基于多层二硒化钨的高性能场效应晶体管的实验优化和理论模拟

采用微机械剥离法制备了基于不同厚度的高质量WSe₂纳米片的场效应晶体管(WSe₂-FETs), 研究了其性能的影响因素. 通过调控WSe₂纳米片及介电层的厚度、 测试温度及退火处理等, 结合理论模拟分析, 获得了WSe₂-FETs的最佳电学性能. 最终, 基于7层WSe₂纳米片的场效应晶体管表现出最优异的电学性能, 室温下载流子迁移率可达93.17 cm²·V^?1·s^?1; 在78 K低温下, 载流子迁移率高达482.78 cm²·V^?1·s^?1.     

碲化锗场效应晶体管的制备及电学性能

采用微机械剥离法得到横向尺寸为10 μm的碲化锗(GeTe)纳米片. 通过电子束曝光和真空溅射镀膜的方法, 以钛金合金为接触电极, 制备基于二维碲化锗(2D-GeTe)纳米材料的场效应晶体管(FET), 并测定了其电学性能. 结果表明, 剥离所得GeTe纳米材料具有良好的结晶性, 光学带隙为1.98 eV, 属于p型半导体; 该场效应晶体管展现出了6.4 cm²·V^?1·s^?1的载流子迁移率和670的开关电流比的良好电学性能.     

Pd增强缺陷态TiO2纳米管阵列的光催化产氢性能

通过光还原沉积法, 利用氧空位诱导作用, 在Ni掺杂的缺陷态TiO₂纳米管阵列(TNT-Ni)上得到金属 Pd含量不同的Pd-TNT-Ni催化剂. 采用场发射扫描电子显微镜(SEM)、 X射线光电子能谱(XPS)、 紫外-可见 漫反射(UV-Vis DRS)、 表面光电压(SPV)、 光致发光光谱(PL)和电化学测试等表征手段, 探究了Pd与Ni掺杂的缺陷态TiO₂纳米管阵列之间的强相互作用对其光吸收特性和载流子分离及传输效率的影响, 阐明了强相互 作用对材料光催化活性的调控机理, 提出了Pd增强Pd-TNT-Ni光催化性能的作用机理. 结果表明, 通过光还 原法制备的Pd纳米颗粒尺寸为10~20 nm的Pd₁₂₀-TNT-Ni样品的光响应值为4.22 mA/cm², 是未负载Pd样品光 响应值(1.14 mA/cm²)的3.7倍, 其具有最佳的平均产氢速率(5.16 mmol·g^?1·h^?1), 是TNT样品平均产氢速率 (0.45 mmol·g^?1·h^?1)的12倍, 表明Pd与缺陷态TiO₂纳米管阵列之间的强相互作用驱动了载流子的分离及传输, 且Pd作为电子捕获势阱及反应活性位点, 显著提高了材料的光催化性能.     

聚(茚并芴-三苯胺)的合成及性能

设计并合成了一类新的可用于有机场效应晶体管(OFET)的聚合物半导体材料聚(茚并芴-三苯胺)(pIFTPA1~4), 通过核磁共振谱和凝胶渗透色谱等对聚合物进行了表征, 同时对其场效应薄膜晶体管性能进行了测试. 结果表明, 这些聚合物形成了无定形半导体膜, 在空气中稳定, 其载流子迁移率远高于聚三苯胺(pTPA)类材料, 其中pIFTPA1载流子迁移率高达4×10^-2 cm²/(V·s), 开关比为10⁶.     

石墨烯电子器件的研究进展

石墨烯是一种sp²杂化的平面类蜂窝型二维结构材料,特殊的结构赋予其许多优良的性能,如导电、导热性能好,载流子迁移率高和透射性好等,使其在电子器件领域表现出巨大潜力。 本文从石墨烯在三维集成电路中的应用、石墨烯场效应晶体管、石墨烯有机发光二极管及化学传感器四方面综述了石墨烯电子器件的研究进展及现状。     

基于过渡金属二硫族化物析氢催化的研究进展

解决全球气候变化和能源危机的有效途径之一是用氢能源(H₂)代替传统的化石能源. 析氢反应(Electrochemical hydrogen evolution reaction, HER) 被认为是绿色环保的可持续产氢途径, 通常电解过程需要催化剂以降低电化学电位, 提高能量利用效率. 目前最先进的催化剂仍然依赖于贵金属, 但是研究表明, 过渡金属二硫族化物(Transition metal dichalcogenides, TMDs)同样具有优异的催化活性, 与贵金属相比, TMDs产量大、 价格低、 催化活性好、 便于调控和修饰, 有望替代贵金属在催化领域的应用. 基于此, 本文讨论了近年来TMDs在析氢方面的研究情况以及TMDs材料的性能调控, 包含原子工程、 相工程和异质结. 并总结和展望了TMDs催化材料的挑战与机遇.     

MFI型分子筛膜的两段变温合成及对二甲苯异构体的分离性能

分别采用恒温和变温两种方法在氧化铝支撑体上原位制备了MFI型分子筛膜. 恒温法合成的MFI型分子筛膜晶体颗粒较大, 在高温脱除模板剂时会形成较大的缺陷, 没有对二甲苯/邻二甲苯(PX/OX)分离性能. 变温法合成的MFI型分子筛膜晶体在a, b方向尺寸较小, 在高温脱除模板时不会形成较大缺陷, 对PX/OX有良好的分离性能, 在300 ℃下, PX/OX分离因子高达42, PX的渗透性为9.57×10^-9 mol·m^-2·s^-1·Pa^-1. 采用低温臭氧脱除模板剂能够有效减小分子筛晶体热收缩产生的应力, 提高MFI型分子筛膜的分离性能. 两种方法合成的分子筛膜在低温臭氧的条件下脱除模板剂后, 都具有PX/OX分离性能, 其中变温法合成的分子筛膜PX/OX分离因子高达76, PX的渗透性为1.02×10^-8 mol·m^-2·s^-1·Pa^-1.     

非绝热分子动力学模拟A位阳离子对钙钛矿热载流子弛豫的影响

钙钛矿具有优异的光学和电学性质, 近年来成为太阳能电池领域的研究热点. 大量实验报道钙钛矿热载流子弛豫时间变化顺序为CsPbBr₃>MAPbBr₃(MA=CH₃NH₃)>FAPbBr₃[FA=HC(NH₂)₂], 但A位阳离子(Cs ⁺, MA ⁺, FA ⁺)对弛豫快慢的影响机制仍不明确. 采用基于含时密度泛函理论的非绝热动力学方法研究了上述3种钙钛矿热电子和热空穴的能量弛豫动力学, 计算得到的热载流子弛豫时间与实验结果吻合. 结果表明, A位阳离子通过静电和氢键作用影响其与无机Pb—Br骨架的电子-振动耦合, 使非绝热耦合强度遵从FAPbBr₃>MAPbBr₃>CsPbBr₃的变化趋势, 进而使热载流子弛豫时间尺度变化趋势与之相同, 表明合理选择A位阳离子可以优化钙钛矿太阳能电池的性能.     

FeNi层状双氢氧化物/TiO2复合光催化剂的制备及其制氢性能

层状双氢氧化物(LDH)的光生电子-空穴对易复合,虽然纳米薄片的结构促进了载流子分离,但其光催化效率仍然较低。我们利用LDH薄片结构的优势,将FeNi LDH和TiO₂通过静电自组装复合,设计制备出新型高效的FeNi LDH/TiO₂复合光催化材料,评价了其光催化分解水产氢性能。对其结构、光催化性能和光电化学等进行了详细表征。结果表明,FeNi LDH的高比表面积、复合物的异质结结构都有利于光生电荷的转移。光催化产氢结果表明,FeNi LDH/TiO₂复合材料的产氢速率(22.6mmol·g^-1·h^-1)分别比纯TiO₂(0.1 mmol·g^-1·h^-1)和FeNi LDH(0.05 mmol·g^-1·h^-1)提高了226和452倍,表明了异质结在提高LDH光催化效率方面的重要作用。     

硒化亚锗薄膜太阳能电池研究进展※

硒化亚锗(GeSe)禁带宽度合适(≈1.14 eV), 吸光系数大(>10⁵ cm^-1), 迁移率高(128.7 cm²•V^–1•s^–1), 价带顶中包含反键轨道赋予了其本征缺陷良性, 理论光电转换效率可达30%以上, 适合于制作高效薄膜太阳能电池; 同时GeSe具有毒性低、储量丰富、组分简单及稳定性强等优点, 还易于通过低成本的升华法进行薄膜制备, 从而在大规模应用方面具有巨大潜力. 以GeSe为研究对象, 介绍了GeSe基本性质, 总结了GeSe薄膜制备研究进展, 阐述了GeSe薄膜太阳能电池研究现状, 并展望了其今后发展方向与趋势.     

Strain of 2D materials via substrate engineering

Two-dimensional(2D) materials have received extensive attention in the fields of electronics, optoelectronics, and magnetic devices attributed to their unique electronic structures and physical properties. The application of strain is a simple and effective strategy to change the lattice structure of 2D materials thus modulating their physical properties, which further facilitate their applications in carrier mobility transistor, magnetic sensor, single-photon emitter etc. In this short review, ...     

二维过渡金属硫属化合物的大面积制备与应用研究进展

二维过渡金属硫属化合物(TMDs)因具有可调带隙、 谷电子学性质和高催化活性等优点, 在电子学、 光电子学和能源相关领域受到广泛关注. 为了实现以上应用, 实现大面积、 厚度均匀TMDs薄膜的批量制备至关重要. 化学气相沉积法(CVD)是制备大面积均匀、 高质量二维材料普遍使用的方法. 本文从前驱体的供给和衬底的设计两个角度, 总结了目前合成大面积TMDs薄膜的CVD方法, 并讨论了高质量TMDs的生长机制和参数优化方法; 介绍了高质量TMDs在电子学、 光电子学和电/光催化等方面的应用; 讨论了目前合成大面积均匀、 高质量TMDs所面临的挑战, 并对该领域的发展方向进行了展望.     

非生理活性蛋白质的研究进展及其在材料领域中的应用

介绍了自然界产量最丰富、研究最深入的几种非生理活性蛋白质,如胶原蛋白、丝素蛋白和大豆蛋白,包括它们的基本结构和最新研究进展以及在材料领域的应用情况.     

Progress on the optoelectronic functional organic crystals

Organic crystals constructed by pi-conjugated molecules have been paid great attention to in the field of organic optoelectronic materials. The superiorities of these organic crystal materials, such as high thermal stability, highly ordered structure, and high carrier mobility over the amorphous thin film ma-terials, make them attractive candidates for optoelectronic devices. Single crystal with definite struc-ture provides a model to investigate the basic interactions between the molecules (supramolecular interaction), and the relationship between molecular stacking modes and optoelectronic performance (luminescence and carrier mobility). Through modulating molecular arrangement in organic crystal, the luminescence efficiency of organic crystal has exceeded 80% and carrier mobility has been up to the level of 10 cm2·V?1·s?1. Amplified stimulated emission phenomena have been observed in many crys-tals. In this paper, we will emphatically introduce the progress in optoelectronic functional organic crystals and some correlative principle.     

Synthesis and Properties of Glass-Forming Hydrazones II [1]. Hydrazones Containing Bicarbazolyl Units

 A series of new glass-forming hydrazones containing bicarbazolyl units were synthesized starting from 9-(2-(9H-carbazol-9-yl)-cyclobutyl)-9H-carbazole and 9-(6-(9H-carbazol-9-yl)-hexyl)-9H-carbazole, and their thermal properties were studied. The correlation between their inclination to form glasses and their chemical structures are discussed. The results of a preliminary investigation of the photoelectric properties of amorphous films of the title compounds are briefly reported. The highest hole drift mobility was observed for 9-(2-(9H-carbazol-9-yl)-cyclobutyl)-9H-carbazole-3-carbaldehyde N,N-diphenylhydrazone; at high electric fields, it approaches 1 · 10⁻³ cm²/Vs.     

Comparable charge transport property based on S…S interactions with that of π-π stacking in a bis-fused tetrathiafulvalene compound

Compact molecular packing with short π-π stacking and large π-overlap in organic semiconductors is desirable for efficient charge transport and high carrier mobility.Thus charge transport anisotropy along different directions is commonly observed in organic semiconductors.Interestingly,in this article,we found that comparable charge transport property were achieved based on the single crystals of a bis-fused tetrathiafulvalene derivative(EM-TTP) compound along two interaction directions,that is,the multiple strong S…S intermolecular interactions and the π-π stacking direction,with the measured electrical conductivity and hole mobility of 0.4 S cm~(-1),0.94 cm~2 V~(-1) s~(-1) and 0.2 S cm~(-1),0.65 cm2 V~(-1) s~(-1),respectively.This finding provides us a new molecular design concept for developing novel organic semiconductors with isotropic charge transport property through the synergistic effect of multiple intermolecular interactions(such as S…S interactions) and π-π stacking.     

Synthesis and Properties of Glass-Forming Hydrazones II [1]. Hydrazones Containing Bicarbazolyl Units

Summary.  A series of new glass-forming hydrazones containing bicarbazolyl units were synthesized starting from 9-(2-(9H-carbazol-9-yl)-cyclobutyl)-9H-carbazole and 9-(6-(9H-carbazol-9-yl)-hexyl)-9H-carbazole, and their thermal properties were studied. The correlation between their inclination to form glasses and their chemical structures are discussed. The results of a preliminary investigation of the photoelectric properties of amorphous films of the title compounds are briefly reported. The highest hole drift mobility was observed for 9-(2-(9H-carbazol-9-yl)-cyclobutyl)-9H-carbazole-3-carbaldehyde N,N-diphenylhydrazone; at high electric fields, it approaches 1 · 10⁻³ cm²/Vs. Received September 17, 2001. Accepted (revised) October 16, 2001     

铁基普鲁士蓝正极的制备及电化学储钠性能

通过引入抗氧化剂(抗坏血酸)和配位剂(柠檬酸钠),采用共沉淀法在室温下制备出了高钠含量、低缺陷的铁基普鲁士蓝材料。由于高的钠含量和低的晶体缺陷,该材料在0.1C时容量可达110.0 mAh·g^-1。除了普鲁士蓝材料独特的开放框架结构,其多边界结构和低的缺陷,使该材料表现出优异的倍率性能和循环稳定性。在10C大电流下,容量仍有86.6 mAh·g^-1,1C电流下经过1300次循环,容量保持在90.1 mAh·g^-1,容量保持率达到86.9%。     

Defect engineering in semiconductor-based SERS

Semiconductor-based surface enhanced Raman spectroscopy (SERS) platforms take advantage of the multifaceted tunability of semiconductor materials to realize specialized sensing demands in a wide range of applications. However, until quite recently, semiconductor-based SERS materials have generally exhibited low activity compared to conventional noble metal substrates, with enhancement factors (EF) typically reaching 10³, confining the study of semiconductor-based SERS to purely academic settings. In recent years, defect engineering has been proposed to effectively improve the SERS activity of semiconductor materials. Defective semiconductors can now achieve noble-metal-comparable SERS enhancement and exceedingly low, nano-molar detection concentrations towards certain molecules. The reason for such success is that defect engineering effectively harnesses the complex enhancement mechanisms behind the SERS phenomenon by purposefully tailoring many physicochemical parameters of semiconductors. In this perspective, we introduce the main defect engineering approaches used in SERS-activation, and discuss in depth the electromagnetic and chemical enhancement mechanisms (EM and CM, respectively) that are influenced by these defect engineering methods. We also introduce the applications that have been reported for defective semiconductor-based SERS platforms. With this perspective we aim to meet the imperative demand for a summary on the recent developments of SERS material design based on defect engineering of semiconductors, and highlight the attractive research and application prospects for semiconductor-based SERS.

Defect engineering strategies are used to boost the SERS activity of a wide variety of semiconductors including metal oxides, nitrides, carbon materials and transition metal dichalcogenides (TMDs), as discussed in this perspective.     

First-Principles Study on Electronic and Optical Properties of Graphene-Like Boron Phosphide Sheets

Two-dimensional semiconducting materials with moderate band gap and high carrier mobil-ity have a wide range of applications for electronics and optoelectronics in nanoscale. On the basis of first-principles calculations, we perform a comprehensive study on the electronics and optical properties of graphene-like boron phosphide (BP) sheets. The global structure search and first-principles based molecular dynamic simulation indicate that two-dimensional BP sheet has a graphene-like global minimum structure with high stability. BP monolayer is semiconductor with a direct band gap of 1.37 eV, which reduces with the number of layers. Moreover, the band gaps of BP sheets are insensitive to the applied uniaxial strain.= The calculated mobility of electrons in BP monolayer is as high as 10⁶ cm²/(V·s). Lastly, the MoS₂/BP van der Waals heterobilayers are investigated for photovoltaic applications, and their power conversion efficiencies are estimated to be in the range of 17.7%－19.7%. This study implies the potential applications of graphene-like BP sheets for electronic and optoelectronic devices in nanoscale.