Optical and structural properties of hydrogenated silicon films prepared by rf-magnetron sputtering at low growth temperatures: Study as function of argon gas dilution

Two series of hydrogenated silicon thin films were deposited by the rf-magnetron sputtering (RFMS) at relatively low growth temperatures (T_s = 100 °C), in order to use the new generation of substrates sensitive to elevated temperatures. The effect of the argon gas diluted in hydrogen, on the optical and on the structural properties was carefully investigated by means of optical transmission (OT) measurements, Fourier transform infrared spectroscopy and spectroscopic ellipsometry (SE) technique. The results of this investigation suggest the existence of a threshold dilution around a gas mixture of argon (40%) and hydrogen (60%) for which the crystallization occurs, even at low deposition temperatures. The difference between the amorphous and the crystallized structures is well revealed by the OT and the IR absorption results, and strongly confirmed by the SE ones. The production of Si crystallites in the plasma as means of producing nanocrystalline by RFMS is suggested.     

Enhancement of organic thin-film solar cells by incorporating hybrid Au nanospheres and Au nanorods on a metallic grating surface

Abstract

In this study, we demonstrate the fabrication of hybrid plasmonic solar cells using gold nanoparticles (AuNPs). Two types of AuNPs, gold nanospheres (AuNSs) and gold nanorods (AuNRs), were incorporated in a hole transport layer (HTL) (PEDOT:PSS) on a metallic grating electrode. The organic solar cells (OSCs) structure comprised an indium-tin-oxide (ITO)-coated glass substrate/PEDOT:PSS:AuNSs:AuNRs/P3HT:PCBM/Al grating electrode. Adding AuNPs induced localized surface plasmon resonance (LSPR), while grating structured Al at the interface with a photoactive layer excited the propagating surface plasmons. Compared with a flat reference device, the proposed OSCs exhibited improved photovoltaic properties by increasing both the short-circuit current density (J_SC) and the power conversion efficiency (PCE) with large enhancements of 16.23% and 14.06%, respectively. The efficiency improvement was attributed to increased broadband absorption and improved electrical properties inside the thin-film devices.     

Simulation of temperature and gas density field distribution in diamond films growth on silicon wafer by hot filament CVD

In the present study, the temperature and gas density field inside the hot filament chemical vapor deposition (HFCVD) reactor, which play a determinate role on the growth rate and quality of as-deposited diamond films, are simulated using the finite volume method, and the influence of the size and arrangement of filaments and inlets are investigated. Firstly, the correctness of the simulation model is verified by comparing the temperature data obtained from the simulation with that measured in an actual depositing process, and the results show that the error between them is less than 3%. Thereafter, the deposition parameters are optimized using this model as N(filament number)=6, r(filament radius)=0.4 mm, D(filament separation)=16–18 mm, H(substrate–filament distance)=8–9 mm, and 25 inlets. Finally, diamond films are deposited on silicon (100) wafers using above parameters and the results of characterization by SEM and Raman spectrum exhibit that the deposited diamond films appear homogeneous surface with fine-faceted crystals.     

Influence of hydrogen on the thermomechanical properties of a-CNx:H and a-CNx films deposited by glow discharge and ion beam assisted deposition

The coefficient of thermal expansion (CTE), Young’s modulus, Poisson’s ratio, stress and hardness of a-CN_x and a-CN_x:H were investigated as a function of nitrogen concentration. Hydrogenated films were prepared by glow discharge, GD, and unhydrogenated films were prepared by ion beam assisted deposition, IBAD. Using nanohardness measurements and the thermally induced bending technique, it was possible to extract separately, Young’s modulus and Poisson’s ratio. A strong influence of hydrogen, in a-CN_x:H films, was observed on the CTE, which reaches about ∼9 × 10⁻⁶ C⁻¹, close to that of graphite (∼8 × 10⁻⁶ C⁻¹) for nitrogen concentration as low as 5 at.%. On the other hand, the CTE of unhydrogenated films increases with nitrogen concentration at a much lower rate, reaching 5.5 × 10⁻⁶ C⁻¹ for 33 at.% nitrogen.     

Effect of N2/CH4 flow ratio on microstructure and composition of hydrogenated carbon nitride films prepared by a dual DC-RF plasma system

Hydrogenated carbon nitride (a-CN:H) films were deposited on n-type (1 0 0) silicon substrates making use of direct current radio frequency plasma enhanced chemical vapor deposition (DC-RF-PECVD), using a gas mixture of CH₄ and N₂ as the source gas in range of N₂/CH₄ flow ratio from 1/3 to 3/1 (sccm). The deposition rate, composition and bonding structure of the a-CN:H films were characterized by means of X-ray photoelectron spectroscopy (XPS) and Fourier-transform infrared spectrometry (FTIR). The mechanical properties of the deposited films were evaluated using nano-indentation test. It was found that the parameter for the DC-RF-PECVD process had significant effects on the growth rate, structure and properties of the deposited films. The deposition rate of the films decreased clearly, while the N/C ratio in the films increased with increasing N₂/CH₄ flow ratio. CN radicals were remarkably formed in the deposited films at different N₂/CH₄ flow ratio, and their contents are related to the nitrogen concentrations in the deposited films. Moreover, the hardness and Young’s modulus of the a-CN:H films sharply increased at first with increasing N₂/CH₄ flow ratio, then dramatically decreased with further increase of the N₂/CH₄ flow ratio, and the a-CN:H film deposited at 1/1 had the maximum hardness and Young’s modulus. In addition, the structural transformation from sp³-like to sp²-like carbon-nitrogen network in the deposited films also was revealed.     

Solute segregation in a lid driven cavity: Effect of the flow on the boundary layer thickness and solute segregation

Our objective in the present work is to study the effect of convective flows, ranging from laminar to fully turbulent, on solute segregation in directional solidification configurations. To do so, numerical simulations performed in a model 2D lid driven cavity; the problem parameters, apart from the species molecular diffusion coefficient, are the lid and growth velocities. Purely diffusive to fully convective mass transport conditions are modelled in our parametric study. In parallel, a scaling analysis aiming at the determination of the solute boundary layer thickness is proposed. The results show that a single non-dimensional number, based on the interface stress, is able to capture the physics of the solute transport phenomena.     

The effects of argon gas flow rate and furnace pressure on oxygen concentration in Czochralski silicon single crystals grown in a transverse magnetic field

The effects of the argon gas flow rate and furnace pressure on the oxygen concentration in a transverse magnetic field applied Czochralski (TMCZ) silicon single crystals were examined through experimental crystal growth. A gas controller which had been proposed by Zulehner was used for this series of experiments. In the TMCZ gas-controlled crystals, a decrease in the oxygen concentration with a decrease in furnace pressure was found. A clear relationship between the oxygen concentration and the argon gas flow rate was not obtained due to the limited experimental conditions. The relationships between the oxygen concentration and the furnace pressure and the argon gas flow rate previously observed for Czochralski (CZ) crystals by a similar gas controller were confirmed by the present gas controller. The oxygen concentration changes in the TMCZ and the CZ crystals were analyzed in terms of the calculated flow velocity of the argon gas between the gas controller and the silicon melt surface. In contrast with the CZ gas-controlled crystals, the oxygen concentration was decreased with an increase in the flow velocity of argon gas in the TMCZ gas-controlled crystals. The surface temperature model and the melt flow pattern model which had been proposed in the previous report are discussed again in light of the present experimental results.     

An experimental and CFD study on gas flow field distribution in the growth process of multi‐walled carbon nanotube arrays by thermal chemical vapor deposition

Multi‐walled carbon nanotube arrays (MWCNTAs) were grown by thermal chemical vapor deposition (TCVD) in a horizontal furnace reactor. The scanning electron microscopy (SEM) results show that MWCNTAs grown on the bottom and the central of the quartz tube are different in one experiment. Moreover, the MWCNTAs grown on the central position are more aligned and longer than those on the bottom. A computational fluid dynamics (CFD) model was employed to investigate the gas flow field impact on the MWCNTAs growth. The results show that gas circulations appear after carrier gas and carbon source are injected into the quartz tube. Because of the existence of gas circulations, the gas flow field at the central of the quartz tube is more stable, which is conducive to the growth of MWCNTAs. The CFD simulation results match well with the experimental data.     

Field Effect in a Mixture of Cholesteryl Chloride and Cholesteryl Crotonate (75: 25% by weight)

The cholesteric-nematic phase transition in cholesteryl chloride and cholesteryl crotonate (75:25% by weight) is investigated. The dependence of the critical field on temperature is determined either by microscopical examination under polarized light or by following a DLI technique under electric field. Agreement between these methods has been obtained.