cm^-2),120 keV(1×10¹⁶cm^-2). 通过XRD,XPS和UV-Vis等手段对掺杂前后样品的结构和光学性能进行了表征,分析了掺杂元素在金红石TiO₂中的存在形式. XRD测试表明随着注入能量的增加晶体的损伤程度增加. UV-Vis测试表明掺杂后所有样品在可见光区的吸收增强; 并且随着注量的增加,注量为5×10¹⁵cm^-2到5×10¹⁶cm^-2范围内注入样品的光学带隙逐渐变小. 关键词： 钴 二氧化钛 离子注入 掺杂     

Room-temperature ferromagnetism in N+-implanted ZnO:Mn thin films

Mn–N co-doped ZnO films with wurtzite structure were fabricated by RF magnetron sputtering together with the ion-implantation technique. Then a post-annealing at 650 °C for 10 min in a N₂ atmosphere was performed to activate the implanted N⁺ ions and recover the crystal quality, and a p-type ZnO:Mn–N film with a hole concentration of about 2.1×10¹⁶ cm^?3 was obtained. It is found that the Mn mono-doped ZnO film only exhibits paramagnetic behavior, while after N⁺-implantation, it shows ferromagnetism at 300 K, and the magnetization of the ZnO:Mn–N films can be further enhanced by thermal annealing due to the activation of the N acceptors. Our experimental results confirm that the codoping N acceptors are favorable for ferromagnetic ordering of Mn²⁺ ions in ZnO, which is consistent with the recent theoretical calculations.