共查询到20条相似文献,搜索用时 0 毫秒
1.
Hidehiro Suzuki Noritaka Usami Akiko Nomura Toetsu Shishido Kazuo Nakajima Takashi Suemasu 《Journal of Crystal Growth》2010,312(22):3257-3260
We investigated the impact of an amorphous Ge (a-Ge) thin layer inserted at the amorphous Si (a-Si)/Al interface on Al-induced crystallization. In situ observation of the growth process clarified that the nucleation rate is drastically reduced by insertion of a-Ge, which led to increase in the average size of crystal grains. This was interpreted as resulting from decrease in the driving force of crystallization, mainly due to the larger solubility of Ge in Al than that of Si in Al. The obtained films were SiGe alloys with lateral distribution of Ge content, and its origin is discussed based on the two-step nucleation process. 相似文献
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Comparative analysis of the specific features of the formation of a dislocation structure in the single-layer epitaxial heterostructures Si1?xGex/Si and Ge1?ySiy/Ge is performed. It is ascertained that, at a relatively low lattice mismatch between an epitaxial layer and a substrate, the sign of misfit strain at the interface significantly affects the processes of defect formation. The most probable reasons for the observed phenomena are analyzed with allowance for the specific features of the state of the ensemble of intrinsic point defects in epitaxial layers subjected to elastic strains of a different sign. 相似文献
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X-ray photoelectron spectroscopy (XPS) has been used to examine the atomic content of implanted SiO2/Si layers. In particular, an XPS analysis permits to identify elemental Ge and Si, as well as GeO2 precipitations in SiO2 matrices. The XPS results reveal valuable information not only about the formation mechanism of Ge and Si nanoclusters but also on the annealing kinetics of SiO2 whose properties are known to be significantly altered during the process of ion implantation and subsequent annealing. The composition of ion beam-modified SiO2 layers strongly depends on the annealing temperature. With respect to germanium implanted samples a possibility of Ge nanocrystals formation appears at high (above 1000 °C) annealing temperatures. It has been shown that an intermediate step in the Ge oxide formation is necessary for the creation of Ge nanoclusters. Additionally, the presence of a subsurface zone GeOx (about 100 nm thick) predicted in kinetic three-dimensional lattice simulations has been confirmed. In the case of Si+ implanted samples substoichiometric silicon oxide lines in the XPS spectra of a SiO2 layer for all samples have been observed. No evidence of a line connected to the Si–Si bonding has been observed even at the highest annealing temperatures, at which only stoichiometric SiO2 has been detected. 相似文献
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Uniform epitaxial growth has been obtained by dissolution and transport of an evaporated Si film through an evaporated Al film at temperatures below 500°C. By analyzing the samples made in different ways we show that the presence of a cap on the metal layer, which inhibits the diffusion of the metal through the evaporated Si, plays a fundamental role. The cap consists of a thin oxide layer grown on top of the metal. The cap is made by leaving the sample in vacuum for two days or by heating the sample in vacuum before the Si deposition. The study of the initial growth rate on 〈100〉 and 〈111〉Si substrates reveals that the growth starts as islands which grow until they coalesce to form a continuous layer. Different growth rates have been obtained by using 〈100〉 and 〈111〉Si substrates. Typical growth rates are 50 Å/min at 330°C on 〈100〉 and 100 Å/min at 392°C on 〈111〉. The activation energy of the process is 1.2 eV. 相似文献
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V. I. Vdovin K. D. Shcherbachev M. Mironov C. P. Parry E. H. C. Parker 《Crystallography Reports》2000,45(4):661-669
A complex investigation into the structural perfection of the Si/SiGe superlattices grown by molecular-beam epitaxy at different temperatures of the Si substrate has been carried out by high-resolution X-ray diffraction analysis, secondary ion mass spectrometry (SIMS), and transmission electron microscopy (TEM). It is demonstrated that the combination of these methods makes it possible to describe in sufficient detail the distributions of the strains and Ge concentrations in the elastically strained superlattices and also to evaluate the sharpness of the layer interfaces. It is shown that the densitometry of electron microscope images of the superlattice cross-sections permits characterization of the relative sharpness of the layer interfaces and a qualitative representation of the Ge distribution throughout the thickness of the SiGe layers. 相似文献
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An Al/p‐AgGaTe2 polycrystalline thin film schottky barrier diode have been prepared by flash‐evaporation of p‐AgGaTe2 onto a pre‐deposited film of aluminium. The current‐voltage, capacitance‐voltage and photoresponse of the diode have been investigated. The important physical parameter such as barrier height of the fabricated diode was derived from these measurements. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim) 相似文献
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A. Gouyé O. Kermarrec A. Halimaoui Y. Campidelli D. Rouchon M. Burdin P. Holliger D. Bensahel 《Journal of Crystal Growth》2009,311(13):3522-3527
Si homo-epitaxial growth by low-temperature reduced pressure chemical vapor deposition (RPCVD) using trisilane (Si3H8) has been investigated. The CVD growth of Si films from trisilane and silane on Si substrates are compared at temperatures between 500 and 950 °C. It is demonstrated that trisilane efficiency increases versus silane's one as the surface temperature decreases. Si epilayers from trisilane, with low surface roughness, are achieved at 600 and 550 °C with a growth rate equal to 12.4 and 4.3 nm min−1, respectively. It is also shown that Si1−xGex layers can be deposited using trisilane chemistry. 相似文献
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R. Khler J.-U. Pfeifer H. Raidt W. Neumann P. Zaumseil U. Richter 《Crystal Research and Technology》1998,33(4):593-604
Relaxation of strained layer systems is still not well understood. It is time dependent and changes considerably for samples with different growth history. This has to be discussed in terms of nucleation, glide velocity and blocking of misfit dislocations. We have investigated these phenomena at samples with SiGe layer thicknesses ranging from 60 nm up to 120 nm grown by molecular beam epitaxy (MBE) or chemical vapor deposition (CVD) by means of X-ray topography. The samples were annealed at temperatures between 500° and 600° C. Nucleation of misfit dislocations is heterogeneous and the rate is obviously dependent on layer strain and thickness. A quantified nucleation rate was not yet accessible, mainly due to the preferential formation of dislocation bundles. The propagation velocities of misfit dislocation segments were measured during annealing by means of synchrotron radiation plane wave topography (reflection geometry). The values agree well with theory and there is no evidence that they depend on growth regime. It is shown that the interaction of propagating misfit dislocations with crossing ones may lead to blocking or cross slip in different glide systems. These results are corroborated by investigations with atomic force and transmission electron microscopy. 相似文献
10.
E. Schippel 《Crystal Research and Technology》1980,15(8):917-919
For producing Ni/Cr thin film resistors an Si addition would be especially suitable to reduce the TCR, as Si forms several phases with Ni and Cr. By evaporating powder mixtures deposition thin films were produced with constant Cr portions of 20 at.%, 30 at.% and 40 at.% and from 5 to 50 at.% Si or Mn, rest Ni. Whereas the layers containing Mn have an exclusively positive TCR, there is a shift to negative TCR in the layers containing much Si. 相似文献
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Beltiukov A. N. Volkov V. A. Chukavin A. I. Valeev R. G. Muslimov A. E. Kanevsky V. M. 《Crystallography Reports》2019,64(5):812-816
Crystallography Reports - The crystallization of thin germanium films during vacuum thermal deposition on an aluminum surface has been investigated. Significant changes in the morphology and... 相似文献
12.
缓冲层厚度对Ge/Si多层膜的影响 总被引:2,自引:2,他引:0
采用离子束溅射技术,通过改变Si缓冲层厚度,在p型Si衬底生长了一系列的Ge/Si多层膜样品.利用Raman光谱、X射线小角衍射以及原子力显微镜等分析测试技术,研究了多层薄膜的结晶、膜层结构、表面形貌等性质.结果表明:通过引入缓冲层,在一定程度上可以提高颗粒的结晶性;随着缓冲层逐渐沉积,来自界面态的影响有了明显的减弱,且多层膜结构的生长得到有效改善.红外吸收光谱实验表明多层膜的吸收特性与其周期结构密切相关,因此可以通过改变缓冲层厚度的方法,实现对多层薄膜红外吸收特性的调制. 相似文献
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F. Gao D. D. Huang J. P. Li Y. X. Lin M. Y. Kong J. M. Li Y. P. Zeng L. Y. Lin 《Journal of Crystal Growth》2000,220(4):457-460
Three n–p–n Si/SiGe/Si heterostructures with different layer thickness and doping concentration have been grown by a home-made gas source molecular-beam epitaxy (GSMBE) system using phosphine (PH3) and diborane (B2H6) as n-and p-type in situ doping sources, respectively. Heterojunction bipolar transistors (HBTs) have been fabricated using these structures and a current gain of 40 at 300 K and 62 at 77 K have been obtained. The influence of thickness and doping concentration of the deposited layers on the current gain of the HBTs is discussed. 相似文献
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《Journal of Non》2007,353(47-51):4400-4404
Results of dielectric studies of lutetium sesquioxide layers examined in Al/Lu2O3/Al thin film sandwiches are reported. The dielectric measurements were carried out in the frequency range 10−5–107 Hz and for temperatures from 292 K to 500 K. Results are presented as plots of frequency functions: the capacitance, the dielectric loss factor, tan δ(f) and also on the complex plane as Cole–Cole plots and Nyquist plots. The influence of the external voltage on C(U) and tan δ(U) was examined. Experimental data were analyzed taking into account thin insulating Lu2O3 film, near-electrode regions of Al/Lu2O3 and Lu2O3/Al interfaces and series resistance of electrodes and leads. The parameters of Lu2O3 film, near-electrode regions and resistance of contacts and leads were determined. 相似文献
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Zengfeng Di Miao Zhang Weili Liu Suhua Luo Zhenghua An Zhengxuan Zhang Chenglu Lin 《Journal of Non》2005,351(1):93-96
Zr0.6Al0.4O1.8 dielectric films were deposited directly on strained SiGe substrates at room temperature by ultra-high vacuum electron-beam evaporation (UHV-EBE) and then annealed in N2 under various temperatures. X-ray diffraction (XRD) reveals that the onset crystallization temperature of the Zr0.6Al0.4O1.8 film is about 900 °C, 400 °C higher than that of pure ZrO2. The amorphous Zr0.6Al0.4O1.8 film with a physical thickness of ∼12 nm and an amorphous interfacial layer (IL) with a physical thickness of ∼3 nm have been observed by high-resolution transmission electron microscopy (HRTEM). In addition, it is demonstrated there is no undesirable amorphous phase separation during annealing at temperatures below and equal to 800 °C in the Zr0.6Al0.4O1.8 film. The chemical composition of the Zr0.6Al0.4O1.8 film has been studied using secondary ion mass spectroscopy (SIMS). 相似文献
16.
Abha Misra 《Journal of Crystal Growth》2012,343(1):127-132
The diamond films were deposited onto a wurtzite gallium nitride (GaN) thin film substrate using hot-filament chemical vapor deposition (HFCVD). During the film deposition a lateral temperature gradient was imposed across the substrate by inclining the substrate. As grown films predominantly showed the hexagonal phase, when no inclination was applied to the substrate. Tilting the substrate with respect to the heating filament by 6° imposed a lateral temperature gradient across the substrate, which induced the formation of a cubic diamond phase. Diamond grains were predominantly oriented in the (100) direction. However, a further increase in the substrate tilt angle to 12°, resulted in grains oriented in the (111) direction. The growth rate and hence the morphology of diamond grains varied along the inclined substrate. The present study focuses on the measurements of dominant phase formation and crystal orientation with varying substrate inclination using orientation-imaging microscopy (OIM). This technique enables direct examination of individual diamond grains and their crystallographic orientation. 相似文献
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We have studied the in-situ boron doping of high Ge content Si1?xGex layers (x=0.3, 0.4 and 0.5). These layers have been grown at low pressure (20 Torr) and low temperature (600–650 °C) with a heavily chlorinated chemistry on blanket Si(0 0 1) substrates. Such a chemistry yields a full selectivity versus SiO2 (isolation) and Si3N4 (sidewall spacers) on patterned wafers with gate stacks. We have quantified the impact of the diborane flow on the SiGe layer crystalline quality, its resistivity, the SiGe:B growth rate and the apparent Ge concentration. Resistivity values lower than 1 mΩ cm are easily achieved, all the more so for high Ge content layers. The SiGe growth rate increases and the apparent Ge concentration (from X-ray diffraction) decreases as the diborane flow increases. B atoms (much smaller than Si or Ge) indeed partially compensate the compressive strain in the SiGe:B layers. We have also probed the in-situ boron and phosphorus doping of Si at 750 °C, 20 Torr with a heavily chlorinated chemistry. The B ions concentration increases linearly with the diborane flow, then saturates at a value close to 4×1019 cm?3. By contrast, the P ions concentration increases sub-linearly with the phosphine flow, with a maximum value close to 9×1018 cm?3. Adding diborane (phosphine) to the gaseous mixture leads to a sharp increase (decrease) of the Si:B (the Si:P) growth rates, which has to be taken into account in device layers. All the know-how acquired will be most handy for the formation of in-situ doped recessed or raised sources and drains in metal-oxide semiconductor devices. 相似文献
18.
ABSTRACTTiO2, ZnO and ZnO/TiO2 thin films have been prepared by radio frequency magnetron sputtering method under different temperatures. Their photo catalytic activities have been investigated. The structural of the thin films were characterized by X-ray diffraction and Raman spectroscopy. The photo catalytic activities of TiO2 and ZnO/TiO2 samples were evaluated by the photo decomposition of methylene blue. We note that the structural proprieties of the thin films showed a perfect crystallization along the (002) for ZnO, Rutile (110) for TiO2 and Anatase (101) for TiO2. The experimental results show that the bilayer ZnO/TiO2 were the most efficient photo catalysts compared to the layer of TiO2. This increased catalytic effect can attributed to the interface between the ZnO layer and the TiO2 one, which modify significantly the chemical potential of the bilayer. 相似文献
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Kazuo Nakajima Toru Ujihara Noritaka Usami Kozo Fujiwara Gen Sazaki Toetsu Shishido 《Journal of Crystal Growth》2004,260(3-4):372-383
The strain, surface and interface energies of the SiGe/Si (SiGe grown on Si) heterostructure system with and without misfit dislocations were calculated for the Frank–van der Merwe (FM), Stranski–Krastanov (SK) and Volmer–Weber (VW) growth modes essentially based on the three kinds of fundamental and simple structures. The free energies for each growth mode were derived from these energies, and it was determined as a function of the composition and layer thickness of SiGe on Si. By comparison of the free energies, the phase diagrams of the FM, SK and VW growth modes for the SiGe/Si system were determined. The (1 1 1) and (1 0 0) reconstructed surfaces were selected for this calculation. From the phase diagrams, it was found for the growth of SiGe on Si that the layer-by-layer growth such as the FM mode was easy to be obtained when the Ge composition is small, and the island growth on a wetting layer such as the SK mode was easy to be obtained when the Ge composition is large. The VW mode is energetically stable in the Ge-rich compositional range, but it is difficult for the VW mode to appear in the actual growth of SiGe on Si because the VW region is right above the SK region. The regions of the SK and VW modes for the (1 1 1) heterostructure are larger than those for the (1 0 0) one because the strain energy of the (1 1 1) face is larger than that of the (1 0 0) face. The regions of the SK and VW modes for the heterostructure with misfit dislocations are narrower than those for the one without misfit dislocations because the strain energy is much released by misfit dislocations. The phase diagrams roughly explain the behavior of the FM and SK growth modes of SiGe on Si. 相似文献