Structural analysis of xCsCl(1 − x)Ga2S3 glasses

Sulphide glasses doped with rare-earth ions have been demonstrated to be suitable for photonic applications such as optical amplifiers, up-converters and fiber lasers. The substitution of metal halides into the glass network has been shown to result glasses with desirable properties in terms of quantum efficiency and fiber manufacture [J.R. Hector, J. Wang, D. Brady, M. Kluth, D.W. Hewak, W.S. Brocklesby, D.N. Payne, Journal of Non-Crystalline Solids 239 (1998) 176]. To assist in the understanding of this improvement a structural analysis of glasses with a composition xCsCl(1 ? x)Ga₂S₃ has been undertaken in order to examine the nature of the gallium environment. Information collected by high energy X-ray diffraction and neutron diffraction have been analyzed to permit the identification of the structural units as Ga centered tetrahedra. The interconnection between the tetrahedra was found to be predominantly corner sharing.     

The preparation and structural studies in the (80 − x)TeO2–20ZnO–(x)Er2O3 glass system

Er³⁺-doped tellurite glasses of the (80 ? x)TeO₂–20ZnO–(x)Er₂O₃ system (0.5 mol% ? x ? 2.5 mol%) have successfully been made by melt-quenching technique and their structure has been investigated by means of DTA and Raman spectroscopy. The DTA results show the thermal parameters; such as the glass transition temperature (T_g) and crystallization temperature (T_c) were determined. It is found that this system provides a stable and wide glass formation range in which the glass stability around 99–140 °C may be obtained. The Raman spectroscopy used the structural studies in the glass system. Two Raman shift peaks were observed around 640–670 cm^?1 and 720–740 cm^?1, which correspond to the stretching vibration mode of TeO₄ tbp and TeO₃ tp, respectively. It is found that the spectral shift in Raman spectra is depending on the Er₂O₃ content. This evolution is an indication of the changes in the basic unit of the glass structure.     

Nanostructured Crystals of Fluorite Phases Sr1 – xRxF2 + x (R Are Rare-Earth Elements) and Their Ordering. 15. Concentration Dependence of the Defect Structure of As Grown Nonstoichiometric Phases Sr1 – xRxF2 + x (R = Sm,Gd)

Crystallography Reports - The defect structure of as grown single crystals Sr1 – xSmxF2 + x (x = 0.14, 0.26) and...     

Nanostructured Crystals of Fluorite Phases Sr1 – xRxF2 + x (R Are Rare-Earth Elements) and Their Ordering. 13: Crystal Structure of SrF2 and Concentration Dependence of the Defect Structure of Nonstoichiometric Phase Sr1 – xLaxF2 + x As Grown (x = 0.11, 0.20, 0.32, 0.37, 0.47)

Crystallography Reports - The defect structure of as-grown SrF2 and nonstoichiometric phases Sr1 – xLaxF2 + x (x = 0.11, 0.20, 0.32, 0.37, 0.47) single...     

Synthesis and structure–property relations in xCuO–(1 − x)Bi2O3 (0.5 ⩽ x ⩽ 0.9) (C1–C5: x = 0.5, 0.6, 0.7, 0.8, 0.9) glasses

Synthesis of the xCuO–(1 ? x)Bi₂O₃ (0.5 ? x ? 0.9) (C1–C5: x = 0.5, 0.6, 0.7, 0.8, 0.9) glasses was done via nitrate–citrate gel route. Glassy phase is ascertained by XRD studies. Magnetic susceptibility results in the range 4.2–400 K show weak paramagnetic nature with exchange integrals ～0.024–0.13 eV in the glasses. The electron paramagnetic resonance (EPR) in the range 4.2–363 K shows g ≈ 2.0 and the trend of the g-matrix elements g_|| > g_⊥ > g_e for the glasses C1–C5 at 4.2 K are due to the Cu²⁺ (3d⁹) paramagnetic site in the glasses which is in a tetragonally elongated octahedron [O_1/2–CuO_4/2–O_1/2] having D_4h symmetry. IR spectroscopic results show the presence of octahedron [BiO_6/2]^3? and [CuO_6/2]^4? units and pyramidal [BiO_2/2O]^? unit in the glasses.     

Structural behavior of CuxZr100−x metallic glass (x = 35−70)

The structural behavior of rapidly quenched amorphous Cu_xZr_100?x alloys was investigated in a wide composition range between 35 and 70 at.% Cu content. High-energy X-ray diffraction patterns, atomic pair correlation functions, mass density and the thermal stability behavior of the alloys all exhibit monotonic changes with composition. Partial pair correlation functions were determined assuming that they remain unchanged in the different amorphous Cu_xZr_100?x alloys and only the weight fractions become altered with changes in composition. The experimental results can be well described by a solid solution-like replacement of Cu and Zr atoms in the whole composition range. No indications are observed neither for the existence of a special atomic arrangement at a particular chemical composition nor for the presence of phase separation in the glassy state of the binary Cu–Zr system.     

Square-wave voltammetry and impedance spectroscopy in tin doped melts with the compositions xNa2O · 15Al2O3 · (85 − x)SiO2 (x = 8.5, 11 and 16)

Glasses with the base compositions xNa₂O · 15Al₂O₃ · (85 ? x)SiO₂ (x = 8.5, 11 and 16) doped with 0.5 mol% SnO₂ were investigated by both square-wave voltammetry and impedance spectroscopy in the temperature range from 1300 to 1600 °C. Each recorded square-wave voltammogram exhibits a well pronounced peak attributed to the Sn²⁺/Sn⁴⁺-redox pair. Impedance spectra were measured in a frequency range from 0.1 to 10⁵ s^?1 as a function of the superimposed dc-potential and were simulated using an equivalent circuit taking into account the resistivity of the melt, the electrochemical double layer, a resistor attributed to a kinetically hindered electron transfer and a Warburg parameter which accounts for the diffusion process of Sn⁴⁺ and Sn²⁺ to and from the electrode. Additionally, two impedance elements, a resistor and a capacitance both attributed to adsorption processes were necessary to fit the impedance spectra.     

Epitaxial lateral overgrowth of non-polar GaN(1 1̄ 0 0) on Si(1 1 2) patterned substrates by MOCVD

m-Plane GaN was grown selectively by metal–organic chemical vapor deposition (MOCVD) on patterned Si(1 1 2) substrates, where grooves aligned parallel to the Si〈1 1 0〉 direction were formed by anisotropic wet etching to expose the vertical Si{1 1 1} facets for growth initiation. The effect of growth conditions (substrate temperature, chamber pressure, and ammonia and trimethylgallium flow rates) on the growth habits of GaN was studied with the aim of achieving coalesced m-plane GaN films. The epitaxial relationship was found to be GaN(1 1? 0 0) || Si(1 1 2), GaN[0 0 0 1] || Si[1 1 –1], GaN[1? 1? 2 0] || Si[1 1? 0]. Among all growth parameters, the ammonia flow rate was revealed to be the critical factor determining the growth habits of GaN. The distribution of extended defects, such as stacking faults and dislocations, in the selectively grown GaN were studied by transmission electron microscopy in combination with spatially resolved cathodoluminescence and scanning electron microscopy. Basal-plane stacking faults were found in the nitrogen-wing regions of the laterally overgrown GaN, while gallium-wings were almost free of extended defects, except for the regions near the GaN/Si{1 1 1} vertical sidewall interface, where high dislocation density was observed.     

Amorphous Ni59Nb40PtxM1−x (M = Ru, Sn) electrocatalysts for oxygen reduction reaction

The oxygen reduction reaction, ORR, on amorphous Ni₅₉Nb₄₀Pt₁, Ni₅₉Nb₄₀Pt_0.6Ru_0.4 and Ni₅₉Nb₄₀Pt_0.6Sn_0.4 electrocatalysts was analyzed by electrochemical techniques such as cyclic voltammetry, CV; rotating disk, RDE, and ring-disk electrodes, RRDE, in a 0.5 M H₂SO₄ solution. The reduced amount of platinum and the incorporation of transition metals in the amorphous catalysts were found to have significant effect on the kinetic parameters of the cathodic reaction. The kinetics study (RRDE) performed on the amorphous catalysts showed a high activity towards the ORR, preferentially proceeding via multi-electron (4e^?) charge transfer pathway toward water formation, with less than 2.8% H₂O₂ in the region of PEMFC applications. The performance on Ni₅₉Nb₄₀Pt₁ was different, which may be related to changes in the electrode surface enrichment of one or two of the amorphous alloy constituents. The performance towards the cathodic reaction allows to envisage that incorporation of small amounts of Pt in the catalyst, may lead to the fabrication of good amorphous electrocatalytic materials with possible applications as cathode electrodes in polymer electrolyte fuel cells.     

Optical and electrical properties of as-prepared and annealed (Se80Te20)100 − xAgx (0 ≤ x ≤ 4) ultra-thin films

Optical and electrical properties of the (Se₈₀Te₂₀)_100 ? xAg_x (0 ≤ x ≤ 4) ultra-thin films have been studied. The ultra-thin films were prepared by thermal evaporation of the bulk samples. Thin films were annealed below glass transition temperature (328 K) and in between glass transition temperature and crystallization temperature (343 K). Thin films annealed at 343 K showed crystallization peaks for Se–Te–Ag phases in the XRD spectra. The transmission and reflection of as-prepared and annealed ultra-thin films were obtained in the 300–1100 nm spectral region. The optical band gap has been calculated from the transmission and reflection data. The refractive index has been calculated by the measured reflection data. It has been found that the optical band gap increases, but the refractive index, extinction coefficient, real and imaginary dielectric constant decrease with increase in Ag content. The optical band gap and refractive index show the variation in their values with increase in the annealing temperature. The extinction coefficient increases with increasing annealing temperature. The surface morphology of ultra-thin films has been determined using a scanning electron microscope (SEM). The measured dc conductivity, under a vacuum of 10^? 5 mbar, showed thermally activated conduction with single activation energy in the measured temperature range (288–358 K) and it followed Meyer–Neldel rule. The dc activation energy decreases with increase in Ag content in pristine and annealed films. The results have been analyzed on the bases of thermal annealing effects in the chalcogenide thin films.     

Crystal structure of α‴-(Zn1−x Cd x )3As2 (x = 0.26)

Single crystals of the α?-phase of (Zn_{1 ? x} Cd _x )₃As₂ solid solution (x = 0.26) have been prepared and investigated by X-ray diffraction analysis. The tetragonal unit-cell parameters are found to be a = b = 8.5377(2) Å, c = 24.0666(9) Å, sp. gr. I4₁/amd, Z = 16. Zn and Cd atoms in the crystal statistically occupy three symmetrically independent positions in the mirror planes and are tetrahedrally coordinated by arsenic atoms. (Zn,Cd) tetrahedra share edges to form a three-dimensional structure framework. The α?-phase is geometrically related to the fluorite structure. The character of arrangement of tetrahedral vacancies in fluorite-like unit cells is revealed. Chains of tetrahedral vacancies form microchannels oriented parallel the a and b axes, which pierce the three-dimensional structure framework at different levels along the c axis. The structure of α″-Cd₃As₂ crystals is found to be similar to that of α?-(Zn_0.74Cd_0.26)₃As₂.     

Comparative Analysis of the Methods for Obtaining Superconducting Fe1 + ySexTe1 – x Single Crystals

Crystallography Reports - The Fe1 + ySexTe1 – x single crystals grown by the KCl flux and Bridgman methods have been compared using the same investigation...     

Optical band gap and Raman spectra in some (Bi2O3)x(WO3)y(TeO2)100−x−y and (PbO)x(WO3)y(TeO2)100−x−y glasses

The glasses representing (Bi₂O₃)_x(WO₃)_y(TeO₂)_100?x?y and (PbO)_x(WO₃)_y(TeO₂)_100?x?y systems were prepared. The dilatometric glass-transition temperatures of examined glass samples were found in the region 383–434 °C, the coefficient of thermal expansion varied from 12 to 16 ppm/°C and the density ranged from 6.30₂ to 6.80₈ g/cm³. From the optical transmission measurements of thin glassy bulk samples prepared by a glass blowing, the optical gap values were found in the narrow region 3.21–3.36 eV. For the temperature interval 300–480 K, the values of the temperature coefficient of the optical band gap varied from 3.7 × 10^?4 to 5.24 × 10^?4 eV/K. It is suggested that Raman feature observed at around 350 cm^?1 can be assigned to an overlap of Raman bands attributed to WO₆ corner shared octahedra and to the following three atomic linkages: Bi–O–Te, Pb–O–Te and W–O–Te.     

Optimization of the Compositions of Solid Electrolytes Cd1 – xRxF2 + x (R = La–Lu,Y) with a Fluorite-Type Structure for Conductivity and Thermal Stability

Crystallography Reports - Optimization of the compositions of Cd1–xRxF2+x nonstoichiometric phases (CaF2 type, R is a rare-earth element) for the ionic conductivity and thermal stability is...     

Mössbauer and Magnetic Study of Lanthanum Manganite La1 – xCaxMn0.98Fe0.02O3 + δ (x = 0.05, 0.10, 0.20): Nonstoichiometric and Stoichiometric Composition

Crystallography Reports - Mössbauer and magnetic study of calcium-doped lanthanum manganites La1 – xCaxMn0.98Fe0.02O3 + δ (x = 0.05, 0.10, 0.20)...     

CaCu_3Ti_(4+x)O_(12+2x)陶瓷的电学性能

采用传统的固相合成方法在1100℃,保温3 h制备了不同Ti含量的CaCu3Ti4+xO12+2x陶瓷(x=-0.5,-0.2,0,0.2,0.5)。通过XRD分析了CCTO的相组成;在-20~100℃温度范围内、500 Hz~1 MHz的频率范围测量了CaCu3Ti4+xO12+2x陶瓷的介电特性和阻抗特性。Ti的化学计量变化明显的影响了CCTO陶瓷的电学性能,系统对比发现Ti的含量偏离CaCu3Ti4O12的化学计量比,会显著的降低CCTO陶瓷的介电常数,同时增加介电损耗。     

The glass transition temperature of mixed glass former 0.35Na2O + 0.65[xB2O3 + (1 − x)P2O5] glasses

The mixed glass former effect (MGFE) is defined as the non-linear and non-additive change in the ionic conductivity with changing glass former fraction at constant modifier composition between two binary glass former compositions. In this study, sodium borophosphate glasses, 0.35Na₂O + 0.65[xB₂O₃ + (1 ? x)P₂O₅] with 0 ≤ x ≤ 1, have been prepared and their glass transition temperatures (T_g) have been examined as an alternative indicator of the MGFE and as an indicator of changes in the short range order (SRO) structural network units that could cause or contribute to the MGFE. The changes in T_g show a positive non-additive and non-linear trend over the changing glass former fraction, x. The increase in T_g is related to the increasing number of bridging oxygens (BO) in the glass samples, which is caused by the increase in the number of tetrahedral boron, B⁴, units in the SRO structure.     

Structure and properties of the 70Li2S · (30 − x)P2S5 · xP2O5 oxysulfide glasses and glass–ceramics

The 70Li₂S · (30 ? x)P₂S₅ · xP₂O₅ (mol%) oxysulfide glasses were prepared by the melt quenching method. The glasses were prepared in the composition range 0 ≦ x ≦ 10. The glass–ceramics were prepared by heating the glasses over crystallization temperatures. The PO_nS_3?n (n = 1–3) oxysulfide units were produced in the glasses and glass–ceramics by partial substituting P₂O₅ for P₂S₅. In particular, the P₂OS₆^4? unit would be produced by substituting a small amount of P₂O₅ for P₂S₅. The oxygen atoms were incorporated into the Li₇P₃S₁₁ crystal structure because the diffraction peaks of the oxysulfide glass–ceramic shifted to the higher angle side. The glass–ceramic with 3 mol% of P₂O₅ exhibited the highest conductivity of 3.0 × 10^?3 S cm^?1 and the lowest activation energy for conduction of 16 kJ mol^?1. The P₂OS₆^4? dimer units in the oxygen-incorporated Li₇P₃S₁₁ crystal would improve conductive behavior of the Li₂S–P₂S₅ glass–ceramics.